Controlling surface morphology and sensitivity of granular and porous silver films for surface-enhanced Raman scattering, SERS

• Sherif Okeil and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2018, 9, 2813–2831, doi:10.3762/bjnano.9.263

• Scientific UV–vis spectrophotometer (Evolution 600). The water contact angle was measured using a Krüss DSA 30 model drop-shape analysis system. The water contact angle was measured by placing 5 µL water droplets on the silver surface. Atomic layer deposition (ALD) of Al2O3 Silver films on glass substrates

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

• Muhammad Imran,
• Nunzio Motta and
• Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

Spin-coated planar Sb₂S₃ hybrid solar cells approaching 5% efficiency

• Pascal Kaienburg,
• Benjamin Klingebiel and
• Thomas Kirchartz

Beilstein J. Nanotechnol. 2018, 9, 2114–2124, doi:10.3762/bjnano.9.200

• ][5][6][29] reach the highest efficiencies. Planar devices have been produced via various methods such as atomic layer deposition (ALD) [32], chemical bath deposition (CBD) [27] and (rapid) thermal evaporation (R)TE [33][34][35]. As the latest development, spin-coated planar solar cells [31][36][37

Localized photodeposition of catalysts using nanophotonic resonances in silicon photocathodes

• Evgenia Kontoleta,
• Sven H. C. Askes,
• Lai-Hung Lai and
• Erik C. Garnett

Beilstein J. Nanotechnol. 2018, 9, 2097–2105, doi:10.3762/bjnano.9.198

• carriers (Figure 2). An 18 nm amorphous TiO2 layer was conformally deposited on the silicon nanostructures by using atomic layer deposition (ALD). This layer assists with charge separation, stabilizes the silicon surface and helps to passivate trap states, leading to well-known improvements in photo

Magnetic properties of Fe₃O₄ antidot arrays synthesized by AFIR: atomic layer deposition, focused ion beam and thermal reduction

• Juan L. Palma,
• Alejandro Pereira,
• Raquel Álvaro,
• José Miguel García-Martín and
• Juan Escrig

Beilstein J. Nanotechnol. 2018, 9, 1728–1734, doi:10.3762/bjnano.9.164

• atomic layer deposition (ALD) [31][32][33]. Due to the self-limited growth of material, ALD allows to control the thickness of the films with high precision [34]. The holes arise because of a dewetting process of the sample [35], which depends on its geometric and magnetic parameters as well as on the

Semi-automatic spray pyrolysis deposition of thin, transparent, titania films as blocking layers for dye-sensitized and perovskite solar cells

• Hana Krýsová,
• Josef Krýsa and
• Ladislav Kavan

Beilstein J. Nanotechnol. 2018, 9, 1135–1145, doi:10.3762/bjnano.9.105

• prevent recombination on this surface [3][4][5]. Blocking layers (BLs) can be fabricated by spray pyrolysis [3][6], magnetron sputtering [7], electrochemical deposition [8] spin coating [9][10], dip coating [11] and atomic layer deposition (ALD) [3]. From the viewpoint of low-cost processing and easy

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• this work, we investigate the effect of thermal treatment on CeO2 films fabricated by using atomic layer deposition (ALD) on titanium nitride (TiN) or on silicon (Si) substrates. In particular, we report on the structural, chemical and morphological properties of 25 nm thick ceria oxide with particular

• sputtering [7], e-beam [16], physical vapor deposition [17], chemical vapor deposition (CVD) [18], and atomic layer deposition (ALD). The latter has been explored by using different precursors, e.g., Ce(thd)4, Ce(iPrCp)3 and Ce(mmp)4) [19][20][21][22][23], obtaining as-deposited film with polycrystalline

Dynamics and fragmentation mechanism of (C₅H₄CH₃)Pt(CH₃)₃ on SiO₂ surfaces

• Kaliappan Muthukumar,
• Harald O. Jeschke and
• Roser Valentí

Beilstein J. Nanotechnol. 2018, 9, 711–720, doi:10.3762/bjnano.9.66

• fragmentation pathways qualitatively. In a recent investigation, thickness-controlled site-selective Pt deposits were obtained by direct atomic layer deposition (ALD) in which ALD was performed on EBID patterned substrates. In this ALD process, an O2 pulse is used to obtain better nucleation, even though the

• layer deposition (ALD) conditions are available [12]. The studies in this review fairly agree that (1) the presence of surface hydroxyl groups are the source for protons that help in the evolution of H2, CH4 and H2O during the deposition process, and (2) the molecules dissociate or associate through a

• bonds directly to three methyl groups and a methylated cyclopentadienyl ring is a widely used precursor to obtain Pt deposits. Although the dissociation mechanism of (C5H4CH3)Pt(CH3)3 leading to the Pt deposit remains unknown, studies for a family of precursors similar to (C5H4CH3)Pt(CH3)3 in atomic

Al₂O₃/TiO₂ inverse opals from electrosprayed self-assembled templates

• Arnau Coll,
• Sandra Bermejo,
• David Hernández and
• Luís Castañer

Beilstein J. Nanotechnol. 2018, 9, 216–223, doi:10.3762/bjnano.9.23

• errors and Al2O3/TiO2 as a structural layer infiltrated through the voids. This is a two-step atomic layer deposition (ALD) process in which the polymeric template is eliminated after the deposition of the alumina layer and before the ALD deposition of the titania layer. Results and Discussion The

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

• Kristjan Kalam,
• Helina Seemen,
• Peeter Ritslaid,
• Mihkel Rähn,
• Aile Tamm,
• Kaupo Kukli,
• Aarne Kasikov,
• Joosep Link,
• Raivo Stern,
• Salvador Dueñas,
• Helena Castán and
• Héctor García

Beilstein J. Nanotechnol. 2018, 9, 119–128, doi:10.3762/bjnano.9.14

• grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO2 were stabilized by Fe2O3 doping. The number of alternating ZrO2 and Fe2O3 deposition cycles were varied in order to achieve films with different cation ratios. The influence of annealing on the composition and structure of the

Comparative study of post-growth annealing of Cu(hfac)₂, Co₂(CO)₈ and Me₂Au(acac) metal precursors deposited by FEBID

• Marcos V. Puydinger dos Santos,
• Aleksandra Szkudlarek,
• Artur Rydosz,
• Carlos Guerra-Nuñez,
• Fanny Béron,
• Kleber R. Pirota,
• Stanislav Moshkalev,
• José Alexandre Diniz and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 91–101, doi:10.3762/bjnano.9.11

• μm2 were similar for Cu–C and Au–C (ca. 1.7 nm·min−1), while they were slightly lower for Co–C (ca. 1.4 nm·min−1), being comparable to typical atomic layer deposition (ALD) processes. Measurements performed on deposits after annealing at 300 °C indicate shrinkage with respect to the as-deposited

Increasing the stability of DNA nanostructure templates by atomic layer deposition of Al₂O₃ and its application in imprinting lithography

• Hyojeong Kim,
• Kristin Arbutina,
• Anqin Xu and
• Haitao Liu

Beilstein J. Nanotechnol. 2017, 8, 2363–2375, doi:10.3762/bjnano.8.236

• conformal coating with a nanometer-thin protective inorganic oxide layer created using atomic layer deposition (ALD). DNA nanotubes and origami triangles were coated with ca. 2 nm to ca. 20 nm of Al2O3. Nanoscale features of the DNA nanostructures were preserved after the ALD coating and the patterns are

• inorganic oxide film grown by atomic layer deposition (ALD). We test the stability of DNA nanotube master templates with an Al2O3 layer against repeated pattern transfer, long-term storage and exposure to UV/O3. The effect of the thickness of the Al2O3 layer on the qualities of pattern transfer and shape

• , the DNA origami triangle master template was processed with ALD of Al2O3 within 24 h. Atomic layer deposition (ALD) of Al2O3 as a protective inorganic film on a DNA master template ALD of Al2O3 on a DNA/SiO2 substrate followed a previously published method [36]. ALD was conducted using a Fiji ALD

The integration of graphene into microelectronic devices

• Guenther Ruhl,
• Sebastian Wittmann,
• Matthias Koenig and
• Daniel Neumaier

Beilstein J. Nanotechnol. 2017, 8, 1056–1064, doi:10.3762/bjnano.8.107

• yields excellent results [4], but this is not a production-relevant approach. A material that is available in mass-production quantities and fulfills both mentioned requirements is aluminum oxide deposited by atomic-layer deposition (ALD). It was demonstrated that graphene encapsulated in Al2O3 could be

High photocatalytic activity of Fe₂O₃/TiO₂ nanocomposites prepared by photodeposition for degradation of 2,4-dichlorophenoxyacetic acid

• Shu Chin Lee,
• Hendrik O. Lintang and
• Leny Yuliati

Beilstein J. Nanotechnol. 2017, 8, 915–926, doi:10.3762/bjnano.8.93

• ], plasma enhanced-chemical vapor deposition (PE-CVD) and radio frequency (RF) sputtering approach [12], and plasma enhanced-chemical vapor deposition and atomic layer deposition (ALD) followed by thermal treatment [13]. Among these preparation methods, impregnation is a commonly used approach for the

Vapor deposition routes to conformal polymer thin films

• Priya Moni,
• Ahmed Al-Obeidi and
• Karen K. Gleason

Beilstein J. Nanotechnol. 2017, 8, 723–735, doi:10.3762/bjnano.8.76

• ]. However, no systematic studies of conformality have been devoted solely to these techniques thus far. Practitioners of MLD can look at existing models for its inorganic analogue, atomic layer deposition (ALD), as a starting point for studying conformal MLD films [12]. This review will focus on two, well

Advances in the fabrication of graphene transistors on flexible substrates

• Gabriele Fisichella,
• Stella Lo Verso,
• Silvestra Di Marco,
• Vincenzo Vinciguerra,
• Emanuela Schilirò,
• Salvatore Di Franco,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Amaia Zurutuza,
• Alba Centeno,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2017, 8, 467–474, doi:10.3762/bjnano.8.50

• layer deposition (ALD) represents an optimal method to fabricate a good quality Al2O3 dielectric film with a tight control on the deposited thickness and a high level of conformal coverage. While the thickness control allows easy fabrication of a tens of nanometer thick dielectric film (resulting in a

• devices performance. A low temperature (100 °C) deposition process to obtain a high quality dielectric film is essential in order to be compatible with common plastic substrates, such as poly(ethylene terephthalate) (PET) or poly(ethylene naphthalate) (PEN), which is also the case of our study. Atomic

Diffusion of dilute gas in arrays of randomly distributed, vertically aligned, high-aspect-ratio cylinders

• Wojciech Szmyt,
• Carlos Guerra and
• Ivo Utke

Beilstein J. Nanotechnol. 2017, 8, 64–73, doi:10.3762/bjnano.8.7

• the coating of nanotubes or nanowires with thin films employing techniques such as chemical vapour deposition (CVD) [11] or atomic layer deposition (ALD) [12][13]. Our recent study constitutes an example of the coating of vertically aligned carbon nanotubes (VACNTs) with monocrystalline anatase using

Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions

• Christoph Schreyvogel,
• Vladimir Polyakov,
• Sina Burk,
• Helmut Fedder,
• Andrej Denisenko,
• Felipe Fávaro de Oliveira,
• Ralf Wunderlich,
• Jan Meijer,
• Verena Zuerbig,
• Jörg Wrachtrup and
• Christoph E. Nebel

Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165

• stable device operation and NV manipulation. One passivation method was suggested by Hiraiwa et al. by covering the surface with an Al2O3 film using an atomic-layer-deposition (ALD) method with an H2O oxidant at 450 °C [29]. They could show that this film does not destroy the C–H bonds as well as the

Sb₂S₃ grown by ultrasonic spray pyrolysis and its application in a hybrid solar cell

• Erki Kärber,
• Atanas Katerski,
• Ilona Oja Acik,
• Arvo Mere,
• Valdek Mikli and
• Malle Krunks

Beilstein J. Nanotechnol. 2016, 7, 1662–1673, doi:10.3762/bjnano.7.158

• -porous TiO2 as the electron conductor have reached a conversion efficiency of 7.5% when post-deposition sulfurization and thermal treatment of Sb2S3 were used [17]. The introduction of atomic layer deposition (ALD) for growing Sb2S3 onto a meso-porous TiO2 substrate was successful with respective solar

Paramagnetism of cobalt-doped ZnO nanoparticles obtained by microwave solvothermal synthesis

• Jacek Wojnarowicz,
• Sylwia Kusnieruk,
• Tadeusz Chudoba,
• Stanislaw Gierlotka,
• Witold Lojkowski,
• Wojciech Knoff,
• Malgorzata I. Lukasiewicz,
• Bartlomiej S. Witkowski,
• Anna Wolska,
• Marcin T. Klepka,
• Tomasz Story and
• Marek Godlewski

Beilstein J. Nanotechnol. 2015, 6, 1957–1969, doi:10.3762/bjnano.6.200

• cause any structural changes in the investigated samples. A comparison of the Fourier transformations of EXAFS oscillations (measured at the Co K-edge for four types of Zn1−xCoxO NPs and for the reference Zn1−xCoxO sample grown by atomic layer deposition (ALD)) is shown in Figure 11. The method of

Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte

• Sanghoon Ji,
• Waqas Hassan Tanveer,
• Wonjong Yu,
• Sungmin Kang,
• Gu Young Cho,
• Sung Han Kim,
• Jihwan An and
• Suk Won Cha

Beilstein J. Nanotechnol. 2015, 6, 1805–1810, doi:10.3762/bjnano.6.184

• pinhole issues causing gas permeation and electrode diffusion due to the rough surface of porous substrates [5]. This drawback necessitates conformal and dense thin film electrolytes, and can appreciably be relieved with an aid of atomic layer deposition (ALD) technique that is governed by binary reaction

High sensitivity and high resolution element 3D analysis by a combined SIMS–SPM instrument

• Yves Fleming and
• Tom Wirtz

Beilstein J. Nanotechnol. 2015, 6, 1091–1099, doi:10.3762/bjnano.6.110

• are commonly used. For manufacturing the structures used in this example, a TaN layer was grown through atomic layer deposition (ALD) on a Si wafer. Subsequently, using e-beam patterning the trenches were etched into the TaN layer. After processing, the test structures were deliberately contaminated

Simple approach for the fabrication of PEDOT-coated Si nanowires

• Mingxuan Zhu,
• Marielle Eyraud,
• Judikael Le Rouzo,
• Nadia Ait Ahmed,
• Florence Boulc’h,
• Claude Alfonso,
• Philippe Knauth and
• François Flory

Beilstein J. Nanotechnol. 2015, 6, 640–650, doi:10.3762/bjnano.6.65

• individually coated. Various fabrication efforts have been attempted to achieve a true core–shell p–n junction. For example, chemical vapor deposition (CVD) [10][11] and atomic layer deposition (ALD) [12] are methods that can be employed to obtain this type of nanostructured junction, however, they suffer from

Conformal SiO₂ coating of sub-100 nm diameter channels of polycarbonate etched ion-track channels by atomic layer deposition

• Nicolas Sobel,
• Christian Hess,
• Manuela Lukas,
• Anne Spende,
• Bernd Stühn,
• M. E. Toimil-Molares and
• Christina Trautmann

Beilstein J. Nanotechnol. 2015, 6, 472–479, doi:10.3762/bjnano.6.48

• 10.3762/bjnano.6.48 Abstract Polycarbonate etched ion-track membranes with about 30 µm long and 50 nm wide cylindrical channels were conformally coated with SiO2 by atomic layer deposition (ALD). The process was performed at 50 °C to avoid thermal damage to the polymer membrane. Analysis of the coated

• in the range of nanometres and lengths in the range of micrometres, cylindrical tubes with an aspect ratio as large as 3000 have been produced. Keywords: atomic layer deposition (ALD); ion-track technology; nanochannels; polycarbonate; silica (SiO2); small angle X-ray scattering (SAXS); track-etched

• coating of the entire membrane by an inorganic material would provide a well-defined reference surface. Coating by means of atomic layer deposition (ALD) is a novel approach to reduce the diameter of track-etched nanochannels in a controlled manner. Channels with diameter below 10 nm are extremely

UHV deposition and characterization of a mononuclear iron(III) β-diketonate complex on Au(111)

• Irene Cimatti,
• Silviya Ninova,
• Valeria Lanzilotto,
• Luigi Malavolti,
• Luca Rigamonti,
• Brunetto Cortigiani,
• Matteo Mannini,
• Elena Magnano,
• Federica Bondino,
• Federico Totti,
• Andrea Cornia and
• Roberta Sessoli

Beilstein J. Nanotechnol. 2014, 5, 2139–2148, doi:10.3762/bjnano.5.223

• in relation with their use as metallic precursors in coating technology, such as chemical vapour deposition (CVD) and atomic layer deposition (ALD) [21][22]. For instance, the reactivity of CuII(hfac)2, hfac− = hexafluoroacetylacetonate, was found to critically depend on the nature of the molecule