Adsorption and self-assembly of porphyrins on ultrathin CoO films on Ir(100)

• Feifei Xiang,
• Tobias Schmitt,
• Marco Raschmann and
• M. Alexander Schneider

Beilstein J. Nanotechnol. 2020, 11, 1516–1524, doi:10.3762/bjnano.11.134

• superstructure with respect to the quasi-hexagonal structure of the CoO 2BL film (red rectangle in Figure 6b). Arranging 2 in its gas phase configuration within this cell, we find that the CN groups of the dipolar bond have a distance of 0.4 nm and that the hydrogen bond has a length of 0.3 nm between the N atom

Helium ion microscope – secondary ion mass spectrometry for geological materials

• Matthew R. Ball,
• Richard J. M. Taylor,
• Joshua F. Einsle,
• Fouzia Khanom,
• Christelle Guillermier and
• Richard J. Harrison

Beilstein J. Nanotechnol. 2020, 11, 1504–1515, doi:10.3762/bjnano.11.133

• focussed ion beam (FIB) instrument, which uses a gas field ion source (GFIS) to create highly focussed beams of noble gas ions, utilising the same working principle as the field ion microscope (FIM). This was originally used to form a primary helium beam [1], but the principle of the GFIS has since been

• extended to the heavier noble gas neon [2] and may be applicable for even heavier noble gases such as argon. Whilst the HIM was shown to achieve exceptional imaging resolution using secondary electrons generated by the primary ion beam [3][4][5][6], it lacked microanalytical capabilities. There were

• –SIMS for geological materials are also provided. Results and Discussion Methods All analyses were performed using an ORION NanoFab HIM with an attached V500 double focussing magnetic sector mass spectrometer [14]. The gas field ion source (GFIS) of the ORION instrument produces a highly focussed single

Controlling the electronic and physical coupling on dielectric thin films

• Philipp Hurdax,
• Michael Hollerer,
• Larissa Egger,
• Georg Koller,
• Xiaosheng Yang,
• Anja Haags,
• Serguei Soubatch,
• Frank Stefan Tautz,
• Mathias Richter,
• Alexander Gottwald,
• Peter Puschnig,
• Martin Sterrer and
• Michael G. Ramsey

Beilstein J. Nanotechnol. 2020, 11, 1492–1503, doi:10.3762/bjnano.11.132

• to 5A, 6P is geometrically more flexible, more specifically, it is nonplanar in the gas phase and has a relatively low electron affinity. On the pristine Ag(100) substrate, 6P simply physisorbs with no evidence of LUMO hybridization, which remains unoccupied [21]. It will be shown that the

• . In the gas phase, 6P naturally occurs with a torsional angle of 35° between its phenyl rings [26]. The observation of such a twist on MgO(100)/Ag(100) suggests that the interaction between the 6P molecules and MgO is very weak. In addition, next to the 6P molecules with a zig-zag appearance, there

• overlap between the phenyl rings. This will cause an increase in the energy spread of the π bands, resulting in a decrease in the ionization potential and an increase in the electron affinity. Gas phase DFT calculations show that the EA of planar 6P (1.74 eV) is indeed 0.3 eV higher than the EA of twisted

Self-assembly and spectroscopic fingerprints of photoactive pyrenyl tectons on hBN/Cu(111)

• Domenik M. Zimmermann,
• Knud Seufert,
• Luka Ðorđević,
• Tobias Hoh,
• Sushobhan Joshi,
• Tomas Marangoni,
• Davide Bonifazi and
• Willi Auwärter

Beilstein J. Nanotechnol. 2020, 11, 1470–1483, doi:10.3762/bjnano.11.130

• at the submolecular level via STM and STS, e.g., reveal to be close to the gas-phase-like frontier orbitals. The electronic landscape of the hBN/Cu(111) template induces a periodic modulation of the electronic structure of the pyrene films at the single digit nanometer scale. The on-surface STM/STS

• , elongated protrusion, four additional lobes contributed to the X-shaped appearance of the molecular units of 1. Each of these peripheral protrusions was attributed to one pyridin-4-ylethynyl substituent. Atomistic models (see overlays in Figure 2b), reflecting the gas-phase optimized molecular structure

• . Furthermore, the agreement between the gas-phase calculations and STM data indicated that no charging occurred upon pyrene adsorption on hBN/Cu(111) [37]. To complement the on-surface investigations, we measured the optical gap by means of UV–vis spectroscopic characterization in solution (toluene) of the

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• range of 10–240 mmol/L. This is within the pore formation regime according to Chartier et al. [13]. During the process, a gas formation could be observed for all samples. This phenomenon occurred solely at the uncovered areas. According to the reported etching mechanism, this outgassing is a result of

• purge of the reactor with inert gas for 60 s. The removal of the ligands is ensured by an O2 pulse for 2 s followed by a purge for 6 s. Finally, the wafers (and Ir containing samples) have been wet-etched. This etching has been done in a single wafer bath with a total liquid volume of 800 mL. The

Protruding hydrogen atoms as markers for the molecular orientation of a metallocene

• Linda Laflör,
• Michael Reichling and
• Philipp Rahe

Beilstein J. Nanotechnol. 2020, 11, 1432–1438, doi:10.3762/bjnano.11.127

• ferrocene, the rotational barrier between these conformers amounts to only 0.04 eV in the gas phase [11][12][13], while for substituted ferrocenes the energy barrier values determined in the gas phase amount up to 0.2 eV [14][15][16]. In solution, barrier values of up to 0.7 eV are measured [17][18] and for

One-step synthesis of carbon-supported electrocatalysts

• Sebastian Tigges,
• Nicolas Wöhrl,
• Ivan Radev,
• Ulrich Hagemann,
• Markus Heidelmann,
• Thai Binh Nguyen,
• Stanislav Gorelkov,
• Stephan Schulz and
• Axel Lorke

Beilstein J. Nanotechnol. 2020, 11, 1419–1431, doi:10.3762/bjnano.11.126

• illustrated in Figure 1. For details on the experimental procedures, see the Experimental section. A typical CNW sheet of a sample processed at 8 Pa chamber pressure, 60 sccm argon carrier gas flow rate, and 350 °C substrate temperature is shown in a bright-field transmission electron microscope (TEM

• properties of the support Figure 4 shows the influence of the carrier gas flow rate (a), pressure (b), and substrate temperature (c) on the CNW morphology. The wall density, as well as the growth rate, was found to increase with increasing gas flow rate, decreasing pressure and increasing substrate

• temperature, which agrees with a previous study [17]. Figure 4d shows the influence of H2 content in the carrier gas on the CNW morphology. Increasing the H2 supply results in an increase of atomic H in the plasma and a decrease of the O content, whereas the CH and C2 signals remain stable, as was confirmed

Superconductor–insulator transition in capacitively coupled superconducting nanowires

• Alex Latyshev,
• Andrew G. Semenov and
• Andrei D. Zaikin

Beilstein J. Nanotechnol. 2020, 11, 1402–1408, doi:10.3762/bjnano.11.124

• on these two QPTs. For this purpose let us express the grand partition function of our system in terms of the path integral where is the effective action corresponding to the Hamiltonian (Equation 8) and denotes the effective fugacity for the gas of quantum phase slips in the ith wire. Note that

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• ripening requires the existence of a medium where the material can be transported. Since there is no wetting layer (according to the WA and EA models, Figure 1), the Laplace pressure cannot be relieved by Ostwald ripening. Nevertheless, an Ostwald ripening process could also take place through the gas

Impact of fluorination on interface energetics and growth of pentacene on Ag(111)

• Qi Wang,
• Meng-Ting Chen,
• Antoni Franco-Cañellas,
• Bin Shen,
• Thomas Geiger,
• Holger F. Bettinger,
• Frank Schreiber,
• Ingo Salzmann,
• Alexander Gerlach and
• Steffen Duhm

Beilstein J. Nanotechnol. 2020, 11, 1361–1370, doi:10.3762/bjnano.11.120

• ][30][31][32][33][34][35]. PEN and PFP have almost identical optical gaps in thin films (1.85 eV and 1.75 eV, respectively) [36][37], and the experimental gas phase IEs (measured by UPS) are 6.59 eV [38] and 7.50 eV [39], respectively. This trend of the IEs is also found for thin films comprised of PEN

• signs for PEN and PFP [11]. Electrostatic potential maps of PEN, F4PEN and PFP in the gas phase can be found in [46]. In general, hydrogen atoms bear a minimum, and fluorine atoms a maximum of the electron density, i.e., the quadrupole moments of F4PEN along the molecular short and long axes have

Atomic defect classification of the H–Si(100) surface through multi-mode scanning probe microscopy

• Jeremiah Croshaw,
• Thomas Dienel,
• Taleana Huff and
• Robert Wolkow

Beilstein J. Nanotechnol. 2020, 11, 1346–1360, doi:10.3762/bjnano.11.119

• (100). Samples were degassed at 600 °C overnight followed by multiple cycles of flash annealing at 1250 °C. The samples were then terminated with hydrogen by exposing them to molecular hydrogen (10−6 Torr) while the Si sample was held at 330 °C for 2 min. The molecular hydrogen was cracked from H2 gas

Controlling the proximity effect in a Co/Nb multilayer: the properties of electronic transport

• Sergey Bakurskiy,
• Mikhail Kupriyanov,
• Nikolay V. Klenov,
• Igor Soloviev,
• Andrey Schegolev,
• Roman Morari,
• Yury Khaydukov and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2020, 11, 1336–1345, doi:10.3762/bjnano.11.118

• system with an insert for the flowing gas. Figure 4 represents the principle scheme of the measurements performed in this work. This “centipede-like” sample design facilitates the measurements of the electrical resistance values in different synapse-like segments simply by alternating the arms. Before

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• is particularly crucial for device applications in radiation-rich environments (e.g., space satellite technologies), since defects can be introduced by ionizing particle irradiation while the devices are in continuous operation. Recently, noble gas ion beam irradiation has opened the field to the

• ). Prior to testing, the devices were outgassed at a pressure of approx. 10−5 mbar for 12 h to minimize surface adsorbates. Helium ion irradiations were carried out at a beam energy of 30 keV and He gas pressure of 2 × 10−6 Torr, using a Zeiss Nanofab microscope. The fabricated MoS2 FETs were placed in the

Structural and electronic properties of SnO₂ doped with non-metal elements

• Jianyuan Yu,
• Yingeng Wang,
• Yan Huang,
• Xiuwen Wang,
• Jing Guo,
• Jingkai Yang and
• Hongli Zhao

Beilstein J. Nanotechnol. 2020, 11, 1321–1328, doi:10.3762/bjnano.11.116

• research works has been done examining different doping elements. Doped tin oxide thin film have been widely used in the fields of thin film solar cell electrodes, electronic display devices, and gas sensors. Also doped SnO2 been used for energy-saving low-emissivity glass coatings due to low resistivity

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

• Santiago H. Andany,
• Gregor Hlawacek,
• Stefan Hummel,
• Charlène Brillard,
• Mustafa Kangül and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2020, 11, 1272–1279, doi:10.3762/bjnano.11.111

• SEM in terms of lateral resolution, depth of field, surface sensitivity, and ability to image electrically insulating samples [13]. Furthermore, nanoscale structuration with noble gas ions can yield sub-10 nm structures without unwanted metal ion implantation, a sizeable advantage over traditional

• resist [31]. Chain scission leads to volume loss through the release of gas molecules, and this leads to the shrinkage of exposed PMMA [32], which can be easily quantified using AFM. In a second experiment, we tested the effect on a PMMA thin film exposed to different doses under the focused He ion beam

Role of redox-active axial ligands of metal porphyrins adsorbed at solid–liquid interfaces in a liquid-STM setup

• Thomas Habets,
• Sylvia Speller and
• Johannes A. A. W. Elemans

Beilstein J. Nanotechnol. 2020, 11, 1264–1271, doi:10.3762/bjnano.11.110

• ) substrate and an n-tetradecane solution of the compound [7]. From real-time topographic signature changes in the STM images (Figure 1c), combined with optical reflectance spectroscopy, it was concluded that Mn=O complexes were readily formed in the presence of O2 gas. This was a surprising result, since a

• solvated by the 1-phenyloctane solvent and migrate to the other electrode (vide infra). Second, in a counter reaction they are oxidized to chlorine gas. No net current would be observed if one of the two processes would not occur. In order to check the proposed role of the chloride ions, an analogous

• the two electrodes (surface and tip), in which chloride axial ligands dissociate upon reduction of the manganese centers at one electrode, after which the chloride ions are oxidized to chlorine gas at the other electrode. These reactions are supported by several observations: (i) The observed

Gas sorption porosimetry for the evaluation of hard carbons as anodes for Li- and Na-ion batteries

• Yuko Matsukawa,
• Fabian Linsenmann,
• Maximilian A. Plass,
• George Hasegawa,
• Katsuro Hayashi and
• Tim-Patrick Fellinger

Beilstein J. Nanotechnol. 2020, 11, 1217–1229, doi:10.3762/bjnano.11.106

• pores is nontrivial, we herein employ Kr, N2 and CO2 gas sorption porosimetry, as well as H2O vapor sorption porosimetry, to investigate eight hard carbons. Electrochemical lithium as well as sodium storage tests are compared to the obtained apparent surface areas and pore volumes. H2O, and more

• descriptors to the obtained capacities remains a scientific challenge. Keywords: alkaline-ion secondary battery; gas sorption porosimetry; hard carbon; irreversible capacity; ultramicroporosity; Introduction Lithium-ion battery (LIB)-based energy storage devices have been gaining high interest in the recent

• ]. These unwanted side reactions are expected to reduce the reversible capacity that can be obtained by adsorption within the pore system. In this work, we use different gas sorption porosimetry (GSP) techniques to investigate surface areas and porosities, contributed by pores of different size, of

3D superconducting hollow nanowires with tailored diameters grown by focused He⁺ beam direct writing

• Rosa Córdoba,
• Alfonso Ibarra,
• Dominique Mailly,
• Isabel Guillamón,
• Hermann Suderow and
• José María De Teresa

Beilstein J. Nanotechnol. 2020, 11, 1198–1206, doi:10.3762/bjnano.11.104

• . Helium ion microscopy in combination with a precursor gas can be used for direct writing of three-dimensional nanostructures with a precise control of their geometry, and a significantly higher aspect ratio than other additive manufacturing technologies. We report here on the deposition of 3D hollow

• relatively large Ga+ beam diameter (approx. 5 nm) and a high proximity effect generated by Ga+ ion scattering. Regarding a higher spatial resolution, the helium ion microscope (HIM) [27], based on a gas field-ionization source, has emerged as a tool for direct writing of complex 3D nano-objects taking

• advantage of its small beam diameter (approx. 0.3 nm) and low proximity effect [28]. When precursor molecules from the gas phase are adsorbed on a substrate surface, He+ FIB dissociates them into non-volatile and volatile products. The non-volatile products attach to the surface, resulting in a deposit

Hybridization vs decoupling: influence of an h-BN interlayer on the physical properties of a lander-type molecule on Ni(111)

• Maximilian Schaal,
• Takumi Aihara,
• Marco Gruenewald,
• Felix Otto,
• Jari Domke,
• Roman Forker,
• Hiroyuki Yoshida and
• Torsten Fritz

Beilstein J. Nanotechnol. 2020, 11, 1168–1177, doi:10.3762/bjnano.11.101

• , the LEED measurement of DBP on h-BN/Ni(111) deposited at a substrate temperature of 25 °C shows a ring-like diffraction pattern (see Supporting Information File 1, Figure S3) which can be explained by randomly oriented molecular domains or by a lattice gas or liquid-like phase [31]. A change of the

Scanning tunneling microscopy and spectroscopy of rubrene on clean and graphene-covered metal surfaces

• Karl Rothe,
• Alexander Mehler,
• Nicolas Néel and
• Jörg Kröger

Beilstein J. Nanotechnol. 2020, 11, 1157–1167, doi:10.3762/bjnano.11.100

• surfaces was motivated as follows. C42H28 is a polycyclic aromatic hydrocarbon (Figure 1a) with an extended system of delocalized π electrons. In the gas phase, intramolecular steric hindrance [11][12] causes the phenyl groups to rotate around their σ bonds, out of the tetracene backbone plane (Figure 1b

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• electronic functionality of such nanometer-scale building blocks. A rational and well-established synthesis strategy for the creation of complex silicon nanostructures is metal-catalyzed vapor–liquid–solid (VLS) nanowire growth [13]. VLS nanowire growth belongs to the gas-phase synthesis procedures, similar

• to chemical vapor deposition (CVD), and enables direct nanowire growth in a bottom-up manner. The nanowire composition, in particular the doping concentration, can be controlled by an adequate adjustment of the synthesis gas mixture, e.g., by setting the SiH4/B2H6 ratio during the synthesis of boron

• growth temperature of 720 °C, which yields a certain SiNW diameter distribution. VLS nanowire growth is carried out in a quartz tube furnace with a precursor gas mixture of H2 (270 sccm) and SiH4 (30 sccm), at a pressure of 100 mbar. Silicon shells are grown at a temperature of 520 °C with a gas mixture

Monolayers of MoS₂ on Ag(111) as decoupling layers for organic molecules: resolution of electronic and vibronic states of TCNQ

• Asieh Yousofnejad,
• Gaël Reecht,
• Nils Krane,
• Christian Lotze and
• Katharina J. Franke

Beilstein J. Nanotechnol. 2020, 11, 1062–1071, doi:10.3762/bjnano.11.91

• vibronic states of the gas-phase molecule. Results and Discussion We have grown monolayer islands of MoS2 on an atomically clean Ag(111) surface, which had been exposed to sputtering–annealing cycles under ultrahigh vacuum before. The growth procedure was adapted from that of MoS2 on Au(111) [34][35], with

• compared to the elliptical shape in Figure 5c. For the identification of molecular orbitals, it is often sufficient to compare the dI/dV maps with the shape of the gas-phase molecular orbitals. Using this method, the U-shaped features have previously been associated to the LUMO of TCNQ [5][23][49]. Here

• , we corroborate this assignment by simulating constant-height dI/dV maps of a free, flat-lying molecule. We first calculated the gas-phase electronic structure using density functional theory (DFT) calculations with the B3PW91 functional and the 6-31g(d,p) basis set as implemented in the Gaussian 09

Microwave-induced electric discharges on metal particles for the synthesis of inorganic nanomaterials under solvent-free conditions

• Vijay Tripathi,
• Harit Kumar,
• Anubhav Agarwal and
• Leela S. Panchakarla

Beilstein J. Nanotechnol. 2020, 11, 1019–1025, doi:10.3762/bjnano.11.86

• surrounding gas, followed by electric discharges [12]. These discharges might lead to the melting of the metal and the evaporation of metal, surrounding carbon, sulfur, and fluorine (from Teflon). A chemical reaction between the metal and sulfur and/or fluorine leads to the formation of metal sulfides and/or

Gas-sensing features of nanostructured tellurium thin films

• Dumitru Tsiulyanu

Beilstein J. Nanotechnol. 2020, 11, 1010–1018, doi:10.3762/bjnano.11.85

• Dumitru Tsiulyanu CIMAN Research Centre of Department of Physics, Technical University, bul. Dacia 41, MD-2060 Chisinau, Moldova 10.3762/bjnano.11.85 Abstract Nanocrystalline and amorphous nanostructured tellurium (Te) thin films were grown and their gas-sensing properties were investigated at

• different operating temperatures with respect to scanning electron microscopy and X-ray diffraction analyses. It was shown that both types of films interacted with nitrogen dioxide, which resulted in a decrease of electrical conductivity. The gas sensitivity, as well as the response and recovery times

• , differed between these two nanostructured films. It is worth mentioning that these properties also depend on the operating temperature and the applied gas concentration on the films. An increase in the operating temperature decreased not only the response and recovery times but also the gas sensitivity of

Atomic layer deposition for efficient oxygen evolution reaction at Pt/Ir catalyst layers

• Stefanie Schlicht,
• Korcan Percin,
• Stefanie Kriescher,
• André Hofer,
• Claudia Weidlich,
• Matthias Wessling and
• Julien Bachmann

Beilstein J. Nanotechnol. 2020, 11, 952–959, doi:10.3762/bjnano.11.79

• voltammograms (ten cycles) were recorded starting at the open-circuit potential (OCP) and oscillating between +0.3 V and +1.6 V vs NHE. Secondly, chronoamperometry was carried out for 15 min at 1.24 V vs NHE. After activation, the electrolyte (0.5 M H2SO4) was deaerated by bubbling inert gas for 20 min. During

• the subsequent measurements, an inert gas flow was maintained over the surface of the liquid electrolyte. Following this pretreatment, the electrochemical analyses consisted of linear sweep voltammograms (LSV) recorded from 0.7 to 1.6 V vs NHE (three scans, 1 mV·s−1). Before every LSV scan a

• , polarisation in GfE electrolyte solution was carried out without gas supply to the cell by performing five voltammetric cycles from OCP between 0.3 and 1.6 V vs NHE (five cycles, 5 mV·s−1, stop potential OCP). This corresponds to approximately 43 min under various potentials in the vanadium electrolyte