Heterostuctures of 4-(chloromethyl)phenyltrichlorosilane and 5,10,15,20-tetra(4-pyridyl)-21H,23H-porphine prepared on Si(111) using particle lithography: Nanoscale characterization of the main steps of nanopatterning

• Phillip C. Chambers and
• Jayne C. Garno

Beilstein J. Nanotechnol. 2018, 9, 1211–1219, doi:10.3762/bjnano.9.112

• porphyrins and organosilanes. A protocol was developed with particle lithography using steps of immersion in organosilane solutions to selectively passivate the surface of Si(111) with octadecyltrichlorosilane (OTS). A methyl-terminated matrix was chosen to direct the growth of CMPS nanostructures to fill

• the uncovered sites of Si(111) to enable spatial confinement of the surface reaction. Silica spheres with a diameter of 500 nm were used as a surface mask to prepare nanoscopic holes within the OTS matrix film. Next, the samples were immersed in solutions of CMPS dissolved in toluene or bicyclohexane

• OTS on Si(111) Particle lithography with an immersion step was used to prepare nanoholes within a film of OTS. A topographic view of the nanoholes is shown in Figure 2a, with the simultaneously acquired phase image (Figure 2b).The ex situ images were acquired with tapping-mode AFM in air. The

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• , Institut d’Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud, University Paris-Saclay, 91405 Orsay cedex, France 10.3762/bjnano.9.17 Abstract In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a

• ]. The fabrication of a simple SC based on GaN NWs on Si(111) can be obtained via proper NW doping and formation of a p–n junction at Si substrate–GaN NW interface. Recently it has been theoretically demonstrated that optimization of the doping level and NW array morphology can lead to a power conversion

• ) formation of a GaN shell over the NW template (e.g., ZnO) followed by the template NW removal [14]; 3) selective area molecular beam epitaxy (MBE) growth of GaN on sapphire (111) substrates over titanium mask [15]; and 4) MBE deposition of GaN on Si(111) substrates covered by a silicon oxide layer in the

Response under low-energy electron irradiation of a thin film of a potential copper precursor for focused electron beam induced deposition (FEBID)

• Leo Sala,
• Iwona B. Szymańska,
• Céline Dablemont,
• Anne Lafosse and
• Lionel Amiaud

Beilstein J. Nanotechnol. 2018, 9, 57–65, doi:10.3762/bjnano.9.8

• , and deposited on Si(111). The dip-coating parameters were the following: the withdraw rate was 80 mm/min, the immersion rate was 80 mm/min, the immersion time was 20 s, and the coating count was 10. ATR-IR spectra were recorded with a PerkinElmer spectrum two instrument, equipped with a single

Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation

• Alberto Curcella,
• Romain Bernard,
• Yves Borensztein,
• Silvia Pandolfi and
• Geoffroy Prévot

Beilstein J. Nanotechnol. 2018, 9, 48–56, doi:10.3762/bjnano.9.7

• honeycomb-chained triangle (HCT) reconstruction observed on a Ag/Si(111) surface, it has been hypothesized that the observed films could result from the growth of diamond-like Si with Ag acting as a surfactant [28]. Such conclusions were also supported by low energy electron diffraction (LEED) [29][30

• Auger intensity. This is done by assuming either a surface termination for the silicon film similar to the Ag-induced (√3 × √3)R30° Si(111) reconstruction, or a pure Si termination. The Auger intensities have been computed using effective attenuation lengths [39] (EAL) for electrons, that have been

• contrary, growth at intermediate temperatures results in a Ag surfactant mediated Si growth. A good agreement with AES, LEED, and STM measurements is obtained by considering that the Si islands film is terminated by the Ag/Si(111) (√3 × √3)R30° reconstruction. As temperature increases, thicker Si islands

A robust AFM-based method for locally measuring the elasticity of samples

• Alexandre Bubendorf,
• Stefan Walheim,
• Thomas Schimmel and
• Ernst Meyer

Beilstein J. Nanotechnol. 2018, 9, 1–10, doi:10.3762/bjnano.9.1

• soft FDTS-coating of the tip is sensed (see also Figure 8). The effect of collecting Teflon-like molecules with AFM tips has been known for a long time. It has been successfully used for the topographic imaging of the Si(111) surface with atomic resolution. Howald et al. [27] studied the Si(111) 7 × 7

• reconstruction in UHV by contact force microscopy. They observed adhesive forces of up to 103 nN between the Si tip and the Si(111) surface. By coating the tip with PTFE (Teflon), they could reduce the sticking forces to 10 nN. A short scan on a PTFE sample led to a reliable coating of the tip for the subsequent

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• grown by molecular beam epitaxy (MBE) on GaAs(111)B and Si(111) substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i) a lower influence of the polytypic nature of

• the GaAs nanowires on their electronic structure; ii) a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111); iii) the occurrence of a higher WZ phase fraction, in particular for growth on Si(111); iv) an increase of the activation energy to release

• the less bound carrier in the radiative state from nanowires grown on GaAs(111)B; and v) a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111). Back-gate field effect transistors were fabricated with individual nanowires

Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications

• Chin-Yi Tsai,
• Jyong-Di Lai,
• Shih-Wei Feng,
• Chien-Jung Huang,
• Chien-Hsun Chen,
• Fann-Wei Yang,
• Hsiang-Chen Wang and
• Li-Wei Tu

Beilstein J. Nanotechnol. 2017, 8, 1939–1945, doi:10.3762/bjnano.8.194

• and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.C 10.3762/bjnano.8.194 Abstract In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition

• (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO

• (002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100) substrate is slightly larger than that on the planar Si(111) substrate

Structural model of silicene-like nanoribbons on a Pb-reconstructed Si(111) surface

• Agnieszka Stępniak-Dybala and
• Mariusz Krawiec

Beilstein J. Nanotechnol. 2017, 8, 1836–1843, doi:10.3762/bjnano.8.185

• Agnieszka Stepniak-Dybala Mariusz Krawiec Institute of Physics, M. Curie-Skłodowska University, Pl. M. Curie-Skłodowskiej 1, 20-031 Lublin, Poland 10.3762/bjnano.8.185 Abstract A structural model of the recently observed silicene-like nanoribbons on a Pb-induced √3 × √3 reconstructed Si(111

• ) surface is proposed. The model, which is based on first principles density functional theory calculations, features a deformed honeycomb structure directly bonded to the Si(111) surface underneath. Pb atoms stabilize the nanoribbons, as they passivate the uncovered substrate, thus lower the surface energy

• substrate because the results of the DFT calculations of [45][46] were very promising in view of silicene formation. We started from the thinnest Pb substrates, which are and reconstructions of Pb on Si(111). Our STM studies on the Pb-reconstructed Si(111) surface revealed that deposited Si atoms form

(Metallo)porphyrins for potential materials science applications

• Lars Smykalla,
• Carola Mende,
• Michael Fronk,
• Pablo F. Siles,
• Michael Hietschold,
• Georgeta Salvan,
• Dietrich R. T. Zahn,
• Oliver G. Schmidt,
• Tobias Rüffer and
• Heinrich Lang

Beilstein J. Nanotechnol. 2017, 8, 1786–1800, doi:10.3762/bjnano.8.180

• by –NMe2 groups as described in [60]. However, the lower molecular weight and the potentially different intermolecular interactions did not enable the deposition of the –NMe2-terminated (metallo)porphyrins. As substrates Si(111) wafers covered with a native oxide layer (2 nm) and silicon pieces

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

• Massimiliano Lucci,
• Ivano Ottaviani,
• Matteo Cirillo,
• Fabio De Matteis,
• Roberto Francini,
• Vittorio Merlo and
• Ivan Davoli

Beilstein J. Nanotechnol. 2017, 8, 539–546, doi:10.3762/bjnano.8.58

• this work were grown on Si(111) substrates covered by 1 μm of amorphous, artificially grown oxide. Following common recipes reported in literature the target–substrate distance is about 10 cm and the substrate temperature, measured by a thermocouple, is kept below 50 °C during the NbN film growth

Ordering of Zn-centered porphyrin and phthalocyanine on TiO₂(011): STM studies

• Piotr Olszowski,
• Lukasz Zajac,
• Szymon Godlewski,
• Bartosz Such,
• Rémy Pawlak,
• Antoine Hinaut,
• Res Jöhr,
• Thilo Glatzel,
• Ernst Meyer and
• Marek Szymonski

Beilstein J. Nanotechnol. 2017, 8, 99–107, doi:10.3762/bjnano.8.11

• B-passivated Si(111) substrates [25]. Results and Discussion ZnPc adsorption and ordering Figure 1 presents the constant current STM images of ZnPc molecules deposited at room temperature on the (2×1) reconstructed (011) face of rutile. At low coverage (≤1 ML, Figure 1, left panel), it is clear that

• thermal annealing conditions. Finally, we would like to note that our findings are not in any conflict with the recent report on the growth and ordering of metal phthalocyanine on B-passivated Si(111) surfaces [25]. Although it was indicated in that work that the central metal atom may play a significant

• role, the mechanism involved in such an interaction was concerned with the specific p–d orbital coupling between the localized Si substrate pz states on the B-passivated Si(111) surface and the metal atom at the center of the flat laying phthalocyanine molecule. This type of mechanism is not applicable

Noncontact atomic force microscopy III

• Mehmet Z. Baykara and
• Udo D. Schwarz

Beilstein J. Nanotechnol. 2016, 7, 946–947, doi:10.3762/bjnano.7.86

• resonators for NC-AFM operation in air. In addition, the ever increasing importance of simulations for dynamic AFM experiments is underlined via two contributions focusing on three-dimensional viscoelastic modeling as well as “sub-atomic” contrast formation on the prototypical Si(111)-7×7 surface. To

Modelling of ‘sub-atomic’ contrast resulting from back-bonding on Si(111)-7×7

• Adam Sweetman,
• Samuel P. Jarvis and
• Mohammad A. Rashid

Beilstein J. Nanotechnol. 2016, 7, 937–945, doi:10.3762/bjnano.7.85

• Adam Sweetman Samuel P. Jarvis Mohammad A. Rashid The School of Physics and Astronomy, The University of Nottingham, Nottingham, NG7 2RD, United Kingdom 10.3762/bjnano.7.85 Abstract It has recently been shown that ‘sub-atomic’ contrast can be observed during NC-AFM imaging of the Si(111)-7×7

• detailed explanation for ‘sub-atomic’ contrast observed on Si(111)-7×7 using a simple model based on Lennard-Jones potentials, coupled with a flexible tip, as proposed by Hapala et al. [Phys. Rev. B 2014, 90, 085421] in the context of interpreting sub-molecular contrast. Our results show a striking

• experiment, which is essential for meaningful qualitative comparisons. In this paper we explore the application of a simple Lennard-Jones model with a flexible tip probe [5][7][8] to a case of ‘sub-atomic’ imaging on the Si(111)-7×7 surface [11][12]. We show that the triangular features observed

Investigating organic multilayers by spectroscopic ellipsometry: specific and non-specific interactions of polyhistidine with NTA self-assembled monolayers

• Ilaria Solano,
• Pietro Parisse,
• Ornella Cavalleri,
• Federico Gramazio,
• Loredana Casalis and
• Maurizio Canepa

Beilstein J. Nanotechnol. 2016, 7, 544–553, doi:10.3762/bjnano.7.48

• stripped gold surfaces were preferred. Ultra-flat gold samples were prepared by UHV deposition of gold onto a freshly cleaned Si(111) wafer. A silicon sample was then glued on the gold surface and cured overnight at 130 °C. Ultraflat and clean gold surfaces are obtained by mechanically stripping the

Length-extension resonator as a force sensor for high-resolution frequency-modulation atomic force microscopy in air

• Hannes Beyer,
• Tino Wagner and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2016, 7, 432–438, doi:10.3762/bjnano.7.38

• in air or liquid have been reported so far, for example on mica [13][15], Si(111) [16], on a grating [17], HOPG, and DNA origami [18]. Froning et al. [18] also discussed the influence of the environmental conditions on the sensor properties. Temperature and humidity changes lead to variations in

Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires

• Suvankar Das,
• Amitava Moitra,
• Mishreyee Bhattacharya and
• Amlan Dutta

Beilstein J. Nanotechnol. 2015, 6, 1970–1977, doi:10.3762/bjnano.6.201

• opposite trends. The largest core diameter of 10 nm corresponds to the pure, monoelemental nanowires. Quantum scaling between the real and classical (MD) temperatures for the (a) Si/Ge <111>, (b) Ge/Si <111>, (c) Si/Ge <110> and (d) Ge/Si <110> CSNWs. The minimum nonzero MD temperature corresponding to 0 K

• >-oriented wires of different core diameters. Stability diagrams for CSNWs of (a) Si/Ge <111>, (b) Ge/Si <111>, (c) Si/Ge <110> and (d) Ge/Si <110> configurations. Any combination of temperature increase and nanowire length is safe so long as it remains below the corresponding stability curve

Transformations of PTCDA structures on rutile TiO₂ induced by thermal annealing and intermolecular forces

• Szymon Godlewski,
• Jakub S. Prauzner-Bechcicki,
• Thilo Glatzel,
• Ernst Meyer and
• Marek Szymoński

Beilstein J. Nanotechnol. 2015, 6, 1498–1507, doi:10.3762/bjnano.6.155

• could only be assigned to the longer axis of the molecule, similar to previous studies on Ag/Si(111) [40] and TiO2(011)-(2 × 1) [39]. Therefore, we conclude that the longer molecular axis is oriented parallel to the reconstruction rows of the substrate. The proposed geometry has also been supported

Nano-contact microscopy of supracrystals

• Adam Sweetman,
• Nicolas Goubet,
• Ioannis Lekkas,
• Marie Paule Pileni and
• Philip Moriarty

Beilstein J. Nanotechnol. 2015, 6, 1229–1236, doi:10.3762/bjnano.6.126

• etched tungsten wire glued to one tine of the tuning fork were first prepared on clean Si(111)-(7 × 7) samples by standard STM techniques before imaging of the nanocrystal samples. During imaging of the supracrystal surface, spontaneous and regular tip changes were observed, thus it is possible that the

Fabrication of high-resolution nanostructures of complex geometry by the single-spot nanolithography method

• Alexander Samardak,
• Margarita Anisimova,
• Aleksei Samardak and
• Alexey Ognev

Beilstein J. Nanotechnol. 2015, 6, 976–986, doi:10.3762/bjnano.6.101

• resist (MicroChem Corp., 950 K, 2 wt % in anisole) was spin-coated at different rates in range from 1000–4000 rpm for 1 min in order to produce the desired thickness on standard-cleaned undoped Si(111) substrates without and with a Au thin film of 200 nm thickness. The Au thin film was deposited by

Structure and mechanism of the formation of core–shell nanoparticles obtained through a one-step gas-phase synthesis by electron beam evaporation

• Andrey V. Nomoev,
• Sergey P. Bardakhanov,
• Makoto Schreiber,
• Dashima G. Bazarova,
• Nikolai A. Romanov,
• Boris B. Baldanov,
• Bair R. Radnaev and
• Viacheslav V. Syzrantsev

Beilstein J. Nanotechnol. 2015, 6, 874–880, doi:10.3762/bjnano.6.89

• a drive to decrease the surface energy of the system or differences in the atomic sizes of the component materials. In the case of the Cu–Si system, the difference in covalent radius between Cu (132 pm) and Si (111 pm) is insignificant and thus size effects are not considered relevant for this

Applications of three-dimensional carbon nanotube networks

• Manuela Scarselli,
• Paola Castrucci,
• Francesco De Nicola,
• Ilaria Cacciotti,
• Francesca Nanni,
• Emanuela Gatto,
• Mariano Venanzi and
• Maurizio De Crescenzi

Beilstein J. Nanotechnol. 2015, 6, 792–798, doi:10.3762/bjnano.6.82

• been performed on MWCNT films grown on a Si(111) substrate and a cut piece of CNT-sponge. A 0.5 M KI and 0.01M I2 in acetonitrile solution was used as the electrolyte. Samples were irradiated with light coming from a 200 W Xe lamp (Osram) equipped with a monochromator (λ > 300 nm) and a PG-310

Manipulation of magnetic vortex parameters in disk-on-disk nanostructures with various geometry

• Maxim E. Stebliy,
• Alexander G. Kolesnikov,
• Alexey V. Ognev,
• Alexander S. Samardak and
• Ludmila A. Chebotkevich

Beilstein J. Nanotechnol. 2015, 6, 697–703, doi:10.3762/bjnano.6.70

• diameters of 600 and 200 nm, respectively, were separated by a 3 nm thick Cu interlayer. The nanostructures were fabricated on naturally oxidized Si(111) substrates by means of electron-beam lithography, magnetron sputtering and standard lift-off process. Geometry and surface roughness were checked with

Entropy effects in the collective dynamic behavior of alkyl monolayers tethered to Si(111)

• Christian Godet

Beilstein J. Nanotechnol. 2015, 6, 583–594, doi:10.3762/bjnano.6.60

• Christian Godet Institut de Physique de Rennes, UMR 6251 CNRS - Université de Rennes 1, 35042 Rennes Cedex, France 10.3762/bjnano.6.60 Abstract Dynamic properties of n-alkyl monolayers covalently bonded to Si(111) were studied by broadband admittance spectroscopy as a function of the temperature

• ] conformational changes on electron transport properties have rarely been explicitly described. In this context, this admittance spectroscopy study emphasizes a collective dynamic behavior of linear saturated (n-alkyl) chains tethered to Si(111). Dynamic properties are very sensitive to structure and conformation

• previous work [40] to large reverse dc bias applied to Hg/C12H25/Si tunnel junctions, resulting in a change in the distribution of topological defects, reveals a collective behavior of linear saturated (n-alkyl) chains tethered to the Si(111) surface. The effects of both temperature and applied dc bias on

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

• D. J. Lockwood,
• N. L. Rowell,
• A. Benkouider,
• A. Ronda,
• L. Favre and
• I. Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2498–2504, doi:10.3762/bjnano.5.259

• Marseille Cedex 20, France 10.3762/bjnano.5.259 Abstract We report on the optical properties of SiGe nanowires (NWs) grown by molecular beam epitaxy (MBE) in ordered arrays on SiO2/Si(111) substrates. The production method employs Au catalysts with self-limited sizes deposited in SiO2-free sites opened-up

• concentration x in the range 0 ≤ x ≤ 0.15. Prior to the substrate patterning (Figure 1a), the Si(111) substrates, which were either 5 cm diameter wafers or wafer sections of dimensions 2 × 2 cm2 and 1 × 1 cm2, were first systematically cleaned by a modified Shiraki ex situ process and then capped with an ultra

Poly(styrene)/oligo(fluorene)-intercalated fluoromica hybrids: synthesis, characterization and self-assembly

• Giuseppe Leone,
• Francesco Galeotti,
• William Porzio,
• Guido Scavia,
• Luisa Barba,
• Gianmichele Arrighetti,
• Giovanni Ricci,
• Chiara Botta and
• Umberto Giovanella

Beilstein J. Nanotechnol. 2014, 5, 2450–2458, doi:10.3762/bjnano.5.254

• electron storage ring was monochromatized by a Si(111) double crystal monochromator, focused on the sample and collimated by a double set of slits giving a spot size of 0.2 × 0.2 mm. Both spin-coated films (50–80 nm thick) and powders inserted into a sealed capillary were examined at 25 °C. The beam was