Out-of-plane polarization induces a picosecond photoresponse in rhombohedral stacked bilayer WSe₂

• Guixian Liu,
• Yufan Wang,
• Zhoujuan Xu,
• Zhouxiaosong Zeng,
• Lanyu Huang,
• Cuihuan Ge and
• Xiao Wang

Beilstein J. Nanotechnol. 2024, 15, 1362–1368, doi:10.3762/bjnano.15.109

• monolayers of WSe2 were aligned at a 0° angle to form the 3R phase. The graphene/3R WSe2/graphene heterojunctions were aligned and assembled onto a SiO2/Si substrate by the all-dry transfer method. Au/Cr (50/10 nm) electrodes were patterned using standard electron-beam lithography (EBL, Raith 150 Two) and

On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• . Experimental Piezoresistance measurements NCG was synthesized on a 300 nm SiO2/Si substrate by spin coating S1805 (1:10 dilution with propylene glycol methyl ether acetate, PGMEA) at 4000 rpm. The spin-coated Si/SiO2 substrate was loaded in a vacuum furnace and annealed at 600 °C for 10 h at 10−6 mbar. The

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• discussed in this paper were recorded at an excitation wavelength of 532 nm, with a laser working-power close to 0.1 mW, and using a 100× objective (N.A. 0.9), on MoS2 flakes or thin films deposited on SiO2/Si substrate with a SiO2 thickness of 90 ± 6 nm. Application of Raman criteria to characterize MoS2

• incident laser light used in the experiments, the power of the incident light, and the oxide thickness of the SiO2/Si substrate on which the flakes are deposited, on the quality and accuracy of Raman results. Based on this analysis, an experimental protocol has been defined and systematically applied to

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• estimated by the analysis of the D/G line intensity ratio [29][30]. Spectra of the underlying SiO2/Si substrate (red line), nonexposed (green line), and exposed graphene flakes (blue line) are collected in Figure 2D. Most of the graphene flake remains unaltered – the G/2D ratio is close to ½ as expected for

• . Complementary studies performed using both in situ and ex situ AFM reveal the modification in SiO2/Si substrate topography. Our results are important not only for applications of water-assisted FEBIE to etching carbon allotropes and SiO2 materials but also in other fields. For example, where electron-driven

• measurements of the etched lines on the SiO2/Si substrate as a function of the dwell time: A) AFM profiles of lines etched with different dwell times (td = 1, 10, and100 μs); B) 3D AFM image of the SiO2 surface. Exposure time and dose values for the etched lines. Author Contributions The manuscript was

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

• Feitao Li,
• Siyao Wan,
• Dong Wang and
• Peter Schaaf

Beilstein J. Nanotechnol. 2023, 14, 133–140, doi:10.3762/bjnano.14.14

• small pieces were ready for thin film deposition. Metallic bilayers of Au and Ni of three different thickness ratios and a total thickness of 20 nm were deposited onto the SiO2/Si substrate by electron beam evaporation (CS400ES, VON ARDENNE) at a working pressure of 1 × 10−6 mbar. The Au layer was

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• up with a target substrate (SiO2/Si wafer). The sample was dried in a vacuum chamber (ca. 10−4 Torr) at room temperature for 2 h. For PMMA removal, the entire sample was vertically dipped into an acetone bath for 4 h. After that, the exposed graphene on a SiO2/Si substrate was again vertically dipped

Revealing local structural properties of an atomically thin MoSe₂ surface using optical microscopy

• Lin Pan,
• Peng Miao,
• Anke Horneber,
• Alfred J. Meixner,
• Pierre-Michel Adam and
• Dai Zhang

Beilstein J. Nanotechnol. 2022, 13, 572–581, doi:10.3762/bjnano.13.49

• in Figure 1b are high-resolution AFM images of CuPc/MoSe2. The upper inset exhibits a step from the SiO2/Si substrate to the border of the MoSe2 flake, and the lower inset shows a distinct transition from the border to the center of the MoSe2 flake. The MoSe2 flake is fully covered by CuPc molecule

• aggregations, while on the SiO2/Si substrate some CuPc molecules aggregated to a rod-like particle, which has been also reported in the literature [24]. The height profile marked by the dashed white line in Figure 1b is visualized in Figure 1c. It suggests that the center of the MoSe2 flake is slightly thinner

• the SHG spectra collected at the SiO2/Si substrate and the border and center of the MoSe2 flake. The exact positions are marked by the green, red, and blue stars in Figure 1d, respectively. The maximum of the spectra is located at 390 nm. Its second-order nonlinear property is verified by the

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• SiO2/Si substrate were irradiated on one half with 25 keV helium ions. It was found that at a dose of 2 × 1015 ions/cm2 a domain wall could be injected into the structure due to the introduction of lattice defects that locally reduced the perpendicular magnetic anisotropy. By raising the dose slightly

Templating effect of single-layer graphene supported by an insulating substrate on the molecular orientation of lead phthalocyanine

• K. Priya Madhuri,
• Abhay A. Sagade,
• Pralay K. Santra and
• Neena S. John

Beilstein J. Nanotechnol. 2020, 11, 814–820, doi:10.3762/bjnano.11.66

• of PbPc on graphene revealing interconnected highly conducting domains. Results and Discussion The Raman spectrum of CVD-grown single-layer graphene transferred onto a SiO2/Si substrate (referred to as SLG/SiO2/Si hereafter) is presented in Figure 2. A sharp and strong peak at 2680 cm−1 corresponds

• found to be 2.82 nm. Wang et al. carried out a similar study by depositing a 10 nm thin ZnPc film on a graphene/SiO2/Si substrate to study the effects of the molecular orientation on the interfacial electronic properties. The roughness of the film was reported to be 2.47 ± 0.28 nm [19]. The crystallite

• thus give rise to higher current values. Conclusion Structural studies of a thin layer of PbPc (10 nm) deposited on CVD-grown single-layer graphene supported on a SiO2/Si substrate show the presence of a mixture of monoclinic and triclinic polymorphs with, respectively, face-on and edge-on

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• structure (top to bottom) of 200 nm AgI, 22.5 nm Ag3I and 43 nm Ag after iodine exposure on the Ti/SiO2/Si substrate. Nanometer-scale Ag/AgI/PtIr nanojunctions were created by bringing the PtIr tip into direct contact with the thin-film surface while a constant bias voltage of 100 mV was applied on the

Magnetism and magnetoresistance of single Ni–Cu alloy nanowires

• Andreea Costas,
• Camelia Florica,
• Elena Matei,
• Maria Eugenia Toimil-Molares,
• Ionel Stavarache,
• Andrei Kuncser,
• Victor Kuncser and
• Ionut Enculescu

Beilstein J. Nanotechnol. 2018, 9, 2345–2355, doi:10.3762/bjnano.9.219

• obtained from single nanowire measurements is shown in the upper inset. (a) Ni–Cu alloy nanowires placed on SiO2/Si substrates between the interdigitated metallic electrodes obtained by photolithography; (b) alignment of the SiO2/Si substrate with the sample holder of the microscope; (c) the sample covered

Toward the use of CVD-grown MoS₂ nanosheets as field-emission source

• Geetanjali Deokar,
• Nitul S. Rajput,
• Junjie Li,
• Francis Leonard Deepak,
• Wei Ou-Yang,
• Nicolas Reckinger,
• Carla Bittencourt,
• Jean-Francois Colomer and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2018, 9, 1686–1694, doi:10.3762/bjnano.9.160

• . Additionally, the FFT pattern as shown in Figure 4e for the yellow squared area in Figure 4d, confirms well-crystallized MoS2 NSs with the c-axis being normal to the NSs. Between, the vertically aligned MoS2 NSs and the SiO2/Si substrate, a layer (marked with “B” in Figure 4a) containing Mo, S and O (37–55 nm

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• the signal connected with OH− content progressively decreases (not shown). This demonstrates that ceria film deposited on SiO2/Si substrate can sustain annealing at high temperatures up to 900 °C without major concerns regarding the onset of interdiffusion and interface stability. The cross-sectional

Engineering of oriented carbon nanotubes in composite materials

• Razieh Beigmoradi,
• Abdolreza Samimi and
• Davod Mohebbi-Kalhori

Beilstein J. Nanotechnol. 2018, 9, 415–435, doi:10.3762/bjnano.9.41

• of a wide range of materials, spraying can be combined with other methods to fabricate composite materials. In this method, a sheet of CNTs is produced by chemical vapor deposition (CVD) on a SiO2/Si substrate that is coated with a very thin layer of iron as a catalyst. The CNT rows have been grown

Comparative study of post-growth annealing of Cu(hfac)₂, Co₂(CO)₈ and Me₂Au(acac) metal precursors deposited by FEBID

• Marcos V. Puydinger dos Santos,
• Aleksandra Szkudlarek,
• Artur Rydosz,
• Carlos Guerra-Nuñez,
• Fanny Béron,
• Kleber R. Pirota,
• Stanislav Moshkalev,
• José Alexandre Diniz and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 91–101, doi:10.3762/bjnano.9.11

• resistance reduction of three orders of magnitude. The resulting material comprises pure nucleated Au grains with around 16 nm average size. Optical microscopy images showing the 200 nm SiO2/Si substrate and gold electrodes together with (a) 35 nm thick Co–C, (b) 50 nm thick Cu–C and (c) 50 nm thick Au–C FEB

• signal from the chamber, thus highlighting the efficiency of the H2-based purification method. Silicon and oxygen signals originate from the SiO2/Si substrate. (c) Optical (top) and scanning electron (bottom) microscopies of both as-deposited and annealed at 360 °C Au–C FEBID material. This annealing

Optical contrast and refractive index of natural van der Waals heterostructure nanosheets of franckeite

• Patricia Gant,
• Foad Ghasemi,
• David Maeso,
• Carmen Munuera,
• Elena López-Elvira,
• Riccardo Frisenda,
• David Pérez De Lara,
• Gabino Rubio-Bollinger,
• Mar Garcia-Hernandez and
• Andres Castellanos-Gomez

Beilstein J. Nanotechnol. 2017, 8, 2357–2362, doi:10.3762/bjnano.8.235

• Gelpak®) carrier substrate and then transferred to a SiO2/Si substrate by means of an all-dry transfer technique [24]. We employed two different nominal SiO2 thicknesses (ca. 90 and ca. 290 nm) to probe the role of the SiO2 thickness on the optical identification process. We selected those thickness

• substrates at first glance. Figure 2d–f shows similar information as Figure 2a–c but for flakes transferred onto a 92 nm SiO2/Si substrate. Below Figure 2d–f, we include another colour chart for the quick identification of franckeite flakes on 92 nm SiO2 substrates. Another method to estimate the thickness

• technique. By measuring the light reflected by the bare SiO2/Si substrate (Is) and by the flake laying on the SiO2/Si substrate (If) one can determine the optical contrast, C, defined as [2]: Figure 4 shows some optical contrast spectra acquired on franckeite flakes with different thicknesses transferred

Identifying the nature of surface chemical modification for directed self-assembly of block copolymers

• Laura Evangelio,
• Federico Gramazio,
• Matteo Lorenzoni,
• Michaela Gorgoi,
• Francisco Miguel Espinosa,
• Ricardo García,
• Francesc Pérez-Murano and
• Jordi Fraxedas

Beilstein J. Nanotechnol. 2017, 8, 1972–1981, doi:10.3762/bjnano.8.198

• oxide between the brush layer and the SiO2/Si substrate. Experimental Preparation and chemical modification of brush layers The starting substrates were <100> silicon wafers (p-type silicon of 4–40 Ω·cm resistivity) with a native silicon oxide layer on top. A thin film of hydroxyl-terminated polystyrene

Growth, structure and stability of sputter-deposited MoS₂ thin films

• Reinhard Kaindl,
• Bernhard C. Bayer,
• Roland Resel,
• Thomas Müller,
• Viera Skakalova,
• Gerlinde Habler,
• Rainer Abart,
• Alexey S. Cherevan,
• Dominik Eder,
• Maxime Blatter,
• Fabian Fischer,
• Jannik C. Meyer,
• Dmitry K. Polyushkin and
• Wolfgang Waldhauser

Beilstein J. Nanotechnol. 2017, 8, 1115–1126, doi:10.3762/bjnano.8.113

• measurements suggest directions for future work on our PVD MoS2 films. Keywords: electrode; hydrogen evolution reaction (HER); magnetron sputter deposition; MoS2; reticulated vitreous carbon (RVC) foam; SiO2/Si substrate; Introduction Molybdenum disulphide (MoS2) is a layered chemical compound comprised of

The integration of graphene into microelectronic devices

• Guenther Ruhl,
• Sebastian Wittmann,
• Matthias Koenig and
• Daniel Neumaier

Beilstein J. Nanotechnol. 2017, 8, 1056–1064, doi:10.3762/bjnano.8.107

• Society. Schematic illustration of the basic approach for the method of direct growth of graphene on a SiO2 surface. (a) A thin Ni film is deposited on a SiO2/Si substrate. (b) Plasma CVD is performed. (c) Carbon atoms diffuse into the Ni film, and graphene is preferentially grown along the interface

• between the Ni and SiO2 layers. (d) Graphene on a SiO2/Si substrate is realized by removing the Ni film using a chemical etching technique. Reprinted with permission from [29], copyright 2012 American Chemical Society. Schematic illustration of the mobility (experiment) as a function of the ratio between

CVD transfer-free graphene for sensing applications

• Chiara Schiattarella,
• Sten Vollebregt,
• Tiziana Polichetti,
• Brigida Alfano,
• Ettore Massera,
• Maria Lucia Miglietta,
• Girolamo Di Francia and
• Pasqualina Maria Sarro

Beilstein J. Nanotechnol. 2017, 8, 1015–1022, doi:10.3762/bjnano.8.102

• of graphene down to micrometre-size dimensions. A photo-lithographic process, combined with SF6 dry etching, has been used to shape the Mo in the desired form. Graphene layers have then been grown on pre-patterned Mo/SiO2/Si substrate by means of AIXTRON BlackMagic Pro equipment, setting the

Nitrogen-doped twisted graphene grown on copper by atmospheric pressure CVD from a decane precursor

• Ivan V. Komissarov,
• Nikolai G. Kovalchuk,
• Vladimir A. Labunov,
• Ksenia V. Girel,
• Olga V. Korolik,
• Mikhail S. Tivanov,
• Algirdas Lazauskas,
• Mindaugas Andrulevičius,
• Tomas Tamulevičius,
• Viktoras Grigaliūnas,
• Šarunas Meškinis,
• Sigitas Tamulevičius and
• Serghej L. Prischepa

Beilstein J. Nanotechnol. 2017, 8, 145–158, doi:10.3762/bjnano.8.15

• the insets to Figures Figure 2a and Figure 2b the 2D peaks are shown revealing the symmetry of the 2D band. The latter indicates the weak interlayer interaction, which will be discussed later. In Figure 3a we demonstrate the Rayleigh image of sample A transferred to a SiO2/Si substrate. Raman mapping

• 1588 cm−1 against 1580 cm−1 for SLG [25]. Figure 5a–d shows Raman maps (400 points) of sample B transferred onto a SiO2/Si substrate. The corresponding histograms are presented in Figure 6a–d. A single Raman spectrum was accumulated for 10 s with a laser wavelength of 473 nm and a beam diameter of

• partitioning procedure following different parameters (this result is not shown here). The obtained results are in reasonable agreement with each other. Therefore, in order to demonstrate the universality of the elaborated method, for sample B on a SiO2/Si substrate, the Raman data set splitting was based on

Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers

• Felix Pyatkov,
• Svetlana Khasminskaya,
• Vadim Kovalyuk,
• Frank Hennrich,
• Manfred M. Kappes,
• Gregory N. Goltsman,
• Wolfram H. P. Pernice and
• Ralph Krupke

Beilstein J. Nanotechnol. 2017, 8, 38–44, doi:10.3762/bjnano.8.5

• electron beam lithography on top of Si3N4/SiO2/Si substrate. Au/Cr contacts were produced by physical vapor deposition, and 600 nm wide, half-etched Si3N4-waveguides were formed with reactive ion etching. A typical sample contains tens of contact pairs and CNTs that were placed in between using

Orientation of FePt nanoparticles on top of a-SiO₂/Si(001), MgO(001) and sapphire(0001): effect of thermal treatments and influence of substrate and particle size

• Martin Schilling,
• Paul Ziemann,
• Zaoli Zhang,
• Johannes Biskupek,
• Ute Kaiser and
• Ulf Wiedwald

Beilstein J. Nanotechnol. 2016, 7, 591–604, doi:10.3762/bjnano.7.52

• Figure 2a the RHEED pattern for a 3 nm Fe48Pt52 film on a SiO2/Si substrate is presented after post annealing at 650 °C for 30 min. A diffuse intensity distribution is observed without any superposed streaks or spots. The bright ring around the direct beam is a halo feature due to the RHEED arrangement

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

• conventionally or with a laser the flat morphology of square, line, or tip deposits on the pre-patterned SiO2/Si substrate changes (Figure 3 and Figure 4). While the laser allows for local heating, the conventional hotplate approach allows for more accurate temperature measurements. The visible onset of Cu

• nanocrystal precipitation on the deposit surface starts at around 150 °C for the Cu(hfac)2 deposits on the pre-patterned SiO2/Si substrate. Further heating to about 200 °C for 30 min did not visibly change the appearance of the Cu nanocrystal precipitation. EDX analysis after conventional heating to 200 °C

Analytical development and optimization of a graphene–solution interface capacitance model

• Hediyeh Karimi,
• Rasoul Rahmani,
• Reza Mashayekhi,
• Leyla Ranjbari,
• Amir H. Shirdel,
• Niloofar Haghighian,
• Parisa Movahedi,
• Moein Hadiyan and
• Razali Ismail

Beilstein J. Nanotechnol. 2014, 5, 603–609, doi:10.3762/bjnano.5.71

• -based devices, graphene with its outstanding properties such as consuming less energy and faster heat dissipating show a great promise in electrolyte-gated graphene field-effect transistors (EGFETs) [20]. An EGFET fabricated on a SiO2/Si substrate with gold source and drain electrodes and a graphene