N₂⁺-implantation-induced tailoring of structural, morphological, optical, and electrical characteristics of sputtered molybdenum thin films

• Usha Rani,
• Kafi Devi,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 495–509, doi:10.3762/bjnano.16.38

• University, Kurukshetra, ensuring comprehensive and accurate characterization of the properties of Mo thin films. Results and Discussion SRIM-TRIM simulation The “Stopping & Range of Ions in Matter and Transport of Ions in Matter” (SRIM-TRIM) simulation software was used to quantitatively estimate

Performance optimization of a microwave-coupled plasma-based ultralow-energy ECR ion source for silicon nanostructuring

• Joy Mukherjee,
• Safiul Alam Mollick,
• Tanmoy Basu and
• Tapobrata Som

Beilstein J. Nanotechnol. 2025, 16, 484–494, doi:10.3762/bjnano.16.37

• confirm the formation of nanostructures as observed from atomic force microscopy (AFM) images. The thickness of the amorphous thin layer is in good agreement with Monte Carlo simulations (SRIM) [31]. The article further investigates and explains the optical response (by UV–vis spectrometry) of the

A low-kiloelectronvolt focused ion beam strategy for processing low-thermal-conductance materials with nanoampere currents

• Annalena Wolff,
• Nico Klingner,
• William Thompson,
• Yinghong Zhou,
• Jinying Lin and
• Yin Xiao

Beilstein J. Nanotechnol. 2024, 15, 1197–1207, doi:10.3762/bjnano.15.97

• milling speed but reduced heat damage. Keywords: biological sample; COMSOL; focused ion beam; forward time–centered space (FTCS); heat damage; SRIM; Introduction FIB-SEMs combine a scanning electron microscope (SEM) and a focused ion beam (FIB) in a single instrument and are increasingly used to prepare

• investigated using the Monte Carlo simulation program SRIM [20], the program COMSOL (finite element analysis platform), and a numerical analysis using the forward time–centered space method to solve the 3D heat equation. This approach is discussed in detail elsewhere [17]. The results are experimentally tested

• for any type of instrument and ion species, which includes gallium FIBs, plasma FIBs, helium ion microscopy FIBs, as well as low-temperature ion source and magneto-optical trap ion source FIBs. Results and Discussion SRIM simulations SRIM simulations were carried out to evaluate the interactions of 5

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• ) facility of the Inter University Accelerator Centre, New Delhi. The electronic and nuclear energy losses of 100 keV Ar+ inside Si and Ge were calculated using the SRIM software [39]. The electronic energy loss values were found to be 37.67 and 36.51 eV/Å for Si and Ge, respectively, and the nuclear energy

• material, taking into account the ion straggling. For Si and Ge, a damage peak is exhibited around ≈75 nm , and the damaged layer extends up to a depth of ≈110 nm, which is consistent with the range of ions calculated with the SRIM code [39][43]. Here, the low-energy part of the spectrum continuously

Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

• are expelled out of the surface, that is, sputtered. More information about the theory of ion-induced sputtering can be found in [8]. Ion–surface interaction and sputtering yield data can be calculated using codes such as SRIM [35] and TRYDIN [36], while transport of the sputtered species through the

• gas phase and subsequent film growth can be computed using, for example, SIMTRA [37] and NASCAM [38] codes, respectively. The evolution of the sputtering yield calculated by SRIM for carbon (C), titanium (Ti), and Au targets as a function of the kinetic energy of the bombarding argon ions is presented

• ion impacts. The sputtering yield is influenced by the surface binding energy (Eb) of the target material, here Eb = 7.41, 4.89, and 3.8 eV for carbon, titanium, and gold, respectively. These values are provided by the SRIM code. Atoms leaving the target surface have an average kinetic energy of the

Is the Ne operation of the helium ion microscope suitable for electron backscatter diffraction sample preparation?

• Annalena Wolff

Beilstein J. Nanotechnol. 2021, 12, 965–983, doi:10.3762/bjnano.12.73

• produce artefacts that would compromise the TEM analysis. Monte Carlo simulations were performed using the program Stopping and Range of Ions in Matter (SRIM) to better understand the underpinning ion–solid interactions for the different settings [22]. The extent of created dislocations, vacancies as well

• (Figure 2) obtained using SRIM shows that the interaction volume depth of the 30 keV Ga ions in Cu is ≈25 nm and is in the same range as the EBSD signal information depth of 20 nm. Throughout the interaction depth, 786 vacancies are created per incident ion while ten atoms are sputtered. The total number

• SRIM simulation suggested that each copper atom is displaced around 22 times during the polishing process. A high enough Cu atom as well as Ga ion mobility is likely to move ions as well as displaced Cu atoms into grain boundaries. Grain boundaries can facilitate transport deeper into the material and

Scanning transmission helium ion microscopy on carbon nanomembranes

• Daniel Emmrich,
• Annalena Wolff,
• Nikolaus Meyerbröker,
• Jörg K. N. Lindner,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2021, 12, 222–231, doi:10.3762/bjnano.12.18

• energy-filtered transmission electron microscopy measurements. Keywords: carbon nanomembranes; dark field; helium ion microscopy (HIM); scanning transmission ion microscopy (STIM); SRIM simulations; Introduction Throughout the past decade, the helium ion microscope (HIM) has emerged as a versatile

• program Stopping and Range of Ions in Matter (SRIM) was used for Monte Carlo simulations [26]. When simulating thin membranes, it is important to use the monolayer collisions calculation type. Otherwise inaccurate results could be obtained as the collisions will be averaged over the mean free path. The

• simulation was run with 50,000 ions at energies of either 15 or 30 keV. The CNM was approximated as a carbon layer with a thickness between 0.3 and 13 nm. From the SRIM output file of all transmitted ions, an angular distribution was generated (see Figure 3a). The simulation results, obtained for different

Bio-imaging with the helium-ion microscope: A review

• Matthias Schmidt,
• James M. Byrne and
• Ilari J. Maasilta

Beilstein J. Nanotechnol. 2021, 12, 1–23, doi:10.3762/bjnano.12.1

• range of applications to thin sections, similar to the transmission option in SEMs. In combination with the well-established heavy-metal staining techniques used in transmission electron microscopy (TEM), this would allow for ultrastructural research comparable to standard TEM. SRIM [57] simulations

Scanning transmission imaging in the helium ion microscope using a microchannel plate with a delay line detector

• Eduardo Serralta,
• Nico Klingner,
• Olivier De Castro,
• Michael Mousley,
• Santhana Eswara,
• Serge Duarte Pinto,
• Tom Wirtz and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2020, 11, 1854–1864, doi:10.3762/bjnano.11.167

• thickness of some crystallites is comparable to the projected ion range of helium under the experimental conditions (estimated as 170 nm using SRIM [41]). There are, however, crystallites marked by arrows that show different intensity levels for different azimuthal directions. Crystallites 1 and 3 appear

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

• Nico Klingner,
• Gregor Hlawacek,
• Paul Mazarov,
• Wolfgang Pilz,
• Fabian Meyer and
• Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

• ) for helium (13 fold) but only from 6 nm (milling) to 4 nm (imaging) for lithium (1.5 fold). The simulated minimum milling width of a 30 keV point-like ion beam in Figure 4 has been obtained using SRIM [39]. The “monolayer collision steps/surface sputtering” mode has been used to simulate the size of

• thickness. Milling membranes removes their support from one side and dangling bonds can lead to morphological changes making milling tests difficult to interpret. In metal layers of a few nanometers thickness, sputter redeposition can take place, which is not taken into account in our static SRIM simulation

• ), experimentally achieved trench width, and simulated minimum milling width (FWHM) for FIBs working with different ion species and technologies depending on the ion mass. The line serves as a guide to the eye. SRIM simulation [39] of the sputter profile from a 30 keV point-like beam in a gold substrate as a

Out-of-plane surface patterning by subsurface processing of polymer substrates with focused ion beams

• Serguei Chiriaev,
• Luciana Tavares,
• Vadzim Adashkevich,
• Arkadiusz J. Goszczak and
• Horst-Günter Rubahn

Beilstein J. Nanotechnol. 2020, 11, 1693–1703, doi:10.3762/bjnano.11.151

• depicted by the energy loss profiles simulated with the “Stopping and Range of Ions in Matter (SRIM)” software, as shown in Figure S1 (Supporting Information File 1). In the case of He+ ion irradiation, a significant fraction of the total ion energy is lost in the silicon substrate below the PMMA layer

• materials. For instance, in the case of patterning with He+ ions (Figure 2), the maximum depth of a surface depression achieved in the high-fluence range is approx. 250 nm, while the projected lateral straggle of He+ ions is approx. 120 nm, as calculated with the SRIM code. The lateral straggle value gives

• Information SRIM simulations of collision and ionization in 5 nm Pt60Pd40/200 nm PMMA samples irradiated with He+, Ne+, and Ga+ FIBs. Supporting Information File 144: SRIM simulations. Funding Partfunding from Interreg Deutschland-Danmark within the European Regional Development Fund (ERDF) via the CELLTOM

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

• Stefania Castelletto,
• Abdul Salam Al Atem,
• Faraz Ahmed Inam,
• Hans Jürgen von Bardeleben,
• Sophie Hameau,
• Ahmed Fahad Almutairi,
• Gérard Guillot,
• Shin-ichiro Sato,
• Alberto Boretti and
• Jean Marie Bluet

Beilstein J. Nanotechnol. 2019, 10, 2383–2395, doi:10.3762/bjnano.10.229

• ) Optical microscopy and SEM images of various steps highlighted in the top row. (i) Proton irradiation SRIM simulation, with H+ stopping line (Rp); (ii) schematics of the vacancy locations in the material. (iii) SEM image of a single pillar. (a–c) Room-temperature PL spectra of the pillars and the gap area

Size limits of magnetic-domain engineering in continuous in-plane exchange-bias prototype films

• Alexander Gaul,
• Daniel Emmrich,
• Timo Ueltzhöffer,
• Henning Huckfeldt,
• Hatice Doğanay,
• Johanna Hackl,
• Muhammad Imtiaz Khan,
• Daniel M. Gottlob,
• Gregor Hartmann,
• André Beyer,
• Dennis Holzinger,
• Slavomír Nemšák,
• Claus M. Schneider,
• Armin Gölzhäuser,
• Günter Reiss and
• Arno Ehresmann

Beilstein J. Nanotechnol. 2018, 9, 2968–2979, doi:10.3762/bjnano.9.276

• and the ion straggling in the sample. The corresponding lateral range of this effect has been estimated by SRIM [42] simulations to be less than 30 nm at the ferromagnet (F)/antiferromagnet (AF) interface of the investigated layer system (see Appendix, Figure 5) and maximum 90 nm in the deep bulk of

• simulations was set for or a maximum step number of 2 × 105 iterations. Appendix SRIM simulations of the ion energy loss distribution: To determine the distribution of ions and the spatial distribution of the transferred energy in the sample, simulations using the SRIM software framework have been performed

• were approximated from the density values of pure metals using with x being the mole fraction, x = n/100. The SRIM compound correction was deactivated for all layers except SiO2. Simulations were performed using the monolayer collision mode for 2 × 106 helium ions with a kinetic energy of 15 keV

Disorder in H⁺-irradiated HOPG: effect of impinging energy and dose on Raman D-band splitting and surface topography

• Lisandro Venosta,
• Noelia Bajales,
• Sergio Suárez and
• Paula G. Bercoff

Beilstein J. Nanotechnol. 2018, 9, 2708–2717, doi:10.3762/bjnano.9.253

• 50 μC, assures a dose of 1016 H+ ions/cm2, while a dose of 1014 ions/cm2 is achieved with a charge of 1 μC. The irradiation energy was chosen according to the desired penetration depth of the ions in the sample, previously calculated via numeric simulations using the software SRIM [29]. Approximate

• impinging energy is approximately four times greater than in the case of lower energy. In fact, SRIM simulations allowed us to estimate penetration depths of 3.3 μm and 12.6 μm for low and high energies, respectively. Hence, a smaller mean free path of the ions results in the case of low energy, which

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• LTA in this energy range. In order to investigate the first point, we calculated by using SRIM the depth distribution of the implanted boron ions according to the process conditions used in this experiment. The simulation results indicate that only about 45% of the implanted boron dose is available

Numerical investigation of depth profiling capabilities of helium and neon ions in ion microscopy

• Patrick Philipp,
• Lukasz Rzeznik and
• Tom Wirtz

Beilstein J. Nanotechnol. 2016, 7, 1749–1760, doi:10.3762/bjnano.7.168

• polymer sample. SRIM, which is based on the same concept, is not suited for this study because the preferential sputtering and atomic mixing are not taken into account, leading to significant discrepancy between experimental and simulation results [13]. Yet, diffusion processes in general are also not

Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

• Christoph Schreyvogel,
• Vladimir Polyakov,
• Sina Burk,
• Helmut Fedder,
• Andrej Denisenko,
• Felipe Fávaro de Oliveira,
• Ralf Wunderlich,
• Jan Meijer,
• Verena Zuerbig,
• Jörg Wrachtrup and
• Christoph E. Nebel

Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165

• according to a SRIM (stopping and range of ions in matter) simulation [24]. The implanted dose of nitrogen was 108 ions/cm2 covering homogenously the surface. The sample was annealed for 2 h at 800 °C in vacuum to create NV centres. The formation efficiency is about 1–10% [25][26] which leads to an NV

Hydration of magnesia cubes: a helium ion microscopy study

• Ruth Schwaiger,
• Johannes Schneider,
• Gilles R. Bourret and
• Oliver Diwald

Beilstein J. Nanotechnol. 2016, 7, 302–309, doi:10.3762/bjnano.7.28

• than five images per area were recorded, ensuring that the accumulated ion dose was below 5·1015 cm−2. Because the defects mainly occur close to the stopping range of the ions, which is ca. 160 nm according to the SRIM software [32], it is commonly considered to be an acceptable dose, because the

Scanning reflection ion microscopy in a helium ion microscope

• Yuri V. Petrov and
• Oleg F. Vyvenko

Beilstein J. Nanotechnol. 2015, 6, 1125–1137, doi:10.3762/bjnano.6.114

• effect of all these factors separately. Angular dependence of the ion reflection coefficient The dependence of the reflection coefficient for singly charged He ions on the grazing angle as obtained by a Monte Carlo simulation with SRIM software [39] for different materials is depicted in Figure 8. Note

• that the SRIM Monte Carlo simulation assumes that the ions are reflected from an amorphous target and all of them are collected by a detector. As it can be seen in Figure 8, the ion reflection coefficient is a monotonically decreasing function that tends to the yield of backscattered ions when the

• coefficient can be written as: Figure 11 shows the dependence of the reflection and transmission coefficients on the distance from rectangular step edge along the top surface. All values were calculated with SRIM Monte Carlo simulation software for a silicon dioxide step on silicon and 35 keV He ions. The ion

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• 180 keV, and (iii) the last set of samples were co-implanted with both Se and Te atoms under the same conditions as previously mentioned. Figure 1 shows the predicted dopant and vacancy concentration profiles induced by implantation using the Stopping and Range of Ions in Matter (SRIM) software. This

• system is fully miscible, corresponding to an ideal solution [31]). Usually, a damage energy higher than 5 eV/atoms1 corresponding to a vacancy concentration of ≈1.7 × 1022 vac/cm3 leads to Ge amorphization [32]. Thus, the SRIM calculations predict the formation of an amorphous Ge layer from the surface

• images using the ImageJ software developed at the National Institute of Health. The errors in the measurements can be estimated with the original SEM image resolution. SRIM calculations of the implant distribution of Te (red) and Se (blue) atoms in Ge. The distributions of implanted ions are shown using

Synthesis of Pt nanoparticles and their burrowing into Si due to synergistic effects of ion beam energy losses

• Pravin Kumar,
• Udai Bhan Singh,
• Kedar Mal,
• Sunil Ojha,
• Indra Sulania,
• Dinakar Kanjilal,
• Dinesh Singh and
• Vidya Nand Singh

Beilstein J. Nanotechnol. 2014, 5, 1864–1872, doi:10.3762/bjnano.5.197

• . Results and Discussion Using stopping and range of ions in matter (SRIM) calculations [38], the energy losses (both electronic and nuclear) by neon ions in the Pt film as a function of ion energy is shown in Figure 1. Unlike swift, heavy ions (with an energy of approximately hundreds of MeV) that undergo

• energy (SRIM calculation for neon ions incident on Pt). AFM images: a) pristine film, b–e) films irradiated with 50 keV, 140 keV, 350 keV and 600 keV, respectively. Rutherford backscattering spectra of the pristine and the irradiated films (Pt–Si). SEM images: a) pristine sample, b) 350 keV ion

Microstructural and plasmonic modifications in Ag–TiO₂ and Au–TiO₂ nanocomposites through ion beam irradiation

• Venkata Sai Kiran Chakravadhanula,
• Yogendra Kumar Mishra,
• Venkata Girish Kotnur,
• Devesh Kumar Avasthi,
• Thomas Strunskus,
• Vladimir Zaporotchenko,
• Dietmar Fink,
• Lorenz Kienle and
• Franz Faupel

Beilstein J. Nanotechnol. 2014, 5, 1419–1431, doi:10.3762/bjnano.5.154

• %) were irradiated by 100 MeV Ag8+ ions at different fluences (1 × 1012, 3 × 1012, 1 × 1013 ions/cm2) by using the Pelletron accelerator facility at Inter University Accelerator Centre, New Delhi. The energy of the Ag ions was selected by “Stopping and range of ions in matter (SRIM) 2008” calculations [51

Synthesis of embedded Au nanostructures by ion irradiation: influence of ion induced viscous flow and sputtering

• Udai B. Singh,
• D. C. Agarwal,
• S. A. Khan,
• S. Mohapatra,
• H. Amekura,
• D. P. Datta,
• Ajay Kumar,
• R. K. Choudhury,
• T. K. Chan,
• Thomas Osipowicz and
• D. K. Avasthi

Beilstein J. Nanotechnol. 2014, 5, 105–110, doi:10.3762/bjnano.5.10

• (Rp ≈ 20 nm) of the incident ions in the metal film (t < Rp in the present study, from SRIM calculation [27]). The effect of sputtering and recoil implantation on the depth profile of Au in the sample can be simulated by using TRIDYN [27]. TRIDYN takes into account compositional changes of the target

Digging gold: keV He⁺ ion interaction with Au

• Vasilisa Veligura,
• Gregor Hlawacek,
• Robin P. Berkelaar,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2013, 4, 453–460, doi:10.3762/bjnano.4.53

• it is backscattered, and some diffuses into the bulk or out of the material. SRIM-2011 [40] has been used to assess the percentage of backscattered helium. A gold slab with a thickness of 200 nm and 105 ions have been used in the calculations. According to these simulations 16% of the incident helium

Diamond nanophotonics

• Katja Beha,
• Helmut Fedder,
• Marco Wolfer,
• Merle C. Becker,
• Petr Siyushev,
• Mohammad Jamali,
• Anton Batalov,
• Christopher Hinz,
• Jakob Hees,
• Lutz Kirste,
• Harald Obloh,
• Etienne Gheeraert,
• Boris Naydenov,
• Ingmar Jakobi,
• Florian Dolde,
• Sébastien Pezzagna,
• Daniel Twittchen,
• Matthew Markham,
• Daniel Dregely,
• Harald Giessen,
• Jan Meijer,
• Fedor Jelezko,
• Christoph E. Nebel,
• Rudolf Bratschitsch,
• Alfred Leitenstorfer and
• Jörg Wrachtrup

Beilstein J. Nanotechnol. 2012, 3, 895–908, doi:10.3762/bjnano.3.100

• ” (SRIM) package implements such simulations [5]. Figure 1b shows the simulated ion traces achieved with the high-aspect-ratio mica mask. The simulations confirm that the spatial accuracy of the implantation is limited by straggle to about 100 nm. Figure 2a shows a high-resolution optical microscope image

• bombardment with 1.6 GeV samarium ions. The channels appear as dark parallelograms. The inset shows the dimensions of an individual ion channel. (b) SRIM simulation of the ion implantation process through the mica mask. The thickness of the mica mask is chosen in the range 5–20 μm, such that the nitrogen ions