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Search for "electronic transport" in Full Text gives 59 result(s) in Beilstein Journal of Nanotechnology.

L-Lysine-grafted graphene oxide as an effective adsorbent for the removal of methylene blue and metal ions

  • Yan Yan,
  • Jie Li,
  • Fangbei Kong,
  • Kuankuan Jia,
  • Shiyu He and
  • Baorong Wang

Beilstein J. Nanotechnol. 2017, 8, 2680–2688, doi:10.3762/bjnano.8.268

Graphical Abstract
  • attention because of their huge specific surface area, extraordinary electronic transport properties and unique adsorption properties [1][2][3]. These materials have important applications in many fields, including physics [4], electrochemistry [5], environmental science [6] and catalysis [7]. For example
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Published 13 Dec 2017

Inelastic electron tunneling spectroscopy of difurylethene-based photochromic single-molecule junctions

  • Youngsang Kim,
  • Safa G. Bahoosh,
  • Dmytro Sysoiev,
  • Thomas Huhn,
  • Fabian Pauly and
  • Elke Scheer

Beilstein J. Nanotechnol. 2017, 8, 2606–2614, doi:10.3762/bjnano.8.261

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  • electronic transport. Furthermore, the relatively small difference in conductance of the open and the closed form is understandable from the presence of these alkyl tunneling barriers that limit the total conductance in the closed form and in a simplistic picture might be considered as series resistances
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Published 06 Dec 2017

Electronic structure, transport, and collective effects in molecular layered systems

  • Torsten Hahn,
  • Tim Ludwig,
  • Carsten Timm and
  • Jens Kortus

Beilstein J. Nanotechnol. 2017, 8, 2094–2105, doi:10.3762/bjnano.8.209

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  • included. The geometry of the molecules was optimized using a gradient approach, the relaxation was terminated once all atomic were below 0.05 eV/Å. We applied the NEGF method for the self-consistent calculation of the electronic transport properties as implemented in the GPAW code [20][21] to investigate
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Published 06 Oct 2017

Spin-dependent transport and functional design in organic ferromagnetic devices

  • Guichao Hu,
  • Shijie Xie,
  • Chuankui Wang and
  • Carsten Timm

Beilstein J. Nanotechnol. 2017, 8, 1919–1931, doi:10.3762/bjnano.8.192

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  • ferromagnetic devices. A related field involves single molecular magnets (SMMs). Extensive experimental and theoretical studies have demonstrated the realization of functional devices based on SMMs, such as molecular switches and negative differential resistance [17][18][19][20][21][22][23][24]. Electronic
  • transport in organic magnets has also been studied. Yoo et al. [25] have experimentally demonstrated the magnetic response of V[TCNE]x-based devices (TCNE stands for tetracyanoethylene) by connecting the organic magnet to gold electrodes. Li et al. [26] have investigated the magnetoresistance effect in
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Published 13 Sep 2017

Transport characteristics of a silicene nanoribbon on Ag(110)

  • Ryoichi Hiraoka,
  • Chun-Liang Lin,
  • Kotaro Nakamura,
  • Ryo Nagao,
  • Maki Kawai,
  • Ryuichi Arafune and
  • Noriaki Takagi

Beilstein J. Nanotechnol. 2017, 8, 1699–1704, doi:10.3762/bjnano.8.170

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  • discuss the origin of the peak as it relates to the SiNR. Keywords: nanojunction; nanoribbon; scanning tunnelling microscopy; silicene; transport; Introduction The electronic transport characteristics of nanomaterials from a single molecule, nanowires, nanotubes, and nanoribbons to two-dimensional (2D
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Published 16 Aug 2017

Group-13 and group-15 doping of germanane

  • Nicholas D. Cultrara,
  • Maxx Q. Arguilla,
  • Shishi Jiang,
  • Chuanchuan Sun,
  • Michael R. Scudder,
  • R. Dominic Ross and
  • Joshua E. Goldberger

Beilstein J. Nanotechnol. 2017, 8, 1642–1648, doi:10.3762/bjnano.8.164

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  • group-15 element As, can be successfully doped into a precursor CaGe2 phase, and remain intact in the lattice after the topotactic deintercalation, using HCl, to form GeH. After deintercalation, a maximum of 1.1% As and 2.3% Ga can be substituted into the germanium lattice. Electronic transport
  • lattice of the CaGe2 precursor [29][31]. Providing that these elements are retained in the germanium framework after the topotactic deintercalation process, the effect on the electronic transport behavior of GeH should be appreciable. Having previously grown phosphorus-doped GeH (P:GeH) [29] using this
  • oxidation of As occurs. The As 2p3/2 peak centered at 1323 eV in as-grown As:GeH starts disappearing in favor of a 1326.1 eV [35] oxidized state. The effect of dopants on the electronic transport of single-crystal flakes of Ga:GeH and As:GeH were measured with contacts fabricated by using a shadow mask
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Published 09 Aug 2017

Growth, structure and stability of sputter-deposited MoS2 thin films

  • Reinhard Kaindl,
  • Bernhard C. Bayer,
  • Roland Resel,
  • Thomas Müller,
  • Viera Skakalova,
  • Gerlinde Habler,
  • Rainer Abart,
  • Alexey S. Cherevan,
  • Dominik Eder,
  • Maxime Blatter,
  • Fabian Fischer,
  • Jannik C. Meyer,
  • Dmitry K. Polyushkin and
  • Wolfgang Waldhauser

Beilstein J. Nanotechnol. 2017, 8, 1115–1126, doi:10.3762/bjnano.8.113

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  • measurements on our films to confirm trace contaminations, the increased interlayer distance in our 400 °C films observed in XRD could suggest that additional add-elements may (partly) be intercalated between individual MoS2 layers and thus alter electronic transport properties of the PVD films. Third, and
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Published 22 May 2017

Synthesis of graphene–transition metal oxide hybrid nanoparticles and their application in various fields

  • Arpita Jana,
  • Elke Scheer and
  • Sebastian Polarz

Beilstein J. Nanotechnol. 2017, 8, 688–714, doi:10.3762/bjnano.8.74

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  • ), sensors, photocatalysts, removal of organic pollutants, etc. Recent studies have shown that a single graphene sheet (GS) has extraordinary electronic transport properties. One possible route to connecting those properties for application in electronics would be to prepare graphene-wrapped TMO NPs. In this
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Published 24 Mar 2017

Zigzag phosphorene nanoribbons: one-dimensional resonant channels in two-dimensional atomic crystals

  • Carlos. J. Páez,
  • Dario. A. Bahamon,
  • Ana L. C. Pereira and
  • Peter. A. Schulz

Beilstein J. Nanotechnol. 2016, 7, 1983–1990, doi:10.3762/bjnano.7.189

Graphical Abstract
  • phosphorene constrictions of the same length (Figure 5b,c). The resonant peaks appear at the energies of the infinite square-well energies En = 2t1D + 2t1D cos(nπ/(L + 1)) for n = 1, 2,…, L. To recap, the edge states at opposite edges provide one-dimensional electronic transport channels embedded in a two
  • detailed study of the charging effects is left for future work. It is inevitable to compare our results with those obtained for graphene constrictions. Both zigzag graphene and phosphorene nanoribbons support edge states. However, their signatures on the electronic transport properties are completely
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Published 13 Dec 2016

Role of solvents in the electronic transport properties of single-molecule junctions

  • Katharina Luka-Guth,
  • Sebastian Hambsch,
  • Andreas Bloch,
  • Philipp Ehrenreich,
  • Bernd Michael Briechle,
  • Filip Kilibarda,
  • Torsten Sendler,
  • Dmytro Sysoiev,
  • Thomas Huhn,
  • Artur Erbe and
  • Elke Scheer

Beilstein J. Nanotechnol. 2016, 7, 1055–1067, doi:10.3762/bjnano.7.99

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  • controllable break junction; molecular electronics; polar solvent; single-molecule junctions; Introduction The electronic transport properties of single-molecule junctions are actively investigated with the aim to utilize such junctions as functional building blocks in electronic devices [1][2][3][4][5][6][7
  • (resonant)-level transport model (SLM) describes similar shapes in the low- to intermediate-voltage range. The SLM, based on the Landauer picture of electronic transport [2][33], is valid in the case of coherent transport [2][33]. It describes the current as the energy integral over the energy and voltage
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Published 22 Jul 2016

First-principles study of the structure of water layers on flat and stepped Pb electrodes

  • Xiaohang Lin,
  • Ferdinand Evers and
  • Axel Groß

Beilstein J. Nanotechnol. 2016, 7, 533–543, doi:10.3762/bjnano.7.47

Graphical Abstract
  • stepped Ag and Au surfaces. Because of the weak Pb–water interaction apparent in the calculations it should be expected that the presence of water only has a weak influence of the microscopic mechanism leading to the formation of the atomic switch. The same should be true as far as the electronic
  • transport properties of the switch are concerned. Acknowledgements Financial support by the Baden-Württemberg Foundation through the project C3 within the network “Functional Nanostructures” is gratefully acknowledged. Computational resources have been provided by the bwHPC5 project of the Federal State of
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Published 11 Apr 2016

Charge and heat transport in soft nanosystems in the presence of time-dependent perturbations

  • Alberto Nocera,
  • Carmine Antonio Perroni,
  • Vincenzo Marigliano Ramaglia and
  • Vittorio Cataudella

Beilstein J. Nanotechnol. 2016, 7, 439–464, doi:10.3762/bjnano.7.39

Graphical Abstract
  • the electronic response, but it also induces nonlinear regimes where the interplay between electronic and vibrational degrees of freedom plays a major role. Keywords: electronic charge quantum pumping; electronic transport theory; nanoelectromechanical systems; thermoelectric properties; time
  • displacement and acquire an explicit periodic dependence on time. We have treated distinct systems in our unified approach. In particular we have studied the electronic transport properties at finite bias of a NEMS device consisting of a vibrating suspended CNT actuated by an external antenna. In this setup
  • approach we observe that, if one increases the characteristic energy of the vibrational mode, the area of validity of the semiclassical adiabatic approximation shrinks. 4 Charge and heat transport In this section we analyze the electronic transport properties of our quantum dot (or molecule) in the regime
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Published 18 Mar 2016

Nonconservative current-driven dynamics: beyond the nanoscale

  • Brian Cunningham,
  • Tchavdar N. Todorov and
  • Daniel Dundas

Beilstein J. Nanotechnol. 2015, 6, 2140–2147, doi:10.3762/bjnano.6.219

Graphical Abstract
  • the current-induced parts of this matrix in metallic systems are long-ranged, especially at low bias. This nonlocality is essential for the characterisation of nonconservative atomic dynamics under current beyond the nanoscale. Keywords: atomic-scale conductors; current-induced forces; electronic
  • transport; failure mechanisms; nanoelectronic devices; nanomotors; Introduction The development of electronic devices at the nanoscale is a challenging avenue of research with the aim of improving their efficiency and performance. This requires an understanding of the mechanisms for energy transfer from
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Published 13 Nov 2015

High Ion/Ioff current ratio graphene field effect transistor: the role of line defect

  • Mohammad Hadi Tajarrod and
  • Hassan Rasooli Saghai

Beilstein J. Nanotechnol. 2015, 6, 2062–2068, doi:10.3762/bjnano.6.210

Graphical Abstract
  • of its unique electronic transport properties. The properties of graphene such ultra-thin body properties for optimum electrostatic scaling and excellent thermal conductivity has made it a potential alternative to silicon and facilitated the manufacture of devices [1][2]. Furthermore, the high
  • along the edge of zigzag nanoribbons. There are also studies on the line defects in armchair nanoribbons [16][17]. The research into divacancies and ELD in armchair nanoribbons shows that the presence of divacancy defects has significant impacts on the band structure and electronic transport properties
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Published 23 Oct 2015

Large-voltage behavior of charge transport characteristics in nanosystems with weak electron–vibration coupling

  • Tomáš Novotný and
  • Wolfgang Belzig

Beilstein J. Nanotechnol. 2015, 6, 1853–1859, doi:10.3762/bjnano.6.188

Graphical Abstract
  • ]. Here, we show that also the model of electronic transport through a nanostructure with weak electron–vibrational interaction can be solved exactly in the large-voltage limit with the input of only a few microscopically-derived parameters which can be evaluated (semi)analytically. The solution is not
  • . Conclusion We have shown by a physically intuitive approach that the large-voltage asymptotics of electronic transport statistics through a nanosystem with weak electron-vibrational interaction can be determined from the classical stochastic dynamics of the vibrational occupation number. Equation 19 yielding
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Published 03 Sep 2015

Simple and efficient way of speeding up transmission calculations with k-point sampling

  • Jesper Toft Falkenberg and
  • Mads Brandbyge

Beilstein J. Nanotechnol. 2015, 6, 1603–1608, doi:10.3762/bjnano.6.164

Graphical Abstract
  • -processing; shortest-path; Introduction Calculations of electronic conductance based on first principle methods such as density functional theory (DFT) provide a valuable tool in order to gain insights into electronic transport in nano-conductors and comparison to experiments without employing fitting
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Published 24 Jul 2015

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

  • Aleksandra Szkudlarek,
  • Alfredo Rodrigues Vaz,
  • Yucheng Zhang,
  • Andrzej Rudkowski,
  • Czesław Kapusta,
  • Rolf Erni,
  • Stanislav Moshkalev and
  • Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

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  • the insulating transport regime for granular materials, as it was observed previously for various FEBID deposits, composed of metallic grains embedded in carbonaceous matrix [49]. More detailed studies are planned to characterize the electronic transport of this material including the question whether
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Published 13 Jul 2015

Electrical characterization of single molecule and Langmuir–Blodgett monomolecular films of a pyridine-terminated oligo(phenylene-ethynylene) derivative

  • Henrry M. Osorio,
  • Santiago Martín,
  • María Carmen López,
  • Santiago Marqués-González,
  • Simon J. Higgins,
  • Richard J. Nichols,
  • Paul J. Low and
  • Pilar Cea

Beilstein J. Nanotechnol. 2015, 6, 1145–1157, doi:10.3762/bjnano.6.116

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  • interactions, for example, van der Waals interactions and polarization effects in electronic transport properties [22][23][24]. In addition, planar-sandwiched monolayer structures are more closely aligned with practical electronic applications. Three main techniques have been used to fabricate molecular
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Published 11 May 2015

Entropy effects in the collective dynamic behavior of alkyl monolayers tethered to Si(111)

  • Christian Godet

Beilstein J. Nanotechnol. 2015, 6, 583–594, doi:10.3762/bjnano.6.60

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  • surface chemistry, surface energy, biocompatibility, friction, corrosion, liquid chromatography, interfacial interactions and electronic transport [1][2][3][4][5][6]. More recent studies have been focused on the functionalization of nanostructures. However, in spite of a large number of experimental and
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Published 26 Feb 2015

Advances in NO2 sensing with individual single-walled carbon nanotube transistors

  • Kiran Chikkadi,
  • Matthias Muoth,
  • Cosmin Roman,
  • Miroslav Haluska and
  • Christofer Hierold

Beilstein J. Nanotechnol. 2014, 5, 2179–2191, doi:10.3762/bjnano.5.227

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  • the theoretical and experimental achievements of the past few years in understanding the interaction of individual, single-walled carbon nanotubes with their environment. First, a summary of the effects of adsorbate molecules on electronic transport is presented, after which the effect of nearby
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Published 20 Nov 2014

Silicon and germanium nanocrystals: properties and characterization

  • Ivana Capan,
  • Alexandra Carvalho and
  • José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

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  • to solve by first-principles the all-electron problem of systems with a few thousands of atoms [17]. This has led to the understanding of more complex problems such as doping [18][19][20], and electronic transport across NC solids [21][22]. These are among the advances that will be reviewed below. II
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Published 16 Oct 2014

Numerical investigation of the effect of substrate surface roughness on the performance of zigzag graphene nanoribbon field effect transistors symmetrically doped with BN

  • Majid Sanaeepur,
  • Arash Yazdanpanah Goharrizi and
  • Mohammad Javad Sharifi

Beilstein J. Nanotechnol. 2014, 5, 1569–1574, doi:10.3762/bjnano.5.168

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  • on the performance of graphene devices, three common substrate materials (SiO2, BN and mica) are examined. Rough surfaces are generated by means of a Gaussian auto-correlation function. Electronic transport simulations are performed in the framework of tight-binding Hamiltonian and non-equilibrium
  • with SR amplitudes of approximately 168–360, 75 and 24 pm, respectively, are considered [27][30][31]. Rough surfaces are generated by means of Gaussian auto-correlation functions [32][33]. The electronic transport calculations are performed in the framework of a non-equilibrium Green's function and
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Published 17 Sep 2014

Probing the electronic transport on the reconstructed Au/Ge(001) surface

  • Franciszek Krok,
  • Mark R. Kaspers,
  • Alexander M. Bernhart,
  • Marek Nikiel,
  • Benedykt R. Jany,
  • Paulina Indyka,
  • Mateusz Wojtaszek,
  • Rolf Möller and
  • Christian A. Bobisch

Beilstein J. Nanotechnol. 2014, 5, 1463–1471, doi:10.3762/bjnano.5.159

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  • transport channel for electrons. Keywords: Au on Ge(001); electronic transport; multi probe STM; scanning tunnelling potentiometry; Introduction Structures consisting of single atoms represent the lower spatial limit for electronic circuits. On such a small scale, the electronic structure is dominated by
  • for both cases are shown in Figure 6c. Conclusion In conclusion, we find that the electronic transport properties of the system Au/Ge(001) are not only given by the atomic wire-like surface structure exhibiting a Tomonaga–Luttinger behavior, but also by a 2D conductive layer underneath the surface
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Published 05 Sep 2014

Sublattice asymmetry of impurity doping in graphene: A review

  • James A. Lawlor and
  • Mauro S. Ferreira

Beilstein J. Nanotechnol. 2014, 5, 1210–1217, doi:10.3762/bjnano.5.133

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  • for synthesis of such graphene monolayers and detail theoretical efforts to explain the mechanisms responsible for the effect, before suggesting future research directions in this nascent field. Keywords: band gap; electronic transport; graphene; nitrogen doping; sublattice asymmetry; Review
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Published 05 Aug 2014

Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

  • Gabriele Fisichella,
  • Salvatore Di Franco,
  • Patrick Fiorenza,
  • Raffaella Lo Nigro,
  • Fabrizio Roccaforte,
  • Cristina Tudisco,
  • Guido G. Condorelli,
  • Nicolò Piluso,
  • Noemi Spartà,
  • Stella Lo Verso,
  • Corrado Accardi,
  • Cristina Tringali,
  • Sebastiano Ravesi and
  • Filippo Giannazzo

Beilstein J. Nanotechnol. 2013, 4, 234–242, doi:10.3762/bjnano.4.24

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  • graphene on SiO2 [22]. Both cracks and corrugations contribute to the degradation of the electronic transport properties in graphene [23]. Graphene transfer onto PEN In contrast to the case of virgin SiO2, which is naturally hydrophilic and requires proper treatments to be converted into a hydrophobic
  • between the two materials. Results and Discussion Microscale electrical characterization The electronic transport properties of the large-area graphene transferred onto the two different substrates have been characterized on the macroscopic scale by electrical measurements on transmission line model (TLM
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Published 02 Apr 2013
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