Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• leads to a reduction in microstrain and dislocation density. The optical studies using UV–vis–NIR spectroscopy reveal that the transmittance of films increases with substrate temperature. Further, the shift in transmittance threshold towards lower wavelengths with substrate temperature indicates that

• grow films with superior quality in terms of grain size, dislocation density, and optical and electrical properties to enhance the performance of ZnTe-based optoelectronic devices and solar cells. Experimental ZnTe films were deposited on quartz (Qz) using RF sputtering at different substrate

• intensity [26]. To investigate the effect of substrate temperature on peak broadening of ZnTe films, various structural parameters including crystallite size, microstrain, and dislocation density were calculated corresponding to the most prominent peak. The crystallite size (D) was calculated using

Effect of radiation-induced vacancy saturation on the first-order phase transformation in nanoparticles: insights from a model

• Aram Shirinyan and
• Yuriy Bilogorodskyy

Beilstein J. Nanotechnol. 2024, 15, 1453–1472, doi:10.3762/bjnano.15.117

• (dpa) (equivalent to 40 years of service). Under irradiation, the main point defects are vacancies and interstitials. Point defects can develop into clusters of dislocations, stacking faults, or voids. They can also relax onto existing sinks such as dislocation loops, grain boundaries, phase interfaces

• , in nanosilver, a dislocation loop migrates to the free surface of the particle within 0.1 s [4]. This suggests that dislocation loops and interstitials are leveled out fairly quickly in nanoparticles, making vacancies the main defects that affect the material’s properties. According to experimental

The role of a tantalum interlayer in enhancing the properties of Fe₃O₄ thin films

• Hai Dang Ngo,
• Vo Doan Thanh Truong,
• Van Qui Le,
• Hoai Phuong Pham and
• Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

• interlayer has an effect on the crystallization of the Fe3O4 film. XRD patterns provide further information about the structural properties of a material, such as lattice constant (a), dislocation density (δ), and microstrain (ε). Bragg’s law was used to calculate the d-spacing of the Fe3O4(311) and Fe3O4

• larger lattice mismatch between the Fe3O4 thin film and the MgO layer compared to the Fe3O4 thin film and MgO substrate. In addition, the dislocation density was calculated by the following relation [31]: where D is the crystallite size, which can be found by using the Scherrer equation. The dislocation

• density of sample 1 is the highest, 6.6 × 10−4 nm−2, resulting from oxygen atoms Fe3O4 occupying random dangling bonds of the SiO2 surface [13][33]. In contrast, Fe3O4 thin films deposited on MgO have a low dislocation density of 0.8 × 10−4 nm−2 for MgO substrate and 1.9 × 10−4 nm−2 and 0.9 × 10−4 nm−2

Effects of cutting tool geometry on material removal of a gradient nanograined CoCrNi medium entropy alloy

• Yu-Sheng Lu,
• Yu-Xuan Hung,
• Thi-Xuyen Bui and
• Te-Hua Fang

Beilstein J. Nanotechnol. 2024, 15, 925–940, doi:10.3762/bjnano.15.76

• and partial dislocation motions in crystalline materials were examined by common neighbor analysis (CNA) of the modules in OVITO. Cutting force, shear strain distribution, von Mises stress analysis, crystal structure evolution, temperature distribution, and calculation of material wear rate were

• al. have shown that, as the grain size changes, the difference in friction coefficient with each cutting length is chaotic and does not follow the law of grain size increase [23]. The grain size affects the coefficient of friction in a rather complex way. Dislocation accumulation, lattice instability

• boundary interference. Therefore, only dislocation slip and twin boundary formation occur in grains of the sample in Figure 7c. The contact region between the chip and the cutting tool in the sample in Figure 7b has denser grain boundaries and stacking fault extrusions, which also explains why the von

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• maximum (FWHM) as well as dislocation density values after annealing the samples at 450 °C indicates a reduction in structural defects and an enhancement in the crystallographic quality of the produced material. The determined parameter values for the 1×, 2×, and 3× samples exhibit only a minor range of

• × samples, as well as topography profiles along the marked lines (every 500 nm) presented at the same scale. (A) Diffractograms and (B) variations in crystallite sizes and dislocation density determined for as-grown and HT+RTA films. Raman spectra of as-grown (B), 2× (C), and 3× (D) CuO/Si structures along

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• The RBS-c is an effective characterization technique for the estimation of amorphous depth and defect concentration in implanted single crystals. The RBS-c analysis for point defects shows a linear behaviour in defect density with ion fluence. The formation of highly dense dislocation loops beyond the

Titania nanoparticles for photocatalytic degradation of ethanol under simulated solar light

• Evghenii Goncearenco,
• Iuliana P. Morjan,
• Claudiu Teodor Fleaca,
• Florian Dumitrache,
• Elena Dutu,
• Monica Scarisoreanu,
• Valentin Serban Teodorescu,
• Alexandra Sandulescu,
• Crina Anastasescu and
• Ioan Balint

Beilstein J. Nanotechnol. 2023, 14, 616–630, doi:10.3762/bjnano.14.51

• of the complex PL band at 400 nm, the resolution of which into the components requires another investigation. Oxygen and titanium vacancies have been found. These points defects are created most probably at the surface of the powder particles because in the HRTEM figures we do not see any dislocation

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• following the procedure described elsewhere [31][32]. The surface morphology depends on the time of photoetching and the overall dislocation density [32]. Next, the fabricated nanostructured GaN platforms were coated with a Ag layer using PLD and MS to form GaN/Ag SERS substrates (Figure 1). To compare SERS

• , nanostructured GaN platforms were prepared from commercial MOCVD-grown GaN on sapphire wafers by photoetching [45]. The 5 μm thick GaN layers were n-type with a carrier concentration n = 1 × 1018 cm−3 and a dislocation density of about 8 × 108 cm−2. The 5 × 5 mm samples were cut from 3″ MOCVD-grown GaN on

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• seen that the predominant peaks are (222) and (400), which are the preferred orientations before and after laser annealing. The intensities of the crystallite peaks orientation increased and attained a maximum at 200 mJ. The crystallite size (D) and the dislocation density (δ) were determined from the

• XRD peaks using the following equations [28]: where D, 0.9, λ, β, and δ are the crystallite size, the shape factor, the wavelength of the incident X-rays, the full width at half maximum of the reflection at the diffraction angle θβ, and the dislocation density, respectively. The average crystallite

• size increased with the laser energy up to 200 mJ. It decreased to reach a minimum at an energy of 240 mJ. This trend in crystallite size is due to the rearrangement of the nanostructure. The particles sizes increase, defects are reduced, and the dislocation density (δ) decreases from 6.53 × 1014 to

Bending and punching characteristics of aluminum sheets using the quasi-continuum method

• Man-Ping Chang,
• Shang-Jui Lin and
• Te-Hua Fang

Beilstein J. Nanotechnol. 2022, 13, 1303–1315, doi:10.3762/bjnano.13.108

• , the effect of crystal orientation on the materials will be firstly considered. The mechanical properties of single-crystal materials can be strongly affected by the crystal orientation [56], such as the elastic stress [57], thermomechanical fatigue behavior [58], and the dislocation effect of

Effects of temperature and repeat layer spacing on mechanical properties of graphene/polycrystalline copper nanolaminated composites under shear loading

• Chia-Wei Huang,
• Man-Ping Chang and
• Te-Hua Fang

Beilstein J. Nanotechnol. 2021, 12, 863–877, doi:10.3762/bjnano.12.65

• ) composites under shear loading are investigated by molecular dynamics simulations. The effects of different temperatures, graphene chirality, repeat layer spacing, and grain size on the mechanical properties, such as failure mechanism, dislocation, and shear modulus, are observed. The results indicate that

• . Keywords: dislocation; graphene/Cu; molecular dynamics; shear; self-healing; Introduction Graphene is a monolayered hexagonal thin film composed of sp2-bonded carbon atoms and has extraordinary properties for applications in nanoelectronics [1][2][3][4][5][6]. However, because of the two-dimensional

• applying a consistent velocity to the composites along the x-direction. The grain size D of the simulation model ranges from 4.24 to 9.43 nm. Deformation and dislocation evolution of the model are analyzed and visualized using the Open Visualization Tool (OVITO). Results and Discussion Effect of

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• subsurface voids was indeed also observed [16]. Threshold doses for the formation of a subsurface dislocation band, for the onset of amorphization, and for the formation of nanobubbles and larger voids, were established (as shown earlier in Figure 1c). Tan et al. performed detailed TEM cross-sectional

Determination of elastic moduli of elastic–plastic microspherical materials using nanoindentation simulation without mechanical polishing

• Hongzhou Li and
• Jialian Chen

Beilstein J. Nanotechnol. 2021, 12, 213–221, doi:10.3762/bjnano.12.17

• effect of indentation [12]. Swadener et al. pointed out that, for some cases, the hardness is decreased with decreasing depth due to the predicted decrease in dislocation density [12]. The indented specimen is assumed to be a perfectly flat surface for the Oliver–Pharr method, thus ignoring the

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• cm−2 [13][14][15][16][17], as well as good electrical conductivity for up to approx. 1018 ions cm−2 [9][10][18]. Sulfur vacancies (SVs) and the formation of a dislocation–divacancy complex can lead to significant n-doping in MoS2 [19], which shifts the threshold voltage (Vth) of the FET to higher

Observation of unexpected uniaxial magnetic anisotropy in La_2/3Sr_1/3MnO₃ films by a BaTiO₃ overlayer in an artificial multiferroic bilayer

• John E. Ordóñez,
• Lorena Marín,
• Luis A. Rodríguez,
• Pedro A. Algarabel,
• José A. Pardo,
• Roger Guzmán,
• Luis Morellón,
• César Magén,
• Etienne Snoeck,
• María E. Gómez and
• Manuel R. Ibarra

Beilstein J. Nanotechnol. 2020, 11, 651–661, doi:10.3762/bjnano.11.51

• strain maps reflect homogeneous and dislocation-free STO and LSMO layers, and a BTO layer with several linear defects, most of which are concentrated close to the BTO/LSMO interfaces. Misfit dislocation-free epitaxial growth of LSMO films under (001)-oriented STO substrates is expected and widely

• a quantitative strain analysis, profiles of εxx and εzz extracted from the GPA maps are plotted in Figure 5d and Figure 5e. These profiles are traced perpendicular to the interfaces, along two zones: Through a horizontal misfit dislocation (Profile 1) and through a dislocation-free region (Profile 2

• ). For comparison between the strain results obtained by GPA and by RSMs, we also plotted strain profiles in terms of fa-system and fc-system. In Profile 1, we see that εxx is equal to zero, on average, inside the STO and LSMO systems which presents a discontinuity around the BTO dislocation and finally

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

• Markus Tautz,
• Maren T. Kuchenbrod,
• Joachim Hertkorn,
• Robert Weinberger,
• Martin Welzel,
• Arno Pfitzner and
• David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

• structure of a GaN layer stack grown by metal organic chemical vapour deposition (MOCVD) was varied in the unintentionally doped u-GaN bulk region. Different sequences of 2D and 3D grown layers led to a variation in dislocation density, which was monitored by photoluminescence microscopy (PLM) and X-ray

• phosphor-converted white LEDs [2]. To reach a high internal quantum efficiency (IQE), crystal quality must be high in terms of low dislocation density [3]. Dislocations cause non-radiative recombination of induced electron hole pairs and thus lower efficiency. That is why considerable effort is put into

• the optimization of epitaxial growth to achieve the lowest possible dislocation density. Most often, GaN is produced in the LED industry by metal organic chemical vapour deposition (MOCVD) in a heteroepitaxial process on sapphire substrates [4]. The lattice parameter mismatch of ca. 13.8% between GaN

Abrupt elastic-to-plastic transition in pentagonal nanowires under bending

• Sergei Vlassov,
• Magnus Mets,
• Boris Polyakov,
• Jianjun Bian,
• Leonid Dorogin and
• Vahur Zadin

Beilstein J. Nanotechnol. 2019, 10, 2468–2476, doi:10.3762/bjnano.10.237

• -fold twinned structure prevents propagation of critical defects, leading to dislocation pile up that may lead to sudden stress release, which is observed as an abrupt plastic event. Moreover, we found that if the NWs are coated with alumina, the abrupt plastic event is not observed and the NWs can

• boundaries [42]. With the progression of bending deformation, another dislocation source is also activated, and a new dislocation nucleation and propagation lead to the second distinct load drop of the loading curve (Figure 8ii). In the following stage, the bending force gradually becomes stable at

• dislocation nucleation sites because of the stress concentration, and therefore deformation is easier to sustain by new dislocation nucleation rather than cross-slipping of existing dislocation at twin boundaries. On the basis of the conducted experiments, electron microscopy observations and simulations we

Superconducting switching due to a triplet component in the Pb/Cu/Ni/Cu/Co₂Cr_1−xFe_xAl_y spin-valve structure

• Andrey Andreevich Kamashev,
• Nadir Nurgayazovich Garif’yanov,
• Aidar Azatovich Validov,
• Joachim Schumann,
• Vladislav Kataev,
• Bernd Büchner,
• Yakov Victorovich Fominov and
• Ilgiz Abdulsamatovich Garifullin

Beilstein J. Nanotechnol. 2019, 10, 1458–1463, doi:10.3762/bjnano.10.144

• even larger because the density of dislocation increases with decreasing Tsub. As to the HA layer, our SQUID magnetization measurements show that the onset of the saturation of its magnetization occurs at 30 Oe. At higher magnetic fields the magnetization continues to increase slightly up to the

Concurrent nanoscale surface etching and SnO₂ loading of carbon fibers for vanadium ion redox enhancement

• Jun Maruyama,
• Shohei Maruyama,
• Tomoko Fukuhara,
• Toru Nagaoka and
• Kei Hanafusa

Beilstein J. Nanotechnol. 2019, 10, 985–992, doi:10.3762/bjnano.10.99

• the slightly retained amorphous carbon might prevent potential dislocation and dissolution of the SnO2 particles. Conclusion The thermal oxidation of Sn-containing carbonaceous thin films on a carbon fiber surface, which was formed by sublimation, deposition, and pyrolysis of SnPc during a single-step

Self-assembly and wetting properties of gold nanorod–CTAB molecules on HOPG

• Imtiaz Ahmad,
• Floor Derkink,
• Tim Boulogne,
• Pantelis Bampoulis,
• Harold J. W. Zandvliet,
• Hidayat Ullah Khan,
• Rahim Jan and
• E. Stefan Kooij

Beilstein J. Nanotechnol. 2019, 10, 696–705, doi:10.3762/bjnano.10.69

• time, whereas the ones on the right portion begin to disappear. We ascribe this disappearance of the stripes to originate from the dislocation of CTAB molecules, creating point defects. Such defects will make the molecules less tightly bound at the defect site, and hence, support the growth of defects

Hydrogen-induced plasticity in nanoporous palladium

• Markus Gößler,
• Eva-Maria Steyskal,
• Markus Stütz,
• Norbert Enzinger and
• Roland Würschum

Beilstein J. Nanotechnol. 2018, 9, 3013–3024, doi:10.3762/bjnano.9.280

• above-mentioned tunable properties in nanoporous metals. The deformation mechanism in such structures has been discussed in detail. Since nanoporous materials exhibit high surface-to-volume ratios, moving dislocations may escape crystals via the surface, which may lead to a scenario of dislocation

• starvation [27]. This dislocation starvation also implies that the work hardening mechanism, which is based on dislocation interactions, is not active. However, current literature suggests that the active deformation mechanism in npAu is dislocation slip [28] and that dislocation starvation is not effective

• at low strains in npAu. Despite the local dislocation activity in the ligaments, macroscopic plasticity, involving dislocations travelling larger distances in the network structure, is hard to achieve in nanoporous metals [15]. Plastic deformation in npPd has not been the subject of experimental

Friction reduction through biologically inspired scale-like laser surface textures

• Johannes Schneider,
• Vergil Djamiykov and
• Christian Greiner

Beilstein J. Nanotechnol. 2018, 9, 2561–2572, doi:10.3762/bjnano.9.238

• dislocation activity under a tribological load [8]. The microstructure under the contact therefore undergoes drastic and complex changes during sliding, which in themselves strongly depend on the nature of the tribological loading conditions [52]. We have studied such phenomena in detail recently with high

Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

• Nan Guan,
• Andrey Babichev,
• Martin Foldyna,
• Dmitry Denisov,
• François H. Julien and
• Maria Tchernycheva

Beilstein J. Nanotechnol. 2018, 9, 2248–2254, doi:10.3762/bjnano.9.209

• tunable bandgap [14] and reduced dislocation density [15][16], nitride nanowires (NWs) have become important materials for optical components in the visible to ultraviolet (UV) spectral range [17][18]. Despite their small size, single NW light emitting diodes (LEDs) can produce bright electroluminescence

The inhibition effect of water on the purification of natural gas with nanoporous graphene membranes

• Krzysztof Nieszporek,
• Tomasz Pańczyk and
• Jolanta Nieszporek

Beilstein J. Nanotechnol. 2018, 9, 1906–1916, doi:10.3762/bjnano.9.182

• was maintained at 300 K using velocity rescaling with a stochastic term [19] and a time constant of 0.1 ps. In order to enable possible deformations, the graphene sheets were flexible; to avoid vertical dislocation due to collisions with separated gases, the carbon atoms in each graphene corner were

Toward the use of CVD-grown MoS₂ nanosheets as field-emission source

• Geetanjali Deokar,
• Nitul S. Rajput,
• Junjie Li,
• Francis Leonard Deepak,
• Wei Ou-Yang,
• Nicolas Reckinger,
• Carla Bittencourt,
• Jean-Francois Colomer and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2018, 9, 1686–1694, doi:10.3762/bjnano.9.160

• nm Mo film at 850 °C on SiO2/Si substrates: (a) HAADF-STEM image at low magnification with different observed materials layers marked; (b) TEM image at the interface between the MoS2 NSs and the Pt layer; (c) higher magnification of layer A showing edge dislocation (marked with “T”) in the MoS2