Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• ; integrated PIN diode; nanoprobing; scanning probe microscopy (SPM); scanning microwave impedance microscopy (sMIM); spectroscopy; Introduction In “front end of line” (FEOL) processing, the control, detection, and quantification of the effective 2D distributions of active dopants in semiconductors are

• to record the spreading resistance. However, depending on the local properties of the material, the optimum force can vary in a same scan. More recently, scanning microwave impedance microscopy (sMIM) [20][21] was implemented on AFM. The originality of this mode comes from the use of an

• ) (doped semiconducting layers) and “back end of line” (BEOL) layers (metallization, trench dielectric, and isolation) of highly integrated microelectronic devices. Based on atomic force microscopy, an electromagnetically shielded and electrically conductive tip is used in scanning microwave impedance