The role of a tantalum interlayer in enhancing the properties of Fe₃O₄ thin films

• Hai Dang Ngo,
• Vo Doan Thanh Truong,
• Van Qui Le,
• Hoai Phuong Pham and
• Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

• study of analog resistive switching of Fe3O4-based cross-cell memristive devices [7][8][9][10]. Fe3O4 thin films can be grown by many processes, including molecular beam epitaxy, which is employed for depositing single crystal films, and pulsed laser deposition, which is utilized to achieve epitaxial

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• analysis of resistive switching properties observed in a Au/(Ti–Cu)Ox/TiAlV structure with a gradient distribution of Cu and Ti along the (Ti–Cu)Ox thin film thickness. Thin films were prepared via multisource reactive magnetron co-sputtering. The programmed profile of the pulse width modulation

• resistive switching behavior. Results of optical, X-ray, and ultraviolet photoelectron spectroscopy measurements allowed us to elaborate the scheme of the bandgap alignment of the prepared thin films with respect to the Au and TiAlV electrical contacts. Detailed structure and elemental profile

• investigations allowed us to conclude about the possible mechanism for the observed resistive switching mechanism. Keywords: gradient thin film; magnetron sputtering; memory effect; resistive switching; Introduction In recent years, significant development has been observed in design, simulation, manufacturing

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• exploration of nanometer-scale structural modifications of TMD devices [6][7][8]. The localized formation of defects by focused ion beam irradiation has been shown to induce unusual electronic properties in monolayer TMDs, such as pseudo-metallic phase transitions in MoS2 and WSe2 [9][10], resistive switching

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

• Botond Sánta,
• Dániel Molnár,
• Patrick Haiber,
• Agnes Gubicza,
• Edit Szilágyi,
• Zsolt Zolnai,
• András Halbritter and
• Miklós Csontos

Beilstein J. Nanotechnol. 2020, 11, 92–100, doi:10.3762/bjnano.11.9

• Nanometer-scale resistive switching devices operated in the metallic conductance regime offer ultimately scalable and widely reconfigurable hardware elements for novel in-memory and neuromorphic computing architectures. Moreover, they exhibit high operation speed at low power arising from the ease of the

• electric-field-driven redistribution of only a small amount of highly mobile ionic species upon resistive switching. We investigate the memristive behavior of a so-far less explored representative of this class, the Ag/AgI material system in a point contact arrangement established by the conducting PtIr

• tip of a scanning probe microscope. We demonstrate stable resistive switching duty cycles and investigate the dynamical aspects of non-volatile operation in detail. The high-speed switching capabilities are explored by a custom-designed microwave setup that enables time-resolved studies of subsequent

Kelvin probe force microscopy work function characterization of transition metal oxide crystals under ongoing reduction and oxidation

• Dominik Wrana,
• Karol Cieślik,
• Wojciech Belza,
• Christian Rodenbücher,
• Krzysztof Szot and
• Franciszek Krok

Beilstein J. Nanotechnol. 2019, 10, 1596–1607, doi:10.3762/bjnano.10.155

• [1], hydrogen production [2], resistive switching [3] and organic electronics [4][5] to so-called thermoelectric power generators [6]. The performance of all of the abovementioned applications is extremely sensitive to the work function (WF) of the active oxide layer. As a vast majority of

Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• and reduction of the power consumption. In this context, resistive switching memory chips emerge as promising candidates for developing new non-volatile memory modules. Manganites have received increasing interest as memristive material as they exhibit a remarkable switching response. Nevertheless

• technique. We have developed three different growth strategies with which we are able to tune the oxygen content and Mn oxidation state moving from an orthorhombic to a rhombohedral structure for the active LaMnO3+δ material. Furthermore, a good resistive switching response has been obtained for LaMnO3+δ

• -based devices fabricated using optimized growth strategies. Keywords: manganite; metal organic chemical vapour deposition (MOCVD); resistive switching; thin film; valence-change memory; Introduction Resistive switching (RS) denotes the phenomena occurring in capacitor-like heterostructures (metal

Synthesis of hafnium nanoparticles and hafnium nanoparticle films by gas condensation and energetic deposition

• Irini Michelakaki,
• Nikos Boukos,
• Dimitrios A. Dragatogiannis,
• Spyros Stathopoulos,
• Costas A. Charitidis and
• Dimitris Tsoukalas

Beilstein J. Nanotechnol. 2018, 9, 1868–1880, doi:10.3762/bjnano.9.179

• embedded into a metal-oxide layer, result in a completely new behavior of resistive switching compared with pristine metal-oxide layers, which is important for operation and understanding of nonvolatile resistive random-access memory (ReRAM) [20]. Furthermore except of size, shape and structure of NPs, a

Synthesis of graphene–transition metal oxide hybrid nanoparticles and their application in various fields

• Arpita Jana,
• Elke Scheer and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2017, 8, 688–714, doi:10.3762/bjnano.8.74

• + acts as a bridge, connecting GO sheets and introducing new energy levels along the electron transport pathway thereby opening up possible conduction channels [216]. Singh et al. reported a bipolar, resistive switching device incorporating a copper oxide and multilayer graphene hybrid where the

• electrical characteristics of CuO–graphene bilayer structure has been modified largely due to the electronic interaction at the hybrid interface. The O2 intake capacity of the multilayer graphene results in reversible bipolar resistive switching properties [217]. Zhou et al. prepared graphene-wrapped CuO

Copper atomic-scale transistors

• Fangqing Xie,
• Maryna N. Kavalenka,
• Moritz Röger,
• Daniel Albrecht,
• Hendrik Hölscher,
• Jürgen Leuthold and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2017, 8, 530–538, doi:10.3762/bjnano.8.57

• . Keywords: electrochemistry; encapsulation; metallic atomic-scale transistor; nanotechnology; photolithography; Introduction Enormous research efforts worldwide are aimed at finding new solutions and technologies to manufacturing electronic components "beyond the silicon age". Resistive switching is one of

• in solids [10][11][12][13][14][15][16][17]. But the performance of the solid resistive-switching three-terminal devices has to be improved in terms of switching rate, endurance and retention. This work focuses on developing a three-terminal resistive device that utilizes the electrochemical

• electrode. By changing the potential on the gate in a bipolar manner, the as-fabricated copper atomic-scale point contact is alternately dissolved and formed, resulting in resistive switching between the source and the drain. The sign and the magnitude of the voltage (Ubias) applied across these two

Overview of nanoscale NEXAFS performed with soft X-ray microscopes

• Peter Guttmann and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2015, 6, 595–604, doi:10.3762/bjnano.6.61

• capability to investigate cryogenic samples in the HZB-TXM, the electronic structure of individual hybrid colloid particles in their hydrated environment were analysed [63]. Here, the structural homogeneity of nanoparticles in the hybrid particle was examined. Nanoscale valence changes in resistive switching

The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

• César Moreno,
• Carmen Munuera,
• Xavier Obradors and
• Carmen Ocal

Beilstein J. Nanotechnol. 2012, 3, 722–730, doi:10.3762/bjnano.3.82

• effect, of nanoscale memristors, by a combination of contact C-SFM modes, which reveal the technique as an ideal tool for the research and development of memristive systems on a nanometre scale. Results and Discussion Resistive-switching procedure Conductive scanning force microscopy was used either to

• from the current profile taken at Vtip = −4 V and depicted in Figure 5d. Note that the I(x) measured on modifications made at Vwr = +2 and +3 V has considerably increased from that shown in Figure 5b (Vtip = −2 V). It is worth noting that as commented above the resistive switching is reversed for Ver

• resistive-switching effect to nanoscale devices. It is worth mentioning here that, by comparing Figure 5a and Figure 5f we can rule out any tip effects in I–V measurements due to tip contamination or coating wear. The nonmodified regions of the LSMO films serve as an in situ quality test of the tip