Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain

• Kalai Selvi Kanagarajan and
• Dhanalakshmi Krishnan Sadhasivan

Beilstein J. Nanotechnol. 2024, 15, 713–718, doi:10.3762/bjnano.15.59

• excellent improvement in TFETs, an on-current of 1.00 × 10−5 A/μm, an Ion/Ioff ratio of 7.14 × 1011, and a threshold voltage of 0.28 V. Keywords: dual low-work-function live strip (DLWLS); low-k dielectric spacer; low-work-function live strip (LWLS); Miller capacitance; molybdenum; subthreshold swing (SS

• thermionic emission as the carrier injection mechanism [3]. Band-to-band tunneling enables TFETs to have SS < 60 mV/dec [4][5][6][7]. The gate-to-drain capacitance (Cgd) effect (Miller capacitance effect) has an impact on TFET performance. Unwanted effects such as overshoot/undershoot in the inverter

• characteristics grow when Cgd rises [8]. The gate-to-drain capacitance increases as a result of a high-k material in the drain region [9]. Ambipolar leakage and Miller capacitance are two drawbacks of TFETs. The Miller capacitance can be reduced through oxide overlap and low-bandgap materials [10]. The solution