Radiosensitizing properties of dual-functionalized carbon nanostructures loaded with temozolomide

• Radmila Milenkovska,
• Nikola Geskovski,
• Dushko Shalabalija,
• Ljubica Mihailova,
• Petre Makreski,
• Dushko Lukarski,
• Igor Stojkovski,
• Maja Simonoska Crcarevska and
• Kristina Mladenovska

Beilstein J. Nanotechnol. 2025, 16, 229–251, doi:10.3762/bjnano.16.18

• sp3-hybridization of the carbon atoms in the CNTs; the position and intensity of the G band related to the E2g phonon mode of sp2-bonded carbon atoms in the 1600–1500 cm−1 region; the bands from the so-called low-frequency radial breathing mode (below 300 cm−1), sensitive to the diameter and chirality

Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

• The-Long Phan,
• Le Viet Cuong,
• Vu Dinh Lam and
• Ngoc Toan Dang

Beilstein J. Nanotechnol. 2024, 15, 1390–1399, doi:10.3762/bjnano.15.112

• down to collect white products formed on Si substrates. They were characterized by scanning electron microscopy (SEM, JEOL-6330F) and energy-dispersive X-ray (EDX) spectroscopy. Renishaw’s RS and PL spectrometers operating with laser wavelengths of 488 and 325 nm were also employed to study phonon

Investigation of Hf/Ti bilayers for the development of transition-edge sensor microcalorimeters

• Victoria Y. Safonova,
• Anna V. Gordeeva,
• Anton V. Blagodatkin,
• Dmitry A. Pimanov,
• Anton A. Yablokov and
• Andrey L. Pankratov

Beilstein J. Nanotechnol. 2024, 15, 1353–1361, doi:10.3762/bjnano.15.108

• [20]: where NEP is the noise equivalent power. The NEP is equal to the ratio of the total noise power spectral density IN to the ampere–watt sensitivity SI(ω). The total noise is composed of four components, namely, phonon noise , Nyquist TES noise , Nyquist external circuit noise , and the readout

• × 10−10 W/K, calculated for the electron–phonon constant of 0.8 nW/K6/μm3, and the sixth degree of temperature according to [22]. Figure 7 shows the ampere–watt sensitivity and noise characteristics of the TES with above parameters for sample A4. The maximum current response is observed at frequencies

A low-kiloelectronvolt focused ion beam strategy for processing low-thermal-conductance materials with nanoampere currents

• Annalena Wolff,
• Nico Klingner,
• William Thompson,
• Yinghong Zhou,
• Jinying Lin and
• Yin Xiao

Beilstein J. Nanotechnol. 2024, 15, 1197–1207, doi:10.3762/bjnano.15.97

• range Rproj is marked as the dashed line in the ion trajectories plot. The peak phonon and ionization positions are marked in the collision cascade plots (B) as a dotted line. COMSOL simulations of 5 keV gallium ions (Ga+) interacting with collagen. Top row: Single ion impact simulations. (A) Top view

Quantum-to-classical modeling of monolayer Ge₂Se₂ and its application in photovoltaic devices

• Anup Shrivastava,
• Shivani Saini,
• Dolly Kumari,
• Sanjai Singh and
• Jost Adam

Beilstein J. Nanotechnol. 2024, 15, 1153–1169, doi:10.3762/bjnano.15.94

• astonishing device performance. We use ab initio modeling for the material prediction, while classical drift–diffusion drives the device simulations. Hybrid functionals calculate electronic and optical properties to maintain high accuracy. The structural stability has been verified using phonon spectra. The E

• . Furthermore, to test the stability of the crystal structure, we have computed the phonon band dispersion for monolayer Ge2Se2 within the first Brillouin zone (Figure 2c). The calculated phonon spectra along the high symmetry path Γ-X-S-Y-Γ in the first Brillouin zone are shown in Figure 2d. The phonon

• transverse acoustic mode, similar to those in other two-dimensional materials such as graphene, phosphorene, and stanene, demonstrating a quadratic nature near the Γ point [43][44][45]. Figure 2d clearly depicts that all phonon bands throughout the spectrum have non-imaginary frequency, further confirming

Photocatalytic methane oxidation over a TiO₂/SiNWs p–n junction catalyst at room temperature

• Qui Thanh Hoai Ta,
• Luan Minh Nguyen,
• Ngoc Hoi Nguyen,
• Phan Khanh Thinh Nguyen and
• Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

• 146 cm−1, and (ii) the TO phonon mode of Si (Figure 4b) [47][48][49]. Consequently, the combined surface-sensitive Raman and bulk-sensitive XRD results reveal that the n-type TiO2 coating layer on p-type SiNWs does not influence the crystalline structure. Photocatalytic OCM The photocatalytic OCM

Interface properties of nanostructured carbon-coated biological implants: an overview

• Mattia Bartoli,
• Francesca Cardano,
• Erik Piatti,
• Stefania Lettieri,
• Andrea Fin and
• Alberto Tagliaferro

Beilstein J. Nanotechnol. 2024, 15, 1041–1053, doi:10.3762/bjnano.15.85

• those of individual CNTs [71]. Nanodiamonds NDs are a carbon allotrope composed by sp3-hybridized carbon atoms arranged in a tetrahedral crystalline lattice structure [72]. The structure is accountable for the high thermal conductivity due to efficient heat conduction through phonon vibrations, which

• can reach 550 W·m−1·K−1 after sintering at high pressure [73]. Nevertheless, surface defects and the granular shape of the NDs represent boundaries for phonon transport reducing the thermal energy propagation [74]. Furthermore, the thermal conductivity of NDs increases with the increment of

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• composition can be identified. Each form of copper oxide presents a different Raman spectrum. CuO crystallizes in a monoclinic lattice with the space group giving the following set of the zone-center lattice modes: Γ = Ag + 2Bg + 4Au + 5Bu. Hence, CuO has twelve phonon branches in the phonon dispersion

• reference sample (Si ref.), which was a pure silicon wafer, was also studied for comparison (Figure 5A). Comparing the Raman spectra of CuO/Si samples with the spectrum of the Si reference sample, one can notice a dominating phonon mode at a frequency of 521 cm−1 originating from the silicon substrate [57

• the CuO-like phonon mode frequencies that have been documented by other authors [56][58][59][60]. Thus, the obtained results confirm the cupric phase of the copper oxide layer. After comparing the Raman spectra of all CuO/Si structures, it can be noticed that the 2× and 3× samples exhibit the best

Aero-ZnS prepared by physical vapor transport on three-dimensional networks of sacrificial ZnO microtetrapods

• Veaceslav Ursaki,
• Tudor Braniste,
• Victor Zalamai,
• Emil Rusu,
• Vladimir Ciobanu,
• Vadim Morari,
• Daniel Podgornii,
• Pier Carlo Ricci,
• Rainer Adelung and
• Ion Tiginyanu

Beilstein J. Nanotechnol. 2024, 15, 490–499, doi:10.3762/bjnano.15.44

• peak position (3.726 eV) is nearly equal to the 2LO phonon energy in ZnS. The non-resonant Raman scattering measured with the excitation by the 785 nm laser line, shown in the inset of Figure 6b, clearly indicates the presence of a Raman scattering peak at 350 cm−1 (43 meV), which corresponds to the LO

• phonon energy in both the zinc blende and the wurtzite ZnS phases. Apart from that, Raman scattering peaks are observed at 275–280 and 220 cm−1, which are assigned to the TO and 2LA Raman scattering, respectively [33][34]. Therefore, the quantum energy of the PL excitation laser line of 325 nm (3.814 eV

• ) is in resonance with the exciton energy in zinc blende ZnS [35], and the conditions for RRS are satisfied [36], while the difference between the PL excitation laser line of 325 nm (3.814 eV) and the position of the 3.726 eV emission peak is nearly equal to the 2LO phonon energy (88 meV). The

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• , different information can be derived from the measurement of the Raman features (frequencies, linewidths, and intensities) of intralayer phonon modes as well as those of the interlayer modes, the so-called layer breathing (LB) modes and shear (S) modes. Recently, we have developed the reproducible direct

• of the results. The first parameter is the wavelength of the incident laser light used in the Raman experiments. As it will be detailed in the following, the measurements of the frequencies, linewidths, and intensity of first-order Raman active phonon modes of MoS2 have to be obtained with good

• accuracy in order to evaluate the thickness of a MoS2 flake. These phonons modes are (i) the in-plane phonon mode involving relative motion of Mo and S atoms with E′ symmetry for a monolayer (E12g for bulk) and (ii) the out-of-plane phonon mode involving only out-of-plane motions of S atoms with A′1

Density functional theory study of Au-fcc/Ge and Au-hcp/Ge interfaces

• Olga Sikora,
• Małgorzata Sternik,
• Benedykt R. Jany,
• Franciszek Krok,
• Przemysław Piekarz and
• Andrzej M. Oleś

Beilstein J. Nanotechnol. 2023, 14, 1093–1105, doi:10.3762/bjnano.14.90

• principles calculations of the cohesive energy and elastic constants as well as phonon dispersion relations show stability of both hcp and dhcp polytypes of gold [24]. Ab initio studies indicate higher stability of the fcc phase and a tendency towards hcp → fcc phase transformation. However, the calculated

Nanoarchitectonics of photothermal materials to enhance the sensitivity of lateral flow assays

• Elangovan Sarathkumar,
• Rajasekharan S. Anjana and
• Ramapurath S. Jayasree

Beilstein J. Nanotechnol. 2023, 14, 988–1003, doi:10.3762/bjnano.14.82

• are likely to occur, namely (i) the relaxation of electrons from non-Fermi levels to the Fermi level (electron–electron scattering), (ii) the cooling of hot electron gas through electron–phonon scattering, and (iii) the emission of heat to the surrounding (phonon–phonon scattering) (Figure 4A,B). The

Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• discernible shoulder at ca. 350 cm−1, a weak band centered at 170 cm−1, as well as a broad band centered at 475 cm−1 with a shoulder at ca. 525 cm−1. The band at a wavenumber of 525 cm−1 can plausibly be designated to the highest-frequency Si–P vibration as the Γ-point optical phonon of Si is positioned at

In situ magnesiothermic reduction synthesis of a Ge@C composite for high-performance lithium-ion batterie anodes

• Ha Tran Huu,
• Ngoc Phi Nguyen,
• Vuong Hoang Ngo,
• Huy Hoang Luc,
• Minh Kha Le,
• Minh Thu Nguyen,
• My Loan Phung Le,
• Hye Rim Kim,
• In Young Kim,
• Sung Jin Kim,
• Van Man Tran and
• Vien Vo

Beilstein J. Nanotechnol. 2023, 14, 751–761, doi:10.3762/bjnano.14.62

• Figure 1c, the Raman spectrum of pure Ge exhibits a signal at 83 cm−1, attributed to the transverse acoustic phonon mode, and two peaks at 127 and 169 cm−1 ascribed, respectively, to the longitudinal acoustic and longitudinal optic phonon modes of Ge–Ge bonds [40][41]. The sharp peak at 296 cm−1 and a

• low-intensity band around 550 cm−1 are assigned to the first-order and second-order transverse optic phonon modes of crystalline Ge [41][42][43]. Moreover, the broadband detected at 449 cm−1 corresponds to the customary Raman-active motion of α-GeO2 [44]. The presence of characteristic signals in the

Control of morphology and crystallinity of CNTs in flame synthesis with one-dimensional reaction zone

• Muhammad Hilmi Ibrahim,
• Norikhwan Hamzah,
• Mohd Zamri Mohd Yusop,
• Ni Luh Wulan Septiani and
• Mohd Fairus Mohd Yasin

Beilstein J. Nanotechnol. 2023, 14, 741–750, doi:10.3762/bjnano.14.61

• defects and disorders of the sp2-hybridized sidewalls, while the G′ peak at 2500–2900 cm−1 represents photon–phonon interactions [27]. The absence of a low-frequency peak below 200 cm−1, usually assigned to the A1g symmetry radial breathing mode, which is the main characteristic of SWCNTs [28], indicates

Thermal transport in kinked nanowires through simulation

• Alexander N. Robillard,
• Graham W. Gibson and
• Ralf Meyer

Beilstein J. Nanotechnol. 2023, 14, 586–602, doi:10.3762/bjnano.14.49

• completely understood. The behaviour of the conductance is examined as kinks of varying angular intensity are included into nanowires. The effects on thermal transport are evaluated through molecular dynamics simulations, phonon Monte Carlo simulations and classical solutions of the Fourier equation. A

• phonon reflection specularity on the heat flux is also examined. It is found that, in general, the flow of heat through systems simulated through phonon Monte Carlo methods is concentrated into a channel smaller than the wire dimensions, while this is not the case in the classical solutions of the

• Fourier model. Keywords: ballistic transport; kinked nanowire; molecular dynamics; phonon Monte Carlo; thermal transport; Introduction The thermal conductivity of semiconductor nanostructures is of great interest because of potential applications in a wide variety of fields, such as thermal control

Transferability of interatomic potentials for silicene

• Marcin Maździarz

Beilstein J. Nanotechnol. 2023, 14, 574–585, doi:10.3762/bjnano.14.48

• (TDS), honeycomb dumbbell (HDS), and large honeycomb dumbbell (LHDS) silicene [8]. There are still doubts about their dynamic stability. For example, for a flat phase, the negative ZO phonon mode could be removed by the selection of an appropriate substrate [3][9]. The ability of potentials for 3D

• -principles method and then to test the ability of different interatomic potentials to reproduce these properties. Methods Analyzing the available literature concerning all phases of single-layer Si, it is not feasible to find all structural, mechanical, and phonon data obtained in one consistent way. The

• cohesive energy, average bond length, average height, 2D elastic constants, as well as phonon data are determined here using a single consistent first-principles approach as described in the next section “Ab initio calculations”. These data were further considered as reference data and marked as “valueDFT

Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

• effective localization of the incident photon energy, and the decay of this oscillation (through phenomena such as electron–electron, electron–phonon, and electron–surface scattering) releases the absorbed energy into the lattice as heat (or as photons), often making them efficient tunable PT energy

• -radiative relaxation occurs through the sequential processes of hot carrier generation, electron thermalization, and finally electron–phonon coupling heat transfer [65], leading to a temperature increase of the lattice (Figure 8 [66] and Figure 9). Thus, the energy exchange between energetic plasmons and

• the phonon modes leads to an increase in temperature of the metal nanoparticles, and the ultimate conduction of this heat to the surrounding. The exchange time will vary for small nanoparticles due to quantum confinement effects [65] observed when the size of the nanoparticle is comparable to the Bohr

Intermodal coupling spectroscopy of mechanical modes in microcantilevers

• Ioan Ignat,
• Bernhard Schuster,
• Jonas Hafner,
• MinHee Kwon,
• Daniel Platz and
• Ulrich Schmid

Beilstein J. Nanotechnol. 2023, 14, 123–132, doi:10.3762/bjnano.14.13

• mode splitting is a good way to measure the coupling rates. Here, the phonons from the first mode will have their frequency upconverted to the same as the second mode’s phonons, thus allowing them to interact. This pump effectively amplifies the single phonon–phonon coupling rate of the mode

• role of the cavity mode in cavity optomechanics, respectively. Xi and Xj are their respective amplitudes, is the amplitude of the pump in meters, is the directional single phonon–phonon parametric coupling rate in Hz/meters. The last term describes a small signal Vsense, proportional to the voltage

• couplings at the same time. Innumerable applications include those studied in optomechanics and electromechanics, as well as theoretical implementations yet to be seen in practice, all powered by phonon–phonon interactions. Not only bringing improvements to common AFM tools, but providing opportunities for

Enhanced electronic transport properties of Te roll-like nanostructures

• E. R. Viana,
• N. Cifuentes and
• J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

• cm2/Vs at 5 K. The thermal ionization of shallow acceptors, with small ionization energy between 2 and 4 meV, leads to free-hole conduction at high temperatures. The free-hole mobility follows a negative power-law temperature behavior, with an exponent between −1.28 and −1.42, indicating strong phonon

• the mobility is mainly limited by phonon scattering at high temperatures, α is close to 3/2 [33][34]. Nveff is the effective density of states of the valence band, EA is the shallow acceptor ionization energy [33], and kB is Boltzmann’s constant. At lower temperatures, most of the free holes are

Analytical and numerical design of a hybrid Fabry–Perot plano-concave microcavity for hexagonal boron nitride

• Felipe Ortiz-Huerta and
• Karina Garay-Palmett

Beilstein J. Nanotechnol. 2022, 13, 1030–1037, doi:10.3762/bjnano.13.90

• our system (2D material + DBR stack) to have a maximum reflectivity at the center wavelength of 637 nm. The selected wavelength of our system falls within the typical emission rates of the zero-phonon line (ZPL) of SPEs in hBN (500–800 nm). A quarter-wavelength thickness is conveniently chosen for the

Numerical study on all-optical modulation characteristics of quantum cascade lasers

• Biao Wei,
• Haijun Zhou,
• Guangxiang Li and
• Bin Tang

Beilstein J. Nanotechnol. 2022, 13, 1011–1019, doi:10.3762/bjnano.13.88

• standard 35-stage In0.52Al0.48As/In0.53Ga0.47As type-I four-level Fabry–Perot QCL based on a two-phonon-resonance design [27]. Current injection efficiency is defined as the ratio of current to total current injected into the upper subband of the QCL in the active region, which is close to 56%. The QCL

Efficiency of electron cooling in cold-electron bolometers with traps

• Dmitrii A. Pimanov,
• Vladimir A. Frost,
• Anton V. Blagodatkin,
• Anna V. Gordeeva,
• Andrey L. Pankratov and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 896–901, doi:10.3762/bjnano.13.80

• superconductor/ferromagnet hybrid absorbers based on Al/Fe films, as the previous samples. However, there are different oxidation parameters. This work aims to improve our new fit methodology, which takes into account both leakage and Andreev currents and also uses the sixth power of phonon and electron

• solves the equations of the stationary CEB theory [16]. We use the approach based on solving the heat balance equation [7]: where PN is Joule heating in the absorber. is the heat flux between electron and phonon subsystems, taken with the sixth power [17] due to low electron temperature in our

• experiments (in our previous calculations we have used the fifth power). Σ is the electron–phonon coupling constant; it has different values, depending on the electron temperature [17]. VN is the absorber volume, Pcool is the direct electron cooling power, PS is the net power transferred to the S-electrode

Numerical modeling of a multi-frequency receiving system based on an array of dipole antennas for LSPE-SWIPE

• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Dmitrii A. Pimanov,
• Ekaterina A. Matrozova,
• Anna V. Gordeeva,
• Andrey L. Pankratov and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 865–872, doi:10.3762/bjnano.13.77

• electronic subsystem of the CEB absorber [6][7][8]. Another key advantage for balloon and space missions is the high immunity of CEB against cosmic rays [9] due to a double protection given by the extremely small volume of the absorber and decoupling of electron and phonon systems. One of the advantages of

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• ± 3.0 cm−1 (Figure 2f,i), implying high-quality monolayer graphene. Together, the data further support uniformity and crystallinity of the sample. The G phonon band arises from double degeneracy of iTO and iLO phonon modes (E2g symmetry) at the Brillouin zone center, which is an in-plane vibration of

• the PMMA mixture, we consider that the differences in Raman spectra between the different samples can be attributed to adsorbed PMMA residues. Such residues could absorb water and oxygen molecules, conferring p-type doping to graphene [29]. Conversely, by tracking the G phonon band features in Raman

• ). The broader G phonon band observed for the B2 samples reveals that a significantly higher number of inter-band decay pathways are available due to a lower Pauli blocking threshold [23] (equivalent to twice |EF|), further indicating that the p-type doping caused by adsorbed PMMA is less intense for the