Advanced atomic force microscopy techniques V

• Philipp Rahe,
• Ilko Bald,
• Nadine Hauptmann,
• Regina Hoffmann-Vogel,
• Harry Mönig and
• Michael Reichling

Beilstein J. Nanotechnol. 2025, 16, 54–56, doi:10.3762/bjnano.16.6

• al. present the application of AFM-based infrared nanospectroscopy to coated polymer surfaces [11]. The authors prepare thin films of SiOx on polypropylene surfaces by plasma-enhanced chemical vapor deposition (PE-CVD), which is commonly done to improve gas barrier properties of polypropylene. They

Heterogeneous reactions in a HFCVD reactor: simulation using a 2D model

• Xochitl Aleyda Morán Martínez,
• José Alberto Luna López,
• Zaira Jocelyn Hernández Simón,
• Gabriel Omar Mendoza Conde,
• José Álvaro David Hernández de Luz and
• Godofredo García Salgado

Beilstein J. Nanotechnol. 2024, 15, 1627–1638, doi:10.3762/bjnano.15.128

• 14 sur, Edif. IC5 y IC6. Puebla, Pue., 72507 México 10.3762/bjnano.15.128 Abstract In this study, a simulation of the elementary chemical reactions during SiOx film growth in a hot filament chemical vapor deposition (HFCVD) reactor was carried out using a 2D model. For the 2D simulation, the

• ; chemical reactions; flow dynamics; HFCVD; hot filament chemical vapor deposition; SiOx films; Introduction The growth of materials such as non-stoichiometric silicon oxide (SiOx) is an important step in semiconductor devices development. Control of deposition parameters determines the success of the

• by different CVD techniques, but also by sputtering and ion implantation, among others [4][5]. The key parameters are particular for each of these techniques. Hot filament chemical vapor deposition (HFCVD) is an excellent alternative for obtaining SRO films. It is also very versatile and economical

Ion-induced surface reactions and deposition from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Mohammed K. Abdel-Rahman,
• Patrick M. Eckhert,
• Atul Chaudhary,
• Johnathon M. Johnson,
• Jo-Chi Yu,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2024, 15, 1427–1439, doi:10.3762/bjnano.15.115

• techniques, they do not require the use of organic solvents present in traditional lithography. Indeed, FEBID/FIBID can be considered as alternatives to commonly used methods such as chemical vapor deposition (CVD) and atomic layer deposition (ALD), particularly for area-selective, as opposed to conformal

Direct electron beam writing of silver using a β-diketonate precursor: first insights

• Katja Höflich,
• Krzysztof Maćkosz,
• Chinmai S. Jureddy,
• Aleksei Tsarapkin and
• Ivo Utke

Beilstein J. Nanotechnol. 2024, 15, 1117–1124, doi:10.3762/bjnano.15.90

• . “Experimental” section) for focused electron beam-induced deposition (FEBID). (hfac)AgPMe3 is a white to light yellow solid, which was used before for chemical vapor deposition [32] and for growing silver nanoparticles by atomic layer deposition [33]. Like for other silver precursors, a pronounced halo and a

Interface properties of nanostructured carbon-coated biological implants: an overview

• Mattia Bartoli,
• Francesca Cardano,
• Erik Piatti,
• Stefania Lettieri,
• Andrea Fin and
• Alberto Tagliaferro

Beilstein J. Nanotechnol. 2024, 15, 1041–1053, doi:10.3762/bjnano.15.85

• defects, including passivation and vacancies [78]. Deposition methods for the synthesis of carbon coatings The addition of nanostructured and nanosized carbon species into materials for biological applications can be attained by several techniques such as chemical vapor deposition (CVD), physical vapor

Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

• Yasameen Al-Mafrachi,
• Sandeep Yadav,
• Sascha Preu,
• Jörg J. Schneider and
• Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

• thermistor region, can be fabricated in a single chemical vapor deposition process step. The thermistor resistance is mainly determined by the high junction resistances of the adjacent aligned CNTs. This configuration also provides low lateral thermal conductivity and a high temperature coefficient of

• nanoparticles at ≈750 °C. Finally, the samples were synthesized by water-assisted chemical vapor deposition (CVD) at 800 °C, similar to the CVD process presented in [13][14], to achieve a crystalline graphitic nature of the carbon nanotubes. Argon was used as the carrier gas and ethylene as the carbon source. A

Intermixing of MoS₂ and WS₂ photocatalysts toward methylene blue photodegradation

• Maryam Al Qaydi,
• Nitul S. Rajput,
• Michael Lejeune,
• Abdellatif Bouchalkha,
• Mimoun El Marssi,
• Steevy Cordette,
• Chaouki Kasmi and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2024, 15, 817–829, doi:10.3762/bjnano.15.68

• Arab Emirates 10.3762/bjnano.15.68 Abstract Visible-light-driven photocatalysis using layered materials has garnered increasing attention regarding the degradation of organic dyes. Herein, transition-metal dichalcogenides MoS2 and WS2 prepared by chemical vapor deposition as well as their intermixing

• . The observed flakes have typical shapes such as triangular, hexagonal, pentagonal, and other irregular polygonal shapes. The size of the flakes is within the range of 1 µm. The morphology and the shape of the flakes have common microstructures of MoS2/WS2 materials grown using chemical vapor

• deposition (CVD) as previously reported [32]. This means that the samples are well preserved after exfoliation through the intense sonication process. Certain flakes can be observed to have bent. The edges in some flakes can be seen to lose the smoothness, which could be a result of the harsh sonication

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• literature. These encompass methods such as molecular beam epitaxy [17][18][19], direct current magnetron sputtering [4][20][21], and pulsed laser deposition [22][23][24]. Alternative approaches involve techniques such as chemical vapor deposition [25][26][27] and atomic layer deposition [28][29][30]. CuO

AFM-IR investigation of thin PECVD SiO_x films on a polypropylene substrate in the surface-sensitive mode

• Hendrik Müller,
• Hartmut Stadler,
• Teresa de los Arcos,
• Adrian Keller and
• Guido Grundmeier

Beilstein J. Nanotechnol. 2024, 15, 603–611, doi:10.3762/bjnano.15.51

• /bjnano.15.51 Abstract Thin silicon oxide films deposited on a polypropylene substrate by plasma-enhanced chemical vapor deposition were investigated using atomic force microscopy-based infrared (AFM-IR) nanospectroscopy in contact and surface-sensitive mode. The focus of this work is the comparison of

• ]. In this study thin coatings of SiOx were deposited by plasma-enhanced chemical vapor deposition (PECVD) in an oxygen-rich plasma process with hexamethyldisiloxane (HMDSO) used as monomer. With this process, the thickness of the coating can be controlled and homogeneous films can be produced [15

Aero-ZnS prepared by physical vapor transport on three-dimensional networks of sacrificial ZnO microtetrapods

• Veaceslav Ursaki,
• Tudor Braniste,
• Victor Zalamai,
• Emil Rusu,
• Vladimir Ciobanu,
• Vadim Morari,
• Daniel Podgornii,
• Pier Carlo Ricci,
• Rainer Adelung and
• Ion Tiginyanu

Beilstein J. Nanotechnol. 2024, 15, 490–499, doi:10.3762/bjnano.15.44

• oxide nanotube networks, by atomic layer deposition [20]. Another aeromaterial, so called aerographite, has been produced by a one-step chemical vapor deposition process with a simultaneous and complete removal of the template material consisting of highly porous 3D networks built from interconnected

On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• transparent strain sensors. So far, the growth of specific grain boundaries in graphene has not been reported. Also, most research activities aim at the chemical vapor deposition (CVD) synthesis of monocrystalline graphene free of grain boundaries [10][11][12]. Methods to detect and visualize grain boundaries

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• injection pulsed-pressure chemical vapor deposition (DLI-PP-CVD). Such samples are constituted of nanoflakes (with a lateral size of typically 50 nm, i.e., well below the laser spot size), with possibly a distribution of thicknesses and twist angles between stacked layers. As an essential preliminary, we

• first reassess the applicability of different Raman criteria to determine the thicknesses (or layer number, N) of MoS2 flakes from measurements performed on reference samples, namely well-characterized mechanically exfoliated or standard chemical vapor deposition MoS2 large flakes deposited on 90 ± 6 nm

• , where atomic layers are arranged in such way that the stacking between two adjacent layers corresponds to a twist angle of θ = 60°, and any Mo atom is sitting on top of two S atoms of the adjacent layers [18][19]. However, during the synthesis process (e.g., chemical vapor deposition (CVD) synthesis) or

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• electron beam energy and current, the substrate material, the environment inside the deposition chamber, and the composition of the precursor [14][15][16][17]. Heretofore, various chemical vapor deposition (CVD) precursors have been applied for FEBID depositions. For gold nanostructures, these include, for

Fragmentation of metal(II) bis(acetylacetonate) complexes induced by slow electrons

• Janina Kopyra and
• Hassan Abdoul-Carime

Beilstein J. Nanotechnol. 2023, 14, 980–987, doi:10.3762/bjnano.14.81

• . Metal bis(acetylacetonate) complexes are of interest for many thin film fabrication techniques (e.g., chemical vapor deposition [9], atomic layer epitaxy [10], or atomic layer etching [11]) and as precursors for carbon materials, such as carbon nanotubes and carbon onion particles [12], or metal oxide

Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• Si3P4 phase. Also worth noting was that the synthesis of cubic Si3P4 NPs could be performed immediately after laser-induced or plasma-enhanced chemical vapor deposition of nanosilicon from the silane precursor (since the NPs obtained this way are readily hydrogenated). Additionally, there is preliminary

• (reagent grade) were used for sol preparation; 40% hydrofluoric acid (pure) was used for etching. Si NPs were synthesized by laser-induced chemical vapor deposition using a silane precursor (the average particle diameter was 20 nm [41]). The NPs oxidized when stored in air, and the resultant mass fraction

Control of morphology and crystallinity of CNTs in flame synthesis with one-dimensional reaction zone

• Muhammad Hilmi Ibrahim,
• Norikhwan Hamzah,
• Mohd Zamri Mohd Yusop,
• Ni Luh Wulan Septiani and
• Mohd Fairus Mohd Yasin

Beilstein J. Nanotechnol. 2023, 14, 741–750, doi:10.3762/bjnano.14.61

• . To date, many researchers have shown promising results on the synthesis control of CNTs to produce tailored CNT morphologies and properties through conventional furnace-based methods. Progress in CNT synthesis processes has been achieved mostly using chemical vapor deposition (CVD). Various studies

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• . Results and Discussion Fabrication of GaN/Ag substrates GaN/Ag substrates were fabricated by Ag deposition on nanostructured GaN platforms using PLD and MS (Figure 1). In the first step, metal organic chemical vapor deposition (MOCVD)-grown GaN on sapphire epitaxial layers was exposed to photoetching

A TiO₂@MWCNTs nanocomposite photoanode for solar-driven water splitting

• Anh Quynh Huu Le,
• Ngoc Nhu Thi Nguyen,
• Hai Duy Tran,
• Van-Huy Nguyen and
• Le-Hai Tran

Beilstein J. Nanotechnol. 2022, 13, 1520–1530, doi:10.3762/bjnano.13.125

• via chemical vapor deposition were supplied by Vinanotech (Vietnam). Titanium tetrachloride (purity >99%) was purchased from Sigma-Aldrich (USA), and pure potassium hydroxide and potassium chloride (purity >85%) were provided from Merck (Germany). All other chemical reagents used in this study were of

Studies of probe tip materials by atomic force microscopy: a review

• Ke Xu and
• Yuzhe Liu

Beilstein J. Nanotechnol. 2022, 13, 1256–1267, doi:10.3762/bjnano.13.104

• assembly methods, direct growth of carbon nanotubes by chemical vapor deposition (CVD) allows for increased bond strength between CNT tips and AFM probes. A pore growth method was used by Hafner et al. [42]. The method uses AFM imaging in contact mode to flatten the silicon tip, followed by hydrogen

• performs well. Clark et al. [45] presented a novel scanning probe for mechanical and electronic characterization of probe microscopy. A newly developed controlled area plating method was used. The method uses microwave plasma to enhance the growth of carbon nanotubes in chemical vapor deposition. This

DNA aptamer selection and construction of an aptasensor based on graphene FETs for Zika virus NS1 protein detection

• Nathalie B. F. Almeida,
• Thiago A. S. L. Sousa,
• Viviane C. F. Santos,
• Camila M. S. Lacerda,
• Thais G. Silva,
• Rafaella F. Q. Grenfell,
• Flavio Plentz and
• Antero S. R. Andrade

Beilstein J. Nanotechnol. 2022, 13, 873–881, doi:10.3762/bjnano.13.78

• characterization utilizing field-effect transistors fabricated using single-layer graphene grown by chemical vapor deposition (CVD) and transferred to Si/SiO2 substrates. The wafers were purchased from Graphene Platform and we produced graphene transistors by conventional photolithography, following the procedures

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• 4710-057, Portugal 10.3762/bjnano.13.70 Abstract Mass production and commercial adoption of graphene-based devices are held back by a few crucial technical challenges related to quality control. In the case of graphene produced by chemical vapor deposition, the transfer process represents a delicate

• devices and applications [1][2][3]. Among the production methods, chemical vapor deposition (CVD) made substantial progress over the years and now guarantees high-quality standards for the growth of batches of graphene samples over wafer-scale areas [4][5][6]. This progress allowed for the fabrication of

Reliable fabrication of transparent conducting films by cascade centrifugation and Langmuir–Blodgett deposition of electrochemically exfoliated graphene

• Teodora Vićentić,
• Stevan Andrić,
• Vladimir Rajić and
• Marko Spasenović

Beilstein J. Nanotechnol. 2022, 13, 666–674, doi:10.3762/bjnano.13.58

• delve into fundamental properties was augmented with an outlook towards potential applications [1]. Over the past decades, a great number of different methods for the synthesis of graphene and other 2D materials has been proposed, including micromechanical cleavage [2], chemical vapor deposition (CVD

Revealing local structural properties of an atomically thin MoSe₂ surface using optical microscopy

• Lin Pan,
• Peng Miao,
• Anke Horneber,
• Alfred J. Meixner,
• Pierre-Michel Adam and
• Dai Zhang

Beilstein J. Nanotechnol. 2022, 13, 572–581, doi:10.3762/bjnano.13.49

• characterization of CuPc molecules on MoSe2 flakes The MoSe2 flakes were received from SixCarbon Technology (Shenzhen), synthesized on a SiO2/Si substrate using chemical vapor deposition. An ultra-thin film of CuPc with a thickness of 5 nm is deposited on the MoSe2 samples by vacuum thermal deposition. At a

Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• vertically on the substrate. The vertically aligned MWCNTs were prepared by various methods, such as the constriction of CNT growth by nanoscale pockets and DC plasma-enhanced chemical vapor deposition (PECVD), as shown in Figure 2c. Using the vertically aligned CNT switches provides a high density for

Tin dioxide nanomaterial-based photocatalysts for nitrogen oxide oxidation: a review

• Viet Van Pham,
• Hong-Huy Tran,
• Thao Kim Truong and
• Thi Minh Cao

Beilstein J. Nanotechnol. 2022, 13, 96–113, doi:10.3762/bjnano.13.7

• materials, preferably using two redox sites; (3) synthesizing other morphologies of SnO2 such as nanorods, nanotubes, or 3D structures to increase the specific surface area of the catalyst; (4) upscaling the syntheses and using other synthesis approaches such as sol–gel or chemical vapor deposition to form