Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• °C, and 600 °C using RF sputtering. The thickness of the films has been found to decrease from 940 nm at room temperature to 200 nm at 600 °C with increasing substrate temperature. The structural investigation using grazing incidence angle X-ray diffraction revealed that films deposited at room

• crystallinity, high transmittance, and high conductivity of the ZnTe film produced at 600 °C make it a suitable candidate for use as a buffer layer in solar cell applications. Keywords: bandgap; physical properties; RF sputtering; substrate temperature; ZnTe; Introduction The industrialization and burning of

• physical and chemical methods such as molecular beam epitaxy [8], electron-beam evaporation [9], thermal evaporation [10], pulsed laser deposition (PLD) [11], and RF sputtering [12]. RF sputtering is a versatile technique because various process parameters such as RF power, deposition time, substrate

Heterogeneous reactions in a HFCVD reactor: simulation using a 2D model

• Xochitl Aleyda Morán Martínez,
• José Alberto Luna López,
• Zaira Jocelyn Hernández Simón,
• Gabriel Omar Mendoza Conde,
• José Álvaro David Hernández de Luz and
• Godofredo García Salgado

Beilstein J. Nanotechnol. 2024, 15, 1627–1638, doi:10.3762/bjnano.15.128

• by different CVD techniques, but also by sputtering and ion implantation, among others [4][5]. The key parameters are particular for each of these techniques. Hot filament chemical vapor deposition (HFCVD) is an excellent alternative for obtaining SRO films. It is also very versatile and economical

Ion-induced surface reactions and deposition from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Mohammed K. Abdel-Rahman,
• Patrick M. Eckhert,
• Atul Chaudhary,
• Johnathon M. Johnson,
• Jo-Chi Yu,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2024, 15, 1427–1439, doi:10.3762/bjnano.15.115

• ion irradiation these PtCl2 or PtBr2 species experience ion-induced sputtering. The difference between halogen and Pt sputter rates leads to a critical ion dose at which only Pt remains in the film. A comparison of the different ion/precursor combinations studied revealed that this sequence of

• elementary reaction steps is invariant, although the rates of CO desorption and subsequent physical sputtering were greatest for the heaviest (Ar+) ions. The ability of IBID to produce pure Pt films was confirmed by AES and XPS analysis of thin film deposits created by Ar+/Pt(CO)2Cl2, demonstrating the

• emission, and physical sputtering of adsorbed or substrate atoms [21][22][25][31][36][37][38][39][40]. Ion-induced deposition can occur via a momentum/energy transfer process [21][25][41][42] that results in the decomposition of the precursor to form volatile species and an involatile deposit containing

Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

• The-Long Phan,
• Le Viet Cuong,
• Vu Dinh Lam and
• Ngoc Toan Dang

Beilstein J. Nanotechnol. 2024, 15, 1390–1399, doi:10.3762/bjnano.15.112

• ], radio-frequency magnetron sputtering [47], pulsed laser ablation [48], and electrodeposition methods [49]. They have many application potentials in dye-sensitized solar cells [46], self-powered energy-harvesting devices [47], photocatalysts [48], and turbid lenses [50]. It has been suggested that the

The role of a tantalum interlayer in enhancing the properties of Fe₃O₄ thin films

• Hai Dang Ngo,
• Vo Doan Thanh Truong,
• Van Qui Le,
• Hoai Phuong Pham and
• Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

• promising applications. High-quality Fe3O4 thin films are a must to achieve the goals. In this report, Fe3O4 films on different substrates (SiO2/Si(100), MgO(100), and MgO/Ta/SiO2/Si(100)) were fabricated at room temperature with radio-frequency (RF) sputtering and annealed at 450 °C for 2 h. The

• sputtering; spintronic; Introduction Magnetite, also known as Fe3O4, has been extensively researched as one of the most common half-metallic materials in the field of spintronics for a considerable period of time. Magnetoelectronic devices are possible because of the material’s high Curie temperature of 860

• films [11][12][13]. The RF magnetron sputtering technique is extensively utilized because of its cost-effectiveness, simplicity, effectiveness, and capacity to produce Fe3O4 films with remarkable uniformity. The qualities of the films can be modified by manipulating parameters throughout the growth

A low-kiloelectronvolt focused ion beam strategy for processing low-thermal-conductance materials with nanoampere currents

• Annalena Wolff,
• Nico Klingner,
• William Thompson,
• Yinghong Zhou,
• Jinying Lin and
• Yin Xiao

Beilstein J. Nanotechnol. 2024, 15, 1197–1207, doi:10.3762/bjnano.15.97

• of energy loss to phonons and ionization and, therefore, heat is significantly (by a factor of six) lower for 5 keV ions than for 30 keV ion [17] as the incident ions have less initial energy to lose. The sputtering yield is reduced (by a factor of two) for 5 keV ions in comparison to 30 keV ions [17

• keV). By reducing the ion energy from 30 to 5 keV, the loss to heat can be reduced by a factor of six, while the sputtering speed is only reduced by a factor of two. The reduction in energy allows the operator to use nanoampere beam currents, which addresses the drawback of the previously reported

• program SRIM (Monte Carlo simulation) was used to determine the heat flux that 5 keV gallium ions (Ga+) induce in skin. 50000 ions were simulated for each incident ion energy. The methods “surface sputtering/monolayer collision steps” was selected as the calculation type. The plotting window size was

Local work function on graphene nanoribbons

• Daniel Rothhardt,
• Amina Kimouche,
• Tillmann Klamroth and
• Regina Hoffmann-Vogel

Beilstein J. Nanotechnol. 2024, 15, 1125–1131, doi:10.3762/bjnano.15.91

• -dependent measurements. Experimental The experiments were conducted in an Omicron VT-SFM system (base pressure 2 × 10−10 mbar). The Au(111) single crystal substrate (Mateck GmbH) was cleaned by repeated Ar ion sputtering–annealing cycles. The cleanliness of the samples was checked by SFM measurements. Then

• (f0 = 292 kHz, cL = 41 N/m) were used for imaging in the frequency modulation (FM) mode operated by a Nanonis electronic system. The tips were cleaned by sputtering (Ar pressure 5 × 10−3 Pa, energy 1 keV, 15 min) and annealing up to 375 K for 1–5 h (pressure below 1 × 10−7 Pa) prior to measurement

Effect of wavelength and liquid on formation of Ag, Au, Ag/Au nanoparticles via picosecond laser ablation and SERS-based detection of DMMP

• Sree Satya Bharati Moram,
• Chandu Byram and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1054–1069, doi:10.3762/bjnano.15.86

• synthesis in solution (LASiS), and sputtering [1]. The LASiS technique has been proven to be cost-effective in producing various shapes of NPs with distinct size distributions in a short time (a few minutes). It offers many advantages including high purity, minimal contamination, and precise control over NP

• distribution of NPs on a FP was analyzed using the INCA software with a field-emission scanning electron microscope (FESEM, Carl Zeiss Ultra 55). Samples were prepared by drop casting 10 µL of NPs onto a FP, followed by sputtering a thin conductive layer of gold onto the FP to facilitate lower magnification

Interface properties of nanostructured carbon-coated biological implants: an overview

• Mattia Bartoli,
• Francesca Cardano,
• Erik Piatti,
• Stefania Lettieri,
• Andrea Fin and
• Alberto Tagliaferro

Beilstein J. Nanotechnol. 2024, 15, 1041–1053, doi:10.3762/bjnano.15.85

• which the deposition occurs. During electron beam evaporation, an electron beam is used to vaporize the target material, while during sputtering, a high-energy ion beam is used to bombard the target. In both cases, atoms are ejected from the target and subsequently condense onto the substrate. The

Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

• Yasameen Al-Mafrachi,
• Sandeep Yadav,
• Sascha Preu,
• Jörg J. Schneider and
• Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

•  1c was defined by overlapping two tantalum-based growth stop strips (150 nm, sputtering) with a rectangular Fe layer (2 nm, e-beam) on the Si wafer. Only regions with direct Fe/AlOx contact were active for CNT growth. This combination allows for the definition of any shape, offering versatility for

Synthesis of silver–palladium Janus nanoparticles using co-sputtering of independent sources: experimental and theorical study

• Maria J. Martínez-Carreón,
• Francisco Solís-Pomar,
• Abel Fundora,
• Claudio D. Gutiérrez-Lazos,
• Sergio Mejía-Rosales,
• Hector N. Fernández-Escamilla,
• Jonathan Guerrero-Sánchez,
• Manuel F. Meléndrez and
• Eduardo Pérez-Tijerina

Beilstein J. Nanotechnol. 2024, 15, 808–816, doi:10.3762/bjnano.15.67

• sputtering Ag nanoparticles, only the second magnetron section working to confirm the sputtering of Pd nanoparticles, and both magnetrons working to obtain BNPs of the desired size. Figure 1 shows the nanoparticle size distribution for each experimental condition. The green color profile corresponds to the

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• literature. These encompass methods such as molecular beam epitaxy [17][18][19], direct current magnetron sputtering [4][20][21], and pulsed laser deposition [22][23][24]. Alternative approaches involve techniques such as chemical vapor deposition [25][26][27] and atomic layer deposition [28][29][30]. CuO

Level set simulation of focused ion beam sputtering of a multilayer substrate

• Alexander V. Rumyantsev,
• Nikolai I. Borgardt,
• Roman L. Volkov and
• Yuri A. Chaplygin

Beilstein J. Nanotechnol. 2024, 15, 733–742, doi:10.3762/bjnano.15.61

• understanding of the sputtering process, the distribution of oxygen atoms in the redeposited layer derived from the numerical data was compared with the corresponding elemental map acquired by energy-dispersive X-ray microanalysis. Keywords: electron microscopy; focused ion beam; level set simulation

• ; multilayer substrate; silicon; silicon dioxide; sputtering; Introduction The focused ion beam (FIB) technique is an effective method for surface nanostructuring. It is based on the local removal of material by sputtering with a narrow beam of, typically, gallium ions. This feature of the FIB method makes it

• , the desired properties are achieved by FIB processing of such substrates with different irradiation doses. A low-dose treatment is sufficient for cases that do not require sputtering of large amounts of material. Among such cases are the precise tuning of the magnetic characteristics of thin

Directed growth of quinacridone chains on the vicinal Ag(35 1 1) surface

• Niklas Humberg,
• Lukas Grönwoldt and
• Moritz Sokolowski

Beilstein J. Nanotechnol. 2024, 15, 556–568, doi:10.3762/bjnano.15.48

• from Pfeiffer Vacuum. The vicinal Ag(35 1 1) crystal was obtained from MaTecK and cleaned by repeated cycles of sputtering and subsequent annealing at 700 K for 45 min. We tested whether a variation of the annealing temperatures between 500 and 800 K has an influence on the step distribution of the

Superconducting spin valve effect in Co/Pb/Co heterostructures with insulating interlayers

• Andrey A. Kamashev,
• Nadir N. Garif’yanov,
• Aidar A. Validov,
• Vladislav Kataev,
• Alexander S. Osin,
• Yakov V. Fominov and
• Ilgiz A. Garifullin

Beilstein J. Nanotechnol. 2024, 15, 457–464, doi:10.3762/bjnano.15.41

• the magnetization of the Co1 layer. The layers were deposited using electron beam evaporation (Co, Pb) and AC sputtering (Si3N4). The deposition setup had a load-lock station with vacuum shutters, allowing one to transfer the sample holder without breaking the ultrahigh vacuum in the deposition

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• structures. Although these structures may not be visible to the naked eye, they certainly have a visible impact on the mentioned applications. Nanopatterning is a very delicate procedure that is only possible with special techniques such as ion beam sputtering (IBS), with which one can achieve nanostructures

• understood. Despite controlled fabrication of patterns has been achieved, details that influence the process of self-assembly still remain open. Ion beam sputtering is an important method for inducing topographical changes in specific materials. For silicon, self-organized dots, ripples, and cones have been

• to knock them out of the surfaces through an outwardly directed momentum. This process is known as sputtering [26], and the number of ejected atoms per ion is given by the sputtering yield, Y(θ). It is clearly visible that Y is a function of the incident angle θ, and it maximizes around θ ≈ 60°. Ion

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• sputtering for optoelectronic applications. A glancing angle of 87° is employed to grow films of different thicknesses, which are then exposed to post-growth annealing. Detailed local probe analyses in terms of morphology and work function of WOx films are carried out to investigate thickness-dependent

• structural, optical, and electrical properties of glancing angle-deposited NS-WOx thin films, where NS-WOx films of different thicknesses (6–60 nm) are prepared by rf sputtering and exposed to post-growth annealing at 673 K in vacuum (2 × 10−7 mbar). The role of increased oxygen vacancy concentration (OV) on

• thin films were deposited on ultrasonically cleaned p-Si (100) and soda lime glass substrates of 1 × 1 cm2 dimension using a rf magnetron sputtering setup (Excel Instruments). Trichloroethylene, propanol, acetone, and DI water were used to carry out ultrasonication of the substrates for removing

Ultrasensitive and ultrastretchable metal crack strain sensor based on helical polydimethylsiloxane

• Shangbi Chen,
• Dewen Liu,
• Weiwei Chen,
• Huajiang Chen,
• Jiawei Li and
• Jinfang Wang

Beilstein J. Nanotechnol. 2024, 15, 270–278, doi:10.3762/bjnano.15.25

• ion beam sputtering was obtained from Fuzhou Yingfei Xun Photoelectric Tech Co., Ltd, China; it possessed a density of 19.3 g·cm−3 and a conductivity of 4.52 × 107 S·m−1. Silver conductive adhesive, which was procured from Shenzhen Ausbond Co., LTD. (Guangdong, China), was employed to affix copper

• structured PDMS was initially cleansed through a 5 min Ar plasma sputtering and, subsequently, coated with a 10 nm thick Ti adhesion layer. After that, ion beam sputtering was utilized to deposit a 50 nm thick Au thin film onto the outer surface of the helically shaped PDMS. Then, a controlled pre-stretch

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• with 600 nm low-stress (<100 MPa) Si-N films. The sensor chips are 1.6 mm by 3.4 mm, about the size of a standard AFM cantilever chip. The steps are as follows: (a) Superconducting film. We first deposit a 15 nm thick thin film of superconducting Nb60Ti40N by reactive co-sputtering from separate

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• by ion beams, modeling ion implantation, lithography, and sputtering conditions. Structural changes in 2D DNA origami nanostructures deposited on Si are analyzed using AFM imaging. The observed effects on DNA origami include structure height decrease or increase upon fast heavy ion irradiation in

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• of 1.2 nm of Fe and 30 nm of Al on top; then, 60 nm of aluminum are deposited at an angle of 45°. Thus, we form a superconductor–normal metal (SN) Andreev contact. Subsequently, oxidation is carried out at a relatively high pressure (1–2 Torr) in the working chamber of the sputtering unit. The last

• based on high-temperature YBCO Josephson junctions [27][28][29]. Long junctions based on YBCO thin films were fabricated by the preliminary topology mask method [30][31]. Specifically, YBCO film was deposited on a 24° [001]-tilt Zr1−xYxO2 bicrystal substrate by magnetron sputtering with preliminary

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• magnetron sputtering through the resist aperture. We used DC magnetron sputtering in a pure Ar environment at a pressure of 1 Pa to deposit Py at room temperature. The effective permalloy target had a diameter of 8 mm. The sputtered material almost forms a parallel beam when it approaches the substrate at a

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

• Doan Nhat Giang,
• Nhat Minh Nguyen,
• Duc Anh Ngo,
• Thanh Trang Tran,
• Le Thai Duy,
• Cong Khanh Tran,
• Thi Thanh Van Tran,
• Phan Phuong Ha La and
• Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

• bonding between nanoparticles and nanorods. To fabricate the photodetector, CuO NPs/ZnO NRs were deposited on a glass substrate initially. Then, silver electrodes with a thickness of 100 nm were directly patterned on the glass substrate by a sputtering process using a shadow mask with 0.3 cm channel

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• from VG Scienta using a fixed pass energy of 200 eV. The sample was pre-cleaned by argon sputtering for 2 min with 4.0 keV acceleration energy to remove surface adsorbents and contaminations. The data were analysed using MATPLOTLIB [27][28] and LMFIT [29]. The XPS spectra were corrected using the