Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• estimated by the analysis of the D/G line intensity ratio [29][30]. Spectra of the underlying SiO2/Si substrate (red line), nonexposed (green line), and exposed graphene flakes (blue line) are collected in Figure 2D. Most of the graphene flake remains unaltered – the G/2D ratio is close to ½ as expected for

• . Complementary studies performed using both in situ and ex situ AFM reveal the modification in SiO2/Si substrate topography. Our results are important not only for applications of water-assisted FEBIE to etching carbon allotropes and SiO2 materials but also in other fields. For example, where electron-driven

• measurements of the etched lines on the SiO2/Si substrate as a function of the dwell time: A) AFM profiles of lines etched with different dwell times (td = 1, 10, and100 μs); B) 3D AFM image of the SiO2 surface. Exposure time and dose values for the etched lines. Author Contributions The manuscript was

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• of the antenna array is 340 µm in both directions for 210 and 240 GHz channels. The frequency response of the two-frequency receiving matrix with a Si substrate thickness of 260 µm is shown in Figure 2 (solid curves). To compare the calculated response with the experimental results, we also added

• curves for a Si substrate thickness of 290 µm (dashed curves). As a result of frequency response optimizations, the following characteristics were obtained: The bandwidth for the 210 GHz channel at half power level is 25.46 GHz, and the maximum absorption occurs at a frequency of 212.1 GHz; the bandwidth

• of frequency bands between arrays of antennas can be seen. We should note here that a certain frequency shift of the channels is due to improper Si substrate thickness (available in the clean room at that time), which was about 0.29 mm instead of the optimized 0.26 mm (see modelling results in Figure

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• , we initially fabricated the nanostructures on a 200 µm thick Si substrate with 100 nm thick SiN buffer layers on both sides. The buffer layers were deposited with low-pressure CVD to ensure stress-free films. The fabrication process is shown in Figure 10. First, we made the nanostructure using lift

Spatial variations of conductivity of self-assembled monolayers of dodecanethiol on Au/mica and Au/Si substrates

• Julian Skolaut,
• Jędrzej Tepper,
• Federica Galli,
• Wulf Wulfhekel and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2023, 14, 1169–1177, doi:10.3762/bjnano.14.97

• S2a). In contrast to the Au/mica surface, the Au/Si substrate exhibits a rougher surface, as seen in Figure 2c, in agreement with the difference in growth mode of Au films on the two substrates. For mica, epitaxial growth is obtained [16][17], while Au on Si/SiO2 forms a granular film [18]. Although

• presents measurements of DDT SAMs on a Au/Si substrate. Comparing topography (Figure 4a) and current map (Figure 4b) to the ones of the bare Au/Si substrate, close similarities can be seen. After coverage of the surface by the SAM, the surface retains the same roughness with only small flat areas. Although

• variation in the current is governed by the structure of the substrate, which remains qualitatively unchanged by the deposition of the SAM. For the Au/Si substrate, the rough topography yields only small areas on the surface on which comparable conductive properties can be expected. Without information on

Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

• Zeinab Eftekhari,
• Nasim Rezaei,
• Hidde Stokkel,
• Jian-Yao Zheng,
• Andrea Cerreta,
• Ilka Hermes,
• Minh Nguyen,
• Guus Rijnders and
• Rebecca Saive

Beilstein J. Nanotechnol. 2023, 14, 1059–1067, doi:10.3762/bjnano.14.87

• membrane with a maximum of 946 pm, while decreasing to a few picometers at the side edges. The decay of displacement from the center to the edge is expected from the clamping effect at the edges, where the Si substrate is thicker [38]. The measured CPD shift in Figure 3b indicates that the photovoltage

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• , we assumed the same Ag layer thickness of 215 ± 7 nm for all samples, equivalent to the thickness of the Ag layer deposited on a flat Si substrate at room temperature. The given thickness corresponds to the amount of deposited Ag determined by the number of laser pulses and does not reflect changes

A mid-infrared focusing grating coupler with a single circular arc element based on germanium on silicon

• Xiaojun Zhu,
• Shuai Li,
• Ang Sun,
• Yongquan Pan,
• Wen Liu,
• Yue Wu,
• Guoan Zhang and
• Yuechun Shi

Beilstein J. Nanotechnol. 2023, 14, 478–484, doi:10.3762/bjnano.14.38

• waveguide with a focusing subwavelength grating MIR grating coupler, the difficulty of preparation has been considerably reduced. Principle and Design Figure 1a shows the tilted view of the proposed MIR FGC. The Ge waveguide layer is built onto the Si substrate forming the Ge-on-Si structure. The proposed

High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• potential), the lifetime has been reported to be less than 5 × 10−6 s. These results indicate that the cutoff frequency fc of carrier transport between the interface and bulk states for a Si substrate with a low carrier density is approximately 200 kHz. Therefore, when an AC bias voltage with a frequency

• . Results and Discussion First, we performed AFM/KPFM measurements on the pn-patterned Si surface to identify the dopant regions on the semiconductor surface. Figure 6a and Figure 6b show the topographic and CPD images of the pn-patterned Si substrate, respectively. The CPD image in Figure 6b was obtained

• a width of approximately 1 μm and a height of approximately 60 nm. Compared with the data of the pn-patterned Si substrate in Figure 5, these rodlike protrusions correspond to p-type or n-type regions, and the low areas between the rodlike protrusions correspond to n+-type regions. From the CPD

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

• Feitao Li,
• Siyao Wan,
• Dong Wang and
• Peter Schaaf

Beilstein J. Nanotechnol. 2023, 14, 133–140, doi:10.3762/bjnano.14.14

• . It has been reported after the annealing of Au thin films deposited on SiO2/Si substrates with different thicknesses of the SiO2 layer [3][4][36]. The active oxidation of Si also occurs once the Si substrate is exposed [2][3][37], which can be proved by the calculated oxygen partial pressure

• decomposition cavities. The active oxidation of Si also happens once the Si substrate is exposed [2][3][37]. Both decomposition and active oxidation can produce volatile SiO gas as the Si vapor source for the formation of SiOx NWs based on VLS mechanism [2][26][27][51][52]. Several NWs nucleate and then grow

• similar annealing parameters [3], which further proves the higher ability of Au, compared to Ni, to enhance the SiO2 decomposition. The cavities keep growing laterally after piercing vertically the SiO2 layer and exposing the Si substrate [39][53][54]. Then, structures around the border of cavities will

Observation of collective excitation of surface plasmon resonances in large Josephson junction arrays

• Roger Cattaneo,
• Mikhail A. Galin and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2022, 13, 1578–1588, doi:10.3762/bjnano.13.132

• in the reverse branch of the I–V characteristics for both arrays. As shown in [9][34], they are caused by propagation of surface plasmon-type EMWs along the Nb electrode–Si substrate interface. These steps appear when the Josephson frequency coincides with one of the cavity mode frequencies

Induced electric conductivity in organic polymers

• Konstantin Y. Arutyunov,
• Anatoli S. Gurski,
• Vladimir V. Artemov,
• Alexander L. Vasiliev,
• Azat R. Yusupov,
• Danfis D. Karamov and
• Alexei N. Lachinov

Beilstein J. Nanotechnol. 2022, 13, 1551–1557, doi:10.3762/bjnano.13.128

• of the PDP polymer solutions. For example, Figure 2b shows the topography of the polymer film 0.1 wt % on Si substrate. The plot at the bottom demonstrates the variation of the structure along the line, depicted at the upper panel. The distance between the measuring lines is of the order of the

• strip and the whole sandwich itself. (b) Atomic force microscope scan of a PDP film 0.1 wt % on Si substrate. The plot at the bottom illustrates the roughness of the surface along the indicated line. (c) Side view of a Pb–PDP–Pb structure on glass with solitary defect (lead shortcut) obtained by

Role of titanium and organic precursors in molecular layer deposition of “titanicone” hybrid materials

• Arbresha Muriqi and
• Michael Nolan

Beilstein J. Nanotechnol. 2022, 13, 1240–1255, doi:10.3762/bjnano.13.103

• significant drawback [38]. Fumaric acid (FC) is another alcohol organic precursor that was used to deposit titanicone films using TiCl4 on an Si substrate in a temperature range of 180 °C to 350 °C. A temperature-dependent growth characteristic was observed with the growth rate decreasing from 1.10 Å/cycle at

• Ti(DMA)4 in the next cycle and the growth proceeds. Calculations energetics suggest that organic molecules EG and GL combined with Ti(DMA)4 in a anatase TiO2, rutile TiO2 and Al2O3 surface behave similarly as when combined with Ti(DMA)4 on a Si substrate [33]. Experimental data in ref [33] show that

• for Ti(DMA)4–EG films deposited on a Si substrate in a temperature range of 80–150 °C the growth starts but it stops after 5–10 cycles, and this most probably due to the favourable double reactions of EG molecules with the Ti species. For Ti(DMA)4–GL films the growth proceeds even when the molecule

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• up with a target substrate (SiO2/Si wafer). The sample was dried in a vacuum chamber (ca. 10−4 Torr) at room temperature for 2 h. For PMMA removal, the entire sample was vertically dipped into an acetone bath for 4 h. After that, the exposed graphene on a SiO2/Si substrate was again vertically dipped

Revealing local structural properties of an atomically thin MoSe₂ surface using optical microscopy

• Lin Pan,
• Peng Miao,
• Anke Horneber,
• Alfred J. Meixner,
• Pierre-Michel Adam and
• Dai Zhang

Beilstein J. Nanotechnol. 2022, 13, 572–581, doi:10.3762/bjnano.13.49

• local structural properties on the Raman enhancement at 2D-TMDC monolayer surfaces. Results In this work, triangular MoSe2 flakes were chemically synthesized on a precleaned Si substrate coated with a thermally grown layer of SiO2. To investigate the Raman enhancement effect on a MoSe2 flake, we choose

• in Figure 1b are high-resolution AFM images of CuPc/MoSe2. The upper inset exhibits a step from the SiO2/Si substrate to the border of the MoSe2 flake, and the lower inset shows a distinct transition from the border to the center of the MoSe2 flake. The MoSe2 flake is fully covered by CuPc molecule

• aggregations, while on the SiO2/Si substrate some CuPc molecules aggregated to a rod-like particle, which has been also reported in the literature [24]. The height profile marked by the dashed white line in Figure 1b is visualized in Figure 1c. It suggests that the center of the MoSe2 flake is slightly thinner

Open-loop amplitude-modulation Kelvin probe force microscopy operated in single-pass PeakForce tapping mode

• Gheorghe Stan and
• Pradeep Namboodiri

Beilstein J. Nanotechnol. 2021, 12, 1115–1126, doi:10.3762/bjnano.12.83

• substrate (Bruker Nano Surfaces, Santa Barbara, CA, USA); the metal regions are separated by trenches that expose the Si substrate at their bottom. Figure 1a shows the AFM topographical image of one of these trenches, bordered by Au (left) and Al (right). The CPD maps over the sample were obtained first by

• electrical [57][58], chemical [59], optical [60][61], and mechanical [62][63] measurements. Results and Discussion Closed-loop KPFM measurements in two-pass PFT mode The new OL AM-KPFM implementation was tested on a commercially available sample consisting of large Au and Al metal regions deposited on a Si

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• their sizes [92]. Generally, a QD-based EML is sandwiched between a polymer-based ETL and HTL. Carbon-based nanomaterials such as SWNT have also been investigated as EML in OLED. Firstly, a SWNT p–n junction on a Si substrate has been investigated by Lee et al. [93]. Further, Mueller et al., with some

A Au/CuNiCoS₄/p-Si photodiode: electrical and morphological characterization

• Adem Koçyiğit,
• Adem Sarılmaz,
• Teoman Öztürk,
• Faruk Ozel and
• Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

• /H2O (1:10) solution for eliminating the oxide layer and impurities from the surfaces. An ohmic contact with low resistance was made by evaporation of aluminium (Al, 99.999% from Kurt J. Lesker) with a thickness of 150 nm at 5 × 10−6 Torr on the back side of the p-type Si substrate and subsequent

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• a 180 μm thick p-type Si substrate. Further cost reduction requires the use of a thinner Si substrate/absorber. Thus, in this paper we report photovoltaic results for a 50 μm thick Si absorber. Experimental Silicon preparation The p-type silicon wafer with thickness of 50 μm and a diameter of 5 cm

• large angles between cell and light source. The magnesium-doped zinc oxide films exhibited grain growth mode on sample B. Close to the silicon surface, only small grains were grown initially. The size of the MZO grains varies but does not exceed a value of 50 nm. Then (for larger distances from the Si

• substrate), the growth mode is similar to that observed for sample A. However, the size of the columns is smaller and does not exceed 100 nm in width. In the tested samples, a microcrystalline structure of the MZO film was detected. Our previous research proved the monocrystalline quality of ZnONR [15

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• SiO2/Si substrate were irradiated on one half with 25 keV helium ions. It was found that at a dose of 2 × 1015 ions/cm2 a domain wall could be injected into the structure due to the introduction of lattice defects that locally reduced the perpendicular magnetic anisotropy. By raising the dose slightly

Electron beam-induced deposition of platinum from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Aya Mahgoub,
• Hang Lu,
• Rachel M. Thorman,
• Konstantin Preradovic,
• Titel Jurca,
• Lisa McElwee-White,
• Howard Fairbrother and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2020, 11, 1789–1800, doi:10.3762/bjnano.11.161

• dispersive X-ray analysis Energy dispersive X-ray (EDX) spectroscopy was performed using an Oxford XMax150 detector on a Zeiss Supra 55 SEM. For EDX measurements, 250 × 250 nm2 squares were deposited, thick enough to minimize the signal from the Si substrate during the analysis with a 5 keV beam. The beam

• Information The file contains EDX spectra of deposits grown from all three precursors before and after plasma cleaning the SEM chamber, an EDX spectrum of the bare Si substrate and graphs of the diameters of pillars grown in experiments 1 and 2. Supporting Information File 150: Additional experimental data

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• . The starting material is a p-type Si substrate with relatively high ohmic resistance (1 kΩ·cm), oriented along the ⟨100⟩ direction. The first step in the process consists of forming an n-type doped buried layer (BN) on the top of the wafer (through implantation and diffusion of the doping species). A

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

• Nico Klingner,
• Gregor Hlawacek,
• Paul Mazarov,
• Wolfgang Pilz,
• Fabian Meyer and
• Lothar Bischoff

Beilstein J. Nanotechnol. 2020, 11, 1742–1749, doi:10.3762/bjnano.11.156

• mass-separated FIBs from a Co36Nd64 LMAIS to implant Co into Si at elevated temperatures, leading to metallic CoSi2 nanostructures down to 20 nm [13]. Ge nanowires could be grown by molecular beam epitaxy, via a vapor–liquid–solid process, on a Si substrate after formation of a regular seed array using

A self-powered, flexible ultra-thin Si/ZnO nanowire photodetector as full-spectrum optical sensor and pyroelectric nanogenerator

• Liang Chen,
• Jianqi Dong,
• Miao He and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1623–1630, doi:10.3762/bjnano.11.145

• -performance PDs for full-spectrum communication and PENGs utilizing a simple and low-cost method, which offer potential applications in self-powered flexible electronic devices. Experimental Fabrication process of the device: Firstly, the ultra-thin (45 μm) p-Si substrate was prepared by isotropic chemical

• etching. More specifically, a 500 μm p-type high conductivity Si substrate was dipped into potassium hydrate (KOH) solution with a concentration of 50% at 130 °C for 6–8 h. Then, the obtained 45 μm p-Si was washed with acetone, isopropanol, and deionized water. Secondly, a thin ZnO seed layer was

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• from the generated e–h pairs in the depletion region; this process occurred when hν ≥ Eg (Ag2S NPs). As shown in Figure 14, the electrons drifted to Ag2S, and the holes diffused toward the p-Si substrate. Conclusion In this work, we successfully prepared monodisperse Ag2S NPs by laser ablation of a

Fabrication of nano/microstructures for SERS substrates using an electrochemical method

• Jingran Zhang,
• Tianqi Jia,
• Xiaoping Li,
• Junjie Yang,
• Zhengkai Li,
• Guangfeng Shi,
• Xinming Zhang and
• Zuobin Wang

Beilstein J. Nanotechnol. 2020, 11, 1568–1576, doi:10.3762/bjnano.11.139

• over a 20 × 20 μm2 area. Before the tests, the Raman spectra were rectified using a standard Si substrate. A Raman intensity peak of 1362 cm−1 for R6G was chosen in the experiment. An atomic force microscopy (AFM) system (Dimension Icon, Bruker, Germany) was employed to detect the two-dimensional and