Green synthesis of carbon dot structures from Rheum Ribes and Schottky diode fabrication

• Muhammed Taha Durmus and
• Ebru Bozkurt

Beilstein J. Nanotechnol. 2024, 15, 1369–1375, doi:10.3762/bjnano.15.110

• were calculated as 566 nm and 5.25 eV, respectively. The ideality factor and the measured barrier height (Φb) of the CDs-based Schottky diode were calculated as 9.1 and 0.364 eV, respectively. The CDs were used as semiconductor material in a Schottky diode, and the diode exhibited rectification

• behavior. The results obtained from this study showed that CDs can be applied in the field of electronics, apart from sensor studies, which are common application areas. Keywords: carbon dot (CD) structures; green synthesis; Rheum Ribes plant; Schottky diode; Introduction One of the most current types of

• supernatant was removed by decantation and a stock solution was prepared to be used in the studies. The prepared stock solution was stored at 4 °C to prevent contamination [15]. Schottky diode fabrication An n-type silicon substrate was used for Schottky diode fabrication. In the first step, the silicon

High-temperature resistive gas sensors based on ZnO/SiC nanocomposites

• Vadim B. Platonov,
• Marina N. Rumyantseva,
• Alexander S. Frolov,
• Alexey D. Yapryntsev and
• Alexander M. Gaskov

Beilstein J. Nanotechnol. 2019, 10, 1537–1547, doi:10.3762/bjnano.10.151

• heterostructures were intensively studied as sensitive elements of field-effect or Schottky diode gas sensors. These materials have a high sensitivity to hydrogen and hydrocarbons in the temperature range of 200–600 °C [9][10][11][12][13][14]. The resistive-type sensors based on MO/SiC composite materials have not

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

• Tino Wagner,
• Fabian Menges,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2018, 9, 129–136, doi:10.3762/bjnano.9.15

• to the left contact a much larger voltage drop is produced. This indicates the formation of a Schottky diode at the right contact, in which current is suppressed for negative voltage bias. The nearly linear slope for negative bias indicates leakage through interface states. Fitting the contact I–V

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• behaviour and a good quality of ohmic palladium–graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT

• cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed. Keywords: barrier height; graphene; heavy metals; Schottky diode; sensing platform; SiC; Introduction As a result of reckless and uncontrollable human activity many dangerous

• characteristics of the devices and their sensitivity. A simpler solution is to use Schottky diode sensors, which can be grown more easily, have no gate insulator and a high sensitivity in the reverse and forward diode regimes. During the last decade the thermal decomposition of silicon carbide (SiC) in argon

Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

• Christoph Schreyvogel,
• Vladimir Polyakov,
• Sina Burk,
• Helmut Fedder,
• Andrej Denisenko,
• Felipe Fávaro de Oliveira,
• Ralf Wunderlich,
• Jan Meijer,
• Verena Zuerbig,
• Jörg Wrachtrup and
• Christoph E. Nebel

Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165

• state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen

• for quantum communication and cryptography. Keywords: active charge state control; diamond; fast charge state switching; NV centre; two-dimensional Schottky diode; Introduction The nitrogen-vacancy centre (NV centre) in diamond is known to exist in at least three different charge states (NV−, NV0

• active) charge states NV− and NV0. In this work, we demonstrate for the first time an active control and a fast switching of the charge state of single NV centres between all three charge states (NV−, NV0 and NV+) by using a two-dimensional diamond Schottky-diode structure on a hydrogen-terminated (H