Development of a new hybrid approach combining AFM and SEM for the nanoparticle dimensional metrology

• Loïc Crouzier,
• Alexandra Delvallée,
• Sébastien Ducourtieux,
• Laurent Devoille,
• Guillaume Noircler,
• Christian Ulysse,
• Olivier Taché,
• Elodie Barruet,
• Christophe Tromas and
• Nicolas Feltin

Beilstein J. Nanotechnol. 2019, 10, 1523–1536, doi:10.3762/bjnano.10.150

• deposition because its roughness is relatively low (Sq = 0.3 nm), its surface physicochemical features are particularly suitable for an optimized NP dispersion and its electrical properties are compatible with SEM measurements [11]. In the Figure 1 is also shown the principle implemented for measuring the

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

• Petronela Prepelita,
• Ionel Stavarache,
• Doina Craciun,
• Florin Garoi,
• Catalin Negrila,
• Beatrice Gabriela Sbarcea and
• Valentin Craciun

Beilstein J. Nanotechnol. 2019, 10, 1511–1522, doi:10.3762/bjnano.10.149

• Thin oxide films, used as contact electrodes [1][2][3][4], are considered to be important components of photovoltaic cells [5][6]. As an electrode candidate for solar cells, an ITO film [7][8] must present excellent optical and electrical properties for increased energy generation. At this time, the

• of ITO in various applications increases when the electrical properties are improved. Various deposition techniques have been used to obtain TCO thin films, such as: vacuum thermal evaporation [15][16], chemical vapor deposition [17], sol–gel [18], pyrolysis spray techniques [5][19], magnetron

• applied thermal treatment conditions, resulting in the improved optical and electrical properties. For all sets of samples, it was found that the bandgap width corresponding to direct transitions has values similar to those reported in the literature [39], that is, they decrease with increasing thickness

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2019, 10, 1125–1130, doi:10.3762/bjnano.10.112

• -excited defect states at the same level. It is also implied that the electrical properties, including SS and off-current, directly depend on the annealing temperature regardless whether or not there is light irradiation. The devices annealed at different temperatures were then exposed to a NBIS

• the valence band (EV). When the annealing temperature increases to 350 °C, the transfer curves exhibit outstanding initial electrical properties. However, a positive shift accompanied by the appearance of a hump and SS degradation occurs and gradually increases with increasing stress duration. The

• TFT is annealed at 400 °C, the attenuation of the electrical properties is equivalent to that of the 350 °C sample. However, due to the lesser quality of the IGZO layer and its adjacent interfaces, the transfer curves exhibit a big hump in the forward scan and a long-range shift in the reverse scan

On the transformation of “zincone”-like into porous ZnO thin films from sub-saturated plasma enhanced atomic layer deposition

• Alberto Perrotta,
• Julian Pilz,
• Stefan Pachmajer,
• Antonella Milella and
• Anna Maria Coclite

Beilstein J. Nanotechnol. 2019, 10, 746–759, doi:10.3762/bjnano.10.74

• is targeted, since its crystal growth and texture affect the optical and (piezo)electrical properties of the material [64][65][66]. The crystallinity of the pristine zincone-like layers and its evolution during and after calcination were monitored using in situ X-ray diffraction (XRD) and grazing

A carrier velocity model for electrical detection of gas molecules

• Ali Hosseingholi Pourasl,
• Sharifah Hafizah Syed Ariffin,
• Mohammad Taghi Ahmadi,
• Razali Ismail and
• Niayesh Gharaei

Beilstein J. Nanotechnol. 2019, 10, 644–653, doi:10.3762/bjnano.10.64

• remarkable changes in their electrical characteristics when exposed to different gases through molecular adsorption. In this paper, the adsorption effects of the target gas molecules (CO and NO) on the electrical properties of the armchair graphene nanoribbon (AGNR)-based sensor are analytically modelled

• detection approaches have been studied, and their electrical properties have also been investigated [5][6][7][8][9]. In addition, many researchers have experimentally worked on the fabrication of graphene and GNR-based biosensors and gas sensors [10][11][12][13][14][15]. Most of the previous works are

• . Results and Discussion In the modelling of the gas sensor, the velocity of the carriers can be used as one of the key parameters to discover and investigate the molecular adsorption effects on the electrical properties of the sensor, which is our focus in this paper. Furthermore, experimental and

Widening of the electroactivity potential range by composite formation – capacitive properties of TiO₂/BiVO₄/PEDOT:PSS electrodes in contact with an aqueous electrolyte

• Konrad Trzciński,
• Mariusz Szkoda,
• Andrzej P. Nowak,
• Marcin Łapiński and
• Anna Lisowska-Oleksiak

Beilstein J. Nanotechnol. 2019, 10, 483–493, doi:10.3762/bjnano.10.49

• the electroactivity range from ΔE = 0.9 V (from −1.0 V to −0.1 V) for Ti/TiO2 to ΔE = 1.9 V (from −1.0 V to 0.9 V) for Ti/TiO2:H. An extended range of potential where electrodes exhibit electrochemical activity yields a greater capacity. Moreover, due to the improvement of electrical properties, the

Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices

• Marwa Mokni,
• Gianluigi Maggioni,
• Abdelkader Kahouli,
• Sara M. Carturan,
• Walter Raniero and
• Alain Sylvestre

Beilstein J. Nanotechnol. 2019, 10, 428–441, doi:10.3762/bjnano.10.42

• C/Al2O3 bilayers applied to medical devices exhibit a longer-term reliability in comparison to pure PPXC. The goal of this study is to improve the electrical properties of parylene C used in advanced electronic devices [52][53][54] as a gate dielectric or an insulation coating. The challenge is to

Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• stoichiometry (La1−yMnO3−(3y/2)+δ and LaMn1−zO3−(3z/2)+δ), which leads to changes in its electrical properties [5]. Here it is important to notice that for a La/Mn ratio of 1 LaMnO3+δ corresponds to the simplified formula for cation deficient La1−εMn1−εO3, where ε = δ/(3 + δ). The apparent oxygen excess in LMO

Sub-wavelength waveguide properties of 1D and surface-functionalized SnO₂ nanostructures of various morphologies

• Venkataramana Bonu,
• Binaya Kumar Sahu,
• Arindam Das,
• Sankarakumar Amirthapandian,
• Sandip Dhara and
• Harish C. Barshilia

Beilstein J. Nanotechnol. 2019, 10, 379–388, doi:10.3762/bjnano.10.37

• SnO2 NSs. Depending on the growth procedure, these metal oxide nanostructures offer varied structural and electrical properties. For instance, Zhu et al. [23] demonstrated a huge variation in the electrical conductivity in NWs grown at the liquid–solid (LS) interface and VS interface. In this article

Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices

• Eduardo Nery Duarte de Araujo,
• Thiago Alonso Stephan Lacerda de Sousa,
• Luciano de Moura Guimarães and
• Flavio Plentz

Beilstein J. Nanotechnol. 2019, 10, 349–355, doi:10.3762/bjnano.10.34

• electrical properties to surface phenomena and the existence of several routes for its surface functionalization, grant this 2D material plenty of application possibilities [1][2][3][4][5][6][7][8]. Among the several synthesis methods of high-quality graphene, chemical vapor deposition (CVD) stands out as

• addition, we show that the size of these well-ordered domains is highly influenced by post-photolithography cleaning processes. Finally, we show that by using poly(dimethylglutarimide) (PMGI) as a protection layer, the production yield of CVD graphene devices is enhanced. Conversely, their electrical

• properties are deteriorated as compared with devices fabricated by conventional production methods. Keywords: CVD graphene; defects; mobility; well-ordered domain; Introduction The unique properties of graphene, such as high conductivity, high carrier mobility at room temperature, high sensitivity of the

Interaction of Te and Se interlayers with Ag or Au nanofilms in sandwich structures

• Arkadiusz Ciesielski,
• Lukasz Skowronski,
• Marek Trzcinski,
• Ewa Górecka,
• Wojciech Pacuski and
• Tomasz Szoplik

Beilstein J. Nanotechnol. 2019, 10, 238–246, doi:10.3762/bjnano.10.22

• adhesion of plasmonic metals to almost any ultrasmooth substrate. However, most of the aforementioned elements migrate inside the metal structure as a result of either grain boundary diffusion or segregation [20][21]. This deteriorates both the optical and electrical properties of the plasmonic layers. The

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

• Florian Dumitrache,
• Iuliana P. Morjan,
• Elena Dutu,
• Ion Morjan,
• Claudiu Teodor Fleaca,
• Monica Scarisoreanu,
• Alina Ilie,
• Marius Dumitru,
• Cristian Mihailescu,
• Adriana Smarandache and
• Gabriel Prodan

Beilstein J. Nanotechnol. 2019, 10, 9–21, doi:10.3762/bjnano.10.2

• reactive mixture containing tetramethyltin (SnMe4) and diethylzinc (ZnEt2) vapors, diluted Ar, O2 and SF6. Their structural, morphological, optical and electrical properties are reported in this work. The X-ray diffraction (XRD) analysis shows that the nanoparticles possess a tetragonal SnO2 crystalline

• at the nanoscale – the so called "quantum size effect". Therefore, it is very important to synthesize nanoparticles with a narrow size distribution and with a desired mean diameter in order to control their optical and electrical properties [1]. The properties that make nanometer-sized SnO2 highly

• pyrolysis of SnMe4 and ZnEt2 sensitized with a SF6 gas flow, all in oxidative mixtures. We also report a study on the structural, optical and electrical properties of such Zn/F co-doped SnO2 nanoparticles. Depending on the experimental parameters, different Zn and F doping levels in SnO2-based nanocrystals

Electrostatic force microscopy for the accurate characterization of interphases in nanocomposites

• Diana El Khoury,
• Richard Arinero,
• Jean-Charles Laurentie,
• Mikhaël Bechelany,
• Michel Ramonda and
• Jérôme Castellon

Beilstein J. Nanotechnol. 2018, 9, 2999–3012, doi:10.3762/bjnano.9.279

• , the force gradient G (Nm−1), can both be expressed as the sum of the DC, ω and 2ω components. While the force and force gradient detection methods can provide relatively similar information on the electrical properties of the sample, the force gradient detection method is expected to offer higher

Graphene-enhanced metal oxide gas sensors at room temperature: a review

• Dongjin Sun,
• Yifan Luo,
• Marc Debliquy and
• Chao Zhang

Beilstein J. Nanotechnol. 2018, 9, 2832–2844, doi:10.3762/bjnano.9.264

• ], graphene has been widely used in various fields such as photocatalysts, lithium battery electrodes, supercapacitors, gas sensors and electronic devices [2][3][4] due to its high specific surface area (2630 m2/g) and high carrier mobility at room temperature [5]. The electrical properties of graphene are

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

• Dapeng Wang and
• Mamoru Furuta

Beilstein J. Nanotechnol. 2018, 9, 2573–2580, doi:10.3762/bjnano.9.239

• works have highlighted that the electrical properties of the device (for both the initial and after stress conditions) such as threshold voltage, on/off ratio, and field effect mobility, can be effectively adjusted by controlling the active layer thickness [19][20][21][22][23]. Up to now, the impact of

• thicknesses were prepared by magnetron sputtering. The initial electrical properties and the photoleakage current of a-IGZO TFTs with various active layer thicknesses were investigated. The subthreshold value slightly increased while the threshold voltage (Vth) and mobility (μ) decreased with increasing TIGZO

• active layer thicknesses (TIGZO) measured at VDS = 20.1 V are shown in Figure 1b. Table 1 summarizes the electrical properties, such as field effect mobility in the saturation region (μsat), threshold voltage Vth (VGS at IDS of 1 nA), hysteresis of the transfer curves (the difference of VGS at IDS of 1

Thickness-dependent photoelectrochemical properties of a semitransparent Co₃O₄ photocathode

• Malkeshkumar Patel and
• Joondong Kim

Beilstein J. Nanotechnol. 2018, 9, 2432–2442, doi:10.3762/bjnano.9.228

• Kirkendall diffusion thermal oxidation of Co nanoparticles. The thickness-dependent structural, physical, optical, and electrical properties of Co3O4 samples are comprehensively studied. Our analysis shows that two bandgaps of 1.5 eV and 2.1 eV coexist with p-type conductivity in porous and semitransparent

• with direct Eg values of around 1.5 and 2.1 eV is confirmed. Due to the porous and nanocrystalline nature of the Co3O4 samples, a blueshift in the Eg values is seen, compared to the dense 70 nm thick Co3O4 sample. Table 1 shows the summarized thickness-dependent optical and electrical properties of the

• Co3O4 film are primarily due to its enhanced porosity and optical absorption. We also studied the thickness dependent optical and electrical properties of Co3O4 film grown by reactive sputtering [17]. In fact, we can see the systematic variation of Mott–Schottky characteristics, and so of the VFB and NA

Performance analysis of rigorous coupled-wave analysis and its integration in a coupled modeling approach for optical simulation of complete heterojunction silicon solar cells

• Ziga Lokar,
• Benjamin Lipovsek,
• Marko Topic and
• Janez Krc

Beilstein J. Nanotechnol. 2018, 9, 2315–2329, doi:10.3762/bjnano.9.216

• . Besides the optical properties, proper passivation techniques of textured interfaces are crucial to keep surface recombination velocities as low as possible and thus to maintain the good electrical properties of the device [8][9]. To design and optimize textures applied to the front and/or rear side of

A scanning probe microscopy study of nanostructured TiO₂/poly(3-hexylthiophene) hybrid heterojunctions for photovoltaic applications

• Laurie Letertre,
• Roland Roche,
• Olivier Douhéret,
• Hailu G. Kassa,
• Denis Mariolle,
• Nicolas Chevalier,
• Łukasz Borowik,
• Philippe Dumas,
• Benjamin Grévin,
• Roberto Lazzaroni and
• Philippe Leclère

Beilstein J. Nanotechnol. 2018, 9, 2087–2096, doi:10.3762/bjnano.9.197

• . In particular, hybrid solar cells can possibly benefit from the low economic and energy costs of production, high absorbance and tailorable absorption spectrum of the organic materials on the one hand, and from the good stability, absorption and electrical properties of the inorganic materials on the

• are directly related to ΦTiO2 and the P3HT-COOH density, respectively. Due to the small thickness of the P3HT-COOH layer on top of the TiO2 columns, the photocurrent contrast recorded with the tip in direct contact with the surface is most probably ruled by the TiO2 electrical properties. This

Electrical characterization of single nanometer-wide Si fins in dense arrays

• Steven Folkersma,
• Janusz Bogdanowicz,
• Andreas Schulze,
• Paola Favia,
• Dirch H. Petersen,
• Ole Hansen,
• Henrik H. Henrichsen,
• Peter F. Nielsen,
• Lior Shiv and
• Wilfried Vandervorst

Beilstein J. Nanotechnol. 2018, 9, 1863–1867, doi:10.3762/bjnano.9.178

• architectures such as the fin field-effect transistor (finFET) [1] has raised the need for measuring the electrical properties of nanometer-wide conducting features [2]. Recently, it has been shown that the micro four-point probe (μ4pp) technique, which is commonly used for sheet resistance measurements on

Improving the catalytic activity for hydrogen evolution of monolayered SnSe_2(1−x)S_2x by mechanical strain

• Sha Dong and
• Zhiguo Wang

Beilstein J. Nanotechnol. 2018, 9, 1820–1827, doi:10.3762/bjnano.9.173

• between 1.85 and 1.99 eV by varying x from 0 to 1. Other 2D-TMDs alloy nanosheets, such as Mo1−xWxSe2 [39] and WS2(1−x)Se2x [40][41], have also shown tuneable bandgaps and different electrical properties by varying the value of x. Monolayer SnS2 and SnSe2 have indirect bandgaps of 2.1 and 1.1 eV

Nanoscale electrochemical response of lithium-ion cathodes: a combined study using C-AFM and SIMS

• Jonathan Op de Beeck,
• Nouha Labyedh,
• Alfonso Sepúlveda,
• Valentina Spampinato,
• Alexis Franquet,
• Thierry Conard,
• Philippe M. Vereecken,
• Wilfried Vandervorst and
• Umberto Celano

Beilstein J. Nanotechnol. 2018, 9, 1623–1628, doi:10.3762/bjnano.9.154

•  1a. The three samples mentioned above are all deposited on a metallic current collector (Ni or Pt) on top of a silicon wafer. Spatially resolved electrical properties are observed with nanometer resolution by scanning a biased conductive AFM tip across the top surface. Unless specified otherwise, we

• utilization. The latter could be representative of the known fact that lithium shows a strong tendency to be localized and often is trapped at grain boundaries [13]. However, while C-AFM proves to be very useful to sense the electrical properties of the cathode materials, including the areal distribution and

• Li-rich and Li-deficient areas. A striking correspondence (for example in Figure 2a, boxes 1–3) between the highly conductive regions and the high Li-concentration regions can be observed indicating the relation between electrical properties the chemical composition of that area. In other words, our

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• , optical and electrical properties of P- and B-incorporating Si NCs in both embedding dielectrics. We will show that, despite some minor differences in the four different sample configurations, no free carriers associated to a doping behaviour of P or B are observed. Experimental Superlattices of SiO2 and

• used at H2 anneals to passivate Si-DBs (450–500 °C). Such a H-passivation mechanism of dopants requires their substitutional incorporation, which occurs apparently only in very small fractions for dopants in Si NCs (see section Electrical properties below). Therefore, neither from experimental evidence

• nor from fundamental considerations, it can be argued that the doping effect of P or B in Si NCs is obscured by H2-passivation. In contrast, the passivation of DB-defects at the Si/SiO2 interface often improves the interpretability of the measured data. Electrical properties If free charge carriers

Tailoring polarization and magnetization of absorbing terahertz metamaterials using a cut-wire sandwich structure

• Hadi Teguh Yudistira,
• Shuo Liu,
• Tie Jun Cui and
• Han Zhang

Beilstein J. Nanotechnol. 2018, 9, 1437–1447, doi:10.3762/bjnano.9.136

• . Equation 3 can be simplified as Equation 4 shows that a high imaginary refractive index is required to achieve zero transmittance. To achieve high absorbance, the impedance of the metamaterial should match the air impedance and the imaginary part of the refractive index value should be high. The electrical

• properties of the thin metallic bar deposited on the substrate strongly deviated from that of the bulk metallic [37]. The Drude model [38] was used for calculating the permittivity of thin gold metallic bars in the software CST microwave studio [39], where with ωp,Au = 1.38 × 1016 rad/s and ΓAu = 0.11

A novel copper precursor for electron beam induced deposition

• Caspar Haverkamp,
• George Sarau,
• Mikhail N. Polyakov,
• Ivo Utke,
• Marcos V. Puydinger dos Santos,
• Silke Christiansen and
• Katja Höflich

Beilstein J. Nanotechnol. 2018, 9, 1220–1227, doi:10.3762/bjnano.9.113

• investigated concerning their morphology, composition and electrical properties. Transmission and reflection spectra of planar deposits of various heights served as input for the retrieval of the complex permittivity of the copper-containing material. The obtained values were used to numerically model the

Electrostatic force spectroscopy revealing the degree of reduction of individual graphene oxide sheets

• Yue Shen,
• Ying Wang,
• Yuan Zhou,
• Chunxi Hai,
• Jun Hu and
• Yi Zhang

Beilstein J. Nanotechnol. 2018, 9, 1146–1155, doi:10.3762/bjnano.9.106

• microscopy (TEM) [14] has shown color changes and atomic scale feature changes, respectively, in GO sheets after reduction. However, any changes in performance are not identified, and differentiating rGO sheets with a similar degree of reduction is difficult. Based on the changes in the electrical properties