Formation of nanoripples on ZnO flat substrates and nanorods by gas cluster ion bombardment

• Xiaomei Zeng,
• Vasiliy Pelenovich,
• Bin Xing,
• Rakhim Rakhimov,
• Wenbin Zuo,
• Alexander Tolstogouzov,
• Chuansheng Liu,
• Dejun Fu and
• Xiangheng Xiao

Beilstein J. Nanotechnol. 2020, 11, 383–390, doi:10.3762/bjnano.11.29

• Ion Beam Application, School of Physics and Technology, Wuhan University, Wuhan 430072, China School of Power & Mechanical Engineering, Wuhan University, Wuhan 430072, China Ryazan State Radio Engineering University, Gagarin Str. 59/1, Ryazan 390005, Russian Federation Centre for Physics and

• parallel steps or ribs. The more ordered ripple formation on nanorods can be associated with the confinement of the nanorod facets in comparison with the quasi-infinite surface of the flat substrates. Keywords: cluster ion bombardment; gas cluster ion beam; surface ripples; ZnO nanorods; Introduction The

• -enhanced Raman spectroscopy [4]. Ion beam formation of nanoscale ripples has emerged as a versatile method to imprint uniaxial magnetic anisotropy [5] and to control the magnetic texture of thin films [6]. Formation of self-assembled surface nanoripple structures by monoatomic off-normal ion irradiation

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• following the method of Kumar and co-workers [36]. The Ag films were evaporated on standard Si/SiO2 wafers using a 12 nm thick Ti sticking layer. The structural characterization of the thin film samples was carried out by Rutherford backscattering spectrometry (RBS) using an ion beam of 3500 keV 4He

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• . Time-of-flight secondary ion mass spectrometry (TOF-SIMS) measurements were carried out in a TOF-SIMS 5 device (ION-TOF GmbH, Münster, Germany). The spectrometry was performed in static SIMS mode (primary ion beam dose < 2 × 1011 ions/cm2) with Bi3+ primary ions at 25 keV. Spectra were calibrated on

Gold-coated plant virus as computed tomography imaging contrast agent

• Alaa A. A. Aljabali,
• Mazhar S. Al Zoubi,
• Khalid M. Al-Batanyeh,
• Ali Al-Radaideh,
• Mohammad A. Obeid,
• Abeer Al Sharabi,
• Walhan Alshaer,
• Bayan AbuFares,
• Tasnim Al-Zanati,
• Murtaza M. Tambuwala,
• Naveed Akbar and
• David J. Evans

Beilstein J. Nanotechnol. 2019, 10, 1983–1993, doi:10.3762/bjnano.10.195

• concentration of 0.01–0.05 mg/mL and deposited on 400 mesh carbon grids (SPI supplies), samples were air dried prior to imaging. Energy-dispersive X-Ray spectroscopy A FIB Scios system was used combined with a scanning electron microscope (SEM) and a focused ion beam equipped with X-MaxN 50 mm2 EDS system to

Precise local control of liquid crystal pretilt on polymer layers by focused ion beam nanopatterning

• Maxim V. Gorkunov,
• Irina V. Kasyanova,
• Vladimir V. Artemov,
• Alena V. Mamonova and
• Serguei P. Palto

Beilstein J. Nanotechnol. 2019, 10, 1691–1697, doi:10.3762/bjnano.10.164

• alignment of rubbed polymer layers can be locally flipped to vertical by irradiation with a focused ion beam on a scale of tens of nanometers. Results: We propose a digital method to precisely steer the liquid crystal director tilt at polymer surfaces by combining micrometer-size areas treated with focused

• ion beam and pristine areas. The liquid crystal tends to average the competing vertical and planar alignment actions and is stabilized with an intermediate pretilt angle determined by the local pattern duty factor. In particular, we create micrometer-sized periodic stripe patterns with this factor

• techniques such as patterning with nanogrooves [13][14][15] and nanoslits [16], ion-beam irradiation of specific inorganic [17] and polymer [18] substrates, subjecting of photo-controlled aligning polymers to near-threshold doses of ultraviolet radiation [19], formation of surface microdomains from

Stationary beam full-field transmission helium ion microscopy using sub-50 keV He⁺: Projected images and intensity patterns

• Michael Mousley,
• Santhana Eswara,
• Olivier De Castro,
• Olivier Bouton,
• Nico Klingner,
• Christoph T. Koch,
• Gregor Hlawacek and
• Tom Wirtz

Beilstein J. Nanotechnol. 2019, 10, 1648–1657, doi:10.3762/bjnano.10.160

• Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf e.V., Bautzner Landstr. 400, 01328 Dresden, Germany Department of Physics, Humboldt University of Berlin, Newtonstraße 15, 12489 Berlin, Germany 10.3762/bjnano.10.160 Abstract A dedicated transmission helium ion microscope

• impact on the final intensity distribution in the far field. Hence, the different processes contributing to the final intensities will need to be understood in order to decouple and study the relevant ion-beam scattering and deflection phenomena. Keywords: charging; helium ion microscopy; ion

• The THIM instrument shown schematically in Figure 1 was used to acquire the THIM images of BN nanoparticles adhered to a TEM grid as shown in Figure 2. A video was recorded while varying the Lens 2 voltage (which sets the ion beam focal point) from approximately 5 kV to 9 kV. Simulations with SIMION

Subsurface imaging of flexible circuits via contact resonance atomic force microscopy

• Wenting Wang,
• Chengfu Ma,
• Yuhang Chen,
• Lei Zheng,
• Huarong Liu and
• Jiaru Chu

Beilstein J. Nanotechnol. 2019, 10, 1636–1647, doi:10.3762/bjnano.10.159

• 11 wt % PMMA in anisole solvent at 1500 rpm for 5 min, resulting in a thickness of approximately 3.5 µm. Then, a 300 nm thick Au film was sputtered on the PMMA substrate by using magnetron sputtering. The Au film was subsequently patterned by focused ion beam (FIB) milling (FEI, Helios NanoLab 650

Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere

• Petr Knotek,
• Tomáš Plecháček,
• Jan Smolík,
• Petr Kutálek,
• Filip Dvořák,
• Milan Vlček,
• Jiří Navrátil and
• Čestmír Drašar

Beilstein J. Nanotechnol. 2019, 10, 1401–1411, doi:10.3762/bjnano.10.138

• generated in the analyzer. The work function of the sample was calculated as WF = hν Ecut-off, where Ecut-off was determined from the intersection of the linear extrapolation of the secondary-electron cut-off (SECO) with the background. All samples were sputtered with argon ions using a scanning focused ion

• beam source in order to remove surface contaminants. A monoatomic argon ion source was utilized with energy of 2 keV, ion current 10 µA, raster area 1 × 1 mm2 and sputtering time 30 s. Results and Discussion Separated metal nanoparticles on the substrate In TE materials the NIs applicable for an

Gas sensing properties of individual SnO₂ nanowires and SnO₂ sol–gel nanocomposites

• Alexey V. Shaposhnik,
• Dmitry A. Shaposhnik,
• Sergey Yu. Turishchev,
• Olga A. Chuvenkova,
• Stanislav V. Ryabtsev,
• Alexey A. Vasiliev,
• Xavier Vilanova,
• Francisco Hernandez-Ramirez and
• Joan R. Morante

Beilstein J. Nanotechnol. 2019, 10, 1380–1390, doi:10.3762/bjnano.10.136

• electrical contacts with individual nanowires [21][22][23][24][25][26][27][28][29][30][31][32][33]. These contacts can be made by means of photolithography, but more often, focused ion beam (FIB) technology is used for this purpose. This approach has several advantages: first, a reliable electrical contact

• contamination on the sample surfaces. Device manufacture Manufacture of the device based on a single nanowire Individual nanowires were electrically contacted by direct focused-ion beam (FIB) platinum deposition, using an FEI dual beam Strata 235 instrument combined with a metal–organic injector to deposit

Fabrication of phase masks from amorphous carbon thin films for electron-beam shaping

• Lukas Grünewald,
• Dagmar Gerthsen and
• Simon Hettler

Beilstein J. Nanotechnol. 2019, 10, 1290–1302, doi:10.3762/bjnano.10.128

• , which induces unwanted scattering events. Results: Phase masks of conductive amorphous carbon (aC) were successfully fabricated with optical lithography and focused ion beam milling. Analysis by TEM shows the successful generation of Bessel and vortex beams. No charging or degradation of the aC phase

• structure without any (in-)elastic scattering events, i.e., the amplitude is only modified slightly. Experimentally, focused ion beam (FIB) milling or electron-beam lithography are used to engrave a well-defined thickness profile in an amorphous thin film thereby exploiting the direct proportionality

• deviations from the desired form because the ideally sharp edges are significantly rounded due to the finite diameter of the ion beam. Application of phase masks Bessel beam phase mask in object plane PMs were first investigated as conventional samples in the object plane of a TEM which allows for a detailed

CuInSe₂ quantum dots grown by molecular beam epitaxy on amorphous SiO₂ surfaces

• Henrique Limborço,
• Pedro M.P. Salomé,
• Rodrigo Ribeiro-Andrade,
• Jennifer P. Teixeira,
• Nicoleta Nicoara,
• Kamal Abderrafi,
• Joaquim P. Leitão,
• Juan C. Gonzalez and
• Sascha Sadewasser

Beilstein J. Nanotechnol. 2019, 10, 1103–1111, doi:10.3762/bjnano.10.110

• present one line for each element. The STEM lamellae were prepared in a focused ion beam (FIB) FEI Dual-Beam Helios 450S with FIB Mo-grids using a technique known as “lift-out” [35]. To improve FIB preparation and visualization of the nanodots in the STEM, the samples were coated with an amorphous carbon

Nanoscale optical and structural characterisation of silk

• Meguya Ryu,
• Reo Honda,
• Adrian Cernescu,
• Arturas Vailionis,
• Armandas Balčytis,
• Jitraporn Vongsvivut,
• Jing-Liang Li,
• Denver P. Linklater,
• Elena P. Ivanova,
• Vygantas Mizeikis,
• Mark J. Tobin,
• Junko Morikawa and
• Saulius Juodkazis

Beilstein J. Nanotechnol. 2019, 10, 922–929, doi:10.3762/bjnano.10.93

• modalities of sample preparation for nanoscale imaging include focused ion beam milling and microtome slicing. When the thickness of samples, especially soft biomaterials, is close to 100 nm the cutting tool might cause tear- and cut-induced strain below the surface. In turn, this can cause artifacts in the

Periodic Co/Nb pseudo spin valve for cryogenic memory

• Nikolay Klenov,
• Yury Khaydukov,
• Sergey Bakurskiy,
• Roman Morari,
• Igor Soloviev,
• Vladimir Boian,
• Thomas Keller,
• Mikhail Kupriyanov,
• Anatoli Sidorenko and
• Bernhard Keimer

Beilstein J. Nanotechnol. 2019, 10, 833–839, doi:10.3762/bjnano.10.83

• sapphire (Al2O3) substrate. Before the deposition the substrates were etched by an argon ion beam inside the chamber. The targets Nb(99.99%) and Co(99.99%) were presputtered to remove metallic oxides and contamination absorbed on the surfaces. Additionally, immediately before deposition of the next layer

On the transformation of “zincone”-like into porous ZnO thin films from sub-saturated plasma enhanced atomic layer deposition

• Alberto Perrotta,
• Julian Pilz,
• Stefan Pachmajer,
• Antonella Milella and
• Anna Maria Coclite

Beilstein J. Nanotechnol. 2019, 10, 746–759, doi:10.3762/bjnano.10.74

• charging was compensated using a dual beam charge neutralization, with a flux of low-energy electrons (ca. 1 eV) combined with positive Ar ions of very low energy (10 eV). Samples were sputter cleaned for 1 min with an Ar ion beam of 1 kV, 1 µA (raster size: 2 × 2 cm2). The acquired spectra were processed

Biomimetic synthesis of Ag-coated glasswing butterfly arrays as ultra-sensitive SERS substrates for efficient trace detection of pesticides

• Guochao Shi,
• Mingli Wang,
• Yanying Zhu,
• Yuhong Wang,
• Xiaoya Yan,
• Xin Sun,
• Haijun Xu and
• Wanli Ma

Beilstein J. Nanotechnol. 2019, 10, 578–588, doi:10.3762/bjnano.10.59

• invaluable in research and industrial application. Researchers have paid attention to physical methods (“top-down” techniques) such as focused ion beam lithography (FIB) [14][15], electron beam lithography (EBL) [16][17] or soft nanoimprint nanolithography (NIL) [18], which can produce controllable shapes

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

• Marwa Mokni,
• Gianluigi Maggioni,
• Abdelkader Kahouli,
• Sara M. Carturan,
• Walter Raniero and
• Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

• quantified by Rutherford backscattering spectrometry (RBS). Ion beam analyses of the deposited films were performed using a 2.0 MeV 4He+ beam at the Van de Graaf accelerator at the Laboratori Nazionali di Legnaro, with a scattering angle of 160°. We have to highlight that the Cl content measured with RBS (in

• atoms·cm−2) is directly converted into the amount of parylene (in monomeric units·cm−2), since each monomeric unit contains one Cl atom. RBS analysis was performed on coatings deposited on silicon substrates. Taking into account the desorption of Cl-containing species from the film occurring during ion

• beam analysis [72], RBS spectra were acquired by irradiating different spots of the pristine samples and collecting only 0.2 µC of charge on each spot until a total collected charge of a few microcoulombs was reached. A stylus profilometer (Tencor Instruments, model Alpha-Step 200) was used to measure

Interaction of Te and Se interlayers with Ag or Au nanofilms in sandwich structures

• Arkadiusz Ciesielski,
• Lukasz Skowronski,
• Marek Trzcinski,
• Ewa Górecka,
• Wojciech Pacuski and
• Tomasz Szoplik

Beilstein J. Nanotechnol. 2019, 10, 238–246, doi:10.3762/bjnano.10.22

• interlaced by Ar-ion etching in order to study the chemical composition of subsequent sublayers. The energy of Ar ions was 4 keV and the incidence angle was 69°. An ion beam scanned an area of 4 × 4 mm in order to etch the analyzed surface homogeneously. The concentration of elements was estimated by fitting

Sputtering of silicon nanopowders by an argon cluster ion beam

• Xiaomei Zeng,
• Vasiliy Pelenovich,
• Zhenguo Wang,
• Wenbin Zuo,
• Sergey Belykh,
• Alexander Tolstogouzov,
• Dejun Fu and
• Xiangheng Xiao

Beilstein J. Nanotechnol. 2019, 10, 135–143, doi:10.3762/bjnano.10.13

• Xiaomei Zeng Vasiliy Pelenovich Zhenguo Wang Wenbin Zuo Sergey Belykh Alexander Tolstogouzov Dejun Fu Xiangheng Xiao Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam

• (CeFITec), Dept. de Física da Faculdade de Ciências e Tecnologia (FCT), Universidade Nova de Lisboa, Caparica, 2829-516, Portugal 10.3762/bjnano.10.13 Abstract In this work an Ar+ cluster ion beam with energy in the range of 10–70 keV and dose of 7.2 × 1014–2.3 × 1016 cluster/cm2 was used to irradiate

• pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and

A new bioinspired method for pressure and flow sensing based on the underwater air-retaining surface of the backswimmer Notonecta

• Matthias Mail,
• Adrian Klein,
• Horst Bleckmann,
• Anke Schmitz,
• Torsten Scherer,
• Peter T. Rühr,
• Goran Lovric,
• Robin Fröhlingsdorf,
• Stanislav N. Gorb and
• Wilhelm Barthlott

Beilstein J. Nanotechnol. 2018, 9, 3039–3047, doi:10.3762/bjnano.9.282

• joint membrane and a socket septum (Figure 3). The dendrite is enveloped in a dendritic sheath whose base shows a ciliary constriction and runs into the soma region of the sensillum (Figure 3). Tomography images using focused ion beam (FIB) techniques revealed that the two types of setae differ in

• the microstructures. Furthermore, the microstructures of the setal bases were analyzed using focused ion beam techniques (FIB, Zeiss Auriga 60). In this case, fresh hemelytra were covered with a thin gold layer using a sputter coater (Sputter Coater 108auto, Cressington). Using the FIB system, a

Size limits of magnetic-domain engineering in continuous in-plane exchange-bias prototype films

• Alexander Gaul,
• Daniel Emmrich,
• Timo Ueltzhöffer,
• Henning Huckfeldt,
• Hatice Doğanay,
• Johanna Hackl,
• Muhammad Imtiaz Khan,
• Daniel M. Gottlob,
• Gregor Hartmann,
• André Beyer,
• Dennis Holzinger,
• Slavomír Nemšák,
• Claus M. Schneider,
• Armin Gölzhäuser,
• Günter Reiss and
• Arno Ehresmann

Beilstein J. Nanotechnol. 2018, 9, 2968–2979, doi:10.3762/bjnano.9.276

• present there is no method available where the lateral resolution is considerably higher as the expected minimum pattern sizes. Here we suggest mask-less patterning by the highly focused beam of a helium ion microscope (HIM), to lower the limits of ion beam induced magnetic pattering in continuous layer

• energy transfer causing defects in the atomic lattice structure [35]. These defects do not change the orientation of the local unidirectional anisotropy, but rather influence the local magnetic properties, as already explained in [35][40]. The area modified by an ion beam is defined by the beam diameter

• the AF. Therefore, an ion beam of 8 nm diameter achieves a patterning width of less than 40 nm at the EB interface well below the expected material specific size limit for stable domains. This size limit is defined by the DW width between in-plane engineered EB domains and depends on the relative

Site-controlled formation of single Si nanocrystals in a buried SiO₂ matrix using ion beam mixing

• Xiaomo Xu,
• Thomas Prüfer,
• Daniel Wolf,
• Hans-Jürgen Engelmann,
• Lothar Bischoff,
• René Hübner,
• Karl-Heinz Heinig,
• Wolfhard Möller,
• Stefan Facsko,
• Johannes von Borany and
• Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

• + or Ne+ ion beam mixing of Si into a buried SiO2 layer followed by thermally activated phase separation. Binary collision approximation and kinetic Monte Carlo methods are conducted to gain atomistic insight into the influence of relevant experimental parameters on the Si NC formation process. Energy

• single Si NCs. Line irradiation with a fluence of 3000 Ne+/nm2 and a line width of 4 nm leads to the formation of a chain of Si NCs, and a single NC with 2.2 nm diameter is subsequently isolated and visualized in a few nanometer thin lamella prepared by a focused ion beam (FIB). The Si NC is centered

• between the SiO2 layers and perpendicular to the incident Ne+ beam. Keywords: helium ion microscopy; ion beam mixing; Monte Carlo simulations; phase separation; single electron transistor; Introduction Silicon has been the main material in the semiconductor industry for almost all use cases with the

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• ”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The

• generate the lithographic pattern. The first approach, termed scanned beam technology, comprises electron and ion beam lithographies and electron/ion beam induced deposition. It has its origins in the scanning electron microscope and, more recently, the scanning ion microscope. Scanning probe lithography

• multibeam electron writers [13] are emerging as novel tools of the future. In addition to resist-based lithography, these are capable of writing patterns by electron beam induced deposition [14]. Focused ion beam tools are also becoming increasingly important. The latter include multi-beam ion beam systems

Controlling surface morphology and sensitivity of granular and porous silver films for surface-enhanced Raman scattering, SERS

• Sherif Okeil and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2018, 9, 2813–2831, doi:10.3762/bjnano.9.263

• -30 FEG using an electron beam at 25 kV. Cross-sectional transmission electron microscopy (TEM) images of the silver films were recorded using a Tecnai G2 F20 microscope operating at 200 kV after the use of focused-ion beam (FIB) for sample preparation [74]. X-ray diffraction (XRD) was performed on a

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructures. The experimental samples were grown by ion-beam deposition. We showed that using three vertically stacked layers of InAs quantum dots separated by thin GaAs barrier layers was accompanied by a red

• . It is shown that isovalent doping of GaAs potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV. Keywords: infrared photodetectors; ion-beam deposition; nanoheterostructures; photoluminescence; quantum dot; semiconductors

• heterostructures [17][18][20][32][33]. In this regard, a study of the influence of Bi on the optical properties of InAs/GaAs heterostructures is an actual requirement. In this work, ion-beam deposition (IBD) is used to grow the samples. IBD has significant advantages over many methods of growth from the gas phase

Low cost tips for tip-enhanced Raman spectroscopy fabricated by two-step electrochemical etching of 125 µm diameter gold wires

• Antonino Foti,
• Francesco Barreca,
• Enza Fazio,
• Cristiano D’Andrea,
• Paolo Matteini,
• Onofrio Maria Maragò and
• Pietro Giuseppe Gucciardi

Beilstein J. Nanotechnol. 2018, 9, 2718–2729, doi:10.3762/bjnano.9.254

• deposition (EBID) and focused ion beam (FIB) milling [41][42][43] (see [30][44] for reviews). Fabrication methods capable of guaranteeing high reproducibility, cost-effectiveness and scalability to industrial production are, however, still not available at present. Metal vapor deposition on AFM tips is