A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• mobility; contact resistance; differential Hall effect; dopant activation; fully depleted silicon on insulator (FDSOI); laser annealing; sub-nanometre resolution; Introduction The research efforts made throughout the last decades have made it possible to keep the momentum for a continuous miniaturization

• of electronics devices. For instance, the “bulk” planar transistor limitations have been overcome thanks to the transition towards more complex device architectures. These include enhanced planar architectures such as fully depleted silicon on insulator (FDSOI) [1] or 3D architectures ranging from