Green synthesis of carbon dot structures from Rheum Ribes and Schottky diode fabrication

• Muhammed Taha Durmus and
• Ebru Bozkurt

Beilstein J. Nanotechnol. 2024, 15, 1369–1375, doi:10.3762/bjnano.15.110

• were calculated as 566 nm and 5.25 eV, respectively. The ideality factor and the measured barrier height (Φb) of the CDs-based Schottky diode were calculated as 9.1 and 0.364 eV, respectively. The CDs were used as semiconductor material in a Schottky diode, and the diode exhibited rectification

• written as: where Φb is the effective barrier height, A is the device area, and A* is the Richardson constant (112 A·cm−2·K−2 for n-type Si [26]). Φb can be obtained from Equation 3. The value of n is calculated from the slope of semi-logarithmic I–V plots and is given as The ideality factor and the value

• of the measured barrier height Φb for the synthesized CDs were 9.1 and ca. 0.364 eV, respectively. Considering the CDs-based Schottky diode, it can be said that although its rectification property is good, it exhibits a non-ideal diode behavior with a high ideality factor [27]. Conclusion In this

Ultrasensitive and ultrastretchable metal crack strain sensor based on helical polydimethylsiloxane

• Shangbi Chen,
• Dewen Liu,
• Weiwei Chen,
• Huajiang Chen,
• Jiawei Li and
• Jinfang Wang

Beilstein J. Nanotechnol. 2024, 15, 270–278, doi:10.3762/bjnano.15.25

• strain, can be described by the following formula: When the strain ε is small, we can formulate: where X is the tunneling barrier height-dependent function. Figure 2b shows the good linearity between measured resistance and strain; the curves fit quite well to the analytical solution. When the helical

Approaching microwave photon sensitivity with Al Josephson junctions

• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Leonid S. Revin,
• Dmitry A. Ladeynov,
• Anton A. Yablokov and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 582–589, doi:10.3762/bjnano.13.50

• damping values [48][49]: The used notations are the following: i = Ibias/Ic is the dimensionless bias current with the bias current Ibias and the critical current Ic, is the potential barrier height, γ = IT/Ic is the noise intensity, and IT = 2ekT/ℏ is the fluctuational current which can be calculated as

• , the probability of switching due to the absorption of 3 photons is 0.002. In Figure 2b the barrier height is compared with the energy of one photon. The potential profile is calculated for the critical current of 8.586 μA. Photon frequency and energy are, respectively, 10 GHz and 6.8 × 10−24 J. The

• energies of three and even five photons are smaller than the barrier height. However, switching may still occur due to either resonant tunneling or resonant activation effects [22][39][40][49][51]. With the critical current of 8.586 μA, the barrier height for bias currents in the range of 7.5–8.08 μA

Morphology-driven gas sensing by fabricated fractals: A review

• Vishal Kamathe and
• Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

• heights across the film surface with few locations having a small barrier height depending upon fractal dimension and geometry. Such locations serve as sites with improved sensitivity and respond to the gas faster than other locations that have higher Schottky barrier heights. The gas sensing measurements

• were composed of many well aligned nanorods. The variations in potential barrier height at the contacts of the nanorods gave excellent gas sensing results towards hydrogen sulfide (H2S). The sensitivity response of the ZnO dendrite sensor at room temperature and the variation in sensitivity at

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

• Adem Koçyiğit,
• Adem Sarılmaz,
• Teoman Öztürk,
• Faruk Ozel and
• Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

• -Si. The interfacial layer might increase the barrier height between the Au and p-Si. Characterization XRD patterns of the thiospinel CuNiCoS4 nanocrystals were recorded with a Bruker D8 diffractometer, Cu Kα radiation (λ = 0.15418 nm). A FEI TALOS F200S tunneling electron microscope (TEM) was used to

• its good response to increasing illumination power densities [8]. The diode parameters, such as ideality factor (n), series resistance (Rs), and barrier height (ϕb), of the fabricated Au/CuNiCoS4/p-Si device provide information to understand electrical characteristics. These parameters can be

• following equation: and ϕb is obtained from the equation: The calculated n and ϕb values as functions of the illumination power density is displayed in Figure 5 and also listed below in Table 1. While the ideality factor value increased from 1.06 to 1.85, the barrier height value decreased from 0.81 to 0.57

Nickel nanoparticle-decorated reduced graphene oxide/WO₃ nanocomposite – a promising candidate for gas sensing

• Ilka Simon,
• Alexandr Savitsky,
• Rolf Mülhaupt,
• Vladimir Pankov and
• Christoph Janiak

Beilstein J. Nanotechnol. 2021, 12, 343–353, doi:10.3762/bjnano.12.28

• particles with a semiconductor. In accordance with the literature data, the role of nickel in increasing the sensory sensitivity is most likely associated with the spillover effect [60][61]. When interacting with a gas atom, the barrier height at the Ni/rGO interface decreases due to this effect (the

Absorption and photoconductivity spectra of amorphous multilayer structures

• Oxana Iaseniuc and
• Mihail Iovu

Beilstein J. Nanotechnol. 2020, 11, 1757–1763, doi:10.3762/bjnano.11.158

• applied field becomes higher than the internal electrical field. For amorphous semiconductors the barrier height of an Al–semiconductor contact, with a work function of φm = 4.18 eV, is φb = 0.40–0.75 eV [14][17]. This is very important from a practical point of view, because there is the possibility to

A self-powered, flexible ultra-thin Si/ZnO nanowire photodetector as full-spectrum optical sensor and pyroelectric nanogenerator

• Liang Chen,
• Jianqi Dong,
• Miao He and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1623–1630, doi:10.3762/bjnano.11.145

• -axis of the ZnO NWs (Figure 2, middle). Because the direction of the pyroelectric electric field (Epy) is the same as Eb and the barrier height decreases at the heterojunction interface due to the generation of a negative polarization potential, the total electric field in the depletion zone increases

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• the interface at this delivered dose. It may be expected that an increase in the Schottky barrier height will occur if the normally pinned Fermi level [42] is now a function of the physical state of the beam-altered metal–semiconductor interface. Ion beam pre-treatment of the contact region before

Microwave photon detection by an Al Josephson junction

• Leonid S. Revin,
• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Anton A. Yablokov,
• Igor V. Rakut,
• Victor O. Zbrozhek and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2020, 11, 960–965, doi:10.3762/bjnano.11.80

• the particle at rest in one well of the potential. The exit from this metastable state corresponds to the appearance of a finite voltage at the junction. In the case of low damping (but depending also on the barrier height and noise intensity), the particle, jumping over the barrier, gains enough

• decrease of the superconducting state lifetime. While it is difficult to calibrate the whole rf path due to uncertainties in the twisted-pair wiring and the loop antenna, one can make estimates, based on the comparison of the potential barrier height of the JJ at 23 nA bias current and IC = 28 nA (see the

• fit of the lifetime below). In this case, the potential barrier height is 1.3 × 10−24 J, while the photon energy at 9 GHz is 6 × 10−24 J. Thus, we are in the range where few-photon detection is possible. Results and Discussion In this section, we present preliminary results of the first measurements

Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

• Majid Sanaeepur

Beilstein J. Nanotechnol. 2020, 11, 688–694, doi:10.3762/bjnano.11.56

• illustrated in Figure 6a. Nevertheless, a CB defect in the right barrier lowers the conduction band edge and consequently the barrier height. Therefore, the transmission probabilities over the right barrier at all energies are increased compared to a defect-free RTD (red curve in Figure 6b). The NC defect in

Ion mobility and material transport on KBr in air as a function of the relative humidity

• Dominik J. Kirpal,
• Korbinian Pürckhauer,
• Alfred J. Weymouth and
• Franz J. Giessibl

Beilstein J. Nanotechnol. 2019, 10, 2084–2093, doi:10.3762/bjnano.10.203

• interatomic spacing of a: The number of atoms at the step edge Ne can be described by If material transport is confined to the edges, then (see Equation 5): with Eb,e being the energy barrier height at the step edge. This yields a solution of the form with , and explains the increased decay of the structure

Unipolar magnetic field pulses as an advantageous tool for ultrafast operations in superconducting Josephson “atoms”

• Daria V. Popolitova,
• Nikolay V. Klenov,
• Igor I. Soloviev,
• Sergey V. Bakurskiy and
• Olga V. Tikhonova

Beilstein J. Nanotechnol. 2019, 10, 1548–1558, doi:10.3762/bjnano.10.152

• elements are EJos, EJos and αEJos, α > 0.5. The third junction can be replaced by a superconducting quantum interferometer, which allows one to adjust α using an external magnetic flux. So, we can apply magnetic fluxes ΦX and ΦZ in order to control the barrier height and potential asymmetry respectively

Apparent tunneling barrier height and local work function of atomic arrays

• Neda Noei,
• Alexander Weismann and
• Richard Berndt

Beilstein J. Nanotechnol. 2018, 9, 3048–3052, doi:10.3762/bjnano.9.283

• Neda Noei Alexander Weismann Richard Berndt Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany 10.3762/bjnano.9.283 Abstract Spatially resolved measurements of the apparent tunneling barrier height Φapp in scanning tunneling microscopy

• filament and, consequently, on the local surface structure. Keywords: scanning tunneling microscopy; tunneling barrier height; work function; Findings The work function of a metal surface [1], the work required at temperature T = 0 K to move an electron from the metal to infinity, is relevant for, e.g

• apparent barrier height Φapp [27]. Although there is no simple expression connecting Φapp and the local work function of the sample Φ (partially because the tip structure is usually unknown), it is common practice to assume that measured variations of Φapp represent those of Φ [28][29][30][31]. Here we

Investigation of CVD graphene as-grown on Cu foil using simultaneous scanning tunneling/atomic force microscopy

• Majid Fazeli Jadidi,
• Umut Kamber,
• Oğuzhan Gürlü and
• H. Özgür Özer

Beilstein J. Nanotechnol. 2018, 9, 2953–2959, doi:10.3762/bjnano.9.274

• conduct simultaneous STM/AFM measurements. This system with a sensitivity of 2·10−4 Å/√Hz is capable of measuring tunnel current, force, force gradient, tunnel barrier height and energy loss [32]. The UHV chamber is equipped with an argon sputtering gun and a resistive heater that could be used for sample

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• with the effective penetration depth of the carrier (hole) wave function, lp, under triangular barrier. Taking into account that the energy gap in GaSb is Eg = 0.7 eV and the Schottky barrier height is about (1/3)Eg[21], the value of dbarrier can be estimated as 2 nm at Np = 1020 cm−3 while lp is of

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• -underlap. Schottky-potential barriers build up although the same Schottky-barrier-height at the metal–Si interface at drain and source were chosen in both devices to examine the effectiveness of “doping” (Si3N4-coating) of underlap areas. A shift of the Schottky-barrier for device II due to workfunction

Recent highlights in nanoscale and mesoscale friction

• Andrea Vanossi,
• Dirk Dietzel,
• Andre Schirmeisen,
• Ernst Meyer,
• Rémy Pawlak,
• Thilo Glatzel,
• Marcin Kisiel,
• Shigeki Kawai and
• Nicola Manini

Beilstein J. Nanotechnol. 2018, 9, 1995–2014, doi:10.3762/bjnano.9.190

• result of a modulation of the effective lateral energy barrier height by changing the distance between the contacting bodies. Since the resonance frequency of small nanometer-sized contacts is in the range from megahertz to gigahertz, the contact may move fast enough to cross the barrier during the short

Electromigrated electrical optical antennas for transducing electrons and photons at the nanoscale

• Arindam Dasgupta,
• Mickaël Buret,
• Nicolas Cazier,
• Marie-Maxime Mennemanteuil,
• Reinaldo Chacon,
• Kamal Hammani,
• Jean-Claude Weeber,
• Juan Arocas,
• Laurent Markey,
• Gérard Colas des Francs,
• Alexander Uskov,
• Igor Smetanin and
• Alexandre Bouhelier

Beilstein J. Nanotechnol. 2018, 9, 1964–1976, doi:10.3762/bjnano.9.187

• applied bias, the transport may be described by Simmons’ equation of tunneling electrons [40]: where , A and d are the effective area and width of the junction, m is the electron mass, and h is Planck’s constant. The average barrier height includes the presence of an image potential that reduces the

• barrier height. Considering that the work function of gold is ca. 5.4 eV, Equation 1 is usually valid for applied bias voltages up to a few volts. The shape of the tunneling characteristics of IT(Vdc) essentially depends on the parameters d and with minor corrections from the effective area A [41]. These

• generation of electro-optical antennas discussed here. It is interesting to display the characteristics of JT(Vdc) using the so-called Fowler–Nordheim representation to understand the physical meaning of the average barrier height , which is in the region considered in Figure 3b considerably lower than the

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

• Hichem Ferhati,
• Fayçal Djeffal and
• Toufik Bentrcia

Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177

• barrier height at the source–channel junction decreases and a higher tunneling current can be generated when the band alignment at the junction is satisfied. In addition, Figure 4 shows the complex subthreshold behavior. The Ge mole fraction induces a highly non-linear behavior of the swing factor as it

• = 0.3, which can be explained by the effect of the tunneling barrier height on the device subthreshold behavior. At a Ge mole fraction of 0.6, a good trade-off between derived current capability and subthreshold behavior is obtained, with an ION/IOFF ratio value of 115 dB and a swing factor value of 42

Intercalation of Si between MoS₂ layers

• Rik van Bremen,
• Qirong Yao,
• Soumya Banerjee,
• Deniz Cakir,
• Nuri Oncel and
• Harold J. W. Zandvliet

Beilstein J. Nanotechnol. 2017, 8, 1952–1960, doi:10.3762/bjnano.8.196

• apparent barrier height, and not on any large-scale height variations [44][45]. It should be pointed out here that spatial maps of dI/dz often exhibit a resolution that is similar to normal topographic STM images without, of course, the large-scale height variations [44]. The results shown in Figure 3 make

• clear two points. First, since height information is not present in a dI/dz map we have to conclude that the surface is smooth and continuous. Second, dI/dz provides information on the apparent barrier height, which is a material property. No contrast is visible and therefore we have to conclude that we

Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

• Filippo Giannazzo,
• Gabriele Fisichella,
• Aurora Piazza,
• Salvatore Di Franco,
• Giuseppe Greco,
• Simonpietro Agnello and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28

• power dissipation. From the analysis of the transfer characteristics (ID−VG) in the subthreshold regime, the Schottky barrier height (ΦB ≈ 0.18 eV) associated with the Ni/MoS2 contact was evaluated. The resulting contact resistance in the on-state (electron accumulation in the channel) was also

• Fermi level pinning close to the conduction band of MoS2 [5], resulting in a Schottky barrier height (SBH) for electrons typically ranging from 0.1 to 0.3 eV. The origin of this Fermi level pinning is currently a matter of investigation and a crucial role seems to be played by nanoscale defects

• subthreshold regime. In the following two sections, a detailed analysis of the characteristics in the subthreshold and above-threshold regime will be reported and the device electrical parameters will be extracted. In particular, the Ni/MoS2 Schottky barrier height and the flat band voltage (VFB) will be

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality

• factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying

• ) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of

Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

• Christoph Schreyvogel,
• Vladimir Polyakov,
• Sina Burk,
• Helmut Fedder,
• Andrej Denisenko,
• Felipe Fávaro de Oliveira,
• Ralf Wunderlich,
• Jan Meijer,
• Verena Zuerbig,
• Jörg Wrachtrup and
• Christoph E. Nebel

Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165

• the diamond surface using photolithography with subsequent thermal evaporation of the metals. Al is a Schottky contact showing a barrier height of 570 meV and Au is an Ohmic contact [18]. The contacts exhibit dimensions of 1 mm × 300 µm and were separated from each other by 400 µm. In order to have a

Filled and empty states of Zn-TPP films deposited on Fe(001)-p(1×1)O

• Gianlorenzo Bussetti,
• Alberto Calloni,
• Rossella Yivlialin,
• Andrea Picone,
• Federico Bottegoni and
• Marco Finazzi

Beilstein J. Nanotechnol. 2016, 7, 1527–1531, doi:10.3762/bjnano.7.146

• in tuning the barrier height [16]. With these interfaces, the sign of the dipole is deduced from the decreasing substrate work function and interpreted in terms of a (partial) electron transfer from the organic material to the Fe(001)-p(1×1)O surface [14]. In this picture, the direction of the dipole