Heat-induced transformation of nickel-coated polycrystalline diamond film studied in situ by XPS and NEXAFS

• Olga V. Sedelnikova,
• Yuliya V. Fedoseeva,
• Dmitriy V. Gorodetskiy,
• Yuri N. Palyanov,
• Elena V. Shlyakhova,
• Eugene A. Maksimovskiy,
• Anna A. Makarova,
• Lyubov G. Bulusheva and
• Aleksandr V. Okotrub

Beilstein J. Nanotechnol. 2025, 16, 887–898, doi:10.3762/bjnano.16.67

• their distinct atomic structures. Diamond is a wide bandgap semiconductor, which makes it resistant to high voltages and ionizing radiation. In contrast, graphitic materials demonstrate excellent electrical conductivity. This divergence in physical properties has encouraged significant interest in

Ar⁺ implantation-induced tailoring of RF-sputtered ZnO films: structural, morphological, and optical properties

• Manu Bura,
• Divya Gupta,
• Arun Kumar and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 872–886, doi:10.3762/bjnano.16.66

• , Urbach energy, and optical bandgap. The low reflectance values of implanted films assure their suitability as transparent windows and anti-reflective coating in various optoelectronic devices. Keywords: AFM; diffuse reflectance; GXRD; polycrystalline; ZnO films; Introduction Zinc oxide has emerged as a

• promising material for device fabrication in different fields, namely, spintronics, nanoelectronics, and photonics [1][2]. It possesses a wide bandgap of 3.37 eV [3] and has a large exciton binding energy of about 60 meV [4], which assures the stability of ZnO film-based devices such as liquid crystal

• optical phonon modes is ascribed to the formation of oxygen vacancies, which are supposed to be electron carriers in ZnO. Therefore, the evolution of the A1 (LO) mode acts as indirect evidence of a rise in carrier concentration, which can in turn alter the optical bandgap. Moreover, the presence of

Insights into the electronic and atomic structures of cerium oxide-based ultrathin films and nanostructures using high-brilliance light sources

• Paola Luches and
• Federico Boscherini

Beilstein J. Nanotechnol. 2025, 16, 860–871, doi:10.3762/bjnano.16.65

• can be exploited to obtain insight into the processes following photoexcitation in photocatalysts, important for the rational optimization of these materials’ efficiency. In ceria, as well as in other semiconducting oxides, the formation of photoinduced small polarons after bandgap photoexcitation

• laser pulses at an energy lower than the cerium oxide bandgap. The four panels on the right of Figure 7 show the variation of the transient absorption as a function of the pump–probe delay time at selected FEL photon energies across the Ce N4,5 edge. The left panel of Figure 7 shows the steady-state Ce

• of this finding is that it provided a direct explanation for the observed sensitization of wide-bandgap oxides, such as cerium oxide, to the visible range through the coupling with suitable plasmonic metal NPs. The NPs convert the resonantly absorbed visible photons into excited charges in the oxide

Supramolecular hydration structure of graphene-based hydrogels: density functional theory, green chemistry and interface application

• Hon Nhien Le,
• Duy Khanh Nguyen,
• Minh Triet Dang,
• Huyen Trinh Nguyen,
• Thi Bang Tam Dao,
• Trung Do Nguyen,
• Chi Nhan Ha Thuc and
• Van Hieu Le

Beilstein J. Nanotechnol. 2025, 16, 806–822, doi:10.3762/bjnano.16.61

• , bandgap energy, and formation energy of the molecular system of bilayer graphene intercalated with a water layer. In the experimental aspect, green chemistry methods were applied for synthesizing GO nanosheets, rice-husk-derived silica gel (SG), nanosilica–zinc hydroxide nanoparticles (SG-ZH), and

• ). The intersheet distance is comparable to the values reported in other papers [29][30][31]. The bilayer graphene structure has a small bandgap of 0.06 eV which is slightly open in comparison to the zero bandgap of a single-layer graphene sheet. Besides, DFT modeling of the water-intercalated AB bilayer

• intersheet distance of 6.626 Å led to the intersheet binding energy of 0.04 eV/atom. A layer of water molecules in between two graphene sheets significantly declined the van der Waals force by 37.5% (from 0.064 to 0.040 eV). The bandgap of the water-intercalated bilayer graphene structure increased to 0.09

Morphology and properties of pyrite nanoparticles obtained by pulsed laser ablation in liquid and thin films for photodetection

• Akshana Parameswaran Sreekala,
• Bindu Krishnan,
• Rene Fabian Cienfuegos Pelaes,
• David Avellaneda Avellaneda,
• Josué Amílcar Aguilar-Martínez and
• Sadasivan Shaji

Beilstein J. Nanotechnol. 2025, 16, 785–805, doi:10.3762/bjnano.16.60

• a narrow bandgap (0.95 eV), high light absorption coefficient (≈105 cm−1), excellent properties in photoelectric conversion, and has enormous potential as an efficient photodetector system and in lithium batteries [1][2]. The prevalent forms of FeS2 are cubic-system pyrite and the orthorhombic

• -system marcasite crystal structure. Due to its low structural symmetry, marcasite FeS2 has a bandgap of only 0.34 eV and, as a result, it is not appropriate for use, particularly with solar energy absorption materials. Hence, the pyrite structure serves as a foundation for almost all studies of systems

• such properties [31]. For instance, it has been demonstrated that the wavelength-shifting characteristics of Si nanoparticles were caused by the effects of quantum-size confinement. The bandgap of silicon increased from its typical 1.1 eV in elemental form to nearly 3 eV in nanoparticle form, enhancing

Nanostructured materials characterized by scanning photoelectron spectromicroscopy

• Matteo Amati,
• Alexey S. Shkvarin,
• Alexander I. Merentsov,
• Alexander N. Titov,
• María Taeño,
• David Maestre,
• Sarah R. McKibbin,
• Zygmunt Milosz,
• Ana Cremades,
• Rainer Timm and
• Luca Gregoratti

Beilstein J. Nanotechnol. 2025, 16, 700–710, doi:10.3762/bjnano.16.54

• , optoelectronic, or photovoltaic devices, as they combine a direct bandgap of tunable size with high charge carrier mobility [20]. Furthermore, they can be grown on Si substrates [21][22], which enables integration with a well-established technology platform and constrains the use of high performance, but

• Ni3+ to reach charge neutrality. Additionally, NiO exhibits a wide bandgap, which also prompts considerable research interest. The properties of NiO are highly dependent on the synthesis method, owing to the variable dimensionality, morphology, crystalline orientation, and defect structure [44

Retrieval of B1 phase from high-pressure B2 phase for CdO nanoparticles by electronic excitations in Cd_xZn_1−xO composite thin films

• Arkaprava Das,
• Marcin Zając and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2025, 16, 551–560, doi:10.3762/bjnano.16.43

• ; Introduction Zinc oxide (ZnO)-based thin films are of significant interest due to their wide bandgap value (3.37 eV at room temperature), transparent electrical conduction, and large excitonic binding energy (60 meV) [1]. In contrast, cadmium oxide (CdO) exhibits a lower bandgap of 2.2 eV, along with high

• electron mobility (>100 cm2/V/s) and high electrical conductivity (>1014 S/cm), demonstrating its potential for optoelectronic applications [2][3][4]. The incorporation of cadmium into ZnO effectively reduces the bandgap, rendering the thin films suitable for applications in the visible region of the

• electromagnetic spectrum [5]. Composite semiconducting thin films have garnered significant attention as their bandgap can be lowered without compromising mobility and conductivity. Beyond optoelectronic applications, CdO–ZnO-based alloys are also employed in gas-sensing technologies [6]. In prior investigations

Water in nanoporous hexagonal boron nitride nanosheets: a first-principles study

• Juliana A. Gonçalves,
• Ronaldo J. C. Batista and
• Marcia C. Barbosa

Beilstein J. Nanotechnol. 2025, 16, 510–519, doi:10.3762/bjnano.16.39

• , and high mechanical strength [20][21]. Additionally, it possesses unique properties compared to graphene, such as a wide bandgap, electrical insulation, and chemical inertness. Because of its remarkable mechanical properties and resistance to oxidation during the desalination process, h-BN can be used

Quantification of lead through rod-shaped silver-doped zinc oxide nanoparticles using an electrochemical approach

• Ravinder Lamba,
• Gaurav Bhanjana,
• Neeraj Dilbaghi,
• Vivek Gupta and
• Sandeep Kumar

Beilstein J. Nanotechnol. 2025, 16, 422–434, doi:10.3762/bjnano.16.33

• , India Department of Physics, Punjab Engineering College (Deemed to be University), Chandigarh, 160012, India 10.3762/bjnano.16.33 Abstract Special features of zinc oxide nanoparticles have drawn a lot of interest due to their wide bandgap, high surface area, photocatalytic activity, antimicrobial

• employed as effective electron mediators [9]. Zinc oxide nanoparticles have gained a lot of attention due to their unique features, such as wide bandgap (approximately 3.37 eV), excellent electron transportation, piezoelectric behavior, semiconductor nature, low toxicity, and enhanced electrochemical

• Ag@ZnO nanorods Figure 4a displays the optical spectra of Ag@ZnO NRs, which was obtained in the 200–600 nm wavelength range. The absorbance peak in this spectrum, which is moved toward a higher wavelength also known as redshift, is shown at 378 nm (for pure ZnO it is 362 nm) [20]. The bandgap energy

Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• the optical bandgap of the films can be tuned from 1.47 ± 0.02 eV to 3.11 ± 0.14 eV. The surface morphology of the films studied using atomic force microscopy reveals that there is uniform grain growth on the surface. Various morphological parameters such as roughness, particle size, particle density

• , skewness, and kurtosis were determined. Current–voltage characteristics indicate that the conductivity of the films increased with substrate temperature. The observed variations in structural, morphological, and optical parameters have been discussed and correlated. The wide bandgap (3.11 eV), high

• crystallinity, high transmittance, and high conductivity of the ZnTe film produced at 600 °C make it a suitable candidate for use as a buffer layer in solar cell applications. Keywords: bandgap; physical properties; RF sputtering; substrate temperature; ZnTe; Introduction The industrialization and burning of

Emerging strategies in the sustainable removal of antibiotics using semiconductor-based photocatalysts

• Yunus Ahmed,
• Keya Rani Dutta,
• Parul Akhtar,
• Md. Arif Hossen,
• Md. Jahangir Alam,
• Obaid A. Alharbi,
• Hamad AlMohamadi and
• Abdul Wahab Mohammad

Beilstein J. Nanotechnol. 2025, 16, 264–285, doi:10.3762/bjnano.16.21

• bandgap, electrons (e−) in the valence band (VB) transition to the conduction band (CB), resulting in the formation of holes (h+) in the VB (photocatalyst + hν → photocatalyst + h+ + e−) [54][55]. Afterwards, the electrons and holes are effectively separated and move toward the surface of the

• (antibiotics + HO• and/or O2•− → CO2 + H2O). Mechanisms of metal, nonmetal, or co-doped photocatalysts The large bandgap and high electron–hole recombination rate of traditional and single semiconductor photocatalysts limit their effectiveness under visible light, which hinders their practical application. To

• CB of the material [58][59]. This action serves to reduce the bandgap, which in turn extends the absorption wavelength edge towards the region of visible light [60][61]. The idea of modifying semiconductor materials in the second generation involves the process of co-doping with both metal and

Recent advances in photothermal nanomaterials for ophthalmic applications

• Jiayuan Zhuang,
• Linhui Jia,
• Chenghao Li,
• Rui Yang,
• Jiapeng Wang,
• Wen-an Wang,
• Heng Zhou and
• Xiangxia Luo

Beilstein J. Nanotechnol. 2025, 16, 195–215, doi:10.3762/bjnano.16.16

• , and inorganic semiconductor materials that absorb light through bandgap transitions [25]. The specific photothermal properties of these materials, encompassing aspects such as range and rate of light absorption, photothermal conversion efficiency, heat transfer capability, and photothermal stability

• levels that fall between those of conductors and insulators. Their light absorption characteristics are primarily determined by their bandgap width, ranging from 0 to 3 eV (Figure 2g) [72]. Semiconductors with narrow bandgaps are capable of absorbing incident light energy that is greater than or equal to

• their bandgap energy (incident wavelength from approximately 310 to 1240 nm) [73], leading to the generation of electron–hole pairs that possess energy equivalent to the bandgap [74]. Once these excited electrons are transferred to impurities, defects, or surface dangling bonds [75], they release energy

Clays enhanced with niobium: potential in wastewater treatment and reuse as pigment with antibacterial activity

• Silvia Jaerger,
• Patricia Appelt,
• Mario Antônio Alves da Cunha,
• Fabián Ccahuana Ayma,
• Ricardo Schneider,
• Carla Bittencourt and
• Fauze Jacó Anaissi

Beilstein J. Nanotechnol. 2025, 16, 141–154, doi:10.3762/bjnano.16.13

• residues from the original organic matter, thus avoiding the disposal of sludge [8]. This approach allows the removal of various organic pollutants, including textile dyes, using solid semiconductors (e.g., NbOPO4 and Nb2O5) and photons (with energy greater than the bandgap energy of the semiconductor) to

• present profiles like BE clay, with intense absorption in the UV region with a sharp drop of around 550 nm [8]. This fact indicates the feasibility of activating the A-BEPh, A-BEPhP, A-BEOx, and A-BEOXPh samples under visible light (above 400 nm) [8]. The indirect bandgap energy values for the BE, NbOPO4

• and Nb2O5 and the bentonite clay modified with niobium BEPh and BEOx samples were estimated by the Tauc method [21]. For this, Kubelka–Munk method was applied as observed in Supporting Information File 1, Figure S2. The bandgap value of the BE sample (3.2 eV) was slightly higher than for the NbOPO4

TiO₂ immobilized on 2D mordenite: effect of hydrolysis conditions on structural, textural, and optical characteristics of the nanocomposites

• Marina G. Shelyapina,
• Rosario Isidro Yocupicio-Gaxiola,
• Gleb A. Valkovsky and
• Vitalii Petranovskii

Beilstein J. Nanotechnol. 2025, 16, 128–140, doi:10.3762/bjnano.16.12

• mesoporosity after calcination due to anatase nanoparticles of about 4 nm preventing the collapse of the interlamellar space. Immobilization of TiO2 on the zeolite surface is evidenced by the formation of Si–O–Ti bonds. The bandgap width of the synthetized nanocomposites was found to be sensitive to the

• efficiency than the bulk phase, but the bandgap of anatase particles smaller than 10 nm is very sensitive to their size [14]. One of the disadvantages of such free photocatalyst nanoparticles is the limitation of mass transfer between solid and liquid phases. From this perspective, the problem of

• the material. However, as it was shown in [44], the formation of a dense anatase phase has a strong influence on both the value of water adsorption energy and the distribution of water adsorption centers. UV–vis spectrometry To determine the bandgap energy Eg, the Tauc method was applied to the

Comparison of organic and inorganic hole transport layers in double perovskite material-based solar cell

• Deepika K and
• Arjun Singh

Beilstein J. Nanotechnol. 2025, 16, 119–127, doi:10.3762/bjnano.16.11

• , the double perovskite layer is sandwiched between the CTLs. In 2021, Kumar et al., reported a PCE of 9.68% for a La2NiMnO6 (LNMO)-based device structure after the bandgap had been optimized using the SCAPS-1D software [12]. In 2022, Porwal et al. reported a PCE of 23.64% with Cs2SnI6 as double

• the modeling of graded device structures up to seven layers and the computing of device parameters such as bandgap energy, efficiency, and J–V characteristics [19]. It helps in understanding the various functions of the device in more detail while indicating the aspects that have the highest impact on

• PEDOT:PSS are the two HTLs that are analyzed concerning the double perovskite material LNMO. The HTL needs better conductivity, better electron blocking, and more hole mobility for better carrier transportation at the perovskite/HTL interface. It is hydrophobic with a wider bandgap and does not easily

Characterization of ZnO nanoparticles synthesized using probiotic Lactiplantibacillus plantarum GP258

• Prashantkumar Siddappa Chakra,
• Aishwarya Banakar,
• Shriram Narayan Puranik,
• Vishwas Kaveeshwar,
• C. R. Ravikumar and
• Devaraja Gayathri

Beilstein J. Nanotechnol. 2025, 16, 78–89, doi:10.3762/bjnano.16.8

• ambient conditions with a bandgap and high exciton binding energy of 3.37 eV and −60 meV, respectively [10]. Because of this high exciton binding energy even at room temperature, the excitonic transitions have a broad range of applications such as in optics, gas detecting, piezoelectrics, and

• + cations. These findings offer information about the structure and chemical interactions within the ZnO NPs (Figure 2b). UV–vis absorption The UV–Vis absorption spectra of ZnO NPs, presented in Figure 2c, establish a distinct absorption peak at 3.16 eV, revealing the characteristic bandgap energy for ZnO

Instance maps as an organising concept for complex experimental workflows as demonstrated for (nano)material safety research

• Benjamin Punz,
• Maja Brajnik,
• Joh Dokler,
• Jaleesia D. Amos,
• Litty Johnson,
• Katie Reilly,
• Anastasios G. Papadiamantis,
• Amaia Green Etxabe,
• Lee Walker,
• Diego S. T. Martinez,
• Steffi Friedrichs,
• Klaus M. Weltring,
• Nazende Günday-Türeli,
• Claus Svendsen,
• Christine Ogilvie Hendren,
• Mark R. Wiesner,
• Martin Himly,
• Iseult Lynch and
• Thomas E. Exner

Beilstein J. Nanotechnol. 2025, 16, 57–77, doi:10.3762/bjnano.16.7

• nanomaterial properties, which can change as the surroundings change (such as zeta potential, which depends on the pH value and ionic strength of the surrounding medium [17]), and intrinsic nanomaterial properties, which are not affected by the surroundings (such as bandgap and structural arrangement) [18

Theoretical study of the electronic and optical properties of a composite formed by the zeolite NaA and a magnetite cluster

• Joel Antúnez-García,
• Roberto Núñez-González,
• Vitalii Petranovskii,
• H’Linh Hmok,
• Armando Reyes-Serrato,
• Fabian N. Murrieta-Rico,
• Mufei Xiao and
• Jonathan Zamora

Beilstein J. Nanotechnol. 2025, 16, 44–53, doi:10.3762/bjnano.16.5

• code employs the APW+lo method in conjunction with density functional theory (DFT) to calculate electronic structures. To determine the exchange–correlation interaction, we utilized the Tran–Blaha-modified Becke–Johnson (TB-mBJ) approximation. This approach provides calculated bandgap values that

• cluster reduces the bandgap and induces a shift in the band structure of the NaA zeolite toward negative energies, approximately by 1 eV. This observation is consistent with the results of prior research studies [61][62][63]. Figure 3c illustrates the band structure corresponding to the isolated magnetite

• bandgap of 6.5 eV, along with additional bandgaps originating from states associated with the bands at 4.5 and 5.2 eV. In Figure 4b, the TDOS for the NaA-M composite is presented, clearly revealing the decoupling of the spin-up and spin-down states, resulting in a “half-semiconductor”-type magnetic

Orientation-dependent photonic bandgaps in gold-dust weevil scales and their titania bioreplicates

• Norma Salvadores Farran,
• Limin Wang,
• Primoz Pirih and
• Bodo D. Wilts

Beilstein J. Nanotechnol. 2025, 16, 1–10, doi:10.3762/bjnano.16.1

• crystallites with different lattice orientations. The reciprocal space images and reflection spectra obtained from single domains indicated a partial photonic bandgap in the wavelength range from 450 to 650 nm. Light reflected from {111}-oriented domains is green-yellow. Light reflected from blue, {100

• replicas that exhibited a 70 to 120 nm redshift of the bandgap, depending on the lattice orientation. The wavelength shift in {100} orientation is supported by full-wave optical modeling of a dual diamond network with an exchanged fill fraction (0.56) of the material with the refractive index in the range

• particular, three-dimensional (3D) photonic crystals are characterized by a photonic bandgap that prohibits light of certain wavelengths from propagating through (specific) orientations of the material [3]. A complete photonic bandgap, where propagation of light waves in a certain wavelength band is

Fabrication of hafnium-based nanoparticles and nanostructures using picosecond laser ablation

• Abhishek Das,
• Mangababu Akkanaboina,
• Jagannath Rathod,
• R. Sai Prasad Goud,
• Kanaka Ravi Kumar,
• Raghu C. Reddy,
• Ratheesh Ravendran,
• Katia Vutova,
• S. V. S. Nageswara Rao and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1639–1653, doi:10.3762/bjnano.15.129

• [8] compared to bulk Hf. HfO2 is a wide-bandgap (5.68 eV) material with a high dielectric constant (≈25) [9][10]. HfC has a very high melting point (≈3900 °C) and ranks among the hardest materials, with a Vickers hardness value exceeding 20 GPa [4][11]. The properties vary substantially depending on

Heterogeneous reactions in a HFCVD reactor: simulation using a 2D model

• Xochitl Aleyda Morán Martínez,
• José Alberto Luna López,
• Zaira Jocelyn Hernández Simón,
• Gabriel Omar Mendoza Conde,
• José Álvaro David Hernández de Luz and
• Godofredo García Salgado

Beilstein J. Nanotechnol. 2024, 15, 1627–1638, doi:10.3762/bjnano.15.128

• ratio x = [O]/[Si], which is determined by controlling key parameters in the deposition process [2]. This ratio determines optical and electrical properties such as bandgap energy, absorption coefficient, photoluminescence, refractive index, and electrical conductivity [3]. SiOx cannot only be obtained

• comparison with that of oxygen, modifying stoichiometry and bandgap [35]. The distribution of H° in zone 2 is a result of the temperature distribution. The concentration is greater near the filaments, decreasing with distance along the y axis away from the quartz sources, where the temperature varies in the

Strain-induced bandgap engineering in 2D ψ-graphene materials: a first-principles study

• Kamal Kumar,
• Nora H. de Leeuw,
• Jost Adam and
• Abhishek Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 1440–1452, doi:10.3762/bjnano.15.116

• applications. However, the metallic nature of these materials restricts their applications in specific domains. Strain engineering is a versatile technique to tailor the distribution of energy levels, including bandgap opening between the energy bands. ψ-Graphene is a newly predicted 2D nanosheet of carbon

• atoms arranged in 5,6,7-membered rings. The half and fully hydrogenated (hydrogen-functionalized) forms of ψ-graphene are called ψ-graphone and ψ-graphane. Like ψ-graphene, ψ-graphone has a zero bandgap, but ψ-graphane is a wide-bandgap semiconductor. In this study, we have applied in-plane and out-of

• -plane biaxial strain on pristine and hydrogenated ψ-graphene. We have obtained a bandgap opening (200 meV) in ψ-graphene at 14% in-plane strain, while ψ-graphone loses its zero-bandgap nature at very low values of applied strain (both +1% and −1%). In contrast, fully hydrogenated ψ-graphene remains

Lithium niobate on insulator: an emerging nanophotonic crystal for optimized light control

• Midhun Murali,
• Amit Banerjee and
• Tanmoy Basu

Beilstein J. Nanotechnol. 2024, 15, 1415–1426, doi:10.3762/bjnano.15.114

• , and spin–photon entanglement), and detection (involving single-photon detectors). Keywords: integrated photonics; lithium niobate; photonic bandgap; photonic crystal; titanium dioxide; Introduction One-dimensional photonic crystals (PhCs) are electromagnetic media in which materials are periodically

• arranged in a certain direction. The periodicity is proportional to the wavelength of light that lies in its photonic bandgap (PBG) [1]. The presence of the PBG and the potential ability to tune its position to match specific frequencies is perhaps the most attractive quality of PhC [2]. The specific

• in refractive index which is crucial for the creation of photonic bandgap [13]. In addition, these two materials are highly used in the photonics industry due to their easy availability and low cost. Moreover, both TiO2 and SiO2 can be integrated with various materials. The precise choice of

Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

• The-Long Phan,
• Le Viet Cuong,
• Vu Dinh Lam and
• Ngoc Toan Dang

Beilstein J. Nanotechnol. 2024, 15, 1390–1399, doi:10.3762/bjnano.15.112

• comparison to other compounds [4][5][6]. Specifically, its large bandgap energy Eg ≈ 3.4 eV is comparable to GaN – a typical material for blue-light-emitting diode (LED) technology [7][8]. Also, its exciton binding energy is higher than the thermal energy at 300 K, and it has high-quality optical

Green synthesis of carbon dot structures from Rheum Ribes and Schottky diode fabrication

• Muhammed Taha Durmus and
• Ebru Bozkurt

Beilstein J. Nanotechnol. 2024, 15, 1369–1375, doi:10.3762/bjnano.15.110

• this diode were examined. The synthesized CDs are spherical with an average size of 5.5 nm, have a negative surface charge and contain 73.3 atom % C, 24.0 atom % O, and 2.7 atom % N. The CDs exhibit fluorescence at approximately 394 nm. The layer thickness and bandgap energy of the prepared CDs film

• the structure of the coated CDs film (Figure 5); the CDs film thickness was determined as ca. 566 nm. In addition, a UV–vis absorption spectrum of the CDs layer was taken (Figure 6a), and the bandgap value of the layer was determined from the graph of hν versus (αhν)2 using the Tauc equation [23]. The

• bandgap value of the CDs layer was 5.25 eV (Figure 6b). The current–voltage (I–V) characteristics of the Si/CDs/Au-based Schottky diode were investigated. I–V measurements of the CDs-based thin film device were carried out using a semiconductor parameter analyzer between −2.5 V and +2.5 V at room