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Search for "rapid thermal annealing" in Full Text gives 15 result(s) in Beilstein Journal of Nanotechnology.

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

  • Monika Ozga,
  • Eunika Zielony,
  • Aleksandra Wierzbicka,
  • Anna Wolska,
  • Marcin Klepka,
  • Marek Godlewski,
  • Bogdan J. Kowalski and
  • Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

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  • and Technology, Wybrzeze Wyspiańskiego 27, 50–370 Wroclaw, Poland 10.3762/bjnano.15.62 Abstract This paper presents an investigation into the influence of repeating cycles of hydrothermal growth processes and rapid thermal annealing (HT+RTA) on the properties of CuO thin films. An innovative
  • devices. Keywords: CuO; hydrothermal method; rapid thermal annealing; thin films; Introduction Copper(II) oxide is a p-type semiconductor possessing a narrow bandgap, along with many beneficial electrical, optical, and magnetic properties. Particularly at the nanoscale, these properties set themselves
  • films, their properties were modified by thermal post-processing. The resultant procedure of sequential hydrothermal processes and rapid thermal annealing (HT+RTA) allows for the control of the physical properties of CuO films. Experimental Sample preparation The analyzed films were fabricated on n-type
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Published 24 Jun 2024

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

  • Aliyu Kabiru Isiyaku,
  • Ahmad Hadi Ali and
  • Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

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  • 200 °C [29]. Rapid thermal annealing of ITO/Ag/ITO films by Joeng et al. [28] led to an improvement in transmittance for films annealed at 300 °C. The lowest sheet resistance and resistivity values were obtained after annealing at 500 °C, but with reduced optical transmittance. Also, a durability test
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Published 27 Apr 2020

Fabrication and characterization of Si1−xGex nanocrystals in as-grown and annealed structures: a comparative study

  • Muhammad Taha Sultan,
  • Adrian Valentin Maraloiu,
  • Ionel Stavarache,
  • Jón Tómas Gudmundsson,
  • Andrei Manolescu,
  • Valentin Serban Teodorescu,
  • Magdalena Lidia Ciurea and
  • Halldór Gudfinnur Svavarsson

Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182

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  • impulse magnetron sputtering (HiPIMS). The as-grown structures subsequently underwent rapid thermal annealing (550–900 °C for 1 min) in N2 ambient atmosphere. The structures were investigated using X-ray diffraction, high-resolution transmission electron microscopy together with spectral photocurrent
  • thermal annealing is carried out over earlier investigated structures [22], where the use of HiPIMS to obtain Si1−xGex NCs in as-grown samples is demonstrated. Upon rapid thermal annealing, periodically arranged columnar self-assembled SiGe NCs are obtained. The NCs are characterized using grazing
  • HiPIMS and dcMS followed by rapid thermal annealing (1 min) at different temperatures. It is shown that HiPIMS deposition facilitates the formation of small nanoparticles/clusters in the as-grown structures. A suitable selection of annealing temperature and time results in the columnar self-assembly of
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Published 17 Sep 2019

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

  • Petronela Prepelita,
  • Ionel Stavarache,
  • Doina Craciun,
  • Florin Garoi,
  • Catalin Negrila,
  • Beatrice Gabriela Sbarcea and
  • Valentin Craciun

Beilstein J. Nanotechnol. 2019, 10, 1511–1522, doi:10.3762/bjnano.10.149

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  • , P.O. Box MG-7, Magurele 077125, Ilfov, Romania ICPE-CA, Splaiul Unirii 313, Sector 3, 74204, Bucharest, Romania Dentix MILLENNIUM SRL, Sabareni-Ilfov, Romania 10.3762/bjnano.10.149 Abstract In this work, rapid thermal annealing (RTA) was applied to indium tin oxide (ITO) films in ambient atmosphere
  • treatment in an open atmosphere. Such films could be used to manufacture transparent contact electrodes for solar cells. Keywords: conductive transparent electrodes; indium tin oxide (ITO) films; optical properties; radio-frequency magnetron sputtering (rfMS); rapid thermal annealing (RTA); Introduction
  • desired structure. In this paper, the influence of rapid thermal annealing (RTA) on the structure and optical properties of ITO films, obtained by rfMS, are reported. We conducted studies to optimize the deposition parameters in order to obtain ITO thin films with excellent properties. The main
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Published 25 Jul 2019

Development of an anti-pollution coating process technology for the application of an on-site PV module

  • Sejin Jung,
  • Wonseok Choi,
  • Jung Hyun Kim and
  • Jang Myoun Ko

Beilstein J. Nanotechnol. 2019, 10, 332–336, doi:10.3762/bjnano.10.32

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  • annealing treatments were applied to PV module glasses, i.e., furnace, rapid thermal annealing (RTA) and torch. Among these, torch annealing, which can be easily carried out at PV module installation sites, was applied to PV module glasses using different numbers of repetition. Light transmittance, contact
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Published 01 Feb 2019

Site-controlled formation of single Si nanocrystals in a buried SiO2 matrix using ion beam mixing

  • Xiaomo Xu,
  • Thomas Prüfer,
  • Daniel Wolf,
  • Hans-Jürgen Engelmann,
  • Lothar Bischoff,
  • René Hübner,
  • Karl-Heinz Heinig,
  • Wolfhard Möller,
  • Stefan Facsko,
  • Johannes von Borany and
  • Gregor Hlawacek

Beilstein J. Nanotechnol. 2018, 9, 2883–2892, doi:10.3762/bjnano.9.267

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  • budget during the rapid thermal annealing (RTA) process (see text). The color coding of the points in (f) corresponds to the measured Si NC size. The white area in the center is a guide to the eye indicating the parameter space favorable for Si NC formation. Figure (e) corresponds to the best combination
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Published 16 Nov 2018

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

  • Noel Kennedy,
  • Ray Duffy,
  • Luke Eaton,
  • Dan O’Connell,
  • Scott Monaghan,
  • Shane Garvey,
  • James Connolly,
  • Chris Hatem,
  • Justin D. Holmes and
  • Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

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  • connected to a condenser that enabled reflux conditions during the 3 h heating period. Capping and annealing A 50 nm SiO2 capping layer was sputtered on all samples prior to thermal treatments. Rapid thermal annealing was carried out allowing for temperatures greater than 1000 °C for time periods of less
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Published 06 Aug 2018

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers

  • Richard Daubriac,
  • Emmanuel Scheid,
  • Hiba Rizk,
  • Richard Monflier,
  • Sylvain Joblot,
  • Rémi Beneyton,
  • Pablo Acosta Alba,
  • Sébastien Kerdilès and
  • Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

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  • nanowire diameters of about 10 nm, a dopant deactivation is observed due to the dielectrical mismatch between the silicon and its surroundings. However, our previous investigations on 5 nm thick SiGeOI layers doped by ion implantation and activated by conventional rapid thermal annealing (RTA) [39][40
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Published 05 Jul 2018

Light extraction efficiency enhancement of flip-chip blue light-emitting diodes by anodic aluminum oxide

  • Yi-Ru Huang,
  • Yao-Ching Chiu,
  • Kuan-Chieh Huang,
  • Shao-Ying Ting,
  • Po-Jui Chiang,
  • Chih-Ming Lai,
  • Chun-Ping Jen,
  • Snow H. Tseng and
  • Hsiang-Chen Wang

Beilstein J. Nanotechnol. 2018, 9, 1602–1612, doi:10.3762/bjnano.9.152

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  • traditional LED by producing a TiO2 microstructure array on p-GaN through dipping and rapid convective deposition and using noncrystalline TiO2 and anatase TiO2 with a diameter of 520 nm [13]. Huang et al. used Zn and Mg for ion implantation at the GZO thin layer and then adopted rapid thermal annealing to
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Published 30 May 2018

Nanoporous silicon nitride-based membranes of controlled pore size, shape and areal density: Fabrication as well as electrophoretic and molecular filtering characterization

  • Axel Seidenstücker,
  • Stefan Beirle,
  • Fabian Enderle,
  • Paul Ziemann,
  • Othmar Marti and
  • Alfred Plettl

Beilstein J. Nanotechnol. 2018, 9, 1390–1398, doi:10.3762/bjnano.9.131

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  • silicon dioxide layers during rapid thermal annealing [13]. This fabrication offers the advantage of full compatibility to semiconductor fabrication techniques. While pore distance and pore size can be controlled within acceptable limits, the generated pores are random in position and the membrane
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Published 09 May 2018

Role of oxygen in wetting of copper nanoparticles on silicon surfaces at elevated temperature

  • Tapas Ghosh and
  • Biswarup Satpati

Beilstein J. Nanotechnol. 2017, 8, 425–433, doi:10.3762/bjnano.8.45

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  • rapid thermal annealing has been performed under various atmospheric conditions. In spite of the general tendency of the agglomeration of nanoparticles to lower the surface energy at elevated temperatures, our plan-view and cross-sectional transmission electron microscopy (TEM), energy dispersive X-ray
  • synthesized following different processes such as hydrothermal, chemical precipitation, electrochemical as well as other methods [4][5][6][7][13]. In this context the combination of the galvanic displacement reaction and the rapid thermal annealing process provides a simple and quick route for the synthesis
  • the high-angle annular dark-field scanning transmission electron microscopy (STEM-HAADF). After the TEM analysis, the same samples were transferred to a rapid thermal annealing unit (model: JETFIRST100 jipelec) and annealing was performed in air, oxygen and nitrogen atmospheres, one by one. The rapid
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Published 13 Feb 2017

The Kirkendall effect and nanoscience: hollow nanospheres and nanotubes

  • Abdel-Aziz El Mel,
  • Ryusuke Nakamura and
  • Carla Bittencourt

Beilstein J. Nanotechnol. 2015, 6, 1348–1361, doi:10.3762/bjnano.6.139

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  • -diffusion rate of the metal ions. To create metal oxide nanotubes, two different annealing approaches can be used: (i) rapid thermal annealing [65] and (ii) gradient thermal annealing [66]. In general, the first approach is preferred over the second since the annealing time for a fixed temperature can be
  • observation with SEM. Scale bar: 1 μm. Figure adapted with permission from [63], copyright 2013 Wiley-VCH. Representations of the different morphologies that can be obtained by thermal oxidation of nickel nanowires at different annealing temperatures and times. Two regimes are considered: (a) rapid thermal
  • annealing and (b) ramp annealing. In the case of ramp annealing, the nanostructures in steps 1 to 3 are formed during the ramp up stage. The dashed lines in (b) represent the spike annealing temperature profiles. Figure adapted with permission from [66], copyright 2010 Wiley-VCH. TEM micrograph of (a) thick
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Published 18 Jun 2015

Simple approach for the fabrication of PEDOT-coated Si nanowires

  • Mingxuan Zhu,
  • Marielle Eyraud,
  • Judikael Le Rouzo,
  • Nadia Ait Ahmed,
  • Florence Boulc’h,
  • Claude Alfonso,
  • Philippe Knauth and
  • François Flory

Beilstein J. Nanotechnol. 2015, 6, 640–650, doi:10.3762/bjnano.6.65

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  • high cost. The combination of spin-on doping (SOD) and rapid thermal annealing (RTM) was also attempted to achieve a core–shell Si homojunction [13][14], but this method failed to precisely control the thickness of the shell. Core–shell, radial p–n junctions can also be realized by simply spin coating
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Published 04 Mar 2015

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

  • Jacques Perrin Toinin,
  • Alain Portavoce,
  • Khalid Hoummada,
  • Michaël Texier,
  • Maxime Bertoglio,
  • Sandrine Bernardini,
  • Marco Abbarchi and
  • Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

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  • Discussion 340 nm thick Ge layers were deposited on the native oxide layer of a silicon substrate at room temperature (RT), under high vacuum, by magnetron sputtering. Recrystallization was then performed by rapid thermal annealing at 600 °C under vacuum (P ≈ 3 × 10−5 mbar) and the Ge layer was implanted
  • on the native silicon oxide of a (001) silicon wafer by magnetron sputtering in a commercial set up with a deposition chamber exhibiting a base pressure of ≈10−8 mbar. The first thermal annealing executed after Ge deposition was performed in a commercial Jetfirst 600 Rapid Thermal Annealing furnace
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Published 30 Jan 2015

Review of nanostructured devices for thermoelectric applications

  • Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

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  • of a uniform Au film on a silicon surface, with a successive rapid thermal annealing (RTA), can be used for the fabrication of Au nanoparticles on large surfaces. Even if the nanoparticles have a random position and diameter, the average diameter and diameter dispersion can be partially controlled by
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Published 14 Aug 2014
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