Temperature-dependent Raman spectroscopy and sensor applications of PtSe₂ nanosheets synthesized by wet chemistry

• Mahendra S. Pawar and
• Dattatray J. Late

Beilstein J. Nanotechnol. 2019, 10, 467–474, doi:10.3762/bjnano.10.46

• due to its extraordinary optical, electrical, mechanical, magnetic and chemical properties [2][3][4][5]. Like graphene and its organic analogues [6], inorganic 2D metal dichalcogenides also exhibit outstanding performance in many applications including transistors, sensors, photodetectors, solar cells

Advanced scanning probe lithography using anatase-to-rutile transition to create localized TiO₂ nanorods

• Julian Kalb,
• Vanessa Knittel and
• Lukas Schmidt-Mende

Beilstein J. Nanotechnol. 2019, 10, 412–418, doi:10.3762/bjnano.10.40

• optoelectronic characteristics. The fabrication of nanostructured TiO2 is inexpensive and hence employed in many applications such as photodetectors [2], photovoltaics [3][4][5][6], photocatalysis [7][8][9][10][11], surficial disinfection [12], biosensing [13], gas sensing [14][15][16], dewetting [17][18][19

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• . It is shown that isovalent doping of GaAs potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV. Keywords: infrared photodetectors; ion-beam deposition; nanoheterostructures; photoluminescence; quantum dot; semiconductors

• ; Introduction The formation of III–V nanoheterostructures with quantum dots (QDs) raises the possibility of developing a new generation of photodetectors in the infrared range [1][2][3]. The significant problems of existing HgCdTe detectors are low yield and high cost in comparison with quantum-well infrared

• photodetectors (QWIPs) [4]. The QWIPs, in turn, have a simpler technology but a low quantum efficiency and require cooling. One way to solve these problems is to grow semiconductor heterostructures in which QDs are embedded. The localization of photogenerated charge carriers in a quantum dot along three

Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

• Nan Guan,
• Andrey Babichev,
• Martin Foldyna,
• Dmitry Denisov,
• François H. Julien and
• Maria Tchernycheva

Beilstein J. Nanotechnol. 2018, 9, 2248–2254, doi:10.3762/bjnano.9.209

• [19]. Single NW photodetectors based on the photoconductive operation principle [20] or p–n junction photodiodes [21] have demonstrated high sensitivity. For these reasons, single NW components are considered as promising building blocks for integration with SiN photonic platforms. For the wafer-scale

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

• other areas, in particular as light emitters for LEDs, laser applications and in photodetectors [28][29][30][31][35][43][47][50][52][53][54]. The versatility of the possible optoelectronic applications of Pb-HPs has stimulated an explosive progress in preparative chemistry and photophysics of HP

• UV photodetectors than for the photovoltaic applications. The organo–inorganic iodobismuthates C5H6NBiI4, C6H8NBiI4 and (C6H13N)2BiI5 displayed bandgaps of around 2 eV and stability under the ambient conditions [171][172]. Aromatic cations were found to contribute to the conduction band of these

• photodetectors [174]. The search for new lead-free HPs based on M3+ cations continues on. It often starts from the theoretical estimation of the stability, structure and optoelectronic properties of various HPs and selection of the most promising ones, stimulating further experimental work. For example, a broad

Multimodal noncontact atomic force microscopy and Kelvin probe force microscopy investigations of organolead tribromide perovskite single crystals

• Yann Almadori,
• David Moerman,
• Jaume Llacer Martinez,
• Philippe Leclère and
• Benjamin Grévin

Beilstein J. Nanotechnol. 2018, 9, 1695–1704, doi:10.3762/bjnano.9.161

• conversion efficiencies exceeding 20% and several kinds of optoelectronic devices, including efficient light-emitting diodes [3], laser devices [4] and high-gain photodetectors [5]. Recently, Kelvin probe force microscopy (KPFM) has been used to investigate the impact of grain boundaries (GBs) on the

New 2D graphene hybrid composites as an effective base element of optical nanodevices

• Olga E. Glukhova,
• Igor S. Nefedov,
• Alexander S. Shalin and
• Мichael М. Slepchenkov

Beilstein J. Nanotechnol. 2018, 9, 1321–1327, doi:10.3762/bjnano.9.125

• little investigated modifications of graphene is a 2D-hybrid composite composed of graphene monolayers and CNTs covalently bonded to them [5][6][7][8]. The hybrid 2D film exhibits high performance as photosensitive element of photodetectors in the range of 100–700 nm. It was found that a single photon

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot

• Tarek A. Ameen,
• Hesameddin Ilatikhameneh,
• Archana Tankasala,
• Yuling Hsueh,
• James Charles,
• Jim Fonseca,
• Michael Povolotskyi,
• Jun Oh Kim,
• Sanjay Krishna,
• Monica S. Allen,
• Jeffery W. Allen,
• Rajib Rahman and
• Gerhard Klimeck

Beilstein J. Nanotechnol. 2018, 9, 1075–1084, doi:10.3762/bjnano.9.99

• absorption; quantum qot filling; self-assembled quantum dots; semi-empirical tight-binding; sp3d5s* with spin–orbit coupling (sp3d5s*_SO); Introduction Self-assembled quantum dots are employed as light absorbers in many optoelectronic devices, such as quantum-dot infrared photodetectors (QDIPs) [1][2], and

Optical contrast and refractive index of natural van der Waals heterostructure nanosheets of franckeite

• Patricia Gant,
• Foad Ghasemi,
• David Maeso,
• Carmen Munuera,
• Elena López-Elvira,
• Riccardo Frisenda,
• David Pérez De Lara,
• Gabino Rubio-Bollinger,
• Mar Garcia-Hernandez and
• Andres Castellanos-Gomez

Beilstein J. Nanotechnol. 2017, 8, 2357–2362, doi:10.3762/bjnano.8.235

• adsorbates between the layers. Very recently Molina-Mendoza et al. demonstrated mechanical and liquid-phase exfoliation of franckeite down to 3–4 unit cells and they fabricated field-effect devices, near infrared photodetectors and PN junctions [15]. Also, Velický et al. isolated single unit cell nanosheets

Optical response of heterogeneous polymer layers containing silver nanostructures

• Miriam Carlberg,
• Florent Pourcin,
• Olivier Margeat,
• Judikaël Le Rouzo,
• Gérard Berginc,
• Rose-Marie Sauvage,
• Jörg Ackermann and
• Ludovic Escoubas

Beilstein J. Nanotechnol. 2017, 8, 1065–1072, doi:10.3762/bjnano.8.108

• NPs, the thin film layers will absorb in the visible wavelength range. This leads to applications of plasmonic thin film layers for photodetectors [10], photovoltaics [6][11] or nonreflective coatings [12][13][14]. In this works, silver NPs were chosen for their high electric field enhancement in the

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

• Ionel Stavarache,
• Valentin Adrian Maraloiu,
• Petronela Prepelita and
• Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

• devices individually or with other materials, hence the possibility of fabricating various heterojunctions on Si, glass or flexible substrates for future development of Si-based integrated optoelectronics. Keywords: germanium nanoparticle; photocurrent; photodetectors; response time; transport mechanism

• be fully described only through Ge-nps size. Ge-nps embedded in different dielectric matrices (e.g., SiO2, Si3N4 or HfO2) have been already used for fabrication of high-efficiency photodetectors [15], multilayer memory devices [16] and other applications as solar photoconversion cells [17], batteries

• dark current and dark current density, respectively. The detectivity (D*) value is estimated in the range of 1015 Jones at about 1040 nm, which is comparable with that of ZnO nanoparticles-based photodetectors (D* ≈ 3.4 × 1015 Jones at 360 nm) [47]. The broad wavelength range (from about 450 to 1300 nm

Blue and white light emission from zinc oxide nanoforests

• Nafisa Noor,
• Luca Lucera,
• Thomas Capuano,
• Venkata Manthina,
• Alexander G. Agrios,
• Helena Silva and
• Ali Gokirmak

Beilstein J. Nanotechnol. 2015, 6, 2463–2469, doi:10.3762/bjnano.6.255

• gap semiconductor (≈3.4 eV) with large exciton binding energy (60 meV). ZnO nanowires have been shown to yield stimulated emission with optical pumping (e.g., nanowire laser) [4] and have been demonstrated as photodetectors [5]. ZnO films have also been used in transparent thin film transistors [6

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

• ], thermal sensors [8], photodetectors [9], and mode stabilizers for vertical surface emitting lasers [10]. Other deposits were used as ferromagnetic wires [11][12], superconducting wires [13], plasmonic structures [14], or as electrode nanocontacts [15][16]. The feasibility of obtaining 3D nanostructures

The Kirkendall effect and nanoscience: hollow nanospheres and nanotubes

• Abdel-Aziz El Mel,
• Ryusuke Nakamura and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2015, 6, 1348–1361, doi:10.3762/bjnano.6.139

• biotechnology [8], batteries [9][10][11][12][13], sensors [14][15][16], catalysis [17][18][19], photodetectors [20], electrochromic devices [21] and supercapacitors [22]. Three years after the pioneering work of Yin et al. [7], the progress in the synthesis of nanotubes and hollow nanoparticles using the

Graphene quantum interference photodetector

• Mahbub Alam and
• Paul L. Voss

Beilstein J. Nanotechnol. 2015, 6, 726–735, doi:10.3762/bjnano.6.74

• flux in one or both of the interferometer arms in the same MZI structure. Graphene QI photodetectors have several distinct advantages: they are of very small size, they do not require p- and n-doped regions, and they exhibit a high external quantum efficiency. Keywords: decoherence; graphene

• states. In this paper we investigate for the first time the interaction of light in a graphene nanoribbon MZI structure and specifically we study the coupling of light between longitudinal resonant modes for both zigzag and armchair structures. Graphene photodetectors have been studied in detail [2][3

• ][17][18][19]. The primary distinguishing features of graphene photodetectors are: photodetection over a wide spectral range from infrared to ultraviolet wavelengths, a transit-time-limited bandwidth of approximately 1.5 THz and a high internal quantum efficiency of 15–30% [2][3][19]. The photocurrent

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

• Carla Aramo,
• Antonio Ambrosio,
• Michelangelo Ambrosio,
• Maurizio Boscardin,
• Paola Castrucci,
• Michele Crivellari,
• Marco Cilmo,
• Maurizio De Crescenzi,
• Francesco De Nicola,
• Emanuele Fiandrini,
• Valentina Grossi,
• Pasqualino Maddalena,
• Maurizio Passacantando,
• Sandro Santucci,
• Manuela Scarselli and
• Antonio Valentini

Beilstein J. Nanotechnol. 2015, 6, 704–710, doi:10.3762/bjnano.6.71

• the efficiency of the detector for near-ultraviolet radiation is well above that of the Si photodetectors. This effect was observed in several similar devices as reported in [13][15][16][17]. However, in this report, there are some relevant, new aspects to be noted. The first one is that the EQE of

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

• Domenico Melisi,
• Maria Angela Nitti,
• Marco Valentini,
• Antonio Valentini,
• Teresa Ligonzo,
• Giuseppe De Pascali and
• Marianna Ambrico

Beilstein J. Nanotechnol. 2014, 5, 1999–2006, doi:10.3762/bjnano.5.208

• light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed. Keywords: multi-wall carbon nanotubes; photodetectors

• (CNTs) in this field have shown interesting results, in particular in new technologically advanced nanoelectronic devices [4][5]. Photodetectors based on films of CNTs (both bundle and carpet distribution) on silicon, have been previously analyzed in the visible and IR spectral regions [6][7]. Moreover

• deposition technique for depositing CNTs on silicon, starting from a powder, at low temperatures, without catalyst and an intermediate layer [7]. By using this spray technique, CNT films on silicon-based photodetectors were prepared, achieving quantum efficiency (QE) values in the visible light range

Room temperature, ppb-level NO₂ gas sensing of multiple-networked ZnSe nanowire sensors under UV illumination

• Sunghoon Park,
• Soohyun Kim,
• Wan In Lee,
• Kyoung-Kook Kim and
• Chongmu Lee

Beilstein J. Nanotechnol. 2014, 5, 1836–1841, doi:10.3762/bjnano.5.194

• diodes [5] and UV photodetectors [6]. On the other hand, there are almost no reports on the gas sensing properties of ZnSe. This might be due to the decomposition and oxidation of ZnSe at temperatures above 200 °C [7] and a lack of good sensing performance at room temperature. In recent years, one

Surface processes during purification of InP quantum dots

• Natalia Mordvinova,
• Pavel Emelin,
• Alexander Vinokurov,
• Sergey Dorofeev,
• Artem Abakumov and
• Tatiana Kuznetsova

Beilstein J. Nanotechnol. 2014, 5, 1220–1225, doi:10.3762/bjnano.5.135

• last two decades due to their unique size-dependent optical properties and their potential applications in the areas of photoluminescent devices, light-emitting diodes, displays, photodetectors, photovoltaic devices, solar cells and biological imaging [1][2]. III–V Nanocrystals are of increasing

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

• Jinzhang Liu,
• Nunzio Motta and
• Soonil Lee

Beilstein J. Nanotechnol. 2012, 3, 353–359, doi:10.3762/bjnano.3.41

• , including light-emitting diodes, laser diodes, and photodetectors for the ultraviolet (UV) spectral range [1][2]. ZnO nanostructures are particularly interesting as they bear superior properties compared to the bulk crystal. UV-light detection is one of the major applications of ZnO, and various UV

• photodetectors based on ZnO films or nanocrystals have been reported. It has been demonstrated that ZnO nanowires have high internal photoconduction gain and much stronger responsivity under UV-light illumination compared to the bulk film [3]. The UV photoresponse mechanism of ZnO nanowires is dominated by the

• block the UV light. Moreover, carbon-based polymers undergo oxidation with ageing, and the degradation could be expedited by the absorption of UV light. In this paper, we report results of experiments on UV photodetectors based on a thin sheet of ZnO nanowires embedded in polydimethylsiloxane (PDMS