Direct growth of few-layer graphene on AlN-based resonators for high-sensitivity gravimetric biosensors

• Jimena Olivares,
• Teona Mirea,
• Lorena Gordillo-Dagallier,
• Bruno Marco,
• José Miguel Escolano,
• Marta Clement and
• Enrique Iborra

Beilstein J. Nanotechnol. 2019, 10, 975–984, doi:10.3762/bjnano.10.98

• functionalization platforms. On one hand, graphene containing defects (COOH groups) can be covalently functionalized by using an EDC/NHS zero-cross linker, which allows for the binding of primary amines present in proteins and antibodies [11][12]. On the other hand, defect-free graphene is highly hydrophobic, and

• of their characteristics and then functionalized to manufacture gravimetric biosensors, which eliminates the need to use complex transfer methods. Defect-free few-layer graphene was selectively grown through a low-temperature (650 °C) CVD process on Ni [16] thin-film catalysts previously evaporated

Recent highlights in nanoscale and mesoscale friction

• Andrea Vanossi,
• Dirk Dietzel,
• Andre Schirmeisen,
• Ernst Meyer,
• Rémy Pawlak,
• Thilo Glatzel,
• Marcin Kisiel,
• Shigeki Kawai and
• Nicola Manini

Beilstein J. Nanotechnol. 2018, 9, 1995–2014, doi:10.3762/bjnano.9.190

• annealing, dehalogenation as well as cyclodehydrogenation can be achieved, which leads to clean, defect-free GNRs. Therefore, ideal contacts, free of contaminants, can be grown on the gold surface. The GNRs are observed to move preferentially in the [−101] direction, where the moiré pattern forming with Au

Al₂O₃/TiO₂ inverse opals from electrosprayed self-assembled templates

• Arnau Coll,
• Sandra Bermejo,
• David Hernández and
• Luís Castañer

Beilstein J. Nanotechnol. 2018, 9, 216–223, doi:10.3762/bjnano.9.23

• top-down approaches based on lithography or holography), the present state of the current techniques [8][9][10][11][12][13] either leads to various randomly oriented domains [14] or to limited defect-free areas, and furthermore, they are typically very slow fabrication processes. In addition, a review

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• defect-free structures on highly mismatched substrates, e.g., GaN NWs on Si [7][8]. NWs usually possess high crystal quality due to the effective mechanical stress relaxation at a distance of about one NW base diameter from the substrate. Nanowires synthesized on Si are very promising nanostructures in

Patterning of supported gold monolayers via chemical lift-off lithography

• Liane S. Slaughter,
• Kevin M. Cheung,
• Sami Kaappa,
• Huan H. Cao,
• Qing Yang,
• Thomas D. Young,
• Andrew C. Serino,
• Sami Malola,
• Jana M. Olson,
• Stephan Link,
• Hannu Häkkinen,
• Anne M. Andrews and
• Paul S. Weiss

Beilstein J. Nanotechnol. 2017, 8, 2648–2661, doi:10.3762/bjnano.8.265

• -dimensional geometry [2]. Additionally, carboranethiols, which are known to form pristine and nearly defect-free SAMs [61][81][82], or molecules with additional interactions among the backbones, such as 3-mercapto-N-nonylpropionamide, which forms hydrogen-bonding networks [83][84], are hypothesized to

• number of vacancies equals the number of RS–Au–SR units. (B) Initially, a dense packing of individual butane thiolates occurs at the face-centered cubic sites of a defect-free Au{111} surface. The dashed vertical lines define the borders of each computational unit cell, i.e., in the figure there are two

A systematic study of the controlled generation of crystalline iron oxide nanoparticles on graphene using a chemical etching process

• Peter Krauß,
• Jörg Engstler and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2017, 8, 2017–2025, doi:10.3762/bjnano.8.202

• nanoparticles preferentially adsorb on graphene sites where multiple layers occur (Figure S4, Supporting Information File 1). These areas may provide additional binding sites for the nanoparticles since they act like edge structures on an atomically flat, defect-free, continuous graphene monolayer. To

Development of a nitrogen-doped 2D material for tribological applications in the boundary-lubrication regime

• Shende Rashmi Chandrabhan,
• Velayudhanpillai Jayan,
• Somendra Singh Parihar and
• Sundara Ramaprabhu

Beilstein J. Nanotechnol. 2017, 8, 1476–1483, doi:10.3762/bjnano.8.147

• corresponding to the G band. The lack of D band peaks in graphite implies that the graphite is defect-free. A shift of the G band of GO located at 1610 cm−1 is observed [40]. However, after reduction and nitrogen doping, the peak corresponding to the G band shifted back to 1589 cm−1, close to the value of

Synthesis of graphene–transition metal oxide hybrid nanoparticles and their application in various fields

• Arpita Jana,
• Elke Scheer and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2017, 8, 688–714, doi:10.3762/bjnano.8.74

Graphene functionalised by laser-ablated V₂O₅ for a highly sensitive NH₃ sensor

• Margus Kodu,
• Artjom Berholts,
• Tauno Kahro,
• Mati Kook,
• Peeter Ritslaid,
• Helina Seemen,
• Tea Avarmaa,
• Harry Alles and
• Raivo Jaaniso

Beilstein J. Nanotechnol. 2017, 8, 571–578, doi:10.3762/bjnano.8.61

• used in these experiments contains a relatively large concentration of defects of unspecified nature [35]. The role of graphene defects in the case of NH3 sensing is well illustrated by Lee et al. [31], where the response to NH3 gas increased by 600% after creation of defects in the pristine defect

• -free graphene by reactive ion etching. At the same time, the response to NO2 gas increased only by 33% [31]. We would like to point out that the graphene sensors functionalised by PLD with Ag and ZrO2 in our previous work [14] showed a much larger response to 1 ppm NO2 than to 20 ppm NH3 (see Table 1

Annealing-induced recovery of indents in thin Au(Fe) bilayer films

• Anna Kosinova,
• Ruth Schwaiger,
• Leonid Klinger and
• Eugen Rabkin

Beilstein J. Nanotechnol. 2016, 7, 2088–2099, doi:10.3762/bjnano.7.199

• energy of the system. Since a wide range of applications of thin metal films in the microelectronics requires featureless and defect-free surfaces, the knowledge of the effect of localized plastic strain on dewetting is of high practical importance. Surface and interface defects, such as grooves at grain

• nanoparticles results in their much faster equilibration, i.e., achieving the equilibrium crystal shape, during subsequent annealing as compared to their defect-free counterparts [13][14]. Recently, Amram and Rabkin [15] studied the role of Fe underlayers in the growth of quasi-single-crystalline

Scanning probe microscopy studies on the adsorption of selected molecular dyes on titania

• Jakub S. Prauzner-Bechcicki,
• Lukasz Zajac,
• Piotr Olszowski,
• Res Jöhr,
• Antoine Hinaut,
• Thilo Glatzel,
• Bartosz Such,
• Ernst Meyer and
• Marek Szymonski

Beilstein J. Nanotechnol. 2016, 7, 1642–1653, doi:10.3762/bjnano.7.156

• the defect-free areas and lay flat at the defect sites. For regions free of defects on the (210) surface, molecules are preferentially adsorbed at the step edges. In defect areas, the surface defects compete with the step edges to adsorb molecules. It seems that in each of these adsorption geometries

Fracture behaviors of pre-cracked monolayer molybdenum disulfide: A molecular dynamics study

• Qi-lin Xiong,
• Zhen-huan Li and
• Xiao-geng Tian

Beilstein J. Nanotechnol. 2016, 7, 1411–1420, doi:10.3762/bjnano.7.132

• the defect-free MoS2 sheets have been investigated by many researchers using different methods. Cooper et al. calculated the nonlinear elastic response of two-dimensional MoS2 with first-principles density functional theory (DFT) method [8]. Castellanos-Gomez et al. [9] performed bending test

• conductivity of defect-free SLMoS2 by using classical MDS. Dang et al. [16] used MDS with a reactive empirical bond order potential to study the mechanical deformation and failure of monolayer molybdenum disulfide under uniaxial and multiaxial tension. Zhao et al. [17] investigated the influence of temperature

• low temperatures by applying MDS [18]. Although there have been many studies on the mechanical properties of the defect-free MoS2 sheets, very few report about the investigation of the fracture behavior of the MoS2 sheets with pre-existing cracks can be found. Recently, Wang et al. [19] studied the

Assembling semiconducting molecules by covalent attachment to a lamellar crystalline polymer substrate

• Rainhard Machatschek,
• Patrick Ortmann,
• Renate Reiter,
• Stefan Mecking and
• Günter Reiter

Beilstein J. Nanotechnol. 2016, 7, 784–798, doi:10.3762/bjnano.7.70

• crystallization or dewetting may lead to films with a complex morphology that differs substantially from the homogeneous, closed and largely defect-free film, which is required for good charge transport. One has to take into account that differences in device morphology directly translate into differences in

• rather small [26] and melt crystallization of polyethylene is highly challenging [27], we employed an alternative method for growing large polymer single crystals, taking advantage of the dependence of the nucleation probability on local super-saturation. In order to grow defect-free and large single

Magnetic switching of nanoscale antidot lattices

• Ulf Wiedwald,
• Joachim Gräfe,
• Kristof M. Lebecki,
• Maxim Skripnik,
• Felix Haering,
• Gisela Schütz,
• Paul Ziemann,
• Eberhard Goering and
• Ulrich Nowak

Beilstein J. Nanotechnol. 2016, 7, 733–750, doi:10.3762/bjnano.7.65

• deposited films is limited to roughly half the antidot diameter, since the acetone-based chemo-mechanical polishing needs a sidewise access to the spheres allowing PS dissolution. Under best conditions, we achieve defect-free antidot lattices of 25 × 25 µm2. Thus, integral measurements like SQUID

Plasticity-mediated collapse and recrystallization in hollow copper nanowires: a molecular dynamics simulation

• Amlan Dutta,
• Arup Kumar Raychaudhuri and
• Tanusri Saha-Dasgupta

Beilstein J. Nanotechnol. 2016, 7, 228–235, doi:10.3762/bjnano.7.21

• growth of the stacking faults at the interface between the crystalline regions and the disordered atoms (cf. highlighted parts in Figure 2b). In comparison to the defect-free parts of the NW, recrystallization becomes more difficult at the boundaries of the stacking faults. Recrystallization at such a

Calculations of helium separation via uniform pores of stanene-based membranes

• Guoping Gao,
• Yan Jiao,
• Yalong Jiao,
• Fengxian Ma,
• Liangzhi Kou and
• Aijun Du

Beilstein J. Nanotechnol. 2015, 6, 2470–2476, doi:10.3762/bjnano.6.256

• by taking both diffusion and selectivity into account. Our results are the first calculations of He separation in a defect-free honeycomb lattice, highlighting new interesting materials for helium separation for future experimental validation. Keywords: fluorination; gas purification; honeycomb

Possibilities and limitations of advanced transmission electron microscopy for carbon-based nanomaterials

• Xiaoxing Ke,
• Carla Bittencourt and
• Gustaaf Van Tendeloo

Beilstein J. Nanotechnol. 2015, 6, 1541–1557, doi:10.3762/bjnano.6.158

• eV for incident electrons of 120 kV, 100 kV, 80 kV and 60 kV respectively. The threshold energy, Td, needed to displace a carbon atom has been calculated for defect-free graphene as an ideal case. Earlier results have reported a Td of 15 eV and 22 eV calculated statically and dynamically, as shown in

• , HRTEM on defect-free graphene at 100 kV causes damage to the sample, including pentagons, heptagons and octagons [35]. The experimental results clearly show that a Td of 23 eV and 22 eV (corresponding to an incident beam of approx. 110 kV) is overestimated. Such a difference may indicate that the

• diameters are more sensitive to knock-on damage. The message concluded from the literature study is that the knock-on threshold for defect-free graphene can be regarded to be 80 keV, although the dynamics of the carbon atoms cannot be entirely excluded. A lower voltage of 60 keV is generally safe for

Fabrication of high-resolution nanostructures of complex geometry by the single-spot nanolithography method

• Alexander Samardak,
• Margarita Anisimova,
• Aleksei Samardak and
• Alexey Ognev

Beilstein J. Nanotechnol. 2015, 6, 976–986, doi:10.3762/bjnano.6.101

• higher the resolution of the single-spot lithography. Another advantage is that the lines of patterned nanostructures are substantially defect-free, as shown in Figure 13. Our method enables the production of high-quality carbonized patterns of sub-20 nm resolution using the positive resist only. The

• resolution on semiconductor and metallized substrates using the single-spot nanofabrication was demonstrated at low-energy acceleration voltages. The resulting nanostructures have sharp edges and defect-free lines. Arrays of nanoelements or complex nanostructures can be easily scaled to large areas, with the

Magnetic properties of self-organized Co dimer nanolines on Si/Ag(110)

• Lisa Michez,
• Kai Chen,
• Fabien Cheynis,
• Frédéric Leroy,
• Alain Ranguis,
• Haik Jamgotchian,
• Margrit Hanbücken and
• Laurence Masson

Beilstein J. Nanotechnol. 2015, 6, 777–784, doi:10.3762/bjnano.6.80

• nanolines on top of the Si NRs, reproducing the 1D pattern of the Si template. This, however, is limited by defects induced by Co incorporation into the Si NRs [21]. In the experiments reported herein, Co was deposited at 220 K to kinetically block this Co incorporation process and obtain long, defect-free

• that of Co in-diffusion, Co deposition at a lower temperature was performed in the experiments presented here to form longer, defect-free, Co nanolines. The STM images in Figure 2a,b show the formation of identical and highly ordered Co dimer nanolines on the Ag(110) surface completely covered with the

Liquid-phase exfoliated graphene: functionalization, characterization, and applications

• Mildred Quintana,
• Jesús Iván Tapia and
• Maurizio Prato

Beilstein J. Nanotechnol. 2014, 5, 2328–2338, doi:10.3762/bjnano.5.242

• such as fullerenes and carbon nanotubes (CNTs) [23][24][25]. Using these solvents, it is possible to exfoliate graphite, resulting in defect-free graphene layers of high concentration. One limitation of this methodology is its inability to completely eliminate the absorbed solvent from the graphene

An insight into the mechanism of charge-transfer of hybrid polymer:ternary/quaternary chalcopyrite colloidal nanocrystals

• Parul Chawla,
• Son Singh and
• Shailesh Narain Sharma

Beilstein J. Nanotechnol. 2014, 5, 1235–1244, doi:10.3762/bjnano.5.137

• morphology crucially depends on a combination of highly crystalline and defect-free inorganic CISe and related materials as an acceptor layer and an ordered morphology and well-crystalline nature of P3HT polymer as a donor layer. In the present work, we have dispersed TOPO-capped CISe/CIGSe/CZTSe

Core level binding energies of functionalized and defective graphene

• Toma Susi,
• Markus Kaukonen,
• Paula Havu,
• Mathias P. Ljungberg,
• Paola Ayala and
• Esko I. Kauppinen

Beilstein J. Nanotechnol. 2014, 5, 121–132, doi:10.3762/bjnano.5.12

• should give consistent results for all atoms of the same kind. Since the C 1s level of graphite is well known experimentally, a rigid shift of the calculated energy scale to match it for the pristine defect-free system is applied to all C 1s energies calculated, which allows for a comparison of the

Cyclic photochemical re-growth of gold nanoparticles: Overcoming the mask-erosion limit during reactive ion etching on the nanoscale

• Burcin Özdemir,
• Axel Seidenstücker,
• Alfred Plettl and
• Paul Ziemann

Beilstein J. Nanotechnol. 2013, 4, 886–894, doi:10.3762/bjnano.4.100

• distance within a given periodic arrangement. 5) The maximizing of defect-free domain sizes of such NP lattices. A relative simple and affordable approach that nevertheless addresses all the above requirements is based on the self-organization of organic carrier systems such as colloids or reverse micelles

Deformation-induced grain growth and twinning in nanocrystalline palladium thin films

• Aaron Kobler,
• Jochen Lohmiller,
• Jonathan Schäfer,
• Michael Kerber,
• Anna Castrup,
• Ankush Kashiwar,
• Patric A. Gruber,
• Karsten Albe,
• Horst Hahn and
• Christian Kübel

Beilstein J. Nanotechnol. 2013, 4, 554–566, doi:10.3762/bjnano.4.64

• shown). In contrast, samples with an initially defect free grain interior showed an increase of the twin boundary density during straining (Figure 7c,d). Twins nucleate at the grain boundaries under an applied stress by emission of partial dislocations, which lead to stacking faults and eventually twin

• initial growth twin density, partial dislocations nucleate preferentially at the twin boundaries and lead to movement and thus a reduction of twin boundaries [35]. If no twin boundaries are present, partial dislocations need to nucleate from the grain boundaries into defect free grains and may form

• migration out of the grain. If the grains are initially defect free, partial dislocations nucleate into a defect free grain and can form stacking faults and twinning faults by successive nucleation of partial dislocations. Overview of the structural properties of the three ncPd sample sets analyzed using

High-resolution electrical and chemical characterization of nm-scale organic and inorganic devices

• Pierre Eyben

Beilstein J. Nanotechnol. 2013, 4, 318–319, doi:10.3762/bjnano.4.35

• , threading dislocations, and microtwins that affect the diffusion of dopants and the material mobility (due to scattering). When growth is performed in narrow trenches, dislocations are trapped within the confined volume (aspect-ratio trapping) and, theoretically, defect-free layers can be obtained. However

• , even if an apparently defect-free layer is obtained, the polar nature of the complex compound materials implies that antiphase boundaries can still be formed, which potentially represent important charge and recombination centers. Beyond the standard logic/memory applications there is a very strong