Ion-induced surface reactions and deposition from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Mohammed K. Abdel-Rahman,
• Patrick M. Eckhert,
• Atul Chaudhary,
• Johnathon M. Johnson,
• Jo-Chi Yu,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2024, 15, 1427–1439, doi:10.3762/bjnano.15.115

• techniques, they do not require the use of organic solvents present in traditional lithography. Indeed, FEBID/FIBID can be considered as alternatives to commonly used methods such as chemical vapor deposition (CVD) and atomic layer deposition (ALD), particularly for area-selective, as opposed to conformal

Photocatalytic methane oxidation over a TiO₂/SiNWs p–n junction catalyst at room temperature

• Qui Thanh Hoai Ta,
• Luan Minh Nguyen,
• Ngoc Hoi Nguyen,
• Phan Khanh Thinh Nguyen and
• Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

• tools is extremely essential and important [37][38][39]. Herein, we constructed a robust p–n junction catalyst by atomic layer deposition (ALD) of TiO2 thin films on a p-type SiNW substrate for enhancing the photocatalytic efficiency in CH4 oxidation. Pristine p-Si wafers have limited surface area and

Water-assisted purification during electron beam-induced deposition of platinum and gold

• Cristiano Glessi,
• Fabian A. Polman and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 884–896, doi:10.3762/bjnano.15.73

• especially PtOx species, on SiOx substrates, as demonstrated during atomic layer deposition (ALD) experiments, although at elevated temperatures [58][59]. It has been postulated that the growth of Pt nanoparticles through ALD (using MeCpPtMe3 as the precursor molecule) is determined rather by the adsorption

Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

• Kristjan Kalam,
• Peeter Ritslaid,
• Tanel Käämbre,
• Aile Tamm and
• Kaupo Kukli

Beilstein J. Nanotechnol. 2023, 14, 1085–1092, doi:10.3762/bjnano.14.89

• Kristjan Kalam Peeter Ritslaid Tanel Kaambre Aile Tamm Kaupo Kukli Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia 10.3762/bjnano.14.89 Abstract Polycrystalline SnO2 thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) substrates from SnI4 and O3

• precursor combinations for obtaining SnO2 in atomic layer deposition (ALD) processes [9]. Two of these processes have employed SnI4 as the metal precursor with either O2 [10][11][12][13][14] or H2O2 [10][11][15] as oxidizer. Of these two oxygen sources, O2 would be more desirable because with it a hydrogen

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• , Clemens-Winkler-Str. 6c, 09116 Chemnitz, Germany FAP Forschungs- und Applikationslabor Plasmatechnik GmbH, Gostritzer Str. 67B, 01217 Dresden, Germany 10.3762/bjnano.14.78 Abstract In this work, we present the development of an atomic layer deposition (ALD) process for metallic cobalt. The process

• saturation behaviour of the process was investigated. X-ray photoelectron spectroscopy measurements could show that the deposited cobalt is in the metallic state. The finally established process in ALD mode shows a homogeneous coating at the wafer level. Keywords: atomic layer deposition (ALD); cobalt; low

• -temperature ALD; PEALD; plasma-enhanced ALD; XPS; Introduction The atomic layer deposition (ALD) of cobalt films is an ongoing topic of interest [1]. Cobalt thin and ultrathin films play an important role in current generations of integrated circuits [2]. Compared to copper, the metal offers a greater

Role of titanium and organic precursors in molecular layer deposition of “titanicone” hybrid materials

• Arbresha Muriqi and
• Michael Nolan

Beilstein J. Nanotechnol. 2022, 13, 1240–1255, doi:10.3762/bjnano.13.103

• (MLD) allows the deposition of these hybrid films using sequential, self-limiting reactions, similar to atomic layer deposition (ALD). In this paper, we use first principles density functional theory (DFT) to investigate the growth mechanism of titanium-containing hybrid organic–inorganic MLD films

• organic–inorganic hybrid films for applications in several technological application areas, including packaging/encapsulation, electronics, batteries and biomedical applications [1][2][3][4]. MLD is very similar to the widely used atomic layer deposition (ALD) technique, which involves the fabrication of

Design of surface nanostructures for chirality sensing based on quartz crystal microbalance

• Yinglin Ma,
• Xiangyun Xiao and
• Qingmin Ji

Beilstein J. Nanotechnol. 2022, 13, 1201–1219, doi:10.3762/bjnano.13.100

• (CH3)2}4] on SAMs of chiral molecules by using the atomic layer deposition (ALD) technique [120]. The specific selection effect was verified by QCM measurements using valine (Val) as the target analyte. The TiO2-SAMs films were shown to preferentially adsorb ᴅ-Val, suggesting a reliable chiral selector

Plasmon-enhanced photoluminescence from TiO₂ and TeO₂ thin films doped by Eu³⁺ for optoelectronic applications

• Marcin Łapiński,
• Jakub Czubek,
• Katarzyna Drozdowska,
• Anna Synak,
• Wojciech Sadowski and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2021, 12, 1271–1278, doi:10.3762/bjnano.12.94

• thicknesses in a range of 2 to 8 nm was deposited by atomic layer deposition (ALD) using a Beneq TFS 200 ALD system. This method provides precise control over the thickness with atomic accuracy. Trimethylaluminum (Sigma-Aldrich) and purified water were used as precursors. The deposition of the atomic layers

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• environmentally friendly solar cells are cells based on zinc oxide (ZnO). ZnO thin films can be obtained using many technologies, including molecular beam epitaxy, RF magnetron sputtering, pulsed laser deposition, chemical vapor deposition, and atomic layer deposition (ALD) [3]. ALD attracts the attention of many

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• ; gallium arsenide; photovoltaics; surface passivation; Introduction The atomic layer deposition (ALD) method is used for silicon passivation in photovoltaics. In recent years we proposed the usage of ALD for the construction of simplified Si-based cells [1]. Once zinc oxide (ZnO) nanorods were employed as

A review on the green and sustainable synthesis of silver nanoparticles and one-dimensional silver nanostructures

• Sina Kaabipour and
• Shohreh Hemmati

Beilstein J. Nanotechnol. 2021, 12, 102–136, doi:10.3762/bjnano.12.9

• deposition process. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) are among other chemical methods for nanoparticle synthesis. CVD is a method that allows production of nanoparticles on a substrate [241]. The process consists of three steps. First, the addition of a volatile precursor in

Atomic layer deposited films of Al₂O₃ on fluorine-doped tin oxide electrodes: stability and barrier properties

• Hana Krýsová,
• Michael Neumann-Spallart,
• Hana Tarábková,
• Pavel Janda,
• Ladislav Kavan and
• Josef Krýsa

Beilstein J. Nanotechnol. 2021, 12, 24–34, doi:10.3762/bjnano.12.2

• found up to 24 h and even after 168 h of exposure the changes in the blocking behaviour were still minimal. This behaviour was also observed for protection against direct reduction of FTO. Keywords: Al2O3; atomic layer deposition (ALD); barrier properties; corrosion; electrochemistry; FTO

• the topic of the present work, in which atomic layer deposition (ALD) is used as the coating technique [1]. This method is a gas-phase process which relies on a molecular approach. Therefore, a conformal coating, which reaches the pores and crevasses of the sample, can be obtained. Protective coating

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• layer deposition (ALD), one can assume that a wafer-level integration is feasible. Figure 2 shows the surface of a silicon die after 90 cycles of Ir ALD. In this deposition phase, small Ir particles are grown. The particles agglomerate and start to form a continuous film. However, there are still voids

• , which has to be fulfilled for a successful integration at the wafer level. Ir (after 45 ALD cycles) has agglomerated in small (less than 15 nm) particles, which are randomly distributed on the sample surface. Here, 16% of the surface is covered with Ir particles. As the deposition was done by atomic

Atomic layer deposition for efficient oxygen evolution reaction at Pt/Ir catalyst layers

• Stefanie Schlicht,
• Korcan Percin,
• Stefanie Kriescher,
• André Hofer,
• Claudia Weidlich,
• Matthias Wessling and
• Julien Bachmann

Beilstein J. Nanotechnol. 2020, 11, 952–959, doi:10.3762/bjnano.11.79

• of the salts followed by their thermal decomposition. In the alternative method, more academic in nature, atomic layer deposition (ALD) is applied to the felts after anodization. ALD allows for a controlled coating with ultralow noble-metal loadings in narrow pores. In acidic electrolyte, the ALD

• approach yields improved mass activity (557 A·g−1 as compared to 80 A·g−1 at 0.39 V overpotential) on the basis of the noble-metal loading, as well as improved stability. Keywords: atomic layer deposition (ALD); oxygen evolution reaction (OER); redox flow battery; vanadium–air redox flow battery (VARFB

• the Ti support and subsequent thermal decomposition to the corresponding elements [16][17][18]. As an academic method yielding better control of the electrode surface geometry, we perform an “anodization” of the Ti fibers to generate an ordered porous layer, followed by atomic layer deposition (ALD

Effect of Ag loading position on the photocatalytic performance of TiO₂ nanocolumn arrays

• Jinghan Xu,
• Yanqi Liu and
• Yan Zhao

Beilstein J. Nanotechnol. 2020, 11, 717–728, doi:10.3762/bjnano.11.59

• template (AAO) has constituted an important advance in the field of film preparation, since it allows the formation of nanostructured films with a high degree of morphology control [22]. Furthermore, according to Das et al. [23], the use of atomic layer deposition (ALD) for the preparation of TiO2 films

• solar energy harvesting in photovoltaic and photocatalytic applications owing to their extremely high visible-light absorption and tuned effective band gap. In this work, Ag-loaded TiO2 nanocolumn (Ag-TNC) arrays were fabricated based on anodic aluminum oxide (AAO) template by combining atomic layer

• deposition (ALD) and vacuum evaporation. The effects of the Ag loading position and deposition thickness, and the morphology, structure and composition of Ag-deposited TNC arrays on its optical and photocatalytic properties were studied. The Ag-filled TiO2 (AFT) nanocolumn arrays exhibited higher removal

DFT calculations of the structure and stability of copper clusters on MoS₂

• Cara-Lena Nies and
• Michael Nolan

Beilstein J. Nanotechnol. 2020, 11, 391–406, doi:10.3762/bjnano.11.30

• enable the use of 2D materials in technology applications, processes have been developed to grow 2D materials via chemical vapour deposition (CVD) [16][17] and atomic layer deposition (ALD) [18][19]. The films prepared via thin film deposition were comparable in performance to materials obtained via

Abrupt elastic-to-plastic transition in pentagonal nanowires under bending

• Sergei Vlassov,
• Magnus Mets,
• Boris Polyakov,
• Jianjun Bian,
• Leonid Dorogin and
• Vahur Zadin

Beilstein J. Nanotechnol. 2019, 10, 2468–2476, doi:10.3762/bjnano.10.237

• extreme surface-to-volume ratio. If surface nucleation is mitigated by, for example, external materials (coating), the onset of plastic yield can be significantly postponed. Hence, we performed a few preliminary tests on Ag NWs coated by atomic layer deposition (ALD) with a few-nm thick layer of alumina

Semitransparent Sb₂S₃ thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Lothar Weinhardt,
• Monika Blum,
• Clemens Heske,
• Wanli Yang,
• Ilona Oja Acik and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 2396–2409, doi:10.3762/bjnano.10.230

• employing an 87 nm thick Sb2S3 thin film absorber grown by atomic layer deposition (ALD) [18], whereas a PCE of 4.25% was reported when using Sb2S3 layers grown by CBD [21]. Unfortunately, the Sb2O3 impurity phase, which is considered detrimental to PV performance, unavoidably forms in the bulk of the Sb2S3

Facile synthesis of carbon nanotube-supported NiO//Fe₂O₃ for all-solid-state supercapacitors

• Shengming Zhang,
• Xuhui Wang,
• Yan Li,
• Xuemei Mu,
• Yaxiong Zhang,
• Jingwei Du,
• Guo Liu,
• Xiaohui Hua,
• Yingzhuo Sheng,
• Erqing Xie and
• Zhenxing Zhang

Beilstein J. Nanotechnol. 2019, 10, 1923–1932, doi:10.3762/bjnano.10.188

• . deposited iron oxide on CNTs by atomic layer deposition (ALD) and the obtained CNTs@Fe2O3 presented a specific capacitance of 580.6 F·g−1 at 5 A·g−1 [21]. Zhang et al. used magnetron sputtering to prepare sandwich-like CNT@Fe2O3@C structures, and the composite exhibited a specific capacitance of 787.5 F·g−1

Novel hollow titanium dioxide nanospheres with antimicrobial activity against resistant bacteria

• Carol López de Dicastillo,
• Cristian Patiño,
• María José Galotto,
• Yesseny Vásquez-Martínez,
• Claudia Torrent,
• Daniela Alburquenque,
• Alejandro Pereira and
• Juan Escrig

Beilstein J. Nanotechnol. 2019, 10, 1716–1725, doi:10.3762/bjnano.10.167

• [10][15]. In this work, the combination of electrospinning and atomic layer deposition (ALD) technologies are presented as an innovative strategy to develop titanium dioxide hollow nanospheres with controlled and homogeneous dimensions. Electrospinning is a technique able to produce different

Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films

• Ivan Kundrata,
• Karol Fröhlich,
• Lubomír Vančo,
• Matej Mičušík and
• Julien Bachmann

Beilstein J. Nanotechnol. 2019, 10, 1443–1451, doi:10.3762/bjnano.10.142

• addressed for more general applicability. To meet this challenge, the use of atomic layer deposition (ALD) has been proposed [2][3]. The inherent conformity of ALD indeed allows for thinner, conformal, pin-hole free films [4][5]. ALD has been instrumental in enabling the development of nanobatteries

• solid electrolytes. Physical vapour deposition and chemical vapour deposition can be used to deposit lithiated films. However, the issue of conformality on non-planar substrates with large surface area makes them impractical for nanobatteries the capacity of which scales with surface area. Atomic layer

• deposition (ALD) avoids these issues and is able to deposit conformal films on 3D substrates. However, ALD is limited in the range of chemical reactions, due to the required volatility of the precursors. Moreover, relatively high temperatures are necessary (above 100 °C), which can be detrimental to

On the transformation of “zincone”-like into porous ZnO thin films from sub-saturated plasma enhanced atomic layer deposition

• Alberto Perrotta,
• Julian Pilz,
• Stefan Pachmajer,
• Antonella Milella and
• Anna Maria Coclite

Beilstein J. Nanotechnol. 2019, 10, 746–759, doi:10.3762/bjnano.10.74

• crystal growth occurred, giving insights in the manufacturing of nanoporous ZnO from Zn-based hybrid materials. Keywords: calcination; PE-ALD; porosity; thin films; ZnO; Introduction Atomic layer deposition (ALD) and molecular layer deposition (MLD) are sequential self-limiting vapor-phase deposition

Biocompatible organic–inorganic hybrid materials based on nucleobases and titanium developed by molecular layer deposition

• Leva Momtazi,
• Henrik H. Sønsteby and
• Ola Nilsen

Beilstein J. Nanotechnol. 2019, 10, 399–411, doi:10.3762/bjnano.10.39

• .; Eidet, J. R. J. Biomed. Mater. Res., Part A 2018, 106, 3090–3098. doi:10.1002/jbm.a.36499]. The growth was followed by in situ quartz crystal microbalance (QCM) measurements and all systems exhibited atomic layer deposition (ALD) type of growth. The adenine system has an ALD temperature window between

• layer deposition (ALD) [17]. A coating produced by the ALD/MLD methods can render a non-biocompatible surface of an implant into a biocompatible material, allowing for the use of alternative materials as implants [18]. Moreover, ALD can provide specialized surface functionalities useful for biological

• enables control of cell–surface interactions, which plays a major role in controlling the bioactivity of solid surfaces. Biocompatibility can be enhanced by coating the surface using various thin film deposition techniques such as chemical vapor deposition (CVD), physical vapor deposition (PVD) or atomic

Uniform Sb₂S₃ optical coatings by chemical spray method

• Jako S. Eensalu,
• Atanas Katerski,
• Erki Kärber,
• Ilona Oja Acik,
• Arvo Mere and
• Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 198–210, doi:10.3762/bjnano.10.18

• chemical bath deposition (CBD) [3][4], spin coating [5], atomic layer deposition (ALD) [6] or chemical spray pyrolysis (CSP) [7] method, has been applied in extremely thin absorber (ETA) solar cells due to its excellent absorption coefficient in the visible light spectrum (1.8 × 105 cm−1 at 450 nm) [1][2

Electrostatic force microscopy for the accurate characterization of interphases in nanocomposites

• Diana El Khoury,
• Richard Arinero,
• Jean-Charles Laurentie,
• Mikhaël Bechelany,
• Michel Ramonda and
• Jérôme Castellon

Beilstein J. Nanotechnol. 2018, 9, 2999–3012, doi:10.3762/bjnano.9.279

• nm) were deposited or grown over the whole sample surface. Aluminum oxide (Al2O3) shells were prepared using the atomic layer deposition (ALD) method, polyvinyl acetate (PVAc) shells by spin coating, and silicon dioxide (SiO2) shells by plasma sputtering deposition (PSD). The signature of each

• [54]. Shells Alumina thin layers: atomic layer deposition (ALD). The ALD method was used to grow Al2O3 layers on the nanoparticles [55][56]. ALD is a thin film deposition technique where the film thickness is precisely controlled at the atomic level [57]. The deposition is based on sequential chemical