Focused ion and electron beams for synthesis and characterization of nanomaterials

• Aleksandra Szkudlarek

Beilstein J. Nanotechnol. 2025, 16, 613–616, doi:10.3762/bjnano.16.47

• Aleksandra Szkudlarek Academic Centre for Materials and Nanotechnology, AGH University of Krakow, av. Mickiewicza 30, 30-059, Krakow, Poland 10.3762/bjnano.16.47 Keywords: deposition; etching; focused electron beams; focused ion beams; lithography; milling; nanofabrication; 3D nanostructures; It

Electron beam-based direct writing of nanostructures using a palladium β-ketoesterate complex

• Chinmai Sai Jureddy,
• Krzysztof Maćkosz,
• Aleksandra Butrymowicz-Kubiak,
• Iwona B. Szymańska,
• Patrik Hoffmann and
• Ivo Utke

Beilstein J. Nanotechnol. 2025, 16, 530–539, doi:10.3762/bjnano.16.41

• promising precursor for nanoprinting 3D structures with finely focused electron beams. Keywords: 3D nanoprinting; electron-induced molecule dissociation; focused electron beam-induced deposition; metal nanostructures; metalorganic complexes; Introduction Direct fabrication of nanostructures without the

Direct electron beam writing of silver using a β-diketonate precursor: first insights

• Katja Höflich,
• Krzysztof Maćkosz,
• Chinmai S. Jureddy,
• Aleksei Tsarapkin and
• Ivo Utke

Beilstein J. Nanotechnol. 2024, 15, 1117–1124, doi:10.3762/bjnano.15.90

• injection systems used in any standard scanning electron microscope. Growth of smooth 3D geometries could be demonstrated for tightly focused electron beams, albeit with low silver content in the deposit volume. The electron beam-induced deposition proved sensitive to the irradiation conditions, leading to

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• high resolution achievable by the use of focused electron beams but also in their inherent ease of use and flexibility when compared to conventional lithographic techniques. A variety of materials can be deposited or etched by the use of different precursors [47] and the method requires no resist or

• [88] when SiO2 and Si3N4 substrates were etched by electrons in the presence of XeF2 gas, whereas no etching was observed in the presence of either electrons or gas molecules alone. Since then, several reports and applications of gas-assisted etching using focused electron beams have appeared in the

Chemistry for electron-induced nanofabrication

• Petra Swiderek,
• Hubertus Marbach and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2018, 9, 1317–1320, doi:10.3762/bjnano.9.124

• -induced chemistry of volatile precursor molecules is central to a novel class of gas-assisted nanolithographic techniques, subsumed as focused electron beam induced processing (FEBIP) [1][2]. FEBIP has emerged with the availability of extremely narrow focused electron beams in electron microscopy. These

Fixation mechanisms of nanoparticles on substrates by electron beam irradiation

• Daichi Morioka,
• Tomohiro Nose,
• Taiki Chikuta,
• Kazutaka Mitsuishi and
• Masayuki Shimojo

Beilstein J. Nanotechnol. 2017, 8, 1523–1529, doi:10.3762/bjnano.8.153

• -1 Sengen, Tsukuba, 305-0047, Japan 10.3762/bjnano.8.153 Abstract For applications such as the fabrication of plasmonic waveguides we developed a patterning technique to fabricate an array of nanoparticles on a substrate using focused electron beams (Noriki, T.; Abe, S.;.Kajikawa, K.; Shimojo, M

Ion beam profiling from the interaction with a freestanding 2D layer

• Ivan Shorubalko,
• Kyoungjun Choi,
• Michael Stiefel and
• Hyung Gyu Park

Beilstein J. Nanotechnol. 2017, 8, 682–687, doi:10.3762/bjnano.8.73

• signal change (typically the amount of generated secondary electrons) when the beam is scanned over a very sharp sample edge. This method is called rise-distance or sharp-edge (knife-edge) scan method and has been adopted historically from a profiling technique of focused electron beams [2]. For the

Continuum models of focused electron beam induced processing

• Milos Toth,
• Charlene Lobo,
• Vinzenz Friedli,
• Aleksandra Szkudlarek and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1518–1540, doi:10.3762/bjnano.6.157

• which t = 0 represents the time at which the electron flux is turned on): Electron flux profile Spatially-resolved FEBIP models require specification of the electron flux profile f(r). Focused electron beams are usually approximated by a Gaussian function: where Ω is the standard deviation (i.e., full

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

• opens a route for depositing pure Cu nanodot patterns using highly focused electron beams. Sketch of post-growth annealing experiments: a) conventional heating using a hot plate in an SEM, b) SEM integrated laser heating; the substrate is heated by the IR laser pulses, c) post-growth thermal annealing

Radiation-induced nanostructures: Formation processes and applications

• Michael Huth

Beilstein J. Nanotechnol. 2012, 3, 533–534, doi:10.3762/bjnano.3.61

• , or in the form of focused electron beams following a maskless approach for pattern definition in a radiation-sensitive resist, also commonly known as electron beam lithography. Examples of this are found in this Thematic Series covering the topics of selected-area silicon nanowire growth by the vapor