Recent progress on field-effect transistor-based biosensors: device perspective

• Billel Smaani,
• Fares Nafa,
• Mohamed Salah Benlatrech,
• Ismahan Mahdi,
• Hamza Akroum,
• Mohamed walid Azizi,
• Khaled Harrar and
• Sayan Kanungo

Beilstein J. Nanotechnol. 2024, 15, 977–994, doi:10.3762/bjnano.15.80

• tunnel field-effect transistor (TFET)-based biosensor with N+-pocket doping (PKD V TFET) has been proposed by Devi et al. [115] to enhance sensitivity in FET biosensors. This structure utilizes a 30% concentration of germanium in the Si/Ge N+ pocket and an N-type doping concentration of 1019 cm−3. In

Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain

• Kalai Selvi Kanagarajan and
• Dhanalakshmi Krishnan Sadhasivan

Beilstein J. Nanotechnol. 2024, 15, 713–718, doi:10.3762/bjnano.15.59

• research paper, a vertical tunnel field-effect transistor (TFET) structure containing a live metal strip and a material with low dielectric constant is designed, and its performance metrics are analyzed in detail. Low-k SiO2 is incorporated in the channel–drain region. A live molybdenum metal strip with

• ); tunnel field-effect transistor (TFET); Introduction Rapid miniaturization of electronic devices has led to an increase in leakage current. Leakage current is a big challenge in miniaturized circuits. Miniaturization, at the same time, increased the device performance and reduced the area occupied by the