Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• -temperature ALD; PEALD; plasma-enhanced ALD; XPS; Introduction The atomic layer deposition (ALD) of cobalt films is an ongoing topic of interest [1]. Cobalt thin and ultrathin films play an important role in current generations of integrated circuits [2]. Compared to copper, the metal offers a greater

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

• Cathy Bugot,
• Nathanaëlle Schneider,
• Daniel Lincot and
• Frédérique Donsanti

Beilstein J. Nanotechnol. 2013, 4, 750–757, doi:10.3762/bjnano.4.85

• using the advantages of ALD. Typical ALD processes for the deposition of In2S3 and In2O3 are referenced in Table 1. As ALD processes of In2O3 report relatively small growth rates, we will consider the case of plasma enhancement. Indeed, plasma-enhanced ALD (PEALD), in which various reactive species are

• generated, has been the key for the development of fast thin-film deposition processes at low temperature. It is widely used to enhance the thin-film deposition of materials such as Al2O3, ZnO, Ta2O5, TiN, TaN and SiNx [19]. In this study, ALD and PEALD have been used to synthesize In2(S,O)3 thin films and

• to the high reactivity of radicals, PEALD generally allows the achievement of many chemical reactions that cannot occur with thermal ALD [13][19]. Here In2(S,O)3 films could be grown while using O2 plasma as oxygen source. But the growth of pure In2O3 films remained unsuccessful. This suggests that