Wavelength-dependent correlation of LIPSS periodicity and laser penetration depth in stainless steel

• Nitin Chaudhary,
• Chavan Akash Naik,
• Shilpa Mangalassery,
• Jai Prakash Gautam and
• Sri Ram Gopal Naraharisetty

Beilstein J. Nanotechnol. 2025, 16, 1302–1315, doi:10.3762/bjnano.16.95

• on the laser intensity. In the linear regime, pure metals such as copper, aluminum, and silver, which have low electrical resistivity, exhibit a low penetration depth for EM waves. In contrast, composite alloys such as stainless steel have higher resistivity and show a higher penetration depth than

Focused ion beam-induced platinum deposition with a low-temperature cesium ion source

• Thomas Henning Loeber,
• Bert Laegel,
• Meltem Sezen,
• Feray Bakan Misirlioglu,
• Edgar J. D. Vredenbregt and
• Yang Li

Beilstein J. Nanotechnol. 2025, 16, 910–920, doi:10.3762/bjnano.16.69

• currents. Deposition rate, material composition, and electrical resistivity were examined and compared with layers deposited at comparable settings with a standard gallium (Ga) FIB. The deposition rate is found to depend linearly on the current density. The rate is comparable for Cs+ and Ga+ under similar

• conditions, but the deposit has lower Pt content for Cs+. The electrical resistivity of the deposit is found to be higher for Cs+ than for Ga+ and decreasing with increasing acceleration voltage. Keywords: cesium ion source; cold atom ion source; focused ion beam (FIB); FIB-induced deposition (FIBID

• Cs+ FIB in comparison to results of layer deposition induced by Rb+ and Ga+. Pt was deposited at different acceleration voltages and ion beam currents to evaluate the deposition rate and the electrical resistivity of the layers. To measure the grain structure as well as the material composition using

Nanoscale capacitance spectroscopy based on multifrequency electrostatic force microscopy

• Pascal N. Rohrbeck,
• Lukas D. Cavar,
• Franjo Weber,
• Peter G. Reichel,
• Mara Niebling and
• Stefan A. L. Weber

Beilstein J. Nanotechnol. 2025, 16, 637–651, doi:10.3762/bjnano.16.49

• , which is 25·1021 Ω, taking into account the electrical resistivity of silicon dioxide of [92] and a thickness of the SiO2 layer of 300 nm on an area of 9 μm2. The observed discrepancy may be attributed to the increased conductivity of the microcapacitors, which is a result of the incorporation of Ga

Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• points towards a nearly ohmic contact between ZnTe film and quartz substrate, which is necessary for the fabrication of the optoelectronic device. The conductivity (σ) of films was determined using the relation [41] where ρ is the electrical resistivity, R is the resistance of the film, A is the area of

Superconducting spin valve effect in Co/Pb/Co heterostructures with insulating interlayers

• Andrey A. Kamashev,
• Nadir N. Garif’yanov,
• Aidar A. Validov,
• Vladislav Kataev,
• Alexander S. Osin,
• Yakov V. Fominov and
• Ilgiz A. Garifullin

Beilstein J. Nanotechnol. 2024, 15, 457–464, doi:10.3762/bjnano.15.41

• without insulating interlayers at the Co1/Pb/Co2 interfaces was prepared for comparison. The list of the studied CoOx (3.5 nm)/Co1 (3 nm)/I1/Pb(dPb)/I2/Co2 (3 nm)/Si3N4 (85 nm) samples with variable Pb layer thickness dPb is presented in Table 1. Results Electrical resistivity measurements were carried

Upper critical magnetic field in NbRe and NbReN micrometric strips

• Zahra Makhdoumi Kakhaki,
• Antonio Leo,
• Federico Chianese,
• Loredana Parlato,
• Giovanni Piero Pepe,
• Angela Nigro,
• Carla Cirillo and
• Carmine Attanasio

Beilstein J. Nanotechnol. 2023, 14, 45–51, doi:10.3762/bjnano.14.5

• the electrical resistivity [6]. This feature is related to the polycrystalline or amorphous nature of these materials when deposited in a thin-film form [4][7][8]. In addition to the applicative interest, the study of these materials is relevant from a fundamental point of view. NbxRe1−x (NbRe) for

• is still lacking. Finally, while the morphological properties are similar to those of NbRe films [18], the values of the electrical resistivity stand slightly higher with respect to NbRe films [4][7][18]. The value of the upper critical magnetic field is a fundamental quantity that gives a measure of

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• adherence to the substrate, very high thermal stability (up to 600 °C), and high electrical conductivity [14]. Over the last decades, the development of solar cells has grown dramatically. The cells have become larger, thinner, and lighter. This increases the electrical resistivity, which is undesirable

Enhanced electronic transport properties of Te roll-like nanostructures

• E. R. Viana,
• N. Cifuentes and
• J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

• nanostructures [11][12][13][14]. Te NTs have shown metallic character and decreasing electrical resistivity with temperature [11]. Te NWs encapsulated in boron nitride nanotubes have shown a large current-carrying capacity and p-type semiconducting characteristics, which can be reversed to n-type behavior after

• -nanostructure back-gate FETs, as well as the electrical resistivity of the nanostructures as a function of temperature from 5 to 400 K. The transport measurements were carried out in a low-noise custom-made system for electrical characterization of FET devices [16][17][18]. FET devices were built by laser

• and μh(320 K) = 273 cm2/Vs, while the hole concentration was estimated to be p(5 K) = 8.8 × 1010 cm−2 and p(320 K) = 2.8 × 1016 cm−3. The measured electrical resistivity of NW-1 and NW-2, as a function of the temperature, from 300 down to 5 K, is shown in Figure 5. Two linear regions can be observed

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• effort to prepare a Cr/Ge deposit in a nanostructured form. Using chemical vapor deposition (CVD), we succeeded to synthesize deposits containing CrGex NWs. Their structure was elucidated and measurements of individual NWs were carried out to determine their electrical resistivity. Results and Discussion

Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• unpredictable programming feature in phase-change memory devices can be utilized in hardware security applications. Keywords: amorphous materials; drift; electrical breakdown; electrical resistivity; phase-change memory; pulse measurement; stochastic processes; threshold switching; Introduction Phase-change

High-responsivity hybrid α-Ag₂S/Si photodetector prepared by pulsed laser ablation in liquid

• Raid A. Ismail,
• Hanan A. Rawdhan and
• Duha S. Ahmed

Beilstein J. Nanotechnol. 2020, 11, 1596–1607, doi:10.3762/bjnano.11.142

• Optics, Germany). An Ag2S/Si photodetector was prepared by depositing a Ag2S layer on the front side of a silicon substrate through a mask by drop-casting. A single-crystal p-type silicon (111) substrate with an electrical resistivity of 3–5 Ω·cm and a thickness of 300 μm was used. As shown in Figure 2

• decrease in the electrical resistivity of Ag2S. Figure 12 illustrates the I–V characteristics under illumination of the heterojunctions at reverse bias. The photocurrent of the heterojunction increased from 460 to 1500 μA at 7.5 V after CTAB was added to the Tu solution. This result can be ascribed to the

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• excellent optical and electrical properties [4][5]. It is a wide-bandgap material (3.6–4.0 eV) with low electrical resistivity. ITO contains the rare and expensive metal indium, which is reflected in the market value of the material [6]. Hence, a reduction of the ITO consumption is desirable. ITO films with

• the two adjacent sample holders. Four-point probe measurements Electrical analyses that involved the measurements of electrical resistivity and sheet resistance of the prepared thin films were performed using a four-point probe system (Pro 4 Lucab Lab). The electrical resistance of the samples was

• -deposited and annealed IAAI multilayer and ITO films. Elemental composition of the IAAI films before and after annealing on the silicon substrate. Comparison of electrical resistivity, sheet resistance, carrier concentration, and carrier mobility of as-deposited and annealed ITO and IAAI multilayer films

Superconducting switching due to a triplet component in the Pb/Cu/Ni/Cu/Co₂Cr_1−xFe_xAl_y spin-valve structure

• Andrey Andreevich Kamashev,
• Nadir Nurgayazovich Garif’yanov,
• Aidar Azatovich Validov,
• Joachim Schumann,
• Vladislav Kataev,
• Bernd Büchner,
• Yakov Victorovich Fominov and
• Ilgiz Abdulsamatovich Garifullin

Beilstein J. Nanotechnol. 2019, 10, 1458–1463, doi:10.3762/bjnano.10.144

• magnetic field of 3 kOe possibly due to some magnetic inhomogeneity of the HA layer. We note that the magnetic response from the Ni layer cannot be resolved here due to its small value. The electrical resistivity was measured using the standard four-point method. The top insulating layer (Si3N4) was

Enhancement in thermoelectric properties due to Ag nanoparticles incorporated in Bi₂Te₃ matrix

• Srashti Gupta,
• Dinesh Chandra Agarwal,
• Bathula Sivaiah,
• Sankarakumar Amrithpandian,
• Kandasami Asokan,
• Ajay Dhar,
• Binaya Kumar Panigrahi,
• Devesh Kumar Avasthi and
• Vinay Gupta

Beilstein J. Nanotechnol. 2019, 10, 634–643, doi:10.3762/bjnano.10.63

• conductivity with increase in Ag content in Bi2Te3 may be due to the enhanced carrier scattering at the interfaces of metal and semiconductor [20] and due to the presence of oxygen in all samples. An earlier report also suggests that the electrical resistivity of PbTe can increase up to 2–3 orders of magnitude

Relation between thickness, crystallite size and magnetoresistance of nanostructured La_1−xSr_xMn_yO_3±δ films for magnetic field sensors

• Rasuole Lukose,
• Valentina Plausinaitiene,
• Milita Vagner,
• Nerija Zurauskiene,
• Skirmantas Kersulis,
• Virgaudas Kubilius,
• Karolis Motiejuitis,
• Birute Knasiene,
• Voitech Stankevic,
• Zita Saltyte,
• Martynas Skapas,
• Algirdas Selskis and
• Evaldas Naujalis

Beilstein J. Nanotechnol. 2019, 10, 256–261, doi:10.3762/bjnano.10.24

• ]. Transport and magnetoresistive properties In nanostructured manganite materials the difference in dimensions of crystallites and change of the relative amount of grain boundaries (GBs) and film composition significantly change the transport behaviour [17][21]. The decrease of electrical resistivity and the

Bidirectional biomimetic flow sensing with antiparallel and curved artificial hair sensors

• Claudio Abels,
• Antonio Qualtieri,
• Toni Lober,
• Alessandro Mariotti,
• Lily D. Chambers,
• Massimo De Vittorio,
• William M. Megill and
• Francesco Rizzi

Beilstein J. Nanotechnol. 2019, 10, 32–46, doi:10.3762/bjnano.10.4

• circuit was excited with Vexc = +3.3 V DC, while its voltage output was connected to a benchtop digital multimeter (Agilent 34405A). Influence of temperature on micro strain gauges As electrical resistivity of metals is temperature-dependent, a drift in the offset voltage may occur while the flow sensor

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

• Florian Dumitrache,
• Iuliana P. Morjan,
• Elena Dutu,
• Ion Morjan,
• Claudiu Teodor Fleaca,
• Monica Scarisoreanu,
• Alina Ilie,
• Marius Dumitru,
• Cristian Mihailescu,
• Adriana Smarandache and
• Gabriel Prodan

Beilstein J. Nanotechnol. 2019, 10, 9–21, doi:10.3762/bjnano.10.2

• (bottom) samples. a) The Raman spectra of the as-prepared samples; b) The dependence from the Raman and XPS analysis. a) Optical absorption spectra of the nanoparticles, b) Tauc’s plot for Zn/F-doped and undoped SnO2 nanoparticles (αhν)2 versus (hν). Electrical resistivity measurements. Evaluation of the

Optimization of Mo/Cr bilayer back contacts for thin-film solar cells

• Nima Khoshsirat,
• Fawad Ali,
• Vincent Tiing Tiong,
• Mojtaba Amjadipour,
• Hongxia Wang,
• Mahnaz Shafiei and
• Nunzio Motta

Beilstein J. Nanotechnol. 2018, 9, 2700–2707, doi:10.3762/bjnano.9.252

• bilayer electrical resistivity at different deposition pressures with respect to the sputtering power. As can be seen, the resistivity of Mo/Cr bilayer is directly proportional to the working pressure, while it shows an inverse relation to the sputtering power. Accordingly, the resistivity of the layers

• substrate. The experimental results indicate that the Cr layer can significantly improve the adhesion of Mo layer to the glass substrate even for samples that are deposited at high power and low pressure. The lowest electrical resistivity (0.66 Ω/sq ) was observed for a sample with Mo layer deposited at 200

An implementation of spin–orbit coupling for band structure calculations with Gaussian basis sets: Two-dimensional topological crystals of Sb and Bi

• Sahar Pakdel,
• Mahdi Pourfath and
• J. J. Palacios

Beilstein J. Nanotechnol. 2018, 9, 1015–1023, doi:10.3762/bjnano.9.94

• potential applications in optoelectronics [34][35][36][37], low thermal conductance with low electrical resistivity for energy generation through thermoelectricity [38], and exotic topological features under strain [39][40][41]. However, it was not until last year that few experimental works brought all

Electron interaction with copper(II) carboxylate compounds

• Michal Lacko,
• Peter Papp,
• Iwona B. Szymańska,
• Edward Szłyk and
• Štefan Matejčík

Beilstein J. Nanotechnol. 2018, 9, 384–398, doi:10.3762/bjnano.9.38

• dissociations induced via electron impact excitation [23] can be as important as DEA. Copper is an important material commonly used in the advanced metallization of microelectronic and optoelectronic devices and ultralarge-scale integrated (ULSI) circuits due to its low electrical resistivity, high stress

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• singular switching events [23]. Ceramics Titanium and tungsten nitride ceramics: Titanium nitride (TiN) has a low electrical resistivity that is comparable to some metals, high stiffness (Young’s modulus of 427–590 GPa) and high hardness, high melting temperature (2930 °C), high corrosion resistance [140

Synthesis and characterization of electrospun molybdenum dioxide–carbon nanofibers as sulfur matrix additives for rechargeable lithium–sulfur battery applications

• Ruiyuan Zhuang,
• Shanshan Yao,
• Maoxiang Jing,
• Xiangqian Shen,
• Jun Xiang,
• Tianbao Li,
• Kesong Xiao and
• Shibiao Qin

Beilstein J. Nanotechnol. 2018, 9, 262–270, doi:10.3762/bjnano.9.28

• . Molybdenum dioxide (MoO2) materials are particularly attractive among the transition-metal oxides due to their high melting point, high chemical stability and low electrical resistivity (190 S cm−1). This material has great potential for applications in several fields such as sensing, catalysis

A robust AFM-based method for locally measuring the elasticity of samples

• Alexandre Bubendorf,
• Stefan Walheim,
• Thomas Schimmel and
• Ernst Meyer

Beilstein J. Nanotechnol. 2018, 9, 1–10, doi:10.3762/bjnano.9.1

• dividing the cantilever spring constant by the cantilever optical sensitivity Sz. The optical sensitivity of value 229 nm·V−1 was determined by measuring a vertical deflection–distance curve on an n-type silicon(111) sample of electrical resistivity = 10 Ω·m and by taking the inverse of the slope. The two

In situ controlled rapid growth of novel high activity TiB₂/(TiB₂–TiN) hierarchical/heterostructured nanocomposites

• Jilin Wang,
• Hejie Liao,
• Yuchun Ji,
• Fei Long,
• Yunle Gu,
• Zhengguang Zou,
• Weimin Wang and
• Zhengyi Fu

Beilstein J. Nanotechnol. 2017, 8, 2116–2125, doi:10.3762/bjnano.8.211

• stability, as well as excellent electrical and thermal conductivity [4][5][6]. On the other hand, titanium nitride (TiN) has some attractive properties, such as high hardness, low electrical resistivity, excellent wear and corrosion resistance [1][2][7]. Therefore, it is expected that these unique

High-stress study of bioinspired multifunctional PEDOT:PSS/nanoclay nanocomposites using AFM, SEM and numerical simulation

• Alfredo J. Diaz,
• Hanaul Noh,
• Tobias Meier and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2017, 8, 2069–2082, doi:10.3762/bjnano.8.207

• expression σ = IL/VA (based on the definition of electrical resistivity and Ohm’s law), where I is the total current (sum of all pixels), L is the thickness of the film, V is the applied bias voltage and A is the scanned area (image size). The results are summarized in Figure 1b. Each point represents the