Graphene–graphite hybrid epoxy composites with controllable workability for thermal management

• Idan Levy,
• Eyal Merary Wormser,
• Maxim Varenik,
• Matat Buzaglo,
• Roey Nadiv and
• Oren Regev

Beilstein J. Nanotechnol. 2019, 10, 95–104, doi:10.3762/bjnano.10.9

• a result of the cycling between high and low working temperatures that is typical in electronic devices [2]. In solid TIMs, delamination, which can occur due to differences in thermal expansion between the substrate and the TIM, will introduce thermally insulating air voids into the interface. In

• liquid or paste-like TIMs, differences in thermal expansion between the hot and cold surfaces could result in the TIM leaking out of the interface, thus increasing the contact resistance. These malfunctions in the performance of TIMs could stem from their high viscosity values during application on

Block copolymers for designing nanostructured porous coatings

• Roberto Nisticò

Beilstein J. Nanotechnol. 2018, 9, 2332–2344, doi:10.3762/bjnano.9.218

• of the thermal expansion coefficients and/or directional enthalpy (or entropy) changes, as shown in [83]. Furthermore, crystallinity is also an important parameter that can influence the domain orientation. As reported by Register and co-workers [84], there are three different levels of orientation

Surface energy of nanoparticles – influence of particle size and structure

• Dieter Vollath,
• Franz Dieter Fischer and
• David Holec

Beilstein J. Nanotechnol. 2018, 9, 2265–2276, doi:10.3762/bjnano.9.211

• temperature (similar to the thermal expansion), however, this is unlikely to have any significant effect (and is expected to be marginal in comparison to other simplifications). Finally, no significant influence of the particle shape is expected as its origin (i.e., the spatial extent of the electronic cloud

Lead-free hybrid perovskites for photovoltaics

• Oleksandr Stroyuk

Beilstein J. Nanotechnol. 2018, 9, 2209–2235, doi:10.3762/bjnano.9.207

Multimodal noncontact atomic force microscopy and Kelvin probe force microscopy investigations of organolead tribromide perovskite single crystals

• Yann Almadori,
• David Moerman,
• Jaume Llacer Martinez,
• Philippe Leclère and
• Benjamin Grévin

Beilstein J. Nanotechnol. 2018, 9, 1695–1704, doi:10.3762/bjnano.9.161

• light-induced perturbation and thermal relaxation. In addition, by monitoring the sample temperature and analyzing the temporal evolution of the height change probed by AFM they were able to rule out possible contributions from the thermal expansion of the sample (we refer the reader to [16] and the

• originate from a thermal expansion effect. Note here that the HOPG substrate displays a thermal expansion coefficient [22] in the out-of-plane direction close to that of the MAPbBr3 crystal [23] and that both samples are relatively similar in terms of size (0.5 mm thick for the HOPG vs ≈1 mm for the MAPbBr3

Correlative electrochemical strain and scanning electron microscopy for local characterization of the solid state electrolyte Li_1.3Al_0.3Ti_1.7(PO₄)₃

• Nino Schön,
• Deniz Cihan Gunduz,
• Shicheng Yu,
• Hermann Tempel,
• Roland Schierholz and
• Florian Hausen

Beilstein J. Nanotechnol. 2018, 9, 1564–1572, doi:10.3762/bjnano.9.148

• observed ESM amplitude signal. Electrostatic interactions are discussed to be an important additional parameter that can influence ESM experiments [28][30][31] and will be the subject of future research. Additionally, LATP is known to have a strong anisotropic thermal expansion [3]. LTP, which has the same

The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene

• Egor A. Kolesov,
• Mikhail S. Tivanov,
• Olga V. Korolik,
• Olesya O. Kapitanova,
• Xiao Fu,
• Hak Dong Cho,
• Tae Won Kang and
• Gennady N Panin

Beilstein J. Nanotechnol. 2018, 9, 704–710, doi:10.3762/bjnano.9.65

• expression for compressibility-induced changes, while strain-related changes can be treated in a similar way to the thermal expansion description for supported graphene [7][8], where the strain is caused by a difference of thermal expansion coefficients for graphene and the substrate. Besides, monomers and

• pressure derivative. In the present study, β0 and β' values of 1250 GPa and 1 were used, respectively [17]. The strain-induced shift, by analogy with thermal expansion strain [7][8][18], can be written as: where is a biaxial strain rate (in our calculations we used the values of −58 and −144 cm−1/% for G

PTFE-based microreactor system for the continuous synthesis of full-visible-spectrum emitting cesium lead halide perovskite nanocrystals

• Chengxi Zhang,
• Weiling Luan,
• Yuhang Yin and
• Fuqian Yang

Beilstein J. Nanotechnol. 2017, 8, 2521–2529, doi:10.3762/bjnano.8.252

• the coefficient of thermal expansion, and β is the Debye temperature), increasing temperature leads to the decease of the band gap. This phenomenon makes it easy for the charge carriers (electrons and/or holes) to be activated and to move to a low energy state in comparison with the charge carriers at

Laser-assisted fabrication of gold nanoparticle-composed structures embedded in borosilicate glass

• Nikolay Nedyalkov,
• Mihaela Koleva,
• Nadya Stankova,
• Rosen Nikov,
• Mitsuhiro Terakawa,
• Yasutaka Nakajima,
• Lyubomir Aleksandrov and
• Reni Iordanova

Beilstein J. Nanotechnol. 2017, 8, 2454–2463, doi:10.3762/bjnano.8.244

• with dimensions of 10 × 10 × 3 mm and polished. We chose borosilicate glass because of its low thermal expansion coefficient and good resistance to the high thermal gradients likely to be induced by laser processing. The samples were irradiated by nanosecond and femtosecond laser pulses with different

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• ]. However, the integration with Si requires overcoming a number of specific problems inherent to the dissimilarities in the physical properties of both materials, namely, lattice mismatch, significant differences in thermal expansion coefficients, and formation of antiphase domains due to the fact that GaAs

• level structure of the nanowires, a detailed investigation on the temperature-dependent PL is required. Before the presentation of the results, we will mention briefly the common temperature dependence of the bandgap in a semiconductor. As the temperature increases, the thermal expansion coefficient of

Preparation and characterization of polycarbonate/multiwalled carbon nanotube nanocomposites

• Claudio Larosa,
• Niranjan Patra,
• Marco Salerno,
• Lara Mikac,
• Remo Merijs Meri and
• Mile Ivanda

Beilstein J. Nanotechnol. 2017, 8, 2026–2031, doi:10.3762/bjnano.8.203

• the organic matrix. DTA reveals a broad, exothermic peak followed by a small shoulder, which is believed to be due to the interaction and thermal expansion of MWCNTs in the PC matrix. No other thermal changes are observed after 700 °C. Figure 6 shows the DSC analysis of the PC/MWCNT film with 1 wt

Process-specific mechanisms of vertically oriented graphene growth in plasmas

• Subrata Ghosh,
• Shyamal R. Polaki,
• Niranjan Kumar,
• Sankarakumar Amirthapandian,
• Mohamed Kamruddin and
• Kostya (Ken) Ostrikov

Beilstein J. Nanotechnol. 2017, 8, 1658–1670, doi:10.3762/bjnano.8.166

• with increasing growth temperature. The residual stress is described as internal stress in nanostructured materials. The generation of residual stress during growth can be attributed to: (i) thermal stress, which occurs because of the difference in thermal expansion coefficient between the substrate

Parylene C as a versatile dielectric material for organic field-effect transistors

• Tomasz Marszalek,
• Maciej Gazicki-Lipman and
• Jacek Ulanski

Beilstein J. Nanotechnol. 2017, 8, 1532–1545, doi:10.3762/bjnano.8.155

• benefits resulting from the fact that the deposition takes place at or around room temperature. The two most important ones are the capability to coat thermolabile substrates [20][21][22] and the avoidance of mechanical stress otherwise introduced by different thermal expansion coefficients of coating and

The integration of graphene into microelectronic devices

• Guenther Ruhl,
• Sebastian Wittmann,
• Matthias Koenig and
• Daniel Neumaier

Beilstein J. Nanotechnol. 2017, 8, 1056–1064, doi:10.3762/bjnano.8.107

• wafer for device fabrication in a wafer bonder tool has not been established yet. Both techniques have in common that the strongly different thermal expansion coefficients of graphene (−6 × 10−6 K−1) [11][12] and the copper substrate (16.5 × 10−6 K−1) [13] typically lead to wrinkles and cracks in the

Assembly of metallic nanoparticle arrays on glass via nanoimprinting and thin-film dewetting

• Sun-Kyu Lee,
• Sori Hwang,
• Yoon-Kee Kim and
• Yong-Jun Oh

Beilstein J. Nanotechnol. 2017, 8, 1049–1055, doi:10.3762/bjnano.8.106

• PDMS were supported on a 1 mm thick glass substrate. The layer thicknesses in the two-layer stamps were determined in order to minimize the distortion of the hard PDMS layer that can occur due to the difference between the stiffness and thermal expansion coefficients of hard PDMS and those of the soft

Vapor-phase-synthesized fluoroacrylate polymer thin films: thermal stability and structural properties

• Paul Christian and
• Anna Maria Coclite

Beilstein J. Nanotechnol. 2017, 8, 933–942, doi:10.3762/bjnano.8.95

• thus larger lattice distances) upon temperature increase, corresponding to thermal expansion of the unit cell. At 76 ± 2 °C, a sudden decrease in the diffracted intensity is then observed, denoting the melting point of the lamella. As the temperature is further increased to 100 °C, no change is

• final lamella arrangement within the resolution of the experiment (2 °C/min). On the other hand, a more pronounced shift of the Bragg peak positions towards higher q-values is noted upon cooling. To quantify the thermal expansion/contraction of the p-PFDA unit cell, the coefficients of linear thermal

• monitored without the need of long integration times. Above and below the transition point, the data features the thermal expansion of the p-PFDA film. The observed changes do not depend on whether the experiment is performed while heating or cooling, hinting at a reversible behavior. This also means that

Relationships between chemical structure, mechanical properties and materials processing in nanopatterned organosilicate fins

• Gheorghe Stan,
• Richard S. Gates,
• Qichi Hu,
• Kevin Kjoller,
• Craig Prater,
• Kanwal Jit Singh,
• Ebony Mays and
• Sean W. King

Beilstein J. Nanotechnol. 2017, 8, 863–871, doi:10.3762/bjnano.8.88

• onto the sample of interest and thermal heating of the sample occurs when the IR wavelength coincides with the IR vibrational absorption bands characteristic of the material [24][27]. The photoinduced heating causes a thermal expansion of the sample that is then detected as an oscillation in an AFM

• kHz. This offers improved sensitivity over the OPO IR laser source used in previous investigations [32] and thus provides a better signal-to-noise ratio for the low thermal expansion of the organosilicate material. The oscillation amplitude of the probe at this frequency was then plotted versus the

Graphene–polymer coating for the realization of strain sensors

• Carmela Bonavolontà,
• Carla Aramo,
• Massimo Valentino,
• Giampiero Pepe,
• Sergio De Nicola,
• Gianfranco Carotenuto,
• Angela Longo,
• Mariano Palomba,
• Simone Boccardi and
• Carosena Meola

Beilstein J. Nanotechnol. 2017, 8, 21–27, doi:10.3762/bjnano.8.3

• amplitude variation of mean applied stress Δσ (pressure) by the simple relation ΔT = −ΓTασ where T is the absolute temperature of the sample, Γ is the material thermoelastic constant, given by Γ = α/ρcp where α is the thermal expansion coefficient, ρ the density and cp the specific heat at constant pressure

• . For graphene we obtain ΓTα = 0.19 GPa−1 at room temperature (Tα = 300 K) using the thermal expansion coefficient α = −3 × 10−6 K−1 [18], ρ = 2.25 × 103 Kg m−3 and cp = 2.125 × 103 J·kg−1·K−1 [19]. The negative sign of the thermal expansion coefficient implies that subjecting the graphene slat to

Annealing-induced recovery of indents in thin Au(Fe) bilayer films

• Anna Kosinova,
• Ruth Schwaiger,
• Leonid Klinger and
• Eugen Rabkin

Beilstein J. Nanotechnol. 2016, 7, 2088–2099, doi:10.3762/bjnano.7.199

• thickness [21], whereas annihilation of vacancies at the grain boundaries helps to relax compressive stresses in the film formed during heating due to the mismatch of thermal expansion coefficients between the film and the substrate. The rim-less shape of the dewetting holes observed far from the indented

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

• Ionel Stavarache,
• Valentin Adrian Maraloiu,
• Petronela Prepelita and
• Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

• concentration of defect states and a mechanical stress induced in the system by the difference between the thermal expansion coefficients of Ge and SiO2 and the large lattice constant of Ge [29][30][31][32]. The high temperature used for the synthesis excludes the use of low-cost materials such as flexible or

Reasons and remedies for the agglomeration of multilayered graphene and carbon nanotubes in polymers

• Rasheed Atif and
• Fawad Inam

Beilstein J. Nanotechnol. 2016, 7, 1174–1196, doi:10.3762/bjnano.7.109

Thermo-voltage measurements of atomic contacts at low temperature

• Ayelet Ofarim,
• Bastian Kopp,
• Thomas Möller,
• León Martin,
• Johannes Boneberg,
• Paul Leiderer and
• Elke Scheer

Beilstein J. Nanotechnol. 2016, 7, 767–775, doi:10.3762/bjnano.7.68

• with a variable intensity up to 3 mW onto the sample. The influence of thermal gradients onto atomic-size contacts usually causes geometry changes of the tips due to thermal expansion caused by the deposited energy. For our experiment we obtain from simulations that the distance change between the tips

Efficiency improvement in the cantilever photothermal excitation method using a photothermal conversion layer

• Natsumi Inada,
• Hitoshi Asakawa,
• Taiki Kobayashi and
• Takeshi Fukuma

Beilstein J. Nanotechnol. 2016, 7, 409–417, doi:10.3762/bjnano.7.36

• disadvantage, cantilevers are typically coated with a thin metal layer to provide large amplitude response [21][23][24][25]. The difference in the thermal expansion coefficients between the cantilever material (e.g., silicon or silicon nitride) and thin metal layer (e.g., gold or aluminum) induces a large

Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

• Kuang-Yang Kou,
• Yu-En Huang,
• Chien-Hsun Chen and
• Shih-Wei Feng

Beilstein J. Nanotechnol. 2016, 7, 75–80, doi:10.3762/bjnano.7.9

• used for thin film, solar cell applications is investigated. The residual strain induced by the lattice mismatch and the difference in the thermal expansion coefficient for thicker ZnO@B is relaxed, leading to an increased surface texture, stronger absorbance, larger grain size, and lower sheet

• relaxation by microcrack formation, is also observed in the ZnO thin film grown by plasma-assisted molecular-beam epitaxy [10]. Therefore, for textured, ZnO@B TCO, the residual strain induced by the lattice mismatch and the difference of thermal expansion coefficient is relaxed, leading to an apparent

• , optical, and electrical characteristics of LPCVD-grown ZnO are sensitive to the growth temperature, pressure, and flow rate, TCO can be tuned according to the application. ZnO films grown on a sapphire substrate undergo residual strain induced by the lattice mismatch and the difference in thermal

Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires

• Suvankar Das,
• Amitava Moitra,
• Mishreyee Bhattacharya and
• Amlan Dutta

Beilstein J. Nanotechnol. 2015, 6, 1970–1977, doi:10.3762/bjnano.6.201

• employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young’s modulus and the linear coefficient of thermal expansion through separate simulations

• normal stresses on clamped Si/Ge and Ge/Si CSNWs due to variation in the operating temperature. The calculation of thermal stress typically involves the measurement of Young’s modulus and the thermal expansion of a solid. Unlike the composite structures of macroscopic dimensions, core–shell nanowires

• composite system. In the same way, the presence of an interface modulates the state of phonons in these nanowires and the analytical estimation of the net thermal expansion by conventional thermo-mechanical theory becomes unfeasible. In view of these difficulties, atomistic simulations have been employed to