Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• can be flipped by STT [10] in one nanowire [9][11]. Comparing with the classical trilayer system (including one hard layer with fixed magnetization, one free layer, and one nonmagnetic spacer layer in between) [10], the presence of more free layers enhances, for example, the magnetoresistance (MR) [7

Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

• (simplistically viewed as a ring within a ring). The coupling strength and energy between the plasmons on the inner and outer shells will determine the plasmon properties, which can be tuned by altering the dielectric spacer layer as well as the thickness of the specific nanoshells. Because of this intensified

Controllable two- and three-state magnetization switching in single-layer epitaxial Pd_1−xFe_x films and an epitaxial Pd_0.92Fe_0.08/Ag/Pd_0.96Fe_0.04 heterostructure

• Igor V. Yanilkin,
• Amir I. Gumarov,
• Gulnaz F. Gizzatullina,
• Roman V. Yusupov and
• Lenar R. Tagirov

Beilstein J. Nanotechnol. 2022, 13, 334–343, doi:10.3762/bjnano.13.28

• PdFe1 and PdFe2 layers. It is achieved by introducing the non-magnetic spacer layer N of silver satisfying the epitaxial growth conditions. The different coercive fields were obtained choosing the Pd0.92Fe0.08 and Pd0.96Fe0.04 compositions for the ferromagnetic PdFe1 and PdFe2 layers [18]. Figure 6

Self-assembly and spectroscopic fingerprints of photoactive pyrenyl tectons on hBN/Cu(111)

• Domenik M. Zimmermann,
• Knud Seufert,
• Luka Ðorđević,
• Tobias Hoh,
• Sushobhan Joshi,
• Tomas Marangoni,
• Davide Bonifazi and
• Willi Auwärter

Beilstein J. Nanotechnol. 2020, 11, 1470–1483, doi:10.3762/bjnano.11.130

• of well-defined, narrow molecular resonances and large HOMO–LUMO gaps evidenced a reduction of the electronic molecule–support interactions by the hBN spacer layer, as previously reported for adsorbates on hBN/Cu(111) [28][35][36][37][38] and other hBN/metal supports [18][19][20][79][80]. The dI/dV

Proximity effect in [Nb(1.5 nm)/Fe(x)]₁₀/Nb(50 nm) superconductor/ferromagnet heterostructures

• Yury Khaydukov,
• Sabine Pütter,
• Laura Guasco,
• Roman Morari,
• Gideok Kim,
• Thomas Keller,
• Anatolie Sidorenko and
• Bernhard Keimer

Beilstein J. Nanotechnol. 2020, 11, 1254–1263, doi:10.3762/bjnano.11.109

• following work of the same group [39] the modification of IEC by hydrogen uptake was reported. An advantage of niobium as N spacer is that it is the superconducting material with the highest bulk TC = 9.3 K among all elemental superconductors. However, the thickest Nb spacer layer where AP alignment is

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111)

• Maximilian Schaal,
• Takumi Aihara,
• Marco Gruenewald,
• Felix Otto,
• Jari Domke,
• Roman Forker,
• Hiroyuki Yoshida and
• Torsten Fritz

Beilstein J. Nanotechnol. 2020, 11, 1168–1177, doi:10.3762/bjnano.11.101

• through different ways such as the usage of wide-band-gap insulator thin films (e.g., oxides, alkali halides) [3][4], a molecular spacer layer [5][6], or sp2-hybridized two-dimensional interlayers (e.g., graphene and hexagonal boron nitride (h-BN)) [7][8]. The advantageous properties of an h-BN monolayer

Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Lothar Weinhardt,
• Monika Blum,
• Clemens Heske,
• Wanli Yang,
• Ilona Oja Acik and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

• less [62]. Otherwise, most of the incident light is absorbed before reaching the optical spacer layer and the optical spacer effect is not seen. The optical spacer effect is illustrated in the EQE spectrum (Figure 3c) of one of the best-performing devices (100 nm Sb2S3, 7.1 mm2) coupled with the

Giant magnetoresistance ratio in a current-perpendicular-to-plane spin valve based on an inverse Heusler alloy Ti₂NiAl

• Yu Feng,
• Zhou Cui,
• Bo Wu,
• Jianwei Li,
• Hongkuan Yuan and
• Hong Chen

Beilstein J. Nanotechnol. 2019, 10, 1658–1665, doi:10.3762/bjnano.10.161

• employed as a semi-infinite left and right electrode, and Ag is selected to be the middle spacer layer. For bulk Ti2NiAl, one Ti atom locates at the (0, 0, 0) site, which is described as TiA, and the other locates at the (0.25, 0.25, 0.25) site, which is described as TiB, where Ni and Al sit at (0.5, 0.5

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• for 1 h. A 4.5 nm thick Si3N4 spacer layer served to suppress excited electrons from the Si wafer to interfere with electrons from the Si-NWell during UPS. Samples comprising a SiO2-embedded NWell were processed by etching the top c-Si layer of an Si-on-insulator (SOI) wafer with 200 nm buried SiO2

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers

• Deepika Jhajhria,
• Dinesh K. Pandya and
• Sujeet Chaudhary

Beilstein J. Nanotechnol. 2018, 9, 2198–2208, doi:10.3762/bjnano.9.206

• . The asymmetric hysteresis loop and training effect observed at low temperature is related to the presence of a metastable AF domain state. We show that both the static and dynamic magnetic properties of trilayer films can be adjusted over a wide range by changing the thickness of the IrMn spacer layer

• magnetization hysteresis (M–H) measurements. We find compelling evidence that the two CoFeB layers are dynamically exchange-coupled through the IrMn spacer layer up to a thickness tIrMn = 6 nm. The dynamic exchange coupling is discussed in terms of interaction between two CoFeB layers mediated by the IrMn layer

• steps from 0 to 7 nm. The IrMn spacer layer was deposited at a lower growth rate (i.e., 0.17 Å/s compared to 1.3 Å/s for CoFeB) for better uniformity and lower interfacial roughness. In another sample series, the tIrMn was kept constant at 2 nm while the thickness of the top and bottom FM layers tCoFeB

Adsorption and electronic properties of pentacene on thin dielectric decoupling layers

• Sebastian Koslowski,
• Daniel Rosenblatt,
• Alexander Kabakchiev,
• Klaus Kuhnke,
• Klaus Kern and
• Uta Schlickum

Beilstein J. Nanotechnol. 2017, 8, 1388–1395, doi:10.3762/bjnano.8.140

• to sufficiently separate (electronically decouple) the molecules from the underlying metal substrate by means of thin insulating layers (decoupling layers) [6]. To achieve this, a thin spacer layer with a large band gap of several electronvolts can be used that acts as a tunnel barrier towards the

Computing the T-matrix of a scattering object with multiple plane wave illuminations

• Martin Fruhnert,
• Ivan Fernandez-Corbaton,
• Vassilios Yannopapas and
• Carsten Rockstuhl

Beilstein J. Nanotechnol. 2017, 8, 614–626, doi:10.3762/bjnano.8.66

• metallic disks, usually separated by a dielectric spacer layer. This particle is preferably fabricated by top-down procedures, such as electron beam lithography [5][45]. The investigated object has a disk radius of 60 nm, a disk height of 30 nm and a gap thickness of 10 nm. The metal disks consist of gold

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• proposed. It has been established that a maximum donor concentration of 8.7·1018 cm−3 in the GaAs spacer layer is reached at an evaporation temperature of 415 °С. At the same time, impurity accumulation in the growth direction was observed. We have shown that increasing the impurity doping of the GaAs

• temperature is given in Figure 2. The evaporator temperature was varied in the range of 300–415 °С (the marked area in Figure 2) in the experiment. Note that we doped the GaAs spacer layer, not the quantum dots. The temperature range was chosen to balance the rates of components in such a way that the SnTe

• donor level is less and an electron is captured more quickly at levels in an InAs quantum dot and participates in radiative recombination acts. This increases the photoluminescence peak intensity. Dark I–V measurements It is clear that doping of the spacer layer affects the charge carrier transport from

Highly compact refractive index sensor based on stripe waveguides for lab-on-a-chip sensing applications

• Chamanei Perera,
• Kristy Vernon,
• Elliot Cheng,
• Juna Sathian,
• Esa Jaatinen and
• Timothy Davis

Beilstein J. Nanotechnol. 2016, 7, 751–757, doi:10.3762/bjnano.7.66

• quantum dots (QDs) with emission wavelength at 655 nm (from Invitrogen Cat. No. Q21321MP). An optimum QD spacer layer thickness of 18 nm SiO2 was selected [23]. The sensor designs with separations between two outer arms of 300 nm (Figure 4a) and 200 nm (Figure 4b) were observed under QD luminescence. We

Linear and nonlinear optical properties of hybrid metallic–dielectric plasmonic nanoantennas

• Mario Hentschel,
• Bernd Metzger,
• Bastian Knabe,
• Karsten Buse and
• Harald Giessen

Beilstein J. Nanotechnol. 2016, 7, 111–120, doi:10.3762/bjnano.7.13

• achieve this goal. In all these cases, these techniques such as high-resolution electron beam lithography [78][79], self-assembled molecular monolayers [77], spacer layer engineering via atomic layer deposition [45], self-assembly of metallic nanoparticles with DNA and other molecular binding units [46

Mapping bound plasmon propagation on a nanoscale stripe waveguide using quantum dots: influence of spacer layer thickness

• Chamanei S. Perera,
• Alison M. Funston,
• Han-Hao Cheng and
• Kristy C. Vernon

Beilstein J. Nanotechnol. 2015, 6, 2046–2051, doi:10.3762/bjnano.6.208

• incoupling to the desired mode. A homogeneous thin layer of quantum dots was used to image the near field intensity of the propagating plasmons on the waveguide. We observed that the photoluminescence is quenched when the QD to metal surface distance is less than 10 nm. The optimised spacer layer thickness

• for the stripe waveguides was found to be around 20 nm. Authors believe that the findings of this paper prove beneficial for the development of plasmonic devices utilising stripe waveguides. Keywords: photoluminescence; plasmonics; quantum dot; spacer layer; stripe waveguide; Introduction Plasmons

• homogeneous QD layer (with a spacer layer of thickness 20 nm), we observed the bright luminescence around the waveguide rapidly decaying along the waveguide length (Figure 6b). If the frequency of the plasmons propagating on the stripe lies within the broad absorption band of the QDs, QDs in the immediate

Near-field effects and energy transfer in hybrid metal-oxide nanostructures

• Ulrich Herr,
• Barat Achinuq,
• Cahit Benel,
• Giorgos Papageorgiou,
• Manuel Goncalves,
• Johannes Boneberg,
• Paul Leiderer,
• Paul Ziemann,
• Peter Marek and
• Horst Hahn

Beilstein J. Nanotechnol. 2013, 4, 306–317, doi:10.3762/bjnano.4.34

•  22c and Figure 22d, whereas the circular regions in between appear darker. The results suggest that the quenching may be the dominant effect when no dielectric spacer layer is applied. Further investigations with varying thickness of the SiOx layer will be undertaken to clarify this phenomenon in

• fluorescent nanosuspension with narrow size distribution and similar optical properties. Quenching of the Eu fluorescence at the Ag nanoantennas has been observed by confocal microscopy of the fluorescent emission. The quenching can be reduced by deposition of a 10 nm thick SiOx spacer layer. In the systems

• containing this spacer layer, local enhancements of the fluorescence intensity at the nanoantenna positions can be observed. In summary, the results show the potential for nanophosphors as local probes for energy transfer in hybrid metal-oxide nanosystems. A quantitative measurement of the energy transfer

Diamond nanophotonics

• Katja Beha,
• Helmut Fedder,
• Marco Wolfer,
• Merle C. Becker,
• Petr Siyushev,
• Mohammad Jamali,
• Anton Batalov,
• Christopher Hinz,
• Jakob Hees,
• Lutz Kirste,
• Harald Obloh,
• Etienne Gheeraert,
• Boris Naydenov,
• Ingmar Jakobi,
• Florian Dolde,
• Sébastien Pezzagna,
• Daniel Twittchen,
• Matthew Markham,
• Daniel Dregely,
• Harald Giessen,
• Jan Meijer,
• Fedor Jelezko,
• Christoph E. Nebel,
• Rudolf Bratschitsch,
• Alfred Leitenstorfer and
• Jörg Wrachtrup

Beilstein J. Nanotechnol. 2012, 3, 895–908, doi:10.3762/bjnano.3.100

• nanodiamond solution and/or by varying the rotation speed of the spin-coater. The nanocrystals are embedded in a TiO2 spacer layer, i.e., a region of a high index of refraction. Therefore, a so-called “λ-cavity” is manufactured. In a third step, the top Bragg mirror is sputtered to create a planar cavity

• electron microscopy (SEM) image of a micropillar resonator with embedded diamond nanocrystals in the central spacer layer. (b) Transmission electron microscopy (TEM) image of diamond nanocrystals. The average size of the nanodiamonds is 20 nm. (c–e) Mode spectrum of a pillar microcavity (2.9 µm diameter

• ) with an ensemble of diamond nanocrystals in the spacer layer. (c) Simulated spatial cavity modes. (d) Spatio-spectrally resolved photoluminescence emission and (e) white-light transmission spectrum. Calculated spectral mode positions are indicated by vertical grey lines. (a) Normalized intensity