Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain

• Kalai Selvi Kanagarajan and
• Dhanalakshmi Krishnan Sadhasivan

Beilstein J. Nanotechnol. 2024, 15, 713–718, doi:10.3762/bjnano.15.59

• excellent improvement in TFETs, an on-current of 1.00 × 10−5 A/μm, an Ion/Ioff ratio of 7.14 × 1011, and a threshold voltage of 0.28 V. Keywords: dual low-work-function live strip (DLWLS); low-k dielectric spacer; low-work-function live strip (LWLS); Miller capacitance; molybdenum; subthreshold swing (SS

• device. The lifetime of devices is reduced because of leakage currents [1]. Leakage increases when thin SiO2 is used as gate dielectric material. The subthreshold swing (SS) is 60 mV/dec for the thermionic injection of electrons in field-effect transistors (FETs) [2]. In practical implementations, the SS

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• directions, are 0.38, 0.37, and 0.77 V, for the devices annealed at 300, 350, and 400 °C, respectively. The large hysteresis implies that the high-temperature treatment causes the deterioration of the front interface. Furthermore, the subthreshold swing (SS = dVGS/dlog10(IDS)) is calculated to be 369, 250

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• pA between the forward and reverse sweeps), subthreshold swing (SS = dVGS/dlog10(IDS)), and the maximum area density of state (Nt). Compared to a previous publication [25], the electrical properties of a-IGZO TFTs with various TIGZO exhibit the identical tendency. It is suggested that the devices

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

• Farhad Larki,
• Arash Dehzangi,
• Alam Abedini,
• Ahmad Makarimi Abdullah,
• Elias Saion,
• Sabar D. Hutagalung,
• Mohd N. Hamidon and
• Jumiah Hassan

Beilstein J. Nanotechnol. 2012, 3, 817–823, doi:10.3762/bjnano.3.91

• time causes an unavoidable scattering effect and subthreshold swing (SS) fluctuation. The latter case can justify new experiments with low doping concentration for JLTs. The fabrication of low-doped single-lateral-gate (SG) and double-lateral-gate junctionless transistors (DGJLT) by scanning probe