Recent progress on field-effect transistor-based biosensors: device perspective

• Billel Smaani,
• Fares Nafa,
• Mohamed Salah Benlatrech,
• Ismahan Mahdi,
• Hamza Akroum,
• Mohamed walid Azizi,
• Khaled Harrar and
• Sayan Kanungo

Beilstein J. Nanotechnol. 2024, 15, 977–994, doi:10.3762/bjnano.15.80

• -based biosensors. Therefore, this current article provides a comprehensive review of FET-based biosensor architectures. More specifically, apart from conventional MOSFET, the development of emerging non-CMOS devices including biosensors based on tunnel-field effect transistors (TFETs) and negative

• -capacitance field-effect transistors (NCFETs) has also been summarized. 1.2 Organization of this review This review is organized as follows: In the first section, we provide an introduction to FET-based biosensors, where we discuss biosensor technology and primary applications. The second section presents the

Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain

• Kalai Selvi Kanagarajan and
• Dhanalakshmi Krishnan Sadhasivan

Beilstein J. Nanotechnol. 2024, 15, 713–718, doi:10.3762/bjnano.15.59

• device. The lifetime of devices is reduced because of leakage currents [1]. Leakage increases when thin SiO2 is used as gate dielectric material. The subthreshold swing (SS) is 60 mV/dec for the thermionic injection of electrons in field-effect transistors (FETs) [2]. In practical implementations, the SS

• is greater. Thermionic emission affects the off-to-on transition. A small subthreshold swing is needed to turn the device to an off-state sharply, once Vgs drops below the threshold voltage (VT). Tunnel field-effect transistors (TFETs) work based on band-to-band tunneling and not on conventional

Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques

• Annamarija Trausa,
• Sven Oras,
• Sergei Vlassov,
• Mikk Antsov,
• Tauno Tiirats,
• Andreas Kyritsakis,
• Boris Polyakov and
• Edgars Butanovs

Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58

• of the elastic modulus is essential for designing Ga2O3-based nanomechanical resonators or flexible field-effect transistors [13]. However, a minimal amount of research has been dedicated to exploring and understanding the mechanical properties of Ga2O3 NWs [14]. There are several methods available

Carbon nanotube-cellulose ink for rapid solvent identification

• Tiago Amarante,
• Thiago H. R. Cunha,
• Claudio Laudares,
• Ana P. M. Barboza,
• Ana Carolina dos Santos,
• Cíntia L. Pereira,
• Vinicius Ornelas,
• Bernardo R. A. Neves,
• André S. Ferlauto and
• Rodrigo G. Lacerda

Beilstein J. Nanotechnol. 2023, 14, 535–543, doi:10.3762/bjnano.14.44

• and other 1D/2D materials have been employed as ink components with great potential for a broad range of applications, for example, in flexible electronics, photoconductors, transparent conductors, and gas sensors [44][45][46][47]. Carbon nanotube ink films have been reported as field-effect

• transistors, transparent conductors, gas sensors, supercapacitors, and pH sensors [41][42][47][48][49][50][51][52][53][54][55]. Different approaches to ink printing methods have been explored, such as aerosol jet, inkjet, syringe, roll-to-roll printing, and stamp methods [1][41][50]. In this work, we report a

High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• the physical properties of semiconductors, information on semiconductor interface states is particularly important. For example, in semiconductor devices such as field-effect transistors, the presence of semiconductor interface states is known to significantly affect device operation characteristics

Enhanced electronic transport properties of Te roll-like nanostructures

• E. R. Viana,
• N. Cifuentes and
• J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

• work, the electronic transport properties of Te roll-like nanostructures were investigated in a broad temperature range by fabricating single-nanostructure back-gated field-effect-transistors via photolithography. These one-dimensional nanostructures, with a unique roll-like morphology, were produced

• electrical properties of these nanostructures, with a small disorder, and superior quality for nanodevice applications. Keywords: electrical characterization; field-effect transistors; hopping conduction; nanobelts; tellurium; Introduction The chalcogen tellurium (Te) is a rare element (0.002 ppm) in the

• devices, radioactive cooling devices, field-effect transistors, infrared acousto-optic deflectors, and even for antifungal activity [1][2][3][4][5][6][7]. Several chemical and physical methods have been recently developed to synthesize Te-based nanostructures, such as monolayers (MLs), nanoparticles (NPs

DNA aptamer selection and construction of an aptasensor based on graphene FETs for Zika virus NS1 protein detection

• Nathalie B. F. Almeida,
• Thiago A. S. L. Sousa,
• Viviane C. F. Santos,
• Camila M. S. Lacerda,
• Thais G. Silva,
• Rafaella F. Q. Grenfell,
• Flavio Plentz and
• Antero S. R. Andrade

Beilstein J. Nanotechnol. 2022, 13, 873–881, doi:10.3762/bjnano.13.78

• number BR1020210252790), exhibits high binding affinity to NS1 with a Kd value in the nanomolar range. Also, this ligand showed a higher specificity for ZIKV than for DENV and YFV. Furthermore, we functionalized multiple graphene field-effect transistors with ZIKV60 to demonstrate, by electrical

• characterization utilizing field-effect transistors fabricated using single-layer graphene grown by chemical vapor deposition (CVD) and transferred to Si/SiO2 substrates. The wafers were purchased from Graphene Platform and we produced graphene transistors by conventional photolithography, following the procedures

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• electrolyte-gated graphene field-effect transistors operating as biosensors. On average, the transistor channel resistance decreased from 1860 to 690 Ω when using the optimized PMMA. Even more importantly, the vast majority of these resistance values are distributed within a narrow range (only ca. 300 Ω wide

• process in the mass fabrication of arrays of receded-gate graphene field-effect transistors for biosensing applications. Results and Discussion We transferred graphene by using PMMA with two AMWs (15k and 550k), which were dissolved in anisole at two weight ratios (2 and 4 wt %). PMMA with 950,000 (950k

• electrolyte-gated graphene field-effect transistors (GFETs, Figure 5) designed to operate as DNA biosensors. Two batches of GFETs having a topmost graphene channel (75 µm width × 25 µm length) were fabricated (see details in Supporting Information File 1). In the first batch [37][38] (including 1755 GFETs

Revealing local structural properties of an atomically thin MoSe₂ surface using optical microscopy

• Lin Pan,
• Peng Miao,
• Anke Horneber,
• Alfred J. Meixner,
• Pierre-Michel Adam and
• Dai Zhang

Beilstein J. Nanotechnol. 2022, 13, 572–581, doi:10.3762/bjnano.13.49

• fascinating optical and electronic properties [1]. In particular, the optical absorption, direct bandgap, and broken inversion symmetry of 2D transition-metal dichalcogenide (2D-TMDC) monolayers make these materials promising candidates for light-emitting diodes, photodetectors, field-effect transistors

Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

• Hiroya Tanaka,
• Shinya Ohno,
• Kazushi Miki and
• Masatoshi Tanaka

Beilstein J. Nanotechnol. 2022, 13, 172–181, doi:10.3762/bjnano.13.12

• three-dimensional metal oxide semiconductor field-effect transistors (MOSFETs) [1]. Here, formation processes of ultrathin SiO2 at the interface are considered to be quite important in determining its dielectric properties. To study procedures to fabricate gate dielectrics, it will be necessary to

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• study, field-effect transistors based on monolayer MoS2 were irradiated with helium ions over the transistor channel and the effect of varying the size and position of the irradiated area on the electrical performance of the device was characterized [28]. Complimentary work on few-layer WSe2 by Stanford

Nanoporous and nonporous conjugated donor–acceptor polymer semiconductors for photocatalytic hydrogen production

• Zhao-Qi Sheng,
• Yu-Qin Xing,
• Yan Chen,
• Guang Zhang,
• Shi-Yong Liu and
• Long Chen

Beilstein J. Nanotechnol. 2021, 12, 607–623, doi:10.3762/bjnano.12.50

• (Figure 1) by selectively tuning the donor and acceptor parts within the conjugated backbones [39][40]. The D–A architecture has been widely employed in high-performance organic optoelectronic devices, such as organic photovoltaics, organic field-effect transistors, nonlinear optics, and organic light

• moiety as a strong electron-withdrawing group, has been widely used to design organic semiconductors for diverse applications, such as organic solar cells [85], organic light-emitting diodes [86], and organic field-effect transistors [87]. Researchers have also incorporated cyano moieties into the design

Interface interaction of transition metal phthalocyanines with strontium titanate (100)

• Reimer Karstens,
• Thomas Chassé and
• Heiko Peisert

Beilstein J. Nanotechnol. 2021, 12, 485–496, doi:10.3762/bjnano.12.39

• cells, field-effect transistors (FETs), and sensors [1][2]. Possibly, one of the most extensively studied oxide material in this context is rutile titanium dioxide [3]. However, also interfaces between SrTiO3 (STO) and organic molecules are studied increasingly using both experimental [4][5] and

Paper-based triboelectric nanogenerators and their applications: a review

• Jing Han,
• Nuo Xu,
• Yuchen Liang,
• Mei Ding,
• Junyi Zhai,
• Qijun Sun and
• Zhong Lin Wang

Beilstein J. Nanotechnol. 2021, 12, 151–171, doi:10.3762/bjnano.12.12

• , respectively. Screen printing has been widely used for fabricating conductive electrodes, semiconducting layers of solar cells, and active materials in field-effect transistors (FETs). It is commonly used as a planar printing technique for batch processing. It is also further adaptable to a roll-to-roll

Kondo effects in small-bandgap carbon nanotube quantum dots

• Patryk Florków,
• Damian Krychowski and
• Stanisław Lipiński

Beilstein J. Nanotechnol. 2020, 11, 1873–1890, doi:10.3762/bjnano.11.169

• , mechanical, and magnetic properties carbon nanotubes (CNTs) are of great interest in molecular electronics and spintronics with potential applications, for example, as field-effect transistors, nanoelectromechanical devices, logic gates, spin valves, spin diodes, and spin batteries [1][2][3][4][5][6][7][8][9

Direct observation of the Si(110)-(16×2) surface reconstruction by atomic force microscopy

• Tatsuya Yamamoto,
• Ryo Izumi,
• Kazushi Miki,
• Takahiro Yamasaki,
• Yasuhiro Sugawara and
• Yan Jun Li

Beilstein J. Nanotechnol. 2020, 11, 1750–1756, doi:10.3762/bjnano.11.157

• high-performance metal–oxide–semiconductor field-effect transistors (p-MOSFETs) [1][2] because the hole mobility of Si(110) is twice that of the other Si planes [3]. For surface science research, Si(110) has been used as a template substrate for self-assembled nanowires [4][5][6], nanomeshes [7], and

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• metal–insulator–semiconductor or metal–insulator–metal capacitors with a high effective area on a small footprint. The high surface area of a silicon nanowire array can be used to fabricate ion-sensitive field-effect transistors (ISFETs) with a high signal-to-noise ratio. An ISFET is a pH sensing

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• materials are, therefore, promising for gate-all-around architectures [16][17], which are very attractive for future low-power field-effect transistors (FETs) [18] and thermoelectrics [19][20][21]. The formation of nanodroplets leads to various outcomes, depending on the combination of substrate and droplet

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• study of the electrical performance of chemically synthesized monolayer molybdenum disulfide (MoS2) field-effect transistors irradiated with a focused helium ion beam as a function of increasing areal irradiation coverage. We determine an optimal coverage range of approx. 10%, which allows for the

• demonstrated impressive on/off ratios (approx. 107) in field-effect transistors (FETs), while maintaining carrier mobilities that may be adequate for commercial applications [1][2]. At the same time, advances in chemical vapor deposition (CVD) techniques have allowed for the reliable millimeter-scale synthesis

Scanning tunneling microscopy and spectroscopy of rubrene on clean and graphene-covered metal surfaces

• Karl Rothe,
• Alexander Mehler,
• Nicolas Néel and
• Jörg Kröger

Beilstein J. Nanotechnol. 2020, 11, 1157–1167, doi:10.3762/bjnano.11.100

• in importance for its suitability in light-emitting diodes [16] and organic field-effect transistors [17]. As substrate surfaces, Pt(111) and Au(111) were chosen for their different electronic structure around the Fermi level. Pt(111) exhibits a high density of d states close to the Fermi energy (EF

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• serving as multifunctional platforms for field-effect transistors [4][5][6], photovoltaic devices [7][8][9][10] and miniaturized chemical sensors [5][11][12]. A key element for many of those devices are high-quality nanometer-scale semiconductor junctions, such as pn-junctions that ensure the intended

Gas-sensing features of nanostructured tellurium thin films

• Dumitru Tsiulyanu

Beilstein J. Nanotechnol. 2020, 11, 1010–1018, doi:10.3762/bjnano.11.85

• films; Introduction Tellurium (Te) is a multifunctional chemical element used for the development of many devices, such as diodes with high (106) rectification ratios, thin-film field-effect transistors, optical recording media, infrared and UV detectors, strain-sensitive devices and others (see [1][2

Implementation of data-cube pump–probe KPFM on organic solar cells

• Benjamin Grévin,
• Olivier Bardagot and
• Renaud Demadrille

Beilstein J. Nanotechnol. 2020, 11, 323–337, doi:10.3762/bjnano.11.24

• the charge dynamics in organic field effect transistors (OFETs) at a µs temporal resolution [23]. For that purpose, they recorded successive images of the SP in the active channel of an OFET device, each of them being acquired at a different delay between the probe and a voltage pulse applied to the

Advanced hybrid nanomaterials

• Andreas Taubert,
• Fabrice Leroux,
• Pierre Rabu and
• Verónica de Zea Bermudez

Beilstein J. Nanotechnol. 2019, 10, 2563–2567, doi:10.3762/bjnano.10.247

• as insulating gates in organic field-effect transistors (OFETs). Optical properties are the focus in “Ceria/polymer nanocontainers for high-performance encapsulation of fluorophores” [30]. Here, an organic/inorganic system is based on a liquid core containing a fluorophore (terrylene diimide) within

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• of charge carriers has been observed in field-effect transistors (FET) made from this compound [32]. Anthracene-2-thiol, obtained by functionalization of anthracene with a thiol group, was used to fabricate SAMs on the top of Au bottom electrodes, which resulted in a beneficial effect on the