Electrical characterization of single nanometer-wide Si fins in dense arrays

• Steven Folkersma,
• Janusz Bogdanowicz,
• Andreas Schulze,
• Paola Favia,
• Dirch H. Petersen,
• Ole Hansen,
• Henrik H. Henrichsen,
• Peter F. Nielsen,
• Lior Shiv and
• Wilfried Vandervorst

Beilstein J. Nanotechnol. 2018, 9, 1863–1867, doi:10.3762/bjnano.9.178

• implantation and annealing treatment. This increase in sheet resistance when going to nanoscale elongated geometries was expected and understood to originate from the presence of interface states as well as defects at the fin sidewalls [6]. Conclusion This paper demonstrates the capability of μ4pp to

Friction force microscopy of tribochemistry and interfacial ageing for the SiO_x/Si/Au system

• Christiane Petzold,
• Marcus Koch and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2018, 9, 1647–1658, doi:10.3762/bjnano.9.157

• cantilevers before use. A Au(111) single crystal (MaTeck GmbH, Jülich, Germany) was prepared by repeating a sputter–heating cycle (20 min Ar sputtering at 25 μA/1 keV followed by 1 h annealing at 850 °C) until a sharp (111) pattern was observed by low-energy electron diffraction (LEED). The n-Si(100) sample

Light extraction efficiency enhancement of flip-chip blue light-emitting diodes by anodic aluminum oxide

• Yi-Ru Huang,
• Yao-Ching Chiu,
• Kuan-Chieh Huang,
• Shao-Ying Ting,
• Po-Jui Chiang,
• Chih-Ming Lai,
• Chun-Ping Jen,
• Snow H. Tseng and
• Hsiang-Chen Wang

Beilstein J. Nanotechnol. 2018, 9, 1602–1612, doi:10.3762/bjnano.9.152

• traditional LED by producing a TiO2 microstructure array on p-GaN through dipping and rapid convective deposition and using noncrystalline TiO2 and anatase TiO2 with a diameter of 520 nm [13]. Huang et al. used Zn and Mg for ion implantation at the GZO thin layer and then adopted rapid thermal annealing to

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• of thermal activation via, e.g., a high-temperature annealing process a significant fraction of potential dopants will remain on interstitial sites [3]. The decreasing number of Si–Si bonds per Si NC atom is a crucial point for the increase of dopant formation energies [4]. These factors impede

• broad overview of all available techniques and approaches [11]. Here, we focus on the Si NC growth via phase separation of PECVD-deposited, P- or B-doped silicon-rich oxide thin films via annealing at high temperatures. Additionally, we focus on comparatively lowly doped samples (on the order of 0.1–1

• incorporation efficiency of B in Si-rich oxides is approximately one order of magnitude lower than that of P. Since SIMS cannot reveal the distribution of the dopants in the heterogeneous sample system of Si NCs and SiO2 after annealing, atom probe tomography (APT) is used. APT was demonstrated to be a powerful

Nanoporous silicon nitride-based membranes of controlled pore size, shape and areal density: Fabrication as well as electrophoretic and molecular filtering characterization

• Axel Seidenstücker,
• Stefan Beirle,
• Fabian Enderle,
• Paul Ziemann,
• Othmar Marti and
• Alfred Plettl

Beilstein J. Nanotechnol. 2018, 9, 1390–1398, doi:10.3762/bjnano.9.131

• silicon dioxide layers during rapid thermal annealing [13]. This fabrication offers the advantage of full compatibility to semiconductor fabrication techniques. While pore distance and pore size can be controlled within acceptable limits, the generated pores are random in position and the membrane

• of the micelle-grown Au NPs [35][40]. Up to a diameter of about 30 nm this process can be done in a single step. The spherical shape can be improved by additional annealing [35]. These Au NPs are then applied as an etching mask in a RIE process that was optimized to remove Si and Si compounds (oxide

• of the resulting membranes, may deteriorate their permeability. It turned out, however, that fluorocarbon surface contaminations could be removed by annealing in ultra-high vacuum (10−8 mbar) at 500 °C for 120 min (details are given in Supporting Information File 1). For membrane C with the smallest

Heterostuctures of 4-(chloromethyl)phenyltrichlorosilane and 5,10,15,20-tetra(4-pyridyl)-21H,23H-porphine prepared on Si(111) using particle lithography: Nanoscale characterization of the main steps of nanopatterning

• Phillip C. Chambers and
• Jayne C. Garno

Beilstein J. Nanotechnol. 2018, 9, 1211–1219, doi:10.3762/bjnano.9.112

• drying, 10 µL of monodisperse silica microspheres in water was deposited on the clean silicon substrates and dried in air to produce a surface film of Si spheres. The substrate and dried microspheres were placed in an oven at 150 °C for 20 h. The annealing heating step was used to temporarily solder the

P3HT:PCBM blend films phase diagram on the base of variable-temperature spectroscopic ellipsometry

• Barbara Hajduk,
• Henryk Bednarski,
• Bożena Jarząbek,
• Henryk Janeczek and
• Paweł Nitschke

Beilstein J. Nanotechnol. 2018, 9, 1108–1115, doi:10.3762/bjnano.9.102

• post-deposition treatments, e.g., heat treatment [20][21]. One large branch of studies on OPV devices based on thin films of polymer:fullerene blend active layers deals with the optimization of their power conversion efficiency by applying thermal annealing [8]. Remarkably, it has been proven that the

• . They also related the value of the optimum annealing temperature for a given sample to their content of PCBM. What is important, these results were confirmed using two different experimental methods that allow for the determination of Tg. Namely, dynamic mechanical thermal analysis (DMTA) and

Room-temperature single-photon emitters in titanium dioxide optical defects

• Kelvin Chung,
• Yu H. Leung,
• Chap H. To,
• Aleksandra B. Djurišić and
• Snjezana Tomljenovic-Hanic

Beilstein J. Nanotechnol. 2018, 9, 1085–1094, doi:10.3762/bjnano.9.100

• treatment is also required. To the best of our knowledge, we can only conclude that we did not observe single-photon emission in some morphologies probably due to different fabrication methods and annealing temperatures. It can be inferred that for these two morphologies there is a pure non-radiative decay

• mechanism. This topic is beyond the scope of the current work, which focusses on the optical regime and single-photon emission. Morfa et al. [7] observed a dependence of the creation of defects in ZnO nanoparticles on the annealing temperature. Single-photon emission in TiO2 thin films The a-450 °C-TiO2

• single-photon emitting defects represent 5% of the total number of fluorescing features investigated. A previous work by Morfa et al. [7] on single-photon emitting defects in ZnO films showed that the annealing temperature plays an important role in the creation of defects. In our work, the films that

Single-crystalline FeCo nanoparticle-filled carbon nanotubes: synthesis, structural characterization and magnetic properties

• Rasha Ghunaim,
• Maik Scholz,
• Christine Damm,
• Bernd Rellinghaus,
• Rüdiger Klingeler,
• Bernd Büchner,
• Michael Mertig and
• Silke Hampel

Beilstein J. Nanotechnol. 2018, 9, 1024–1034, doi:10.3762/bjnano.9.95

• of the filling inside the CNTs and was confirmed by quantitative measurements performed by TGA as will be shown later (see Figure 6). It is important to emphasize the effect of annealing on the growth of the particles. For the as-prepared samples (i.e., only reduced, Figure 1a and 1b), different

• morphologies and particle sizes for the filling materials have been observed (small, large spheres, particle chains as indicated by arrows in Figure 1b), whereas after an additional heat treatment step (annealing at 600 °C for 48 h), a significant growth in the particles size was observed. This observation was

• treatment step. We attribute the observation of a pronounced increase in particle size to the prolonged heat treatment (i.e., annealing for 48 h), which provides a significantly higher amount of thermal energy. This increases the probability of particle merging, which in turn leads to particle growth. TEM

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• attention to the interface with the substrate. The annealing treatments have been performed in situ during the acquisition of X-Ray diffraction patterns to monitor the structural changes in the film. We find that ceria film is thermally stable up to annealing temperatures of 900 °C required for the complete

• structure with texturing. Further, after annealing at 900 °C an increase of grain dimensions and an enhanced preferential (200) orientation are evidenced. These findings are a strong indication that the texturing is an intrinsic property of the system more than a metastable condition due to the ALD

• ; in situ annealing; transmission electron microscopy; X-ray diffraction; Introduction Cerium dioxide (CeO2) has raised renewed interest in the recent years in many fields of research thanks to its properties, such as the ability to store and release oxygen, or its chemical stability [1][2]. For many

Comparative study of antibacterial properties of polystyrene films with TiO_x and Cu nanoparticles fabricated using cluster beam technique

• Vladimir N. Popok,
• Cesarino M. Jeppesen,
• Peter Fojan,
• Anna Kuzminova,
• Jan Hanuš and
• Ondřej Kylián

Beilstein J. Nanotechnol. 2018, 9, 861–869, doi:10.3762/bjnano.9.80

• formation of the particles with semiconducting properties required for the catalytic formation of reactive oxygen species. Cu NPs are used as deposited. Partial NP embedding into polystyrene is realised in a controllable manner using thermal annealing in order to improve surface adhesion and make the

• formed in a cluster source into polymer simultaneously synthesized by plasma-enhanced chemical vapour deposition, by coating the NPs with a thin overlay or by soft landing of clusters on ex situ fabricated films followed by thermal annealing facilitating the partial embedding of clusters into the polymer

• the Cu clusters are size-selected prior the deposition (see Experimental section). The annealing leads to the immersion of NPs into PS by about 30–50% of their diameter as can be seen in Figure 1b while comparing the height scales in panels (a) and (b). These images are given just for the illustration

Facile synthesis of a ZnO–BiOI p–n nano-heterojunction with excellent visible-light photocatalytic activity

• Mengyuan Zhang,
• Jiaqian Qin,
• Pengfei Yu,
• Bing Zhang,
• Mingzhen Ma,
• Xinyu Zhang and
• Riping Liu

Beilstein J. Nanotechnol. 2018, 9, 789–800, doi:10.3762/bjnano.9.72

• the previous studies without post-annealing treatment [33]. It is reasonable to believe that the bonding between ZnO and BiOI is stronger after the calcination and can be beneficial to the charge transfer in the photocatalytic activity process. Figure 2a–c shows the morphology of samples B-1, B-4 and

Dynamics and fragmentation mechanism of (C₅H₄CH₃)Pt(CH₃)₃ on SiO₂ surfaces

• Kaliappan Muthukumar,
• Harald O. Jeschke and
• Roser Valentí

Beilstein J. Nanotechnol. 2018, 9, 711–720, doi:10.3762/bjnano.9.66

• (such as annealing, post-deposition annealing in O2, exposure to atomic hydrogen, post-deposition electron irradiation) were proposed as viable techniques [7][8], but these approaches are not completely free from reproducibility issues. Therefore, to improve the metal content and to address the nature

Combined pulsed laser deposition and non-contact atomic force microscopy system for studies of insulator metal oxide thin films

• Daiki Katsube,
• Hayato Yamashita,
• Satoshi Abo and
• Masayuki Abe

Beilstein J. Nanotechnol. 2018, 9, 686–692, doi:10.3762/bjnano.9.63

• a combined system of pulsed laser deposition (PLD) and non-contact atomic force microscopy (NC-AFM) for observations of insulator metal oxide surfaces. With this system, the long-period iterations of sputtering and annealing used in conventional methods for preparing a metal oxide film surface are

• ][22]. For observations of surface atoms of metal oxides using NC-AFM and STM, it is critical to prepare atomically flat and clean surfaces. A standard method for obtaining clean surfaces of metal oxides is performing iterations of Ar+ sputtering and annealing at high temperatures [23][24][25][26][37

• ][41][42]. Different conditions of annealing and sputtering result in different types of surface reconstruction even under the same preparation conditions [26]. As an example of an insulator metal oxide, an Al2O3(0001) surface prepared using iterations of annealing and sputtering was imaged with atomic

Optimisation of purification techniques for the preparation of large-volume aqueous solar nanoparticle inks for organic photovoltaics

• Furqan Almyahi,
• Thomas R. Andersen,
• Nathan A. Cooling,
• Natalie P. Holmes,
• Matthew J. Griffith,
• Krishna Feron,
• Xiaojing Zhou,
• Warwick J. Belcher and
• Paul C. Dastoor

Beilstein J. Nanotechnol. 2018, 9, 649–659, doi:10.3762/bjnano.9.60

• integrating sphere. Device testing The NP-OPV devices had a masked area of 3.8 mm2 and were tested under a nitrogen atmosphere in glovebox before and after annealing at 140 °C for 4 min. Current density–voltage (J–V) measurements were performed using Keithley 2400 source meter under illumination of a Newport

Sensing behavior of flower-shaped MoS₂ nanoflakes: case study with methanol and xylene

• Maryam Barzegar,
• Masoud Berahman and
• Azam Iraji zad

Beilstein J. Nanotechnol. 2018, 9, 608–615, doi:10.3762/bjnano.9.57

• nanoflakes. It was found that the nanoflakes form a flower-shaped structure with a large surface-to-volume ratio. The sensor device was successfully fabricated by spin coating of MoS2 flakes on an alumina substrate, on the back side of which a Pt heater circuit for thermal annealing was deposited. Our

Electron interactions with the heteronuclear carbonyl precursor H₂FeRu₃(CO)₁₃ and comparison with HFeCo₃(CO)₁₂: from fundamental gas phase and surface science studies to focused electron beam induced deposition

• Ragesh Kumar T P,
• Paul Weirich,
• Lukas Hrachowina,
• Marc Hanefeld,
• Ragnar Bjornsson,
• Helgi Rafn Hrodmarsson,
• Sven Barth,
• D. Howard Fairbrother,
• Michael Huth and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2018, 9, 555–579, doi:10.3762/bjnano.9.53

• are largely unaffected by either further electron irradiation or annealing to room temperature, with a predicted metal content similar to what is observed in FEBID. Furthermore, gas phase experiments indicate formation of Fe(CO)4 from H2FeRu3(CO)13 upon low energy electron interaction. This fragment

• such as Pt and Au by post-growth treatment and in situ injection of water for carbon removal [6][7][8][9][10][11][12][13]. These oxidative processes are suitable for precious metals, while other approaches such as annealing under vacuum [14] and hydrogen atmosphere [15][16] are suitable for metals such

• regions for this electron dose (1.3 × 1017 e−/cm2) are seen to be similar to those shown in Figure 9, with the dominant effects being the loss of signal intensity in the O 1s region (≈70% of its initial value) and a decrease of ≈1.6 eV in the binding energy of the Ru atoms. Upon annealing this irradiated

Photocatalytic and adsorption properties of TiO₂-pillared montmorillonite obtained by hydrothermally activated intercalation of titanium polyhydroxo complexes

• Mikhail F. Butman,
• Nikolay L. Ovchinnikov,
• Nikita S. Karasev,
• Nataliya E. Kochkina,
• Alexander V. Agafonov and
• Alexandr V. Vinogradov

Beilstein J. Nanotechnol. 2018, 9, 364–378, doi:10.3762/bjnano.9.36

• close to the sol formation limit. The materials, produced at various annealing temperatures from the intercalated samples, were characterized by infrared spectroscopy, differential scanning calorimetry (DSC)/thermogravimetric analysis (TGA), X-ray diffraction, dynamic light scattering (DLS) measurements

• ] describes a low-temperature method for pillaring MM using a TiO2 sol produced by hydrolyzing TiCl4 in strongly acidic medium and subsequent drying at 30–80 °C. Chen et al. [12] shows the results of pillaring MM using titanium tetra-N-butoxide hydrolyzed in HCl solution and subsequent annealing at a

• space of montmorillonite prior the stage of heat treatment, and significantly improves the transformation of these particles into well-crystallized TiO2 pillars after further annealing. To the best of our knowledge, the literature data contain no information on hydrothermal synthesis of the pillared MM

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• ] top-down NEM switch fabrication approaches. Similarly to copper, the fabrication of a platinum cantilever NEM switching element involved an additional thermal annealing step at 300 °C to reduce the stress gradient in the beam. The usability of platinum for electron-beam lithography-based fabrication

• residual stress within the thin film layers which has to be taken into account for NEM switch applications as it can cause unwanted out-of-plane deformations of switching elements [6][142]. Therefore, specific treatments for switching elements such as high-temperature annealing is necessary to release the

Synthesis and characterization of electrospun molybdenum dioxide–carbon nanofibers as sulfur matrix additives for rechargeable lithium–sulfur battery applications

• Ruiyuan Zhuang,
• Shanshan Yao,
• Maoxiang Jing,
• Xiangqian Shen,
• Jun Xiang,
• Tianbao Li,
• Kesong Xiao and
• Shibiao Qin

Beilstein J. Nanotechnol. 2018, 9, 262–270, doi:10.3762/bjnano.9.28

• present work, a facile route based on a single-spinneret electrospinning technique with a subsequent annealing process was developed to prepare MoO2–CNFs. The effect of MoO2–CNF heat treatment on the cycle performance of sulfur/MoO2–CNFs electrodes was examined. The data showed that MoO2–CNFs calcined at

• 500–850 cm−1 were attributed to Mo–O–Mo, indicating the occurrence of crystallization [28]. Both the Raman spectra and XRD results suggested that MoO2–CNFs were formed through a subsequent annealing process. The broad band at 3400 cm−1 was attributed to the O–H stretching vibration due to absorbed H2O

BN/Ag hybrid nanomaterials with petal-like surfaces as catalysts and antibacterial agents

• Konstantin L. Firestein,
• Denis V. Leybo,
• Alexander E. Steinman,
• Andrey M. Kovalskii,
• Andrei T. Matveev,
• Anton M. Manakhov,
• Irina V. Sukhorukova,
• Pavel V. Slukin,
• Nadezda K. Fursova,
• Sergey G. Ignatov,
• Dmitri V. Golberg and
• Dmitry V. Shtansky

Beilstein J. Nanotechnol. 2018, 9, 250–261, doi:10.3762/bjnano.9.27

• the CVD method. The best catalytic characteristics (100% methanol conversion at 350 °C) were achieved using the UV BN/Ag HNMs without preliminary annealing at 600 °C in an oxidizing atmosphere. Both types of the BN/Ag HNMs possess a profound antibacterial effect against Escherichia coli K-261 bacteria

• gave the following Ag contents: CVD BN/Ag HNMs – 1.5 wt %, UV BN/Ag HNMs – 2.4 wt %. To shed a light on surface chemistry of BN/Ag HNMs and to also understand how it changes during heating in the oxidizing atmosphere, we have performed XPS analysis of UV BN/Ag HNMs before and after annealing in air at

• elevated temperatures, are required. To completely exclude the possible influence of an oxidation process on the phase composition and to directly observe the structural evolutions upon heating, the annealing tests were first conducted directly in the TEM column. Figure 4a and 4b represent TEM micrographs

Anchoring of a dye precursor on NiO(001) studied by non-contact atomic force microscopy

• Sara Freund,
• Antoine Hinaut,
• Nathalie Marinakis,
• Edwin C. Constable,
• Ernst Meyer,
• Catherine E. Housecroft and
• Thilo Glatzel

Beilstein J. Nanotechnol. 2018, 9, 242–249, doi:10.3762/bjnano.9.26

• room temperature. Figure 3a presents a large-scale topographic image of the surface after a low-coverage deposition process (0.2 monolayers) without any post-annealing treatment. The sample exhibits large NiO(001) terraces separated by monoatomic steps and covered with DCPDMbpy molecules. The different

• , no enhanced diffusion or island formation of the organic ligand at this low surface coverage and under these annealing conditions was observed (see Figure S1 in Supporting Information File 1). Also annealing at higher temperatures did not increase the mobility of the molecules, but rather led to

• and C are in α-conformation whereas molecule D is the β-form of DCPDMbpy. The ratio α/β varies from one cluster to the other, suggesting that there is no preferred conformation. With an increased coverage (0.7 monolayers) followed by a post-annealing process (1 h at 150 °C) molecular islands were

Gas-assisted silver deposition with a focused electron beam

• Luisa Berger,
• Katarzyna Madajska,
• Iwona B. Szymanska,
• Katja Höflich,
• Mikhail N. Polyakov,
• Jakub Jurczyk,
• Carlos Guerra-Nuñez and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 224–232, doi:10.3762/bjnano.9.24

• arises from the surface enhanced Raman from the silver crystals as previously reported by various groups [13][24]. We assume that the line conductivity could be further improved by purification of the deposit, thus reducing the amount of carbon. Alternatively, annealing could coalesce the individual

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer

• Discussion Growth technique In our experiments, we used p-type Si(111) substrates that were treated with the Shiraki cleaning procedure prior to loading into the MBE chamber, where each substrate was annealed in ultrahigh vacuum. The annealing temperature varied from sample to sample in the range of 850 to

• /h on a substrate that underwent low-temperature (850 °C) annealing. It should be mentioned that in this case a silicon oxide layer covering the substrate was removed only partially or was not removed at all. This conclusion is based on the analysis of in situ reflection high-energy electron

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

• Kristjan Kalam,
• Helina Seemen,
• Peeter Ritslaid,
• Mihkel Rähn,
• Aile Tamm,
• Kaupo Kukli,
• Aarne Kasikov,
• Joosep Link,
• Raivo Stern,
• Salvador Dueñas,
• Helena Castán and
• Héctor García

Beilstein J. Nanotechnol. 2018, 9, 119–128, doi:10.3762/bjnano.9.14

• grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO2 were stabilized by Fe2O3 doping. The number of alternating ZrO2 and Fe2O3 deposition cycles were varied in order to achieve films with different cation ratios. The influence of annealing on the composition and structure of the

• properties were characterized [5]. Upon annealing at 500 °C, the metastable cubic phase of ZrO2 was stabilized and ferromagnetic hysteresis of the nanocomposite film was confirmed. Saturation magnetization was measured to be ≈173 emu/g [5]. Undoped ZrO2, prepared by pulsed electron beam deposition [6] or

• and tetrakis(dimethylamido)zirconium(IV)/water for Fe2O3 and ZrO2, respectively, and Fe2O3 was reduced to Fe3O4 after the growth. In another study [19], ZrO2/Fe thin films were prepared by ALD from β-diketonate precursors and ozone. After annealing at 600 °C in N2 flux for 60 s, the films exhibited