Insights into the electronic and atomic structures of cerium oxide-based ultrathin films and nanostructures using high-brilliance light sources

• Paola Luches and
• Federico Boscherini

Beilstein J. Nanotechnol. 2025, 16, 860–871, doi:10.3762/bjnano.16.65

• desorbed from the surface with the uptake of oxygen from cerium oxide [58]. The same method was used to investigate the same system also during exposure to water and to laser light at different temperatures [59]. Also in this case the Cu dopant ions were found to be active in modifying the electronic

Changes of structural, magnetic and spectroscopic properties of microencapsulated iron sucrose nanoparticles in saline

• Sabina Lewińska,
• Pavlo Aleshkevych,
• Roman Minikayev,
• Anna Bajorek,
• Mateusz Dulski,
• Krystian Prusik,
• Tomasz Wojciechowski and
• Anna Ślawska-Waniewska

Beilstein J. Nanotechnol. 2025, 16, 762–784, doi:10.3762/bjnano.16.59

Nanostructured materials characterized by scanning photoelectron spectromicroscopy

• Matteo Amati,
• Alexey S. Shkvarin,
• Alexander I. Merentsov,
• Alexander N. Titov,
• María Taeño,
• David Maestre,
• Sarah R. McKibbin,
• Zygmunt Milosz,
• Ana Cremades,
• Rainer Timm and
• Luca Gregoratti

Beilstein J. Nanotechnol. 2025, 16, 700–710, doi:10.3762/bjnano.16.54

• with trimethylindium and phosphine precursors. Axial p–n junctions were created by switching from diethylzinc to hydrogen sulfide as dopant precursors halfway during nanowire growth. More growth details can be found in references [18][30]. After growth, nanowires were mechanically transferred onto

The impact of tris(pentafluorophenyl)borane hole transport layer doping on interfacial charge extraction and recombination

• Konstantinos Bidinakis and
• Stefan A. L. Weber

Beilstein J. Nanotechnol. 2025, 16, 678–689, doi:10.3762/bjnano.16.52

• traditionally doped with the ionic p-dopant bis(trifluoromethane)sulfonimide lithium salt (LiTFSI) and 4-tertbutylpyridine (tBP). In the case of spiro-OMeTAD, in presence of oxygen, LiTFSI promotes its oxidation reaction by stabilizing its radical cation, resulting in the generation of mobile holes [30][31][32

• parameters, and KPFM procedure are reported in the Experimental Section. Results and Discussion Efficiency characterization Whilst BCF (Figure 1) has an advantageous impact on the conductivities of both spiro-OMeTAD and PTAA, when similar dopant concentrations are used, the effect on PTAA is more pronounced

• are smaller than those on the ETL side for devices 1 and 3, whereas the peaks of the HTL side shows a larger area than that of the ETL side for devices 2 and 4. This shows that, given that the ETLs remained the same, the BCF dopant had a beneficial effect on the rectifying properties of the HTL

Quantification of lead through rod-shaped silver-doped zinc oxide nanoparticles using an electrochemical approach

• Ravinder Lamba,
• Gaurav Bhanjana,
• Neeraj Dilbaghi,
• Vivek Gupta and
• Sandeep Kumar

Beilstein J. Nanotechnol. 2025, 16, 422–434, doi:10.3762/bjnano.16.33

• lattice. This implies that the Ag ion has filled the spaces between the atoms in the ZnO structure. Also, Ag functions as an amphiprotic dopant, meaning it can both donate and accept protons. It tends to occupy interstitial sites and also substitute for Zn [15][16]. Debye–Scherrer’s relation is used to

Emerging strategies in the sustainable removal of antibiotics using semiconductor-based photocatalysts

• Yunus Ahmed,
• Keya Rani Dutta,
• Parul Akhtar,
• Md. Arif Hossen,
• Md. Jahangir Alam,
• Obaid A. Alharbi,
• Hamad AlMohamadi and
• Abdul Wahab Mohammad

Beilstein J. Nanotechnol. 2025, 16, 264–285, doi:10.3762/bjnano.16.21

• –hole separation. The detailed mechanism of dopant ions in semiconductor materials is shown in Figure 4. Mechanisms of heterojunction photocatalysts Most semiconductor materials are susceptible to electron–hole recombination, which reduces photocatalytic efficacy. As a result, additional efforts must be

Preferential enrichment and extraction of laser-synthesized nanoparticles in organic phases

• Theo Fromme,
• Maximilian L. Spiekermann,
• Florian Lehmann,
• Stephan Barcikowski,
• Thomas Seidensticker and
• Sven Reichenberger

Beilstein J. Nanotechnol. 2025, 16, 254–263, doi:10.3762/bjnano.16.20

• liquid hydrocarbons such as pyrolysis products [15][16][17][18], polyynes [19][20][21], and dimers [13][22][23]. Furthermore, depending on the solvent and ablated material pairing, carbon may be “harvested” from the solvent forming crystalline carbides [24][25][26][27], amorphous carbon dopant [28][29

Mn-doped ZnO nanopowders prepared by sol–gel and microwave-assisted sol–gel methods and their photocatalytic properties

• Cristina Maria Vlăduț,
• Crina Anastasescu,
• Silviu Preda,
• Oana Catalina Mocioiu,
• Simona Petrescu,
• Jeanina Pandele-Cusu,
• Dana Culita,
• Veronica Bratan,
• Ioan Balint and
• Maria Zaharescu

Beilstein J. Nanotechnol. 2024, 15, 1283–1296, doi:10.3762/bjnano.15.104

• /mc space group. No other phases, including Mn-based compounds, were detected within the detection limits of the instrument, suggesting that the dopant has been incorporated into the zincite lattice. The patterns of the two samples, SG and MW, are very similar, with slightly more intense diffraction

• activity of the modified nanomaterials can be modulated by the dopant concentration. Figure 9 shows for both investigated samples a main emission peak at 420 nm and a smaller one at 480 nm. According to the literature data, both maxima correspond to the excitonic PL related to surface oxygen vacancies and

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• . The donor–acceptor mixture is dominant in the system. Therefore, the peaks of the QD dopant are not visible. At the same time, it should be noted that in mixtures with quantum dots (except QD480), the clarity of the peaks increases, which may suggest an increase in the degree of crystallinity

• establish absorption spectra and confirm excited states proven by luminescence. The dispersive spectra of the refractive index and extinction coefficient of nanoshell nanolayers and nanoshell:donor:acceptor composites were also determined. The dopant QDs shifted the extinction maximum toward longer

Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• phosphorus as a dopant. From the outset, phosphorus diffusion through hydrogenated and oxide layers was surmised to be different. In the case of similar previously performed syntheses of Si NPs with an oxide layer [21], phosphorus diffuses deep into the NP cores and distributes rather homogenously with a

Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives

• Mattia da Lisca,
• José Alvarez,
• James P. Connolly,
• Nicolas Vaissiere,
• Karim Mekhazni,
• Jean Decobert and
• Jean-Paul Kleider

Beilstein J. Nanotechnol. 2023, 14, 725–737, doi:10.3762/bjnano.14.59

• layer, respectively. Similarly, the tip starts to sense prematurely parts of the space charge inside the last InP:Zn layer. Furthermore, non-ideal abrupt junctions may contribute to this effect, for instance, because of dopant interdiffusion, as will be described in the following section. Finally, the

Metal-organic framework-based nanomaterials as opto-electrochemical sensors for the detection of antibiotics and hormones: A review

• Akeem Adeyemi Oladipo,
• Saba Derakhshan Oskouei and
• Mustafa Gazi

Beilstein J. Nanotechnol. 2023, 14, 631–673, doi:10.3762/bjnano.14.52

Plasmonic nanotechnology for photothermal applications – an evaluation

• A. R. Indhu,
• L. Keerthana and
• Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

Bismuth-based nanostructured photocatalysts for the remediation of antibiotics and organic dyes

• Akeem Adeyemi Oladipo and
• Faisal Suleiman Mustafa

Beilstein J. Nanotechnol. 2023, 14, 291–321, doi:10.3762/bjnano.14.26

• ]. The increased performance was caused by the following factors: (a) surface plasmon resonance caused by the Ag dopant; (b) a decrease in the rate at which photoinduced carriers recombined; (c) high Schottky barriers between the Ag dopant and the host material; and (d) an increase in the visible-light

• pure Bi2WO6 (82.8%), the dopant significantly increased the tetracycline-degrading activity, which reached 94.6% within 1 h of visible light irradiation. Additionally, Irfan et al. [148] used a bi-solvent sol–gel technique to synthesise porous bismuth ferrite nanostructures with various morphological

• account are the quantity and type of dopant. The photocatalytic performance may be impacted if the amount of dopant is greater than the optimum value because it may act as a recombination site for photoinduced charge carriers. Additionally, doping has some drawbacks such as thermal instability and carrier

High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• force spectroscopy; Introduction With the recent miniaturization of semiconductor devices, understanding the physical and electrical properties of semiconductor devices, such as the dopant concentration, dopant distribution, and defect level distribution, at the nanoscale has become important. Among

• have been performed on a variety of sample surfaces, including metals [9][10], semiconductors [11][12][13][14], and insulators [15][16][17]. When a semiconductor sample is measured by KPFM, the measured CPD is related to information about the semiconductor properties such as dopant density, surface

• states as follows: Here, we consider the charge Qs due to the surface potential Vs. In the case of an n-type semiconductor, the charge Qs as a function of the surface potential Vs is expressed as follows [23][24]: where ND is the dopant density, ni is the intrinsic carrier density, and ε is the

From a free electron gas to confined states: A mixed island of PTCDA and copper phthalocyanine on Ag(111)

• Alfred J. Weymouth,
• Emily Roche and
• Franz J. Giessibl

Beilstein J. Nanotechnol. 2022, 13, 1572–1577, doi:10.3762/bjnano.13.131

• low concentration as a dopant or at higher concentrations as a mixed layer [2]. Perylenetetracarboxylic dianhydride (PTCDA) is an organic molecule that has been investigated for its properties as an organic semiconductor and as a dye. It is straightforward to evaporate in vacuum and, at submonolayer

Recent advances in green carbon dots (2015–2022): synthesis, metal ion sensing, and biological applications

• Aisha Kanwal,
• Naheed Bibi,
• Sajjad Hyder,
• Arif Muhammad,
• Hao Ren,
• Jiangtao Liu and
• Zhongli Lei

Beilstein J. Nanotechnol. 2022, 13, 1068–1107, doi:10.3762/bjnano.13.93

• glutathione, as a dopant for both S and N, and a green source of celery leaves to synthesize CDs. Low-cost celery leaves containing folic acid with many –COOH and –NH2 groups contribute to high QYs. The reported CDs were novel fluorescent paper sensors and showed remarkable sensitivity and selectivity in the

• synthesize hydrophilic CDs [92]. Aqueous ammonia was used as a nitrogen dopant for many natural source materials such as Hylocereus undatus (H. undatus), Chionanthus retusus (C. retusus), Phyllanthus emblica (P. emblica), and Phyllanthus acidus (P. acidus) to obtain N-CDs [93][96]. A good QY up to 31.7% was

• obtained by using EDA as N-dopant with orange juice as carbon source to give N-CDs via hydrothermal decomposition [17]. Das et al. have adopted a new strategy using κ-carrageenan as the carbon source and lemon juice as the sulfur source. Surface quaternization was performed with benzalkonium chloride to

Theoretical investigations of oxygen vacancy effects in nickel-doped zirconia from ab initio XANES spectroscopy at the oxygen K-edge

• Dick Hartmann Douma,
• Lodvert Tchibota Poaty,
• Alessio Lamperti,
• Stéphane Kenmoe,
• Abdulrafiu Tunde Raji,
• Alberto Debernardi and
• Bernard M’Passi-Mabiala

Beilstein J. Nanotechnol. 2022, 13, 975–985, doi:10.3762/bjnano.13.85

• Nanotechnologies, Institut National de Recherche en Sciences Exactes et Naturelles (IRSEN), Brazzaville, Congo 10.3762/bjnano.13.85 Abstract In this study, we present theoretical X-ray absorption near-edge structure (XANES) spectra at the K-edge of oxygen in zirconia containing Ni dopant atoms and O vacancies at

• semiconducting or insulating materials doped randomly or uniformly with magnetic impurities in the oxide matrix. A typical example are thin films of uniformly Fe-doped ZrO2 where dopant concentrations, x, from the diluted regime (i.e., x = 1–5 atom % [2]) to very high concentrations (up to x ≈ 25 atom %) have

• photoelectron spectroscopy (XPS) [26], XANES spectra [27], and synchrotron radiation measurements [4], where it was suggested that for every two dopant atoms of Fe in zirconia, one single O vacancy is created. It is, thus, expected that in similarity to the effect of Fe doping in zirconia, substitutional Ni in

Ultrafast signatures of magnetic inhomogeneity in Pd_1−xFe_x (x ≤ 0.08) epitaxial thin films

• Andrey V. Petrov,
• Sergey I. Nikitin,
• Lenar R. Tagirov,
• Amir I. Gumarov,
• Igor V. Yanilkin and
• Roman V. Yusupov

Beilstein J. Nanotechnol. 2022, 13, 836–844, doi:10.3762/bjnano.13.74

• of the iron dopant leads to a development of a temperature dependence of ΔR/R(Δt) responses, both qualitative (the appearance of new relaxation components) and quantitative (changes in their amplitudes and time constants). While two decaying exponents are sufficient to describe the relaxation of the

A chemiresistive sensor array based on polyaniline nanocomposites and machine learning classification

• Jiri Kroutil,
• Alexandr Laposa,
• Ali Ahmad,
• Jan Voves,
• Vojtech Povolny,
• Ladislav Klimsa,
• Marina Davydova and
• Miroslav Husak

Beilstein J. Nanotechnol. 2022, 13, 411–423, doi:10.3762/bjnano.13.34

• concentration due to PANI doping and the formation of charge transfer complexes [20]. The decrease of electrical resistance is caused by the greater mobility of the dopant ions, related to the development of PANI chains. Furthermore, the swelling effect contributes to the change in resistivity [21]. Statistical

Measurement of polarization effects in dual-phase ceria-based oxygen permeation membranes using Kelvin probe force microscopy

• Kerstin Neuhaus,
• Christina Schmidt,
• Liudmila Fischer,
• Wilhelm Albert Meulenberg,
• Ke Ran,
• Joachim Mayer and
• Stefan Baumann

Beilstein J. Nanotechnol. 2021, 12, 1380–1391, doi:10.3762/bjnano.12.102

• time dependence was shown to vary with dopant concentration (e.g., abundance of oxygen vacancies in ceria) and also depends on the ratio of grain boundary/grain bulk [22][23][24][25]. Single ceria grains in a mixed ion/electron-conductive composite have so far not been addressed by AFM-based

Plasmon-enhanced photoluminescence from TiO₂ and TeO₂ thin films doped by Eu³⁺ for optoelectronic applications

• Marcin Łapiński,
• Jakub Czubek,
• Katarzyna Drozdowska,
• Anna Synak,
• Wojciech Sadowski and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2021, 12, 1271–1278, doi:10.3762/bjnano.12.94

• literature [31][32]. The Eu3+ doublet is characterized by greater intensity and dominates over the Eu2+ lines. For quantitative analysis, integral intensities of europium doublets were compared. The Eu3+/Eu2+ ratio was ca. 90%:10%. Total amount of dopant in a sample was calculated to ca. 5%, on the basis of

• survey spectra. The amount of luminescent dopant in both titanium dioxide and tellurium dioxide matrixes should be sufficient to observe luminescence from the thin films. According to literature, percentage of luminescent ions in the host material should not exceed 10%. Otherwise, emission quenching may

Nickel nanoparticle-decorated reduced graphene oxide/WO₃ nanocomposite – a promising candidate for gas sensing

• Ilka Simon,
• Alexandr Savitsky,
• Rolf Mülhaupt,
• Vladimir Pankov and
• Christoph Janiak

Beilstein J. Nanotechnol. 2021, 12, 343–353, doi:10.3762/bjnano.12.28

• supported on reduced graphene oxide paves the way for their application as dopant in other metal oxide gas sensors. Experimental Due to the sensitivity of the precursor substances towards moisture and oxidation, all experiments were carried out in a purified argon (grade 99.998 vol %) or nitrogen (grade

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• , determined by our analytic procedure [32], as a function of VDC for both n- and p-type semiconductor materials. Using the complete metal–oxide–semiconductor equations, the Poisson–Boltzmann equation is solved for various active dopant concentration values ranging from 1015 to 1019 atoms·cm−3. In the sMIM

• fact, as expected, the amplitude of the measured local capacitance variation (∂C/∂V amplitude) increases when the doping level decreases. This behaviour allows for the localization of the P/N and I/N semiconductor junctions. As a result, the ∂C/∂V data allows for the discrimination among the dopant

• a comprehensive analysis of the overall architecture of the device for both FEOL and BEOL layers. It is important to emphasize that this result shows that, in complement to other AFM-based nanoscale electrical modes and to the local dopant density information, data regarding the BEOL layers is also

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• speculated a variety of origins for this defect, including a negatively charged As dopant [58], Si-vacancy hydrogen complexes [9], and B dopants [59][60]. Crystal vacancies have previously been identified in other materials using scanning probe microscopy including Ga vacancies in GaAs [61], As vacancies in