Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• physical and chemical methods such as molecular beam epitaxy [8], electron-beam evaporation [9], thermal evaporation [10], pulsed laser deposition (PLD) [11], and RF sputtering [12]. RF sputtering is a versatile technique because various process parameters such as RF power, deposition time, substrate

The role of a tantalum interlayer in enhancing the properties of Fe₃O₄ thin films

• Hai Dang Ngo,
• Vo Doan Thanh Truong,
• Van Qui Le,
• Hoai Phuong Pham and
• Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

• study of analog resistive switching of Fe3O4-based cross-cell memristive devices [7][8][9][10]. Fe3O4 thin films can be grown by many processes, including molecular beam epitaxy, which is employed for depositing single crystal films, and pulsed laser deposition, which is utilized to achieve epitaxial

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• literature. These encompass methods such as molecular beam epitaxy [17][18][19], direct current magnetron sputtering [4][20][21], and pulsed laser deposition [22][23][24]. Alternative approaches involve techniques such as chemical vapor deposition [25][26][27] and atomic layer deposition [28][29][30]. CuO

Aero-ZnS prepared by physical vapor transport on three-dimensional networks of sacrificial ZnO microtetrapods

• Veaceslav Ursaki,
• Tudor Braniste,
• Victor Zalamai,
• Emil Rusu,
• Vladimir Ciobanu,
• Vadim Morari,
• Daniel Podgornii,
• Pier Carlo Ricci,
• Rainer Adelung and
• Ion Tiginyanu

Beilstein J. Nanotechnol. 2024, 15, 490–499, doi:10.3762/bjnano.15.44

• Department of Material Science, Kiel University, Kiel, Germany 10.3762/bjnano.15.44 Abstract Aeromaterials represent a class of increasingly attractive materials for various applications. Among them, aero-ZnS has been produced by hydride vapor phase epitaxy on sacrificial ZnO templates consisting of

• for the preparation of the abovementioned semiconductor-based aeromaterials. Most of these aeromaterials have been produced by hydride vapor phase epitaxy (HVPE) [11][12][13][14][15][16][17][18]. Particularly, an aero-ZnS material exhibiting hydrophilic properties under tension and hydrophobic

Fragmentation of metal(II) bis(acetylacetonate) complexes induced by slow electrons

• Janina Kopyra and
• Hassan Abdoul-Carime

Beilstein J. Nanotechnol. 2023, 14, 980–987, doi:10.3762/bjnano.14.81

• . Metal bis(acetylacetonate) complexes are of interest for many thin film fabrication techniques (e.g., chemical vapor deposition [9], atomic layer epitaxy [10], or atomic layer etching [11]) and as precursors for carbon materials, such as carbon nanotubes and carbon onion particles [12], or metal oxide

Two-dimensional molecular networks at the solid/liquid interface and the role of alkyl chains in their building blocks

• Suyi Liu,
• Yasuo Norikane and
• Yoshihiro Kikkawa

Beilstein J. Nanotechnol. 2023, 14, 872–892, doi:10.3762/bjnano.14.72

• aromatic units. Generally, dispersion forces are interpreted as non-directional interactions. However, the interaction between HOPG and alkyl chains causes directional orientation because of the epitaxy defined by the threefold symmetric axis of the HOPG lattice, that is, alkyl chains align along the HOPG

• follows: (i) The alkyl chains assist adsorption onto the HOPG surface with epitaxy, enabling the formation of an oriented physisorbed monolayer. Long alkyl chains can have a strong stabilization energy for adsorption, comparable to other strong supramolecular interactions such as hydrogen bonds. (ii) The

Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

Numerical study on all-optical modulation characteristics of quantum cascade lasers

• Biao Wei,
• Haijun Zhou,
• Guangxiang Li and
• Bin Tang

Beilstein J. Nanotechnol. 2022, 13, 1011–1019, doi:10.3762/bjnano.13.88

• multiple nanostructures, which are grown by molecular beam epitaxy (MBE) [1]. It has been widely used in the fields of free space optical communication [2][3], gas detection [4][5], and biological research [6][7]. Because the QCL is a narrow linewidth and high-power laser working in the mid-infrared to

Self-assembly of C₆₀ on a ZnTPP/Fe(001)–p(1 × 1)O substrate: observation of a quasi-freestanding C₆₀ monolayer

• Guglielmo Albani,
• Michele Capra,
• Alessandro Lodesani,
• Alberto Calloni,
• Gianlorenzo Bussetti,
• Marco Finazzi,
• Franco Ciccacci,
• Alberto Brambilla,
• Lamberto Duò and
• Andrea Picone

Beilstein J. Nanotechnol. 2022, 13, 857–864, doi:10.3762/bjnano.13.76

• an ideal buffer layer for the growth of C60, which forms a compact film weakly coupled with the metallic substrate. Materials and Methods The experiments were performed in two ultrahigh vacuum (UHV) systems. Clean Fe(001) is obtained by deposition of a thick Fe film (500 nm) by molecular beam epitaxy

Ultrafast signatures of magnetic inhomogeneity in Pd_1−xFe_x (x ≤ 0.08) epitaxial thin films

• Andrey V. Petrov,
• Sergey I. Nikitin,
• Lenar R. Tagirov,
• Amir I. Gumarov,
• Igor V. Yanilkin and
• Roman V. Yusupov

Beilstein J. Nanotechnol. 2022, 13, 836–844, doi:10.3762/bjnano.13.74

• beam epitaxy (MBE). The films were 20 nm thick, continuous, and smooth monocrystalline layers. The MBE equipment provided uniformity of the film thickness within 3% on the 1″ lateral size. The film composition x was measured in situ using X-ray photoelectron spectroscopy (all from SPECS, Berlin) with a

Recent advances in nanoarchitectures of monocrystalline coordination polymers through confined assembly

• Lingling Xia,
• Qinyue Wang and
• Ming Hu

Beilstein J. Nanotechnol. 2022, 13, 763–777, doi:10.3762/bjnano.13.67

• structure or orientation of the monocrystalline coordination polymers are hardly affected. However, when solids have a similar lattice structure with the grown coordination polymers, epitaxy happens to guide the growth of the coordination polymers. The crystallographic orientation of the grown coordination

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• environmentally friendly solar cells are cells based on zinc oxide (ZnO). ZnO thin films can be obtained using many technologies, including molecular beam epitaxy, RF magnetron sputtering, pulsed laser deposition, chemical vapor deposition, and atomic layer deposition (ALD) [3]. ALD attracts the attention of many

Electromigration-induced formation of percolating adsorbate islands during condensation from the gaseous phase: a computational study

• Alina V. Dvornichenko,
• Vasyl O. Kharchenko and
• Dmitrii O. Kharchenko

Beilstein J. Nanotechnol. 2021, 12, 694–703, doi:10.3762/bjnano.12.55

• of the adsorbate U(r) becomes the following form: This self-consistent approach was widely used not only in the study of the formation of nanoscale structures of adsorbate by condensation [49][50][51][52][53][54][55][56][57][58][59][60][61][62][63] and epitaxy [66][67][68], but also in the study of

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• the transfer onto NW substrates [31]. Therefore, we used stable orthogonal frames from polydimethylsiloxane (PDMS) polymer to stabilize the graphene during the transfer process [32]. The GaN NW substrates were fabricated by plasma-assisted molecular beam epitaxy (PAMBE) in N-rich conditions on (111

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• obtained via chemical methods [28][29] or via vapor–solid–liquid (VLS) and, less frequently, vapor–solid–solid (VSS) mechanisms. A metallic droplet (liquid or solid) acts as a catalyst, in chemical vapor deposition (CVD), or as a seed, in molecular beam epitaxy (MBE), for the NW growth [7][30][31]. By

• heteroepitaxial growth, it may be considered valid also for solid-phase epitaxy, which occurs in our system (Mn wetting layer on Ge), since the key role in the process is the mechanism of diffusion of adatoms (i.e., Mn) occurring also during the annealing process. According to this model, the optimal island shape

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

• Nico Klingner,
• Gregor Hlawacek,
• Paul Mazarov,
• Wolfgang Pilz,
• Fabian Meyer and
• Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

• mass-separated FIBs from a Co36Nd64 LMAIS to implant Co into Si at elevated temperatures, leading to metallic CoSi2 nanostructures down to 20 nm [13]. Ge nanowires could be grown by molecular beam epitaxy, via a vapor–liquid–solid process, on a Si substrate after formation of a regular seed array using

PTCDA adsorption on CaF₂ thin films

• Philipp Rahe

Beilstein J. Nanotechnol. 2020, 11, 1615–1622, doi:10.3762/bjnano.11.144

• -state imaging of the (7 × 7) reconstruction [27]. Due to the type-B epitaxy of CaF2 on Si(111) at the chosen growth parameters, the CaF2 direction is identical to the Si direction that was determined from STM images. Three equivalent CaF2 directions are depicted at the right of the exemplary image in

Self-assembly and spectroscopic fingerprints of photoactive pyrenyl tectons on hBN/Cu(111)

• Domenik M. Zimmermann,
• Knud Seufert,
• Luka Ðorđević,
• Tobias Hoh,
• Sushobhan Joshi,
• Tomas Marangoni,
• Davide Bonifazi and
• Willi Auwärter

Beilstein J. Nanotechnol. 2020, 11, 1470–1483, doi:10.3762/bjnano.11.130

• coverage of the pyrene modules was deposited by organic molecular beam epitaxy from thoroughly degassed quartz crucibles held at 450–500 K. During deposition, the Cu(111) surface was kept at rt, and the pressure remained below 2 × 10–9 mbar. The STM images were acquired in constant current mode, with the

Protruding hydrogen atoms as markers for the molecular orientation of a metallocene

• Linda Laflör,
• Michael Reichling and
• Philipp Rahe

Beilstein J. Nanotechnol. 2020, 11, 1432–1438, doi:10.3762/bjnano.11.127

• determined by considering the B-type epitaxy of the CaF2/CaF1/Si(111) thin films samples, see [22][26] for further details. STM and NC-AFM experiments were conducted at low temperatures (5 and 77 K) in two separate systems. Experiments on bulk crystals were performed using an Omicron LT qPlus gen.III

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• wetting layer in between. The molecular beam epitaxy (MBE) experiments show that there is no material exchange between the gold droplets formed on the silicon oxide substrate. The data indicate a re-evaporation process at elevated temperatures, which is due to a temperature-induced overall reduction of

Growth of a self-assembled monolayer decoupled from the substrate: nucleation on-command using buffer layers

• Robby Reynaerts,
• Kunal S. Mali and
• Steven De Feyter

Beilstein J. Nanotechnol. 2020, 11, 1291–1302, doi:10.3762/bjnano.11.113

• alkyl chains because the soft-epitaxy of such chains with the graphite lattice is well established [43][44][45]. In this contribution, we present a systematic, curiosity-driven study of the self-assembly of a relatively simple building block, namely 4-tetradecyloxybenzoic acid (BA-OC14, Figure 1a), with

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111)

• Maximilian Schaal,
• Takumi Aihara,
• Marco Gruenewald,
• Felix Otto,
• Jari Domke,
• Roman Forker,
• Hiroyuki Yoshida and
• Torsten Fritz

Beilstein J. Nanotechnol. 2020, 11, 1168–1177, doi:10.3762/bjnano.11.101

• corresponding epitaxy matrix as well as the lattice parameters are summarized in Table 1. We used the projection method proposed by Forker et al. to identify possible coincidences of the adsorbate and the substrate lattice [35]. We find more than one possible coincidence within the error margin of the epitaxy

• vector is labeled with δ. Before each epitaxy matrix a prefactor along with its margin of error indicates the absolute scaling uncertainty of the analyzed LEED image. Please note that the epitaxy matrix of DBP on Au(111) and on Ag(111) deviates from the matrix of DBP on h-BN/Ni(111) because of different

• lattice constants of the substrate as well as slightly different lattice parameters of the adsorbate. We used the acronyms POL and LOL (for point-on-line and line-on-line epitaxy) to characterize the type of epitaxy. The uncertainty of the numerical fitting procedure is given in parentheses behind each

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• a GaAsSb NW IR detector (1300 nm), although the responsivity of the GaAsSb NW detector is better [34]. A photodetector based on a single GaAs nanowire with a responsivity of 1.2 mA·W−1 has been recently reported on a nanowire prepared by chemical beam epitaxy (CBE) with a vapor–liquid–solid (VLS

• our GaAs nanowire detector working in the photoconductor mode is by a factor of 1.5 better than the value obtained recently on molecular beam epitaxy (MBE)-grown Si-doped GaAs nanowires with a carrier concentration of 1.47 × 1017 cm−3, working in the field-effect transistor (FET) mode at similar

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) [2][7][10][11], DC [12][13] and RF [1][3][6] magnetron sputtering, pulsed laser deposition (PLD) [14][15], plasma-enhanced atomic layer deposition (PE-ALD) [16], chemical vapor deposition (CVD) [17], metal–organic chemical vapor deposition