Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• . Rakhshani et al. [16] reported the impact of substrate temperature (35 and 305 °C), thermal annealing, and nitrogen doping on optoelectronic properties of ZnTe films and established an optimal doping concentration of nitrogen for lowering the resistivity of the grown films. Further, there are reports [17

Enhancing mechanical properties of chitosan/PVA electrospun nanofibers: a comprehensive review

• Nur Areisman Mohd Salleh,
• Amalina Muhammad Afifi,
• Fathiah Mohamed Zuki and
• Hanna Sofia SalehHudin

Beilstein J. Nanotechnol. 2025, 16, 286–307, doi:10.3762/bjnano.16.22

• methods are still predominantly used, even though combining two methods is more efficient. For instance, the combination of electrospinning with stretching and annealing treatments has been shown to produce ultrafine nanofibers [25]. Another issue with electrospun scaffolds is balancing their function of

Synthesis and the impact of hydroxyapatite nanoparticles on the viability and activity of rhizobacteria

• Bedah Rupaedah,
• Indrika Novella,
• Atiek Rostika Noviyanti,
• Diana Rakhmawaty Eddy,
• Anna Safarrida,
• Abdul Hapid,
• Zhafira Amila Haqqa,
• Suryana Suryana,
• Irwan Kurnia and
• Fathiyah Inayatirrahmi

Beilstein J. Nanotechnol. 2025, 16, 216–228, doi:10.3762/bjnano.16.17

• cycles consisting of denaturation at 94 °C for 45 s, annealing at 52 °C for 1 min, and elongation at 72 °C for 1 min. After the final cycle, polymerization continued at 72 °C for 5 min. The PCR products were then analyzed by electrophoresis on a 1% agarose gel. Visualization was performed under UV light

A review of metal-organic frameworks and polymers in mixed matrix membranes for CO₂ capture

• Charlotte Skjold Qvist Christensen,
• Nicholas Hansen,
• Mahboubeh Motadayen,
• Nina Lock,
• Martin Lahn Henriksen and
• Jonathan Quinson

Beilstein J. Nanotechnol. 2025, 16, 155–186, doi:10.3762/bjnano.16.14

• functionalization, Figure 7c,d, reducing filler sizes, in situ MOF growth, or applying annealing treatments. Interfacial adhesion can also be improved using ionic liquids (Figure 7e). MOF functionalization is commonly employed in MMM research. For example, in the study by Katayama et al. [113] mentioned earlier

• between polymer and fillers has also been enhanced through annealing treatments. Although annealing of MOFs can cause partial decomposition of the structural framework by imposing local defects, such treatments have been shown to increase CO2 uptake capacity in MOFs [129] and improve CO2 capture

• performance of MOF-based MMM [130]. In a study by Lai et al. [130], ZIF-8 was annealed at 300 °C for 1 h before being mixed with a poly(styrene-co-butadiene) solution during MMM fabrication. For filler loadings of 10 to 30 wt %, annealing led to an increase in CO2 permeability and CO2/N2 selectivity due to

Orientation-dependent photonic bandgaps in gold-dust weevil scales and their titania bioreplicates

• Norma Salvadores Farran,
• Limin Wang,
• Primoz Pirih and
• Bodo D. Wilts

Beilstein J. Nanotechnol. 2025, 16, 1–10, doi:10.3762/bjnano.16.1

• the effective refractive index of titania thin films produced by sol–gel synthesis varies because of porosity, depending on the specific process, chemicals, and reaction conditions [41]. A higher annealing temperature seems to have a large influence on reducing the porosity of thin films, while

Effect of radiation-induced vacancy saturation on the first-order phase transformation in nanoparticles: insights from a model

• Aram Shirinyan and
• Yuriy Bilogorodskyy

Beilstein J. Nanotechnol. 2024, 15, 1453–1472, doi:10.3762/bjnano.15.117

• , changes in the structural properties of Ni nanostructures due to ion bombardment have been reported in [15]. Interestingly, certain types of radiation ions have shown a positive effect on the crystal structure, leading to an increase in the degree of crystallinity after the austenitic annealing of defects

Lithium niobate on insulator: an emerging nanophotonic crystal for optimized light control

• Midhun Murali,
• Amit Banerjee and
• Tanmoy Basu

Beilstein J. Nanotechnol. 2024, 15, 1415–1426, doi:10.3762/bjnano.15.114

• implantation, the wafer is bonded to a SiO2 (or TiO2) substrate using direct bonding techniques, which involves bringing the surfaces into close contact and applying pressure or heat to form a strong bond. The wafer is then subjected to thermal annealing, which activates the splitting process along the

Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

• The-Long Phan,
• Le Viet Cuong,
• Vu Dinh Lam and
• Ngoc Toan Dang

Beilstein J. Nanotechnol. 2024, 15, 1390–1399, doi:10.3762/bjnano.15.112

• annealing Zn powder under atmospheric pressure conditions, we collected nanocrystals with various morphologies, including rods, pencils, sheets, combs, tetrapods, and multilegs. Raman scattering study reveals that the samples are monophasic with a hexagonal structure, and fall into the P63mc space group

The role of a tantalum interlayer in enhancing the properties of Fe₃O₄ thin films

• Hai Dang Ngo,
• Vo Doan Thanh Truong,
• Van Qui Le,
• Hoai Phuong Pham and
• Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

• process [14][15]. The impact of substrate temperature, annealing temperature, gas flow rate, and thickness on enhancing the characteristics of Fe3O4 thin films has been examined [15][16][17][18]. The substrates play a crucial role in directing the growth and enhancing the quality of the crystal, resulting

Local work function on graphene nanoribbons

• Daniel Rothhardt,
• Amina Kimouche,
• Tillmann Klamroth and
• Regina Hoffmann-Vogel

Beilstein J. Nanotechnol. 2024, 15, 1125–1131, doi:10.3762/bjnano.15.91

• -dependent measurements. Experimental The experiments were conducted in an Omicron VT-SFM system (base pressure 2 × 10−10 mbar). The Au(111) single crystal substrate (Mateck GmbH) was cleaned by repeated Ar ion sputtering–annealing cycles. The cleanliness of the samples was checked by SFM measurements. Then

• , 10,10′-dibromo-9,9′-bianthryl (DBBA) molecules were deposited by thermal evaporation (Kentax evaporator) onto the hot (Tsample = 470 K) sample surface for 10 min. The deposition rate was kept constant using a quartz crystal microbalance. Annealing up to 670 K for 10 min after deposition induced

• (f0 = 292 kHz, cL = 41 N/m) were used for imaging in the frequency modulation (FM) mode operated by a Nanonis electronic system. The tips were cleaned by sputtering (Ar pressure 5 × 10−3 Pa, energy 1 keV, 15 min) and annealing up to 375 K for 1–5 h (pressure below 1 × 10−7 Pa) prior to measurement

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• and Technology, Wybrzeze Wyspiańskiego 27, 50–370 Wroclaw, Poland 10.3762/bjnano.15.62 Abstract This paper presents an investigation into the influence of repeating cycles of hydrothermal growth processes and rapid thermal annealing (HT+RTA) on the properties of CuO thin films. An innovative

• devices. Keywords: CuO; hydrothermal method; rapid thermal annealing; thin films; Introduction Copper(II) oxide is a p-type semiconductor possessing a narrow bandgap, along with many beneficial electrical, optical, and magnetic properties. Particularly at the nanoscale, these properties set themselves

• focuses on hydrothermally grown CuO films. There are only a few reports in the literature indicating the use of this method for the growth of CuO films. An example of a multistep method of producing CuO films has been described in [43]. It combines the hydrothermal process, annealing, and spin coating

Directed growth of quinacridone chains on the vicinal Ag(35 1 1) surface

• Niklas Humberg,
• Lukas Grönwoldt and
• Moritz Sokolowski

Beilstein J. Nanotechnol. 2024, 15, 556–568, doi:10.3762/bjnano.15.48

• from Pfeiffer Vacuum. The vicinal Ag(35 1 1) crystal was obtained from MaTecK and cleaned by repeated cycles of sputtering and subsequent annealing at 700 K for 45 min. We tested whether a variation of the annealing temperatures between 500 and 800 K has an influence on the step distribution of the

• are more stable than the single chains with the same orientations B and D of the α-phase because of their commensurate nature. Hence, they do not completely transform into the domains of orientations A and C. One might also ask whether annealing the sample at 500 K for a longer time, or several

• consecutive annealing steps at 500 K, might further change the ratio in favor of orientations A and C. This was not the case. We observed the same intensity ratio between the stronger and weaker spots in the LEED pattern after every preparation and several consecutive annealing cycles. This can be explained

Electron-induced deposition using Fe(CO)₄MA and Fe(CO)₅ – effect of MA ligand and process conditions

• Hannah Boeckers,
• Atul Chaudhary,
• Petra Martinović,
• Amy V. Walker,
• Lisa McElwee-White and
• Petra Swiderek

Beilstein J. Nanotechnol. 2024, 15, 500–516, doi:10.3762/bjnano.15.45

• with more than 90 atom % Fe were obtained [19], presumably related to electron beam heating effects. However, attempts to purify deposits with initial Fe contents of only 40 atom % by annealing up to 700 °C led to phase segregation into a highly pure and crystalline Fe phase and a carbonaceous material

• irradiation. In cryo-EBID experiments, the precursor was condensed on the Ta substrate held at 100 K, after which electron irradiation was performed. After each deposition step, the remaining volatile species were removed by a TDS run followed by annealing. AES was again measured after sputter cleaning the Ta

• . Considering, however, the low volatility of the MA ligand at 100 K and the absence of signals of MA in ESD (see section Electron-stimulated desorption from condensed Fe(CO)4MA), it is likely that the ligand either desorbs during thermal annealing after electron irradiation or is decomposed to smaller and more

Unveiling the nature of atomic defects in graphene on a metal surface

• Karl Rothe,
• Nicolas Néel and
• Jörg Kröger

Beilstein J. Nanotechnol. 2024, 15, 416–425, doi:10.3762/bjnano.15.37

• of defects. Experimental A combined STM-AFM was operated in ultrahigh vacuum (5 × 10−9 Pa) and at low temperature (5 K). Surfaces of Ir(111) were cleaned by Ar+ ion bombardement and annealing. The epitaxial growth of graphene proceeded by exposing the heated (1300 K) Ir(111) surface to the gaseous

• molecular precursor C2H4 (purity: 99.9%) at a partial pressure of 10−5 Pa for 120 s [25][26]. Atomic-scale defects were created by bombarding graphene-covered Ir(111) with low-energy (140 eV) Ar+ ions (purity of the Ar gas: 99.999%) [27][28][29][30] at room temperature for 5 s followed by annealing (900 K

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• sputtering for optoelectronic applications. A glancing angle of 87° is employed to grow films of different thicknesses, which are then exposed to post-growth annealing. Detailed local probe analyses in terms of morphology and work function of WOx films are carried out to investigate thickness-dependent

• fabricating WOx-based optoelectronic devices, including photovoltaic cells. Keywords: annealing; glancing angle sputter deposition; heterojunction; tungsten oxide; work function; Introduction Tungsten oxide (WOx; x ≤ 3) is a popular transition-metal oxide for various optoelectronic devices because of its

• structural, optical, and electrical properties of glancing angle-deposited NS-WOx thin films, where NS-WOx films of different thicknesses (6–60 nm) are prepared by rf sputtering and exposed to post-growth annealing at 673 K in vacuum (2 × 10−7 mbar). The role of increased oxygen vacancy concentration (OV) on

In situ optical sub-wavelength thickness control of porous anodic aluminum oxide

• Aleksandrs Dutovs,
• Raimonds Popļausks,
• Oskars Putāns,
• Vladislavs Perkanuks,
• Aušrinė Jurkevičiūtė,
• Tomas Tamulevičius,
• Uldis Malinovskis,
• Iryna Olyshevets,
• Donats Erts and
• Juris Prikulis

Beilstein J. Nanotechnol. 2024, 15, 126–133, doi:10.3762/bjnano.15.12

• materials in phase 2. A simulated annealing fitting algorithm was employed. The PAAO structure (Figure 1a) was confirmed using field-emission scanning electron microscopy (FE-SEM-4800, Hitachi, Tokyo, Japan). The relationship between thickness measurements using SEM and optical interferometry has been

A bifunctional superconducting cell as flux qubit and neuron

• Dmitrii S. Pashin,
• Pavel V. Pikunov,
• Marina V. Bastrakova,
• Andrey E. Schegolev,
• Nikolay V. Klenov and
• Igor I. Soloviev

Beilstein J. Nanotechnol. 2023, 14, 1116–1126, doi:10.3762/bjnano.14.92

• on the principle of quantum annealing and contains a superconducting chip with 128,472 Josephson junctions, 75 percent of which were dedicated to superconducting digital electronics for controlling the processor and reading out the result. The rest was used either for qubit junctions or for

Density functional theory study of Au-fcc/Ge and Au-hcp/Ge interfaces

• Olga Sikora,
• Małgorzata Sternik,
• Benedykt R. Jany,
• Franciszek Krok,
• Przemysław Piekarz and
• Andrzej M. Oleś

Beilstein J. Nanotechnol. 2023, 14, 1093–1105, doi:10.3762/bjnano.14.90

• , stable hcp nanoislands were obtained under controlled annealing conditions on the germanium substrate [23]. After initial crystallization of the fcc gold phase, the hcp phase grows from the eutectic Au/Ge liquid. The atomically resolved STEM-HAADF measurements as well as electron backscatter diffraction

• hcp phase of Au, formed during specific processes of annealing and cooling of gold and germanium, is characterized by the P63/mmc space group with lattice constants aAu−hcp = 2.90 Å and cAu−hcp = 4.88 Å [23]. These structural parameters are well reproduced in our DFT calculations. The obtained cubic

A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

• Doan Nhat Giang,
• Nhat Minh Nguyen,
• Duc Anh Ngo,
• Thanh Trang Tran,
• Le Thai Duy,
• Cong Khanh Tran,
• Thi Thanh Van Tran,
• Phan Phuong Ha La and
• Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

• ., temperature, concentrations of chemicals, and annealing time). ZnO nanorods and nanowires have attracted great interest in photodetectors because their chemical and physical properties are exceptional for electronics applications, and their fabrication strategies are more facile than those of other structures

• temperature. Then, 1 mL HNO3 solution was added dropwise into this mixture under vigorous magnetic stirring. After annealing at 180 °C for 18 h, the black precipitate was washed several times and centrifuged (Supporting Information File 1, Figure S2). The formation of nanoparticles was observed through the

Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• nanoparticles with a defective zinc blende structure under mild conditions through thermal annealing of hydrogenated silicon nanoparticles with red phosphorus. The synthesized Si3P4 nanoparticles were analyzed using FTIR, XRD, electron diffraction, EDX, TEM, Raman spectroscopy, X-ray fluorescence spectrometry

• precursor for diffusion doping of wafers and as anode material for Li-ion batteries. A similar method with a hydrogenation step offers the possibility to obtain other compounds, such as silicon selenides, arsenides, and sulfides. Keywords: ampoule annealing; defective zinc blende structure; DFT

• inclusions in Si wafers implanted with P+ ions and laser-annealed at temperatures of 450–850 °C [2]. Recently, NPs of elemental compositions close to SiP and SiP2 have been observed in thermal annealing products of non-stoichiometric silicon oxide containing high amounts of phosphorus introduced during the

Control of morphology and crystallinity of CNTs in flame synthesis with one-dimensional reaction zone

• Muhammad Hilmi Ibrahim,
• Norikhwan Hamzah,
• Mohd Zamri Mohd Yusop,
• Ni Luh Wulan Septiani and
• Mohd Fairus Mohd Yasin

Beilstein J. Nanotechnol. 2023, 14, 741–750, doi:10.3762/bjnano.14.61

• large average CNT diameter with high standard deviation suggests different sizes of formed particles, possibly due to the high temperature. Generally, the size of nanoparticles is affected by several factors, including solution concentration, deposition method, quantity, and annealing [25]. At higher

• temperatures and lower HAB values, the particles can combine, sinter, and increase in size either due to Ostwald ripening or particle migration and coalescence [26]. The agglomeration occurs because of the high temperature, creating conditions similar to annealing. At higher HAB values, where the temperature

The microstrain-accompanied structural phase transition from h-MoO₃ to α-MoO₃ investigated by in situ X-ray diffraction

• Zeqian Zhang,
• Honglong Shi,
• Boxiang Zhuang,
• Minting Luo and
• Zhenfei Hu

Beilstein J. Nanotechnol. 2023, 14, 692–700, doi:10.3762/bjnano.14.55

• 1147.0 (↓ 20.5%), indicating the improvement of the crystallinity of the h-MoO3 phase through annealing. When h-MoO3 transformed into α-MoO3 (i.e., the mass fraction increased from 2.2% to 86%), the corresponding microstrain increased sharply from 1147.0 to 2246.9 (↑ 95.9%), indicating that the h-MoO3→α

Humidity-dependent electrical performance of CuO nanowire networks studied by electrochemical impedance spectroscopy

• Jelena Kosmaca,
• Juris Katkevics,
• Jana Andzane,
• Raitis Sondors,
• Liga Jasulaneca,
• Raimonds Meija,
• Kiryl Niherysh,
• Yelyzaveta Rublova and
• Donats Erts

Beilstein J. Nanotechnol. 2023, 14, 683–691, doi:10.3762/bjnano.14.54

• nanowires synthesized by thermal annealing of copper are a p-type semiconductor material [9][12][14]; its majority charge carriers are positive holes (h+) related to the presence of Cu vacancies or impurities. Under dry conditions, possible ionosorption of oxygen species from air on the nanowire surface

Molecular nanoarchitectonics: unification of nanotechnology and molecular/materials science

• Katsuhiko Ariga

Beilstein J. Nanotechnol. 2023, 14, 434–453, doi:10.3762/bjnano.14.35

• . Dehalogenation of some precursor molecules was induced upon annealing at 420/480 K, forming short chains or cyclic organometallic intermediates. In addition to isolated nanographene containing V-shaped C44 and hexagonal C66 on the platform, formation of polymer chains was confirmed after annealing. The

• )-substituted 5,15-bis(10-bromoanthracen-9-yl)-10,20-bis(trifluoromethyl)porphyrin precursors (Figure 9) [125]. The ends of the formed oligomer preserve CF3 groups after the single-component oligomerization, further enabling sequential block coupling. After annealing the initially built copper porphyrin

• . Sequential block oligomerization was actually demonstrated using cobalt porphyrin molecules and copper porphyrin oligomers upon annealing again at 210 °C. The block elongation was confirmed through the contrast difference of porphyrin centers (concave and convex), corresponding to Cu and Co porphyrin units

Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33