Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

• Petronela Prepelita,
• Ionel Stavarache,
• Doina Craciun,
• Florin Garoi,
• Catalin Negrila,
• Beatrice Gabriela Sbarcea and
• Valentin Craciun

Beilstein J. Nanotechnol. 2019, 10, 1511–1522, doi:10.3762/bjnano.10.149

• , P.O. Box MG-7, Magurele 077125, Ilfov, Romania ICPE-CA, Splaiul Unirii 313, Sector 3, 74204, Bucharest, Romania Dentix MILLENNIUM SRL, Sabareni-Ilfov, Romania 10.3762/bjnano.10.149 Abstract In this work, rapid thermal annealing (RTA) was applied to indium tin oxide (ITO) films in ambient atmosphere

• treatment in an open atmosphere. Such films could be used to manufacture transparent contact electrodes for solar cells. Keywords: conductive transparent electrodes; indium tin oxide (ITO) films; optical properties; radio-frequency magnetron sputtering (rfMS); rapid thermal annealing (RTA); Introduction

• desired structure. In this paper, the influence of rapid thermal annealing (RTA) on the structure and optical properties of ITO films, obtained by rfMS, are reported. We conducted studies to optimize the deposition parameters in order to obtain ITO thin films with excellent properties. The main

Alloyed Pt₃M (M = Co, Ni) nanoparticles supported on S- and N-doped carbon nanotubes for the oxygen reduction reaction

• Stéphane Louisia,
• Yohann R. J. Thomas,
• Pierre Lecante,
• Marie Heitzmann,
• M. Rosa Axet,
• Pierre-André Jacques and
• Philippe Serp

Beilstein J. Nanotechnol. 2019, 10, 1251–1269, doi:10.3762/bjnano.10.125

• treatment can be used to improve the carbon corrosion resistance of the CNT. In fact, annealing at high temperature (above 1000 °C) is used to remove structural defects from the CNT in order to obtained more stable [36] and more conductive [37] structures. In the case of the N-CNTs, the thermal annealing

Molecular attachment to a microscope tip: inelastic tunneling, Kondo screening, and thermopower

• Rouzhaji Tuerhong,
• Mauro Boero and
• Jean-Pierre Bucher

Beilstein J. Nanotechnol. 2019, 10, 1243–1250, doi:10.3762/bjnano.10.124

• tunneling microscope (Modified Createc LT-STM) equipped with a vector magnetic field of 1 T. As described in [21], the Au(111) single crystal was cleaned by repeated cycles of Ne+ ion bombardment followed by thermal annealing at 800 K. The MnPc molecules were evaporated from an Al2O3 crucible heated by

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• irrespective of treatment temperature. NBIS-induced critical instability occurs in the high-temperature-annealed TFT. Keywords: metal oxide; photo-induced instabilities; photon energy; thermal annealing; thin-film transistor (TFT) device; Introduction The rapid process of industrialization and

Novel reversibly switchable wettability of superhydrophobic–superhydrophilic surfaces induced by charge injection and heating

• Xiangdong Ye,
• Junwen Hou and
• Dongbao Cai

Beilstein J. Nanotechnol. 2019, 10, 840–847, doi:10.3762/bjnano.10.84

• angle of 0°), and the reverse process took only 30 s. Esmeryan et al. [12] revealed collapsed superhydrophobicity and conversion to superhydrophilicity upon thermal annealing of the coating at temperatures above 300 °C. Lai et al. [13] prepared a uniform and stable TiO2-based nanoband film by

Temperature-dependent Raman spectroscopy and sensor applications of PtSe₂ nanosheets synthesized by wet chemistry

• Mahendra S. Pawar and
• Dattatray J. Late

Beilstein J. Nanotechnol. 2019, 10, 467–474, doi:10.3762/bjnano.10.46

• method used to grow PtSe2 nanosheets followed by thermal annealing. The SEM and TEM analysis confirms the formation of PtSe2 nanosheets. Furthermore, XRD, Raman, XPS and SAED patterns were used to analyze the crystal structure and to confirm the formation of the PtSe2 phase. The temperature-dependent

• chemical method [25] at 90 °C using chloroplatinic acid (H2PtCl6) and Se powder as precursors followed by thermal annealing at 500 °C. Temperature-dependent Raman spectroscopic characterization was carried out on the materials. Materials and Methods All the chemicals such as chloroplatinic acid, Se powder

• two steps. The first step is the formation of the PtSe complex on the wall of a container by a wet chemical method; the second step is the phase transformation of PtSe2 by thermal annealing. 0.5 mL of a 0.015 M solution of H2PtCl6 was mixed with 0.5 mL of 0.5 M hexamethylenetetramine. In order to get

Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• higher δ values in the LMO film by adding a post-deposition annealing step. LMO films were grown following strategy II (represented in Figure 2 by blue triangles) respecting the same critical limits established from strategy I. It was proved that despite the addition of a thermal annealing at 500 °C for

Development of an anti-pollution coating process technology for the application of an on-site PV module

• Sejin Jung,
• Wonseok Choi,
• Jung Hyun Kim and
• Jang Myoun Ko

Beilstein J. Nanotechnol. 2019, 10, 332–336, doi:10.3762/bjnano.10.32

• annealing treatments were applied to PV module glasses, i.e., furnace, rapid thermal annealing (RTA) and torch. Among these, torch annealing, which can be easily carried out at PV module installation sites, was applied to PV module glasses using different numbers of repetition. Light transmittance, contact

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• budget during the rapid thermal annealing (RTA) process (see text). The color coding of the points in (f) corresponds to the measured Si NC size. The white area in the center is a guide to the eye indicating the parameter space favorable for Si NC formation. Figure (e) corresponds to the best combination

Impact of the anodization time on the photocatalytic activity of TiO₂ nanotubes

• Jesús A. Díaz-Real,
• Geyla C. Dubed-Bandomo,
• Juan Galindo-de-la-Rosa,
• Luis G. Arriaga,
• Janet Ledesma-García and
• Nicolas Alonso-Vante

Beilstein J. Nanotechnol. 2018, 9, 2628–2643, doi:10.3762/bjnano.9.244

• measurements were performed and the results are shown for Ti 2p, O 1s, F 1s and N 1s in Figure 2 and Table 1. All measurements were obtained after thermal annealing, for which the discussion of composition in terms of carbon is not considered. At first glance, the presence of fluorine can be observed which

Au–Si plasmonic platforms: synthesis, structure and FDTD simulations

• Anna Gapska,
• Marcin Łapiński,
• Paweł Syty,
• Wojciech Sadowski,
• Józef E. Sienkiewicz and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2018, 9, 2599–2608, doi:10.3762/bjnano.9.241

• are seen after thermal annealing at 350 °C (Figure 2f). It is clear that the formation of gold nanostructures on silicon starts below the eutectic temperature where the main force leading to the nanostructures formation is the reduction of the surface energy. This behavior of thin films can be

Two-dimensional photonic crystals increasing vertical light emission from Si nanocrystal-rich thin layers

• Lukáš Ondič,
• Marian Varga,
• Ivan Pelant,
• Alexander Kromka,
• Karel Hruška and
• Robert G. Elliman

Beilstein J. Nanotechnol. 2018, 9, 2287–2296, doi:10.3762/bjnano.9.213

• good qualitative agreement with the measured ones. Fabrication of the samples Firstly, SiNC-rich layers were fabricated by Si ion implantation into a polished silica substrate followed by thermal annealing at 1100 °C (for details see [28]). An implant energy of 400 keV with an implant fluence of 1

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• connected to a condenser that enabled reflux conditions during the 3 h heating period. Capping and annealing A 50 nm SiO2 capping layer was sputtered on all samples prior to thermal treatments. Rapid thermal annealing was carried out allowing for temperatures greater than 1000 °C for time periods of less

• thermal annealing and cap removal to provide an n-type doped silicon layer. Electrochemical capacitance–voltage profile showing the impact of applying a SiO2 capping layer for the duration of the annealing process. Both samples were annealed at 1050 °C for 5 s (the inset shows the allyldiphenylphosphine

Metal-free catalysis based on nitrogen-doped carbon nanomaterials: a photoelectron spectroscopy point of view

• Mattia Scardamaglia and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2018, 9, 2015–2031, doi:10.3762/bjnano.9.191

• , Scardamaglia et al. [37] showed that the sp2-character of the material is maintained or easily recovered through thermal annealing (Figure 6). A nitrogen atom can be hosted in the hexagonal carbon network in many forms. The three most common configurations are pyridinic (N1), pyrrolic (N2) and graphitic (N3

• determination is not possible by using only XPS and other techniques need to be used, e.g., infrared spectroscopy and electron microscopy. Content and configuration of nitrogen in graphene and carbon nanotubes can be tuned by thermal annealing or by the interaction with different substrates. Temperature

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• nanowire diameters of about 10 nm, a dopant deactivation is observed due to the dielectrical mismatch between the silicon and its surroundings. However, our previous investigations on 5 nm thick SiGeOI layers doped by ion implantation and activated by conventional rapid thermal annealing (RTA) [39][40

• thick buried oxide (BOX). The first step is the deposition of a 3nm Si3N4 directly followed by Ge+ implantation to preamorphise a part of the SiGe crystal and B+ implantation for p-type doping. In the following step, a second layer of 3 nm Si3N4 is deposited prior to laser thermal annealing (LTA). LTA

Light extraction efficiency enhancement of flip-chip blue light-emitting diodes by anodic aluminum oxide

• Yi-Ru Huang,
• Yao-Ching Chiu,
• Kuan-Chieh Huang,
• Shao-Ying Ting,
• Po-Jui Chiang,
• Chih-Ming Lai,
• Chun-Ping Jen,
• Snow H. Tseng and
• Hsiang-Chen Wang

Beilstein J. Nanotechnol. 2018, 9, 1602–1612, doi:10.3762/bjnano.9.152

• traditional LED by producing a TiO2 microstructure array on p-GaN through dipping and rapid convective deposition and using noncrystalline TiO2 and anatase TiO2 with a diameter of 520 nm [13]. Huang et al. used Zn and Mg for ion implantation at the GZO thin layer and then adopted rapid thermal annealing to

Nanoporous silicon nitride-based membranes of controlled pore size, shape and areal density: Fabrication as well as electrophoretic and molecular filtering characterization

• Axel Seidenstücker,
• Stefan Beirle,
• Fabian Enderle,
• Paul Ziemann,
• Othmar Marti and
• Alfred Plettl

Beilstein J. Nanotechnol. 2018, 9, 1390–1398, doi:10.3762/bjnano.9.131

• silicon dioxide layers during rapid thermal annealing [13]. This fabrication offers the advantage of full compatibility to semiconductor fabrication techniques. While pore distance and pore size can be controlled within acceptable limits, the generated pores are random in position and the membrane

• , COMSOL simulations, approximation for the resistance of a membrane with conical nanopores, serial repair mechanism, real-time fluorescence microscopy, and XPS analysis of CHF3/CF4-etched sample surfaces before and after thermal annealing. Supporting Information File 86: Additional experimental data

P3HT:PCBM blend films phase diagram on the base of variable-temperature spectroscopic ellipsometry

• Barbara Hajduk,
• Henryk Bednarski,
• Bożena Jarząbek,
• Henryk Janeczek and
• Paweł Nitschke

Beilstein J. Nanotechnol. 2018, 9, 1108–1115, doi:10.3762/bjnano.9.102

• post-deposition treatments, e.g., heat treatment [20][21]. One large branch of studies on OPV devices based on thin films of polymer:fullerene blend active layers deals with the optimization of their power conversion efficiency by applying thermal annealing [8]. Remarkably, it has been proven that the

Comparative study of antibacterial properties of polystyrene films with TiO_x and Cu nanoparticles fabricated using cluster beam technique

• Vladimir N. Popok,
• Cesarino M. Jeppesen,
• Peter Fojan,
• Anna Kuzminova,
• Jan Hanuš and
• Ondřej Kylián

Beilstein J. Nanotechnol. 2018, 9, 861–869, doi:10.3762/bjnano.9.80

• formation of the particles with semiconducting properties required for the catalytic formation of reactive oxygen species. Cu NPs are used as deposited. Partial NP embedding into polystyrene is realised in a controllable manner using thermal annealing in order to improve surface adhesion and make the

• formed in a cluster source into polymer simultaneously synthesized by plasma-enhanced chemical vapour deposition, by coating the NPs with a thin overlay or by soft landing of clusters on ex situ fabricated films followed by thermal annealing facilitating the partial embedding of clusters into the polymer

• Antibacterial coatings were prepared by deposition of Ti and Cu nanoparticles from cluster beams on polystyrene films followed by thermal annealing above the glass transition temperature. Ti clusters are oxidized in three different ways: by long-term exposure to ambient atmosphere, by plasma-enhanced oxidation

Sensing behavior of flower-shaped MoS₂ nanoflakes: case study with methanol and xylene

• Maryam Barzegar,
• Masoud Berahman and
• Azam Iraji zad

Beilstein J. Nanotechnol. 2018, 9, 608–615, doi:10.3762/bjnano.9.57

• nanoflakes. It was found that the nanoflakes form a flower-shaped structure with a large surface-to-volume ratio. The sensor device was successfully fabricated by spin coating of MoS2 flakes on an alumina substrate, on the back side of which a Pt heater circuit for thermal annealing was deposited. Our

Electron interactions with the heteronuclear carbonyl precursor H₂FeRu₃(CO)₁₃ and comparison with HFeCo₃(CO)₁₂: from fundamental gas phase and surface science studies to focused electron beam induced deposition

• Ragesh Kumar T P,
• Paul Weirich,
• Lukas Hrachowina,
• Marc Hanefeld,
• Ragnar Bjornsson,
• Helgi Rafn Hrodmarsson,
• Sven Barth,
• D. Howard Fairbrother,
• Michael Huth and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2018, 9, 555–579, doi:10.3762/bjnano.9.53

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• ] top-down NEM switch fabrication approaches. Similarly to copper, the fabrication of a platinum cantilever NEM switching element involved an additional thermal annealing step at 300 °C to reduce the stress gradient in the beam. The usability of platinum for electron-beam lithography-based fabrication

Comparative study of post-growth annealing of Cu(hfac)₂, Co₂(CO)₈ and Me₂Au(acac) metal precursors deposited by FEBID

• Marcos V. Puydinger dos Santos,
• Aleksandra Szkudlarek,
• Artur Rydosz,
• Carlos Guerra-Nuñez,
• Fanny Béron,
• Kleber R. Pirota,
• Stanislav Moshkalev,
• José Alexandre Diniz and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 91–101, doi:10.3762/bjnano.9.11

• (Table 1). In particular, the Co–C FEBID material exhibits a strong variation in composition during thermal annealing. Improvements in Co content from 67 atom % for as-deposited films to 78 atom % at 100 °C and 84 atom % at 200 and 300 °C annealing temperature occurred predominantly due to oxygen release

Electron-driven and thermal chemistry during water-assisted purification of platinum nanomaterials generated by electron beam induced deposition

• Ziyan Warneke,
• Markus Rohdenburg,
• Jonas Warneke,
• Janina Kopyra and
• Petra Swiderek

Beilstein J. Nanotechnol. 2018, 9, 77–90, doi:10.3762/bjnano.9.10

• precursor molecules were removed from the surface by thermal annealing to 450 K. The annealing step also initiates the thermal reactions that contribute to deposit formation in an actual FEBID process as obvious from our TDS data shown in Figure 4 and Figure 7. In total, more than 500 monolayers of the

The role of ligands in coinage-metal nanoparticles for electronics

• Ioannis Kanelidis and
• Tobias Kraus

Beilstein J. Nanotechnol. 2017, 8, 2625–2639, doi:10.3762/bjnano.8.263

• , materials that combine conductivity at lower percolation thresholds and mechanical flexibility, improved conductivity was achieved by means of conventional thermal annealing [129] or plasma treatment [130]. Gold nanowires (AuNW) with core diameters below 2 nm were arranged into a mesh on PET substrates