Zinc oxide nanostructures for fluorescence and Raman signal enhancement: a review

• Ioana Marica,
• Fran Nekvapil,
• Maria Ștefan,
• Cosmin Farcău and
• Alexandra Falamaș

Beilstein J. Nanotechnol. 2022, 13, 472–490, doi:10.3762/bjnano.13.40

• on semiconductors decorated with noble metals, or vice versa, has been proposed. These hybrid nanostructures show enhanced optical and electronic properties due to the coupling between the noble metal and the semiconductor [10][11][13]. Various fabrication techniques have been employed to develop

Tin dioxide nanomaterial-based photocatalysts for nitrogen oxide oxidation: a review

• Viet Van Pham,
• Hong-Huy Tran,
• Thao Kim Truong and
• Thi Minh Cao

Beilstein J. Nanotechnol. 2022, 13, 96–113, doi:10.3762/bjnano.13.7

• ] (see Equations 1–10). Recently, research on tin dioxide (SnO2) materials has increased significantly, which expresses the potential of SnO2 materials for the scientific community (Figure 2a). SnO2 is one of the most extensively investigated n-type semiconductors. It is known as tin(VI) oxide or stannic

• Many attempts have been made to enhance the photocatalytic activity and take better advantage of SnO2 for the NOx abatement, including the combination with other metal oxides [70], organic semiconductors [71], or metallic nanomaterials [72] to form a heterojunction/composite photocatalyst, and self

• co-photocatalysts, including inorganic and organic semiconductors, is a practical approach to enhance the charge transfer efficacy for the photocatalytic process. The photocatalytic degradation of NOx over SnO2 as a host photocatalyst is reported to be considerably enhanced after the combination with

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• reasonable choice for DMS alloys with chromium for the best compatibility with silicon-based industry. However, precipitation of transition metals is the main obstacle; but in low-dimensional semiconductors the precipitation is significantly reduced. Therefore, CrGe nanowires (NWs) were prepared to study

• representatives of diluted magnetic semiconductors, which have been intensively studied for future magnetic, optomagnetic, electronic, and related devices. Preparation of Cr/Ge materials in the form of NWs opens space for tuning the magnetic properties in germanium-rich Cr/Ge nanostructures. Moreover, the complex

Open-loop amplitude-modulation Kelvin probe force microscopy operated in single-pass PeakForce tapping mode

• Gheorghe Stan and
• Pradeep Namboodiri

Beilstein J. Nanotechnol. 2021, 12, 1115–1126, doi:10.3762/bjnano.12.83

• structures including metals [1], semiconductors [2][3][4], dielectrics [5][6][7], photovoltaics [8][9][10], polymers [11][12][13], ferroelectrics [14][15][16], and biological samples [17][18][19]. Technical descriptions and applications of KPFM methods for nanoscale material property characterizations are

First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications

• Muhammad Atif Sattar,
• Najwa Al Bouzieh,
• Maamar Benkraouda and
• Noureddine Amrane

Beilstein J. Nanotechnol. 2021, 12, 1101–1114, doi:10.3762/bjnano.12.82

• modified Becke–Johnson (mBJ) meta-GGA exchange-correlation functional over the optimized structure of π-SnSe generated with PBEsol. For a variety of semiconductors and insulators, the mBJ potential calculates the bandgap in a good agreement with experimental data [53]. To ensure a good energy convergence

•  11b, which is directly linked to the electronic properties (i.e., band structure and DOS). This absorption of photons accounts for interband transitions within semiconductors from a certain location of the electromagnetic spectrum. Most transitions happen within the infrared region once the energy is

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• semiconductors and emit from the UV to the red region of the visible spectrum via bandgap tuning (i.e., on alloying with In and Al [5][6][7]). Similarly, other active materials for quantum dot light-emitting diodes (QLED), such as the II–VI semiconductor family include ZnO, CdSe, CdS, CdTe, ZnSe, ZnS, ZnTe, and

• as TiO2, ZnO, SnO2 in combination with Ag, Au, and PtNP has shown increment in the luminance and reduction in the operating voltages of the devices. For several decades, inorganic LED based on III–V group semiconductors (i.e., GaAs, GaP, InGaAs, InGaP, GaN, InGaN, and AlGaInP) have been extensively

Revealing the formation mechanism and band gap tuning of Sb₂S₃ nanoparticles

• Maximilian Joschko,
• Franck Yvan Fotue Wafo,
• Christina Malsi,
• Danilo Kisić,
• Ivana Validžić and
• Christina Graf

Beilstein J. Nanotechnol. 2021, 12, 1021–1033, doi:10.3762/bjnano.12.76

• , Abulikemu et al. reported a value of 2.15 eV, while Wang et al. reported 2.02 eV for nanoparticles received from a hot-injection synthesis using different solvents [17][19]. Variation in band gap values is also known to occur in other amorphous semiconductors, e.g., amorphous, hydrogenated silicon. This was

Molecular assemblies on surfaces: towards physical and electronic decoupling of organic molecules

• Sabine Maier and
• Meike Stöhr

Beilstein J. Nanotechnol. 2021, 12, 950–956, doi:10.3762/bjnano.12.71

• ][30][31][32]. Additional concepts to weaken adsorbate–surface interactions involve the post-deposition intercalation of atomic species such as iodine [33]. For semiconductors, for example, bare silicon or germanium, electronic decoupling of molecules can be achieved by either the growth of ultrathin

• these ultrathin interfacial layers significantly reduce both the molecular adsorption energy and the hybridization of molecular states with the electronic bands in metals and semiconductors. However, charge transport is not completely inhibited, and electrons can still tunnel from the metal through

• due to the lattice mismatch between 2D material and its substrate might serve as structural templates for molecular adsorption and self-assembly [79][80][81][82]. The electronic decoupling depends on the electronic properties of the 2D materials as they can be insulators, semiconductors, semimetals

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

Nanoporous and nonporous conjugated donor–acceptor polymer semiconductors for photocatalytic hydrogen production

• Zhao-Qi Sheng,
• Yu-Qin Xing,
• Yan Chen,
• Guang Zhang,
• Shi-Yong Liu and
• Long Chen

Beilstein J. Nanotechnol. 2021, 12, 607–623, doi:10.3762/bjnano.12.50

• units. The challenges and prospects associated with D–A polymer-based photocatalysts are described as well. Keywords: π-conjugated polymeric photocatalysts; donor–acceptor junctions; nanostructure semiconductors; photocatalytic hydrogen production; Introduction To date, fossil fuels still are the

• and Honda [4] reported the first example of hydrogen production by photocatalytic water splitting in 1972, using TiO2 as the photocatalyst under ultraviolet-light irradiation. Since then, numerous semiconductors have been explored for photocatalytic hydrogen production (PHP) by water splitting, which

• moiety as a strong electron-withdrawing group, has been widely used to design organic semiconductors for diverse applications, such as organic solar cells [85], organic light-emitting diodes [86], and organic field-effect transistors [87]. Researchers have also incorporated cyano moieties into the design

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• the bandgap size of the AZO/Al2O3 layers deposited during the ALD process described in this paper. Knowing the bandgap size of AZO and GaAs, as well as the doping levels and the densities of states in the relevant bands of the semiconductors, we are able to construct the energy diagram of the

Influence of electrospray deposition on C₆₀ molecular assemblies

• Antoine Hinaut,
• Sebastian Scherb,
• Sara Freund,
• Zhao Liu,
• Thilo Glatzel and
• Ernst Meyer

Beilstein J. Nanotechnol. 2021, 12, 552–558, doi:10.3762/bjnano.12.45

• ][25][28] and metal oxide semiconductors [23][24], while large three-dimensional molecular islands or clusters have been revealed on ionic crystals or bulk insulators [22][26][27][29]. Most of the studies have been performed after thermal evaporation (TE) of C60 from a crucible, but C60 is also one of

Interface interaction of transition metal phthalocyanines with strontium titanate (100)

• Reimer Karstens,
• Thomas Chassé and
• Heiko Peisert

Beilstein J. Nanotechnol. 2021, 12, 485–496, doi:10.3762/bjnano.12.39

• at interfaces; strontium titanate; transition metal phthalocyanines; Introduction Interfaces between organic semiconductors and oxides are of increasing fundamental interest. Such interfaces determine key properties of a broad variety of electronic devices. Common examples are dye-sensitized solar

Boosting of photocatalytic hydrogen evolution via chlorine doping of polymeric carbon nitride

• Malgorzata Aleksandrzak,
• Michalina Kijaczko,
• Wojciech Kukulka,
• Daria Baranowska,
• Martyna Baca,
• Beata Zielinska and
• Ewa Mijowska

Beilstein J. Nanotechnol. 2021, 12, 473–484, doi:10.3762/bjnano.12.38

• . Three of the most popular modifications are: (i) coupling with other semiconductors [22][23], (ii) self-optimization of the crystal structure [24][25], and (iii) doping with heteroatoms [26][27]. Therefore, PCN is called the "holy grail" because it is believed that its modifications will result in

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• spintronic applications. However, to achieve a reliable injection and detection of spin-polarized electrons in spintronic devices, appropriate heterostructures between semiconductors and magnetic alloys [9][10] need to be formed. Hence, a tailored growth process that preserves the injection efficiency and

Nickel nanoparticle-decorated reduced graphene oxide/WO₃ nanocomposite – a promising candidate for gas sensing

• Ilka Simon,
• Alexandr Savitsky,
• Rolf Mülhaupt,
• Vladimir Pankov and
• Christoph Janiak

Beilstein J. Nanotechnol. 2021, 12, 343–353, doi:10.3762/bjnano.12.28

• ][9]. Metal oxide semiconductors (MOS) are the most commonly used gas sensors [10]. MOS can be divided into n-type and p-type MOS. In n-type MOS electrons are the majority charge carriers, while in p-type MOS holes are the majority charge carriers [6]. The exposure to reducing gases causes a decrease

• composite create a hierarchical nanostructure and facilitate the diffusion of NO2 molecules, increasing the contacts and enhancing the chemisorption of the gas. rGO has large specific area and more active sites. Gas sensors of n-type semiconductors based on oxides exhibit resistance changes induced by

Extended iron phthalocyanine islands self-assembled on a Ge(001):H surface

• Rafal Zuzak,
• Marek Szymonski and
• Szymon Godlewski

Beilstein J. Nanotechnol. 2021, 12, 232–241, doi:10.3762/bjnano.12.19

• surfaces, since those semiconductors are at the foundations of traditional electronics. Finally, hydrogen-passivated semiconductors may also provide sufficient isolation for organic molecules to allow for the growth of molecular crystals. It has been already shown that PTCDA molecules form ordered islands

• ][46][47][48][49][50][51][52][53][54][55][56][57]. However, the need to electronically decouple organic moieties from the underlying substrates directed the attention towards insulators and/or semiconductors. Metal phthalocyanines on semiconducting TiO2 surfaces have been frequently studied in the

A review on the green and sustainable synthesis of silver nanoparticles and one-dimensional silver nanostructures

• Sina Kaabipour and
• Shohreh Hemmati

Beilstein J. Nanotechnol. 2021, 12, 102–136, doi:10.3762/bjnano.12.9

• [262][263]. This characteristic is obtained due to the rod-shape morphology of some plant viruses such as TMV. The synthesis of AgNPs using 1D templates can facilitate their application as bio-semiconductors [263]. One of the main advantages of viral templates is the simple synthesis of small AgNPs

ZnO and MXenes as electrode materials for supercapacitor devices

• Ameen Uddin Ammar,
• Ipek Deniz Yildirim,
• Feray Bakan and
• Emre Erdem

Beilstein J. Nanotechnol. 2021, 12, 49–57, doi:10.3762/bjnano.12.4

• in semiconductors is fundamentally the same, regardless of composition. Defects generate bandgap states that either generate electrons in the conduction band or holes in the valence band. Therefore, we believe that the discussion, based on experimental results, of the magnitude of this effect for 2D

• environment of the lattice atoms and defects. With the aid of advanced characterization techniques one may get valuable information on site symmetry, atomic bonding, and, in particular, on the bandgap energy of semiconductors. Raman, photoluminescence (PL), UV–vis, and electron paramagnetic resonance (EPR

• ]. Indeed, this emission has nothing to do with the defects. In semiconductors; one may obtain a hint about the value of Eg. For instance, for bulk ZnO, the emission due to the e–h recombination appears in the UV region around 380 nm, which corresponds to ca. 3.2 eV. Hence, this emission is also called near

Unravelling the interfacial interaction in mesoporous SiO₂@nickel phyllosilicate/TiO₂ core–shell nanostructures for photocatalytic activity

• Bridget K. Mutuma,
• Xiluva Mathebula,
• Isaac Nongwe,
• Bonakele P. Mtolo,
• Boitumelo J. Matsoso,
• Rudolph Erasmus,
• Zikhona Tetana and
• Neil J. Coville

Beilstein J. Nanotechnol. 2020, 11, 1834–1846, doi:10.3762/bjnano.11.165

• metal oxides, such as ZrO2 [16] and SiO2 [17], influence the morphology and surface features of the resulting binary metal oxide semiconductors. Moreover, these binary metal oxide semiconductors act as charge-transfer catalysts and significantly reduce the electron–hole recombination [18][19]. Another

• functionality of nanomaterials greatly influence their photoactivity. UV–vis diffuse reflectance spectroscopy is a useful technique for probing the optoelectronic properties, band structure and molecular energy levels of semiconductors. It gives relevant information on the optical activity of nanomaterials as

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• Rue de la Girafe, 14000 Caen, France NXP Semiconductors, Esplanade Anton Philips 2, 14905, Colombelles, France 10.3762/bjnano.11.159 Abstract This work addresses the need for a comprehensive methodology for nanoscale electrical testing dedicated to the analysis of both “front end of line” (FEOL

• ; integrated PIN diode; nanoprobing; scanning probe microscopy (SPM); scanning microwave impedance microscopy (sMIM); spectroscopy; Introduction In “front end of line” (FEOL) processing, the control, detection, and quantification of the effective 2D distributions of active dopants in semiconductors are

• the back-contact resistance [11], is experimentally determined. Therefore, at a fixed applied bias, the SSRM measurements map the variation in concentration of mobile majority carriers in doped semiconductors. A high load on the tip is required to obtain the spreading resistance. In fact, for silicon

Absorption and photoconductivity spectra of amorphous multilayer structures

• Oxana Iaseniuc and
• Mihail Iovu

Beilstein J. Nanotechnol. 2020, 11, 1757–1763, doi:10.3762/bjnano.11.158

• applied field becomes higher than the internal electrical field. For amorphous semiconductors the barrier height of an Al–semiconductor contact, with a work function of φm = 4.18 eV, is φb = 0.40–0.75 eV [14][17]. This is very important from a practical point of view, because there is the possibility to

• polarity for all investigated amorphous thin-film structures. This result can be explained by drift processes of non-equilibrium carriers in amorphous semiconductors as well as by the contact phenomena between interfaces of different amorphous materials and the metallic electrodes. Transmission spectra T

Antimicrobial metal-based nanoparticles: a review on their synthesis, types and antimicrobial action

• Matías Guerrero Correa,
• Fernanda B. Martínez,
• Cristian Patiño Vidal,
• Camilo Streitt,
• Juan Escrig and
• Carol Lopez de Dicastillo

Beilstein J. Nanotechnol. 2020, 11, 1450–1469, doi:10.3762/bjnano.11.129

• nanocages with diameters ranging from 300 to 500 nm [55]. The solvothermal synthesis method is a technique used to prepare a variety of materials, such as metals, semiconductors, ceramics, and polymers. In this process, the chemical reaction takes place in a sealed vessel where solvents are brought to a

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• within the nanostructures and are optimally delivered to active regions of the device [1]. An application for this effect is to fabricate antireflective surfaces, which has been extensively studied not only for semiconductors, but also for glass and polymer surfaces [2][3]. This property is widely used

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• GaAs [62], and P vacancies in InP(110) [63]. Due to the common nature of these defects in other semiconductors and the similarity in imaging character, we thus attribute this defect to most likely be a Si vacancy. Further discussion of our assignment and additional evidence is given later as part of