Retrieval of B1 phase from high-pressure B2 phase for CdO nanoparticles by electronic excitations in Cd_xZn_1−xO composite thin films

• Arkaprava Das,
• Marcin Zając and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2025, 16, 551–560, doi:10.3762/bjnano.16.43

• electronic system, and where TD is the Debye temperature and na is the atomic number density. All the calculated values used in the simulation code are mentioned in Table 2. Discussion for retrieval of the B1 phase with O ion irradiation The thermal annealing at temperatures exceeding 800 °C induces atomic

Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• . Rakhshani et al. [16] reported the impact of substrate temperature (35 and 305 °C), thermal annealing, and nitrogen doping on optoelectronic properties of ZnTe films and established an optimal doping concentration of nitrogen for lowering the resistivity of the grown films. Further, there are reports [17

Lithium niobate on insulator: an emerging nanophotonic crystal for optimized light control

• Midhun Murali,
• Amit Banerjee and
• Tanmoy Basu

Beilstein J. Nanotechnol. 2024, 15, 1415–1426, doi:10.3762/bjnano.15.114

• implantation, the wafer is bonded to a SiO2 (or TiO2) substrate using direct bonding techniques, which involves bringing the surfaces into close contact and applying pressure or heat to form a strong bond. The wafer is then subjected to thermal annealing, which activates the splitting process along the

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• and Technology, Wybrzeze Wyspiańskiego 27, 50–370 Wroclaw, Poland 10.3762/bjnano.15.62 Abstract This paper presents an investigation into the influence of repeating cycles of hydrothermal growth processes and rapid thermal annealing (HT+RTA) on the properties of CuO thin films. An innovative

• devices. Keywords: CuO; hydrothermal method; rapid thermal annealing; thin films; Introduction Copper(II) oxide is a p-type semiconductor possessing a narrow bandgap, along with many beneficial electrical, optical, and magnetic properties. Particularly at the nanoscale, these properties set themselves

• films, their properties were modified by thermal post-processing. The resultant procedure of sequential hydrothermal processes and rapid thermal annealing (HT+RTA) allows for the control of the physical properties of CuO films. Experimental Sample preparation The analyzed films were fabricated on n-type

Electron-induced deposition using Fe(CO)₄MA and Fe(CO)₅ – effect of MA ligand and process conditions

• Hannah Boeckers,
• Atul Chaudhary,
• Petra Martinović,
• Amy V. Walker,
• Lisa McElwee-White and
• Petra Swiderek

Beilstein J. Nanotechnol. 2024, 15, 500–516, doi:10.3762/bjnano.15.45

• . Considering, however, the low volatility of the MA ligand at 100 K and the absence of signals of MA in ESD (see section Electron-stimulated desorption from condensed Fe(CO)4MA), it is likely that the ligand either desorbs during thermal annealing after electron irradiation or is decomposed to smaller and more

Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• nanoparticles with a defective zinc blende structure under mild conditions through thermal annealing of hydrogenated silicon nanoparticles with red phosphorus. The synthesized Si3P4 nanoparticles were analyzed using FTIR, XRD, electron diffraction, EDX, TEM, Raman spectroscopy, X-ray fluorescence spectrometry

• inclusions in Si wafers implanted with P+ ions and laser-annealed at temperatures of 450–850 °C [2]. Recently, NPs of elemental compositions close to SiP and SiP2 have been observed in thermal annealing products of non-stoichiometric silicon oxide containing high amounts of phosphorus introduced during the

Humidity-dependent electrical performance of CuO nanowire networks studied by electrochemical impedance spectroscopy

• Jelena Kosmaca,
• Juris Katkevics,
• Jana Andzane,
• Raitis Sondors,
• Liga Jasulaneca,
• Raimonds Meija,
• Kiryl Niherysh,
• Yelyzaveta Rublova and
• Donats Erts

Beilstein J. Nanotechnol. 2023, 14, 683–691, doi:10.3762/bjnano.14.54

• nanowires synthesized by thermal annealing of copper are a p-type semiconductor material [9][12][14]; its majority charge carriers are positive holes (h+) related to the presence of Cu vacancies or impurities. Under dry conditions, possible ionosorption of oxygen species from air on the nanowire surface

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

• Feitao Li,
• Siyao Wan,
• Dong Wang and
• Peter Schaaf

Beilstein J. Nanotechnol. 2023, 14, 133–140, doi:10.3762/bjnano.14.14

• always deposited after the Ni layer to prevent the oxidation of the Ni layer. The bilayer thicknesses of different systems were 15 nm Au/5 nm Ni, 10 nm Au/10 nm Ni and 5 nm Au/15 nm Ni, and the thickness of each layer was controlled by a quartz balance during the deposition. Thermal annealing was carried

Zinc oxide nanostructures for fluorescence and Raman signal enhancement: a review

• Ioana Marica,
• Fran Nekvapil,
• Maria Ștefan,
• Cosmin Farcău and
• Alexandra Falamaș

Beilstein J. Nanotechnol. 2022, 13, 472–490, doi:10.3762/bjnano.13.40

• morphology for SERS measurements can be fabricated using various methods, including sol–gel synthesis [38], thermal deposition [31][32], chemical vapour deposition [42], or electrodeposition [35], which resulted in 1.2 μm high, vertically aligned nanorods of 60 nm diameter. It was observed that thermal

• annealing leads to ZnO NRs grown in the (002) direction and enhanced Raman signal. However, these types of NRs are not preferred for the growth of individual Au NPs used to further enhance the Raman signal, because the ZnO NRs tend to aggregate, which results in an inhomogeneous distribution of Au NPs on

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• structure of the prepared nanowires, unlike simple structures, enables further more extensive engineering of nanowire properties by specific technological steps (e.g., thermal annealing, etching, doping, and filling) in order to obtain, for example, catalytic nanowires with huge specific surface or hollow

Plasmon-enhanced photoluminescence from TiO₂ and TeO₂ thin films doped by Eu³⁺ for optoelectronic applications

• Marcin Łapiński,
• Jakub Czubek,
• Katarzyna Drozdowska,
• Anna Synak,
• Wojciech Sadowski and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2021, 12, 1271–1278, doi:10.3762/bjnano.12.94

• thermal annealing of the gold thin film. Thermal dewetting of gold film results in spherical gold nanostructures with average dimensions of 50 nm. Both, luminescent TiO2:Eu and TeO2:Eu films were deposited by RF magnetron sputtering from mosaic targets. The morphology of the gold nanostructures was

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

• Adem Koçyiğit,
• Adem Sarılmaz,
• Teoman Öztürk,
• Faruk Ozel and
• Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

• thermal annealing at 400 °C for 2 min in N2 atmosphere. Top contacts were prepared on the film by evaporating gold with a thickness of 150 nm at 5 × 10−6 Torr through a metal shadow mask (Au, 99.99% from Kurt J. Lesker). High-purity Al and Au metal contacts were thermally evaporated from a tungsten filament

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• ]. Here, neon line irradiation of an Si(25 nm)/SiO2(6.5 nm)/Si(bulk) stack was used to induce collisional mixing of silicon atoms into the buried SiO2 layer. Upon subsequent thermal annealing, 1D chains of silicon nanocrystals of 2.2 nm diameter self-assembled in the center of the SiO2 layer. A TEM-based

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• the thermal annealing. Annealing of 2.2 ML of thickness of Mn at 650 °C for 15 min produces both round islands, with a mean diameter of 139 nm (Figure 1a), and widespread milky and irregularly shaped regions. These regions contain few large islands on the border area surrounded by small islands. This

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• discussed in detail. Particle formation The surface of the deposited noble metal films has been analysed before and after the thermal annealing using a scanning electron microscope (SEM). The generated particles have been analysed using “ImageJ” [24] with the package collection “Fiji” [25]. For the analysis

• by an in situ micro quartz crystal sensor. The particle formation has been done by thermal annealing under vacuum conditions. The wafers with Cu and Pt have been annealed in vacuo, while the wafers with Au and Pd were annealed ex situ. Each annealing consists of a heating phase, 30 min of annealing

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• 200 °C [29]. Rapid thermal annealing of ITO/Ag/ITO films by Joeng et al. [28] led to an improvement in transmittance for films annealed at 300 °C. The lowest sheet resistance and resistivity values were obtained after annealing at 500 °C, but with reduced optical transmittance. Also, a durability test

Evolution of Ag nanostructures created from thin films: UV–vis absorption and its theoretical predictions

• Robert Kozioł,
• Marcin Łapiński,
• Paweł Syty,
• Damian Koszelow,
• Wojciech Sadowski,
• Józef E. Sienkiewicz and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2020, 11, 494–507, doi:10.3762/bjnano.11.40

• Narutowicza 11/12, 80-233 Gdansk, Poland 10.3762/bjnano.11.40 Abstract Ag-based plasmonic nanostructures were manufactured by thermal annealing of thin metallic films. Structure and morphology were studied using scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution

• . However, in the case of very simple production methods, as wet chemical synthesis or dewetting, the size of the nanoparticles follows a Gaussian distribution. This work focusses on Ag-based plasmonic platforms manufactured by thermal annealing of thin metallic films. The experimental results are

Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Lothar Weinhardt,
• Monika Blum,
• Clemens Heske,
• Wanli Yang,
• Ilona Oja Acik and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

• demonstrated that by adapting a two-step sequence, whereby amorphous Sb2S3 layers are first deposited by USP and then crystallized by thermal annealing, compact Sb2S3 thin films with uniform thickness can be fabricated [46]. Similarly, a two-step procedure to grow compact Sb2S3 thin films has become common

Design and facile synthesis of defect-rich C-MoS₂/rGO nanosheets for enhanced lithium–sulfur battery performance

• Chengxiang Tian,
• Juwei Wu,
• Zheng Ma,
• Bo Li,
• Pengcheng Li,
• Xiaotao Zu and
• Xia Xiang

Beilstein J. Nanotechnol. 2019, 10, 2251–2260, doi:10.3762/bjnano.10.217

• carbon and rGO followed by thermal annealing should be a very hopeful strategy to increase the performance of sulfur cathodes. In this work, we firstly present a double carbon network modification method for defect-rich MoS2 anodes by introducing amorphous carbon and rGO via a one-step hydrothermal

• 60 °C in vacuum. For comparison, the pristine MoS2 were synthesized using an identical process without GO or glucose. After that, the obtained composites were annealed at 400, 600 and 800 °C for 6 h in 10% H2/Ar atmosphere to improve the crystallinity. After thermal annealing, the samples were

Nontoxic pyrite iron sulfide nanocrystals as second electron acceptor in PTB7:PC₇₁BM-based organic photovoltaic cells

• Olivia Amargós-Reyes,
• José-Luis Maldonado,
• Omar Martínez-Alvarez,
• María-Elena Nicho,
• José Santos-Cruz,
• Juan Nicasio-Collazo,
• Irving Caballero-Quintana and
• Concepción Arenas-Arrocena

Beilstein J. Nanotechnol. 2019, 10, 2238–2250, doi:10.3762/bjnano.10.216

• were spin-coated onto ITO/PEDOT:PSS at 1900 rpm for 60 s at atmospheric conditions, and then the films were annealed at 80 °C for 15 min (active layer thickness ≈100 nm). A PFN layer (≈5–10 nm) was spin-coated at 6000 rpm on top of the active layer and exposed to thermal annealing for 15 min at 80 °C

Fabrication and characterization of Si_1−xGe_x nanocrystals in as-grown and annealed structures: a comparative study

• Muhammad Taha Sultan,
• Adrian Valentin Maraloiu,
• Ionel Stavarache,
• Jón Tómas Gudmundsson,
• Andrei Manolescu,
• Valentin Serban Teodorescu,
• Magdalena Lidia Ciurea and
• Halldór Gudfinnur Svavarsson

Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182

• impulse magnetron sputtering (HiPIMS). The as-grown structures subsequently underwent rapid thermal annealing (550–900 °C for 1 min) in N2 ambient atmosphere. The structures were investigated using X-ray diffraction, high-resolution transmission electron microscopy together with spectral photocurrent

• obtain NCs embedded in an oxide matrix is by thermal annealing of multilayer structures. Several oxide matrices have been studied already [12][13][14][15][16][17][18], of which SiO2 is the most extensively studied as it remains amorphous up to high temperatures and due to its compatibility with Si-based

• thermal annealing is carried out over earlier investigated structures [22], where the use of HiPIMS to obtain Si1−xGex NCs in as-grown samples is demonstrated. Upon rapid thermal annealing, periodically arranged columnar self-assembled SiGe NCs are obtained. The NCs are characterized using grazing

Growth dynamics and light scattering of gold nanoparticles in situ synthesized at high concentration in thin polymer films

• Corentin Guyot,
• Philippe Vandestrick,
• Ingrid Marenne,
• Olivier Deparis and
• Michel Voué

Beilstein J. Nanotechnol. 2019, 10, 1768–1777, doi:10.3762/bjnano.10.172

• inorganic film by, e.g., thermal annealing. Results: Simple laser reflection experiments showed that this growth process induced light scattering at the film/air interface. We report on this phenomenon, considering the growth dynamics of gold nanoparticles in a polymer film. The scattering of light was

• nanocomposites, which globally belong to two categories: the synthesis of NPs in a liquid medium, which provides good control during their growth, or the in situ synthesis of NPs, e.g., by thermal annealing of a noble metal-doped solid phase such as HAuCl4-doped polymer films. In the latter approach there is

• is another advantage of the in situ synthesis since it avoids the use of additional stabilizers such as citrate ions or sodium borohydride. The thermal annealing process allows for a reduction of the metal cations. Once in their neutral state, the metal atoms have to diffuse in the polymer matrix and

Kelvin probe force microscopy work function characterization of transition metal oxide crystals under ongoing reduction and oxidation

• Dominik Wrana,
• Karol Cieślik,
• Wojciech Belza,
• Christian Rodenbücher,
• Krzysztof Szot and
• Franciszek Krok

Beilstein J. Nanotechnol. 2019, 10, 1596–1607, doi:10.3762/bjnano.10.155

• band of SrTiO3(100) [31]. Consequently, a decrease of the WF is expected, as it was previously reported for 900 °C thermal annealing under UHV, where the WF of SrTiO3(100) yielded 3.478(64) eV [30]. Hence, here a high conductivity of the reduced SrTiO3(100) is measured and a work function of 3.12(18

High-temperature resistive gas sensors based on ZnO/SiC nanocomposites

• Vadim B. Platonov,
• Marina N. Rumyantseva,
• Alexander S. Frolov,
• Alexey D. Yapryntsev and
• Alexander M. Gaskov

Beilstein J. Nanotechnol. 2019, 10, 1537–1547, doi:10.3762/bjnano.10.151

• the components in a single homogeneous paste with subsequent thermal annealing. The composition and microstructure of the materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy