Tandem polymer solar cells: simulation and optimization through a multiscale scheme

• Fanan Wei,
• Ligang Yao,
• Fei Lan,
• Guangyong Li and
• Lianqing Liu

Beilstein J. Nanotechnol. 2017, 8, 123–133, doi:10.3762/bjnano.8.13

• algorithm (GA), a global optimal PCE value was found and the corresponding device parameters were obtained. In order to prove the viability of our proposed simulation approach, two different configurations of the tandem devices, as shown in Figure 1b, were both tested and compared with each other

• accurate optimization results are required for tandem polymer solar cells. For the purpose of relieving computational load and optimizing tandem device structures with all the structure parameters considered, we employed two searching algorithms: simplex searching [30] and GA [31]. In simplex searching

• according to the schematic and flow chart (Figure S3 and S4, in Supporting Information File 1). On the other hand, for GA searching, six samples (six points) with four traits (the four variables) were prepared. During each iteration, the best two samples were selected as the parent ones. The child samples

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• occupy Ga vacancies in the course of GaAs layer growth and behave as an acceptor-type impurity partially compensating the concentration of Te+ donors. The formation of neutral SnTe complexes results in a decrease in electrically active donors Sn+ + Te+ incorporated in the GaAs layer. We consider that

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• sequence of a semiconductor laser, mainly consisting of several layers of Ga(As)Sb quantum dots (QD) (as active material) embedded in GaAs, surrounded by n- and p-doped layers of Al0.5Ga0.5As (for the diode and waveguide structure), has been grown on an n-doped GaAs substrate (called sample type B, for

• ), the active area with eight layers of Ga(As)Sb quantum dots (QD) between 50 nm thick GaAs barriers (B3), the lower n-Al0.5Ga0.5As cladding (B2) and, finally, the n-GaAs buffer and substrate (B1). The different properties of the layers during etching become particularly obvious, when taking a look at

Numerical investigation of depth profiling capabilities of helium and neon ions in ion microscopy

• Patrick Philipp,
• Lukasz Rzeznik and
• Tom Wirtz

Beilstein J. Nanotechnol. 2016, 7, 1749–1760, doi:10.3762/bjnano.7.168

• surface by disordering the surface structure and forming hydrogenated amorphous carbon [4]. Similarly, Ga+ irradiation of polydimethylsiloxane (PDMS) results in micro- and nanopatterns with controlled stiffness for potential applications in tissue engineering [5]. Overall, the properties depend on the

Thickness-modulated tungsten–carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields

• Ismael García Serrano,
• Javier Sesé,
• Isabel Guillamón,
• Hermann Suderow,
• Sebastián Vieira,
• Manuel Ricardo Ibarra and
• José María De Teresa

Beilstein J. Nanotechnol. 2016, 7, 1698–1708, doi:10.3762/bjnano.7.162

• in the present work from 60 to 140 nm, which allows us to determine the effect of its commensurability with the intervortex distance. The W–C deposits have been grown by FIBID inside commercial Helios 650 dual-beam equipment from FEI, which includes a Ga+ FIB column. The equipment includes a gas

• -injection system for the W(CO)6 precursor. The precursor gas is spread locally onto the substrate, where it becomes dissociated by the FIB. The composition of flat deposits has been previously studied with X-ray photoelectron spectroscopy [13], giving as a result (in atom %), W (40%), C (43%), Ga (10%) and

• the nature of the growth by FIBID. In the regions directly scanned by the ion beam during growth, a higher amount of Ga ions is expected compared to the regions not directly scanned by the ion beam, where only scattered Ga ions from nearby regions are present. Quantitative analysis of the composition

Viability and proliferation of endothelial cells upon exposure to GaN nanoparticles

• Tudor Braniste,
• Ion Tiginyanu,
• Tibor Horvath,
• Simion Raevschi,
• Serghei Cebotari,
• Marco Lux,
• Axel Haverich and
• Andres Hilfiker

Beilstein J. Nanotechnol. 2016, 7, 1330–1337, doi:10.3762/bjnano.7.124

• epitaxy (HVPE) in two stages, as previously described [29]. Metallic gallium, ammonia (NH3) gas, hydrogen chloride (HCl) gas, and hydrogen (H2) were used as source materials and carrier gases. In the source zone, GaCl was formed as a result of chemical reactions between gaseous HCl and liquid Ga. GaCl and

Experimental and simulation-based investigation of He, Ne and Ar irradiation of polymers for ion microscopy

• Lukasz Rzeznik,
• Yves Fleming,
• Tom Wirtz and
• Patrick Philipp

Beilstein J. Nanotechnol. 2016, 7, 1113–1128, doi:10.3762/bjnano.7.104

• HIM has been developed for high resolution electron microscopy and nanofabrication using the He+ or Ne+-emitting atomic level ion source (ALIS) [4]. Compared to cluster ion bombardment, the use of monoatomic primary ion species (such as Cs+, O−, Ga+) for imaging in SIMS allows significantly higher

Voltammetric determination of polyphenolic content in pomegranate juice using a poly(gallic acid)/multiwalled carbon nanotube modified electrode

• Refat Abdel-Hamid and
• Emad F. Newair

Beilstein J. Nanotechnol. 2016, 7, 1104–1112, doi:10.3762/bjnano.7.103

• chronocoulometry. It was found that gallic acid (GA) exhibits a superior electrochemical response on the PGA/MWCNT/GCE sensor in comparison with bare GCE. The results reveal that a PGA/MWCNT/GCE sensor can remarkably enhance the electro-oxidation signal of GA as well as shift the peak potentials towards less

• positive potential values. The dependence of peak current on accumulation potential, accumulation time and pH were investigated by square-wave voltammetry (SWV) to optimize the experimental conditions for the determination of GA. Using the optimized conditions, the sensor responded linearly to a GA

• phenolic content; Introduction Gallic acid (GA) is a natural polyphenolic compound found in fruits, vegetables and several other plants [1]. The study of the role of GA in providing better therapeutic outcomes against arsenic-induced toxicity showed that GA is effective against arsenic-induced oxidative

Magnetic switching of nanoscale antidot lattices

• Ulf Wiedwald,
• Joachim Gräfe,
• Kristof M. Lebecki,
• Maxim Skripnik,
• Felix Haering,
• Gisela Schütz,
• Paul Ziemann,
• Eberhard Goering and
• Ulrich Nowak

Beilstein J. Nanotechnol. 2016, 7, 733–750, doi:10.3762/bjnano.7.65

• the net current direction. The approximately 60 nm wide and 20 µm long FIB cuttings were performed using Ga+ ions with a current of 10 nA for a exposure time of 9 minutes, each. Figure 7b and Figur 7c show the resulting FIB channels with the current applied (b) along the nn-direction and (c) along the

Rigid multipodal platforms for metal surfaces

• Michal Valášek,
• Marcin Lindner and
• Marcel Mayor

Beilstein J. Nanotechnol. 2016, 7, 374–405, doi:10.3762/bjnano.7.34

Simultaneous cancer control and diagnosis with magnetic nanohybrid materials

• Reza Saadat and
• Franz Renz

Beilstein J. Nanotechnol. 2016, 7, 121–125, doi:10.3762/bjnano.7.14

• detect cancer tissue with radiopharmaceuticals. By substitution of the Ga isotope with an alpha emitter the same compound could be used for cancer treatment. Furthermore the nanoparticles were connected to pH-sensitive complexes, enabling a pH-controlled assembly/disassembly and therefore the spreading

• phosphonate containing chelate ligand and injected into the body. The tracer enriches in the hydroxyapatite (Ca10(PO4)6(OH)2) and can be used for investigations of the bone metabolism [10][11][12]. Modifications of the functional groups of the ligand enables the use of the Ga complex in a different way: PET

• -analogue Ga-DOTA (DOTA = 1,4,7,10-tetraazacyclododecane-1,4,7,10-tetraacetic acid) complexes were synthesized and linked to Fe3O4 MNP. In this manner it is possible to transport the PET tracer with an external magnetic field right to the target location. The functionalized MNP are linked to each other via

Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

• Kuang-Yang Kou,
• Yu-En Huang,
• Chien-Hsun Chen and
• Shih-Wei Feng

Beilstein J. Nanotechnol. 2016, 7, 75–80, doi:10.3762/bjnano.7.9

• , doping impurities, such as B, Al, and Ga, can improve the electrical transport properties of ZnO [18]. There are two benefits to using a B-doped ZnO (ZnO@B) film as the TCO layer. First, B has the smallest ionic radius among the three dopants (B3+: 0.23Å, Al3+: 0.54 Å, Ga3+: 0.62 Å,), which results in

A single-source precursor route to anisotropic halogen-doped zinc oxide particles as a promising candidate for new transparent conducting oxide materials

• Daniela Lehr,
• Markus R. Wagner,
• Johanna Flock,
• Julian S. Reparaz,
• Clivia M. Sotomayor Torres,
• Alexander Klaiber,
• Thomas Dekorsy and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2015, 6, 2161–2172, doi:10.3762/bjnano.6.222

• with typical shallow donor bound excitons in the neutral charge state and is found very close to the well-known position of the shallow Ga donor D0X I8 or Al D0X I6 [73]. In addition an emission line at 3.333 eV is visible in the spectra of ZnO1−xClx with x = 2.5%. This transition, which is labeled Y0

High I_on/I_off current ratio graphene field effect transistor: the role of line defect

• Mohammad Hadi Tajarrod and
• Hassan Rasooli Saghai

Beilstein J. Nanotechnol. 2015, 6, 2062–2068, doi:10.3762/bjnano.6.210

• . Accordingly, the transmission probability of carriers through the device can be written as: where is the coupling between source (drain) contact and the device region; represents the retarded (advanced) Green's function for the device region, which follows the relationship of Ga = [Gr]†, with gs/d being

Analyzing collaboration networks and developmental patterns of nano-enabled drug delivery (NEDD) for brain cancer

• Ying Huang,
• Jing Ma,
• Alan L. Porter,
• Seokbeom Kwon and
• Donghua Zhu

Beilstein J. Nanotechnol. 2015, 6, 1666–1676, doi:10.3762/bjnano.6.169

• Institute of Technology, Atlanta, GA 30332, USA Search Technology, Inc., Atlanta, GA 30092, USA 10.3762/bjnano.6.169 Abstract The rapid development of new and emerging science & technologies (NESTs) brings unprecedented challenges, but also opportunities. In this paper, we use bibliometric and social

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

• at room temperature was shown by Chiang et al. [36]. It led to 99 atom % pure Cu films. H2/Ar microplasma-assisted FEBID increased the Cu content from 12 atom % to 41 atom % but also caused extended halo deposits [39]. Ga+ ion beam deposition showed that heating the substrate surface has a crucial

Influence of the shape and surface oxidation in the magnetization reversal of thin iron nanowires grown by focused electron beam induced deposition

• Luis A. Rodríguez,
• Lorenz Deen,
• Rosa Córdoba,
• César Magén,
• Etienne Snoeck,
• Bert Koopmans and
• José M. De Teresa

Beilstein J. Nanotechnol. 2015, 6, 1319–1331, doi:10.3762/bjnano.6.136

• with a width of 250 nm and nominal thicknesses of 10 and 45 nm were fabricated using a focused Ga+ ion beam and standard lift-out procedures in an FEI Helios 600 Nanolab. The slices were cut perpendicular to the nanowire length to analyze their cross-sectional width profile. The morphology and

Structural transitions in electron beam deposited Co–carbonyl suspended nanowires at high electrical current densities

• Gian Carlo Gazzadi and
• Stefano Frabboni

Beilstein J. Nanotechnol. 2015, 6, 1298–1305, doi:10.3762/bjnano.6.134

• Strata DB235M) combining a Ga-ion focused ion beam (FIB) with a thermal field emission SEM, equipped with a Co–carbonyl (Co2(CO)8) GIS operated at room temperature (RT). The GIS is mounted at a polar angle of 52° and an azimuthal angle of 115° with respect to the sample surface. An injection nozzle with

Nano-contact microscopy of supracrystals

• Adam Sweetman,
• Nicolas Goubet,
• Ioannis Lekkas,
• Marie Paule Pileni and
• Philip Moriarty

Beilstein J. Nanotechnol. 2015, 6, 1229–1236, doi:10.3762/bjnano.6.126

• through the ACRITAS Initial Training Network (grant PITN-GA-2012-317348). N.G. and M.P.P. thank the European Research Council for funding via Advanced Grant No. 267129.

Electrical properties of single CdTe nanowires

• Elena Matei,
• Camelia Florica,
• Andreea Costas,
• María Eugenia Toimil-Molares and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2015, 6, 444–450, doi:10.3762/bjnano.6.45

• determined by the Ga ion beam. The result is a stripe of a mixture of Pt–C–Ga with the desired geometry determined by the ion beam scanning pattern. A probe station was employed for performing the electrical characterization of individual nanowires. In order to investigate the effect of a gate on the

Synthesis of boron nitride nanotubes and their applications

• Saban Kalay,
• Zehra Yilmaz,
• Ozlem Sen,
• Melis Emanet,
• Emine Kazanc and
• Mustafa Çulha

Beilstein J. Nanotechnol. 2015, 6, 84–102, doi:10.3762/bjnano.6.9

• reduced proliferation at hours 48 and 72. Similar to the results reported by Ciofani et al., the GC–BNNTs were nontoxic at low concentrations [71]. The toxicity of glucosamine (GA)-, poly(ethylene glycol)1000 (PEG1000)- and chitosan (CH)-coated BNNTs using MRC-5 cells was studied [78]. The study found

• that the BNNT–CH and BNNT–PEG were nontoxic in the range from 0.1 to 50.0 µg/mL but they were significantly toxic at 100 µg/mL. It was concluded that the GA–BNNT, PEG–BNNT and CH–BNNT were nontoxic at low concentrations but further evaluation on more cell types was suggested for their reliable use in

• biomedical applications [78]. The GA–BNNTs were found to be nontoxic to MRC-5 cells, but the previous studies claimed that glucosamine prevented the cellular uptake of glucose by pancreatic beta cells and caused cell death [73]. Poly-L-lysine (PLL) is known for its cytocompatibility due to the presence of

Intake of silica nanoparticles by giant lipid vesicles: influence of particle size and thermodynamic membrane state

• Florian G. Strobl,
• Florian Seitz,
• Christoph Westerhausen,
• Armin Reller,
• Adriano A. Torrano,
• Christoph Bräuchle,
• Achim Wixforth and
• Matthias F. Schneider

Beilstein J. Nanotechnol. 2014, 5, 2468–2478, doi:10.3762/bjnano.5.256

• Equation 2 in [33]). Assuming a surface to surface distance of 0.5 nm ≤ d ≤ 1 nm, ga ≈ gdl ≈ −1 mJ/m2 can serve as an upper limit for the attractive adhesion energy. Rising membrane tension upon particle uptake Assuming a process as described in Figure 1, the uptake of one particle with radius r will

Si/Ge intermixing during Ge Stranski–Krastanov growth

• Alain Portavoce,
• Khalid Hoummada,
• Antoine Ronda,
• Dominique Mangelinck and
• Isabelle Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2374–2382, doi:10.3762/bjnano.5.246

• grown (see the sketch of the sample structure in Figure 2). The entire growth was performed without interruption. Sample preparation for APT was performed using a Helios NanoLab DualBeam Ga+ FIB from FEI. A 100 nm thick Ni film was deposited by magnetron sputtering on each sample for protection before

Anticancer efficacy of a supramolecular complex of a 2-diethylaminoethyl–dextran–MMA graft copolymer and paclitaxel used as an artificial enzyme

• Yasuhiko Onishi,
• Yuki Eshita,
• Rui-Cheng Ji,
• Masayasu Onishi,
• Takashi Kobayashi,
• Masaaki Mizuno,
• Jun Yoshida and
• Naoji Kubota

Beilstein J. Nanotechnol. 2014, 5, 2293–2307, doi:10.3762/bjnano.5.238

• effects of the active agent can change significantly. In a study about the treatment of A2780 human ovarian carcinoma cells with geldanamycin (GA), 17-(3-aminopropylamino)-17-demethoxygeldanamycin (AP-GA), and a N-(2-hydroxypropyl)methacrylamide copolymer/AP-GA conjugate (P[AP-GA]), their differential

• effects were revealed by gene expression array analysis [5]. Remarkably, AP-GA-treated cells exhibited an increased expression of HSP70 and HSP27 compared to cells treated with GA and P[AP-GA] [5]. It was proposed that the conjugation of AP-GA to the N-(2-hydroxypropyl)methacrylamide copolymer resulted in

• the modulation of the AP-GA-triggered stress responses in cells because of the differences in the internalization mechanism, subcellular localization, and concentration gradients in cells [5][6]. Above all, the DDS complex must be not degraded in cells and act as an intact object. Nishiyama et al. [7

Nanometer-resolved mechanical properties around GaN crystal surface steps

• Jörg Buchwald,
• Marina Sarmanova,
• Bernd Rauschenbach and
• Stefan G. Mayr

Beilstein J. Nanotechnol. 2014, 5, 2164–2170, doi:10.3762/bjnano.5.225

• Ga atoms. Local [001]-oriented indentation modulus for three different step heights along the y-axis. Measured by indenting a single atom (A1 = 0.088 nm2). The error bars denote the standard deviation of the displacement and apply to all data points. [001]-oriented indentation modulus for three