Synthesis and applications of carbon nanomaterials for energy generation and storage

• Marco Notarianni,
• Jinzhang Liu,
• Kristy Vernon and
• Nunzio Motta

Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17

• graphene oxide CVD Synthesis on SiC Each of these methods has its advantages and disadvantages in terms of quality, yield production and applications, as summarized in Table 1. In particular, mechanical exfoliation most likely produces the best samples in terms of charge carrier mobility but is probably

Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires

• Suvankar Das,
• Amitava Moitra,
• Mishreyee Bhattacharya and
• Amlan Dutta

Beilstein J. Nanotechnol. 2015, 6, 1970–1977, doi:10.3762/bjnano.6.201

• for next generation transistor devices. The radial heterostructure offers the advantage of control of the band gap and charge carrier mobility by tuning their size [5] and selecting suitable impurity doping scheme [3][6]. In addition, they exhibit significantly suppressed phonon thermal conductivity

• ], it is prohibitively difficult to experimentally measure the thermal load on ultrathin CSNWs. The effect of thermal stress on the performance of the device is again two-fold. The mechanical load would alter its electronic band structure and charge carrier mobility [11][12][13], which is particularly

Current–voltage characteristics of manganite–titanite perovskite junctions

• Benedikt Ifland,
• Patrick Peretzki,
• Birte Kressdorf,
• Philipp Saring,
• Andreas Kelling,
• Michael Seibt and
• Christian Jooss

Beilstein J. Nanotechnol. 2015, 6, 1467–1484, doi:10.3762/bjnano.6.152

Attenuation, dispersion and nonlinearity effects in graphene-based waveguides

• Almir Wirth Lima Jr.,
• João Cesar Moura Mota and
• Antonio Sergio Bezerra Sombra

Beilstein J. Nanotechnol. 2015, 6, 1221–1228, doi:10.3762/bjnano.6.125

• isomorphic insulator in which the boron and nitrogen atoms occupy positions A and B in the Bernal structure. Therefore, the atomic structure of h-BN is similar (hexagonal) to the structure of graphene. It is worth noting that graphene on a layer of h-BN has a charge carrier mobility value and homogeneity of

Charge carrier mobility and electronic properties of Al(Op)₃: impact of excimer formation

• Andrea Magri,
• Pascal Friederich,
• Bernhard Schäfer,
• Valeria Fattori,
• Xiangnan Sun,
• Timo Strunk,
• Velimir Meded,
• Luis E. Hueso,
• Wolfgang Wenzel and
• Mario Ruben

Beilstein J. Nanotechnol. 2015, 6, 1107–1115, doi:10.3762/bjnano.6.112

• the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op)3 into organic thin film transistors (TFTs) was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility

• . Keywords: charge carrier mobility; HOMO–LUMO energy levels; photophysical characterization; TFT devices; tris-(1-oxo-1H-phenalen-9-olate)aluminum(III); Introduction Since the field of organic electronics has emerged, interest in organic semiconductors (OSCs) has substantially increased [1]. The efficiency

• as well as in thin films to investigate the solid state properties. Moreover, the aluminum complex has been implemented in organic thin film transistors devices (TFTs) to measure the charge carrier mobility. Finally, an extensive theoretical investigation has been carried out for comparison with the

Microwave assisted synthesis and characterisation of a zinc oxide/tobacco mosaic virus hybrid material. An active hybrid semiconductor in a field-effect transistor device

• Shawn Sanctis,
• Rudolf C. Hoffmann,
• Sabine Eiben and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2015, 6, 785–791, doi:10.3762/bjnano.6.81

• current and voltage of 40 mA and 40 kV, respectively. FET characterizations were measured in the dark, using an HP 4155A semiconductor parameter analyzer (Agilent) in a glove box under constant O2 and H2O (<0.5 ppm). Charge carrier mobility in the saturation regime µSAT and the threshold voltage Vth were

• the zinc oximato complex as precursor [13]. The transistor behaviour of the wt TMV/ZnO hybrid material was then optimized based on the crucial characteristic FET values, current on/off ratio (Ion/off), threshold voltage (Vth) and charge carrier mobility (µ) which are considered to be essential

Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum

• Andrea Candini,
• Nils Richter,
• Domenica Convertino,
• Camilla Coletti,
• Franck Balestro,
• Wolfgang Wernsdorfer,
• Mathias Kläui and
• Marco Affronte

Beilstein J. Nanotechnol. 2015, 6, 711–719, doi:10.3762/bjnano.6.72

• process in multilayered graphene microstructures, employing thin discs of turbostratically stacked graphene (TG, see Experimental for details on the preparation). These discs are comprise up to 100 graphene layers exhibiting a rather large charge carrier mobility in the range of 105 cm2/V·s which

Effect of channel length on the electrical response of carbon nanotube field-effect transistors to deoxyribonucleic acid hybridization

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An,
• Yani Zhang,
• Chee How Wong and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2081–2091, doi:10.3762/bjnano.5.217

• . Calculations The effective mobility (µe) represents the intrinsic physical charge carrier mobility of the CNT channel without including any device attributes and is given by, where G = δID/δVDS at constant VG, G is the conductance at a particular gate voltage and Vth is the threshold voltage [24]. The

Optical properties and electrical transport of thin films of terbium(III) bis(phthalocyanine) on cobalt

• Peter Robaschik,
• Pablo F. Siles,
• Daniel Bülz,
• Peter Richter,
• Manuel Monecke,
• Michael Fronk,
• Svetlana Klyatskaya,
• Daniel Grimm,
• Oliver G. Schmidt,
• Mario Ruben,
• Dietrich R. T. Zahn and
• Georgeta Salvan

Beilstein J. Nanotechnol. 2014, 5, 2070–2078, doi:10.3762/bjnano.5.215

• microscale. The AFM-based electrical measurements allow the local charge carrier mobility of the TbPc2 thin films to be quantified with nanoscale resolution. Keywords: current sensing AFM; ellipsometry; spintronics; TbPc2; transport properties; Introduction Molecular spintronic devices could bring a new

• of the organic film, ε is the relative dielectric constant, ε0 is the permittivity of free space, µ is the charge carrier mobility and V is the applied voltage. From the ohmic-like regime (see Figure 7b) we obtained parameters of σ/L equal to 1.38 and 0.97 kA/cm2 V for the samples of 20 and 80 nm

• of the Pt-coated AFM probes used in this work [26]. Applying this geometry-corrected model to our current density measurements, it is possible to quantify the charge carrier mobility for the TbPc2 thin films on a nanometer scale. The values of L and Pd are fixed by the film thickness and tip geometry

Electronic and electrochemical doping of graphene by surface adsorbates

• Hugo Pinto and
• Alexander Markevich

Beilstein J. Nanotechnol. 2014, 5, 1842–1848, doi:10.3762/bjnano.5.195

• behaves like an n-type doped semiconductor but exhibits a low charge carrier mobility [16]. The surface transfer doping is non-destructive and occurs due to the charge transfer between graphene and surface adsorbates. Two mechanisms of charge transfer doping can be distinguished, electronic and

• ionized dopants become additional charge scatterers leading to a reduction in the charge carrier mobility. The electrochemical doping of graphene occurs as a result of redox reactions that can take place near the graphene surface. Unlike electronic doping it does not reduce the charge carriers mobility

Functionalization of vertically aligned carbon nanotubes

• Eloise Van Hooijdonk,
• Carla Bittencourt,
• Rony Snyders and
• Jean-François Colomer

Beilstein J. Nanotechnol. 2013, 4, 129–152, doi:10.3762/bjnano.4.14

• products showed a high-quality structural arrangement and an enhanced electrical conductivity. Many physical properties such as morphology, thermal stability, conductivity and charge carrier mobility are disrupted by this treatment. This can be crucial for applications in the photovoltaic field. We can

Dimer/tetramer motifs determine amphiphilic hydrazine fibril structures on graphite

• Loji K. Thomas,
• Nadine Diek,
• Uwe Beginn and
• Michael Reichling

Beilstein J. Nanotechnol. 2012, 3, 658–666, doi:10.3762/bjnano.3.75

• functional arrangements up to millimetre dimensions [6]. With suitable functional moieties, they can guide ions, electrons or even photons and can serve as interconnects when integrated into electronic or bioelectronic devices [1][5][7]. Further progress in this area is mostly limited by low charge-carrier

• mobility and the mostly amorphous local packing. Therefore, it is essential to synthesize optimized materials, explore supramolecular routes towards new functional structures, and understand processes of structure formation at interfaces [8][9]. The knowledge about the internal structure of the columns