Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain

• Kalai Selvi Kanagarajan and
• Dhanalakshmi Krishnan Sadhasivan

Beilstein J. Nanotechnol. 2024, 15, 713–718, doi:10.3762/bjnano.15.59

• excellent improvement in TFETs, an on-current of 1.00 × 10−5 A/μm, an Ion/Ioff ratio of 7.14 × 1011, and a threshold voltage of 0.28 V. Keywords: dual low-work-function live strip (DLWLS); low-k dielectric spacer; low-work-function live strip (LWLS); Miller capacitance; molybdenum; subthreshold swing (SS

• SiO2 spacer at the drain (DLWLS + spacer), a VTFET with dual low-work-function live strip (DLWLS), and a VTFET with a low-k SiO2 spacer at the drain are shown in Figure 2. Compared to the other two designs, the VTFET with DLWLS + spacer has a higher electron concentration. This is because the high-k