Search results

Search for "semiconductor" in Full Text gives 613 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Morphology and properties of pyrite nanoparticles obtained by pulsed laser ablation in liquid and thin films for photodetection

  • Akshana Parameswaran Sreekala,
  • Bindu Krishnan,
  • Rene Fabian Cienfuegos Pelaes,
  • David Avellaneda Avellaneda,
  • Josué Amílcar Aguilar-Martínez and
  • Sadasivan Shaji

Beilstein J. Nanotechnol. 2025, 16, 785–805, doi:10.3762/bjnano.16.60

Graphical Abstract
  • detectivity in the order of 106–108 Jones is attained. The FeS2/n-Si photodetector works in self-powered mode also in addition to the photoconductive mode. The results show the effective fabrication of nanostructured ultraviolet–visible–near infrared thin film photodetectors using semiconductor nanocolloids
  • Earth, including toxic heavy metals and metalloids, radionuclides, and organic pollutants [5]. In addition to the aforementioned advantages as a semiconductor, it has the potential to be used in various applications through its nanostructures created via pulsed laser ablation in liquid (PLAL) and thin
  • as indicators of surface recombination. Peter et al. have explained this mechanism in semiconductor photoanodes [63]. When light is turned on, an immediate photocurrent appears due to the rapid separation of electron–hole pairs in the space charge region. This initial response is followed by a decay
PDF
Album
Supp Info
Full Research Paper
Published 03 Jun 2025

Nanostructured materials characterized by scanning photoelectron spectromicroscopy

  • Matteo Amati,
  • Alexey S. Shkvarin,
  • Alexander I. Merentsov,
  • Alexander N. Titov,
  • María Taeño,
  • David Maestre,
  • Sarah R. McKibbin,
  • Zygmunt Milosz,
  • Ana Cremades,
  • Rainer Timm and
  • Luca Gregoratti

Beilstein J. Nanotechnol. 2025, 16, 700–710, doi:10.3762/bjnano.16.54

Graphical Abstract
  • ; operando; oxides; scanning photoelectron spectromicroscopy; semiconductor nanowires; transition metal dichalcogenides; XPS; Introduction Nanometer or micrometer-sized materials play a key role in modern technologies in the search of new routes for unforeseen performances generating breakthroughs in
  •  1i–k). Operando characterization of InP nanowire p–n junctions Semiconductor nanowires offer unprecedented possibilities in utilizing, combining, and modifying material properties for application in electronic, photonic, energy harvesting, or quantum information devices [15][16]. Their small
  • expensive III–V materials to the active device area. The flexible geometry of nanowires standing upright on their growth substrate directly leads to gate-all-around metal-oxide-semiconductor stacks [23][24], and advanced electronic device designs such as nanowire tunneling field-effect transistors [24] or
PDF
Album
Review
Published 23 May 2025

High-temperature epitaxial growth of tantalum nitride thin films on MgO: structural evolution and potential for SQUID applications

  • Michelle Cedillo Rosillo,
  • Oscar Contreras López,
  • Jesús Antonio Díaz,
  • Agustín Conde Gallardo and
  • Harvi A. Castillo Cuero

Beilstein J. Nanotechnol. 2025, 16, 690–699, doi:10.3762/bjnano.16.53

Graphical Abstract
  • nitride system TaNx can be an insulator, semiconductor, or superconductor and also can exhibit a variety of crystallographic phases [8][9]. For example, Nie and collaborators mentioned that Ta2N thin films presented a high-temperature coefficient of resistance, and resistors using this material as a
PDF
Album
Full Research Paper
Published 22 May 2025

The impact of tris(pentafluorophenyl)borane hole transport layer doping on interfacial charge extraction and recombination

  • Konstantinos Bidinakis and
  • Stefan A. L. Weber

Beilstein J. Nanotechnol. 2025, 16, 678–689, doi:10.3762/bjnano.16.52

Graphical Abstract
  • ]. For PTAA, under illumination, a similar mechanism is proposed, whereby the oxidation of PTAA raises the conductivity of the polymer [33]. For both HTLs, the inclusion of tBP promotes a better distribution of the HTL on the perovskite, preventing organic semiconductor/LiTFSI phase segregation [34
  • solubility in solvents orthogonal to the underlying perovskite active layer. Such an alternative compound is tris(pentafluorophenyl)borane (BCF), which is an electrophilic Lewis acid that interacts with the organic semiconductor and increases its conductivity. Here, we performed a dedicated study for the HTL
PDF
Album
Supp Info
Full Research Paper
Published 21 May 2025

Electron beam-based direct writing of nanostructures using a palladium β-ketoesterate complex

  • Chinmai Sai Jureddy,
  • Krzysztof Maćkosz,
  • Aleksandra Butrymowicz-Kubiak,
  • Iwona B. Szymańska,
  • Patrik Hoffmann and
  • Ivo Utke

Beilstein J. Nanotechnol. 2025, 16, 530–539, doi:10.3762/bjnano.16.41

Graphical Abstract
  • this study, we present a detailed analysis of the characteristics of deposits obtained using the new precursor bis(tert-butylacetoacetate)palladium(II), [Pd(tbaoac)2], a member of the β-ketoesterate complex group. Given the growing interest in carbon nanotubes (CNTs) and graphene for semiconductor
PDF
Album
Supp Info
Full Research Paper
Published 15 Apr 2025

Performance optimization of a microwave-coupled plasma-based ultralow-energy ECR ion source for silicon nanostructuring

  • Joy Mukherjee,
  • Safiul Alam Mollick,
  • Tanmoy Basu and
  • Tapobrata Som

Beilstein J. Nanotechnol. 2025, 16, 484–494, doi:10.3762/bjnano.16.37

Graphical Abstract
  • treatments such as nanopatterning, sputter etching, and controlled defect formation [6][7]. Particularly, ultralow-energy ion beams are exceptionally valuable for the precise modification of 2D layers [8] and ion-induced nanopatterning of semiconductor surfaces [9]. Over the past few decades, ion-induced
PDF
Album
Full Research Paper
Published 31 Mar 2025

Quantification of lead through rod-shaped silver-doped zinc oxide nanoparticles using an electrochemical approach

  • Ravinder Lamba,
  • Gaurav Bhanjana,
  • Neeraj Dilbaghi,
  • Vivek Gupta and
  • Sandeep Kumar

Beilstein J. Nanotechnol. 2025, 16, 422–434, doi:10.3762/bjnano.16.33

Graphical Abstract
  • activity, and semiconductor properties. By doping ZnO nanoparticles with transition metals, we can alter their electrical, optical, and magnetic properties by introducing new electronic states into the band structure. Herein, Ag is added to ZnO nanostructures to improve their optical properties to detect
  • employed as effective electron mediators [9]. Zinc oxide nanoparticles have gained a lot of attention due to their unique features, such as wide bandgap (approximately 3.37 eV), excellent electron transportation, piezoelectric behavior, semiconductor nature, low toxicity, and enhanced electrochemical
  • medicine, electronics, environmental remediation, and energy [10][11]. The use of certain metal dopants to modify the chemical, optical, and electrical features of a material has gained considerable interest in the realm of semiconductor technology. A recent study has conducted thorough investigations into
PDF
Album
Full Research Paper
Published 26 Mar 2025

Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

  • Kafi Devi,
  • Usha Rani,
  • Arun Kumar,
  • Divya Gupta and
  • Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

Graphical Abstract
  • II–VI semiconductor with a direct bandgap of 2.26 eV, which lies in the visible range of the electromagnetic spectrum. ZnTe is a p-type semiconductor because of zinc vacancies and has a low electron affinity of 3.53 eV at room temperature [5]. It exists in both zincblende and wurtzite structures
  • . The photoluminescence occurs when a material absorbs energy higher than its bandgap. In a semiconductor, this leads to the creation of a large number of electrons and holes in comparison to their equilibrium concentration. These generated charge carriers recombine after thermal relaxation, and photons
PDF
Album
Supp Info
Full Research Paper
Published 05 Mar 2025

Emerging strategies in the sustainable removal of antibiotics using semiconductor-based photocatalysts

  • Yunus Ahmed,
  • Keya Rani Dutta,
  • Parul Akhtar,
  • Md. Arif Hossen,
  • Md. Jahangir Alam,
  • Obaid A. Alharbi,
  • Hamad AlMohamadi and
  • Abdul Wahab Mohammad

Beilstein J. Nanotechnol. 2025, 16, 264–285, doi:10.3762/bjnano.16.21

Graphical Abstract
  • to human health and ecological balance, requiring immediate and novel intervention techniques. Regarding this, semiconductor-based photocatalysts have appeared as promising candidates, providing a sustainable and efficient way to remove antibiotics from aquatic ecosystems. Nanomaterials can
  • capacity to absorb light and concerns about catalytic stability, photocatalysis outperforms other advanced oxidation processes in multiple aspects. This study focuses on summarizing recent advances in the sustainable removal of antibiotics using semiconductor-based photocatalysts. By reviewing the latest
  • improve the performance and scalability for wider use in real-world situations. Keywords: antibiotics; degradation pathways; heterojunctions; mechanisms; photocatalysts; semiconductor; Introduction Antibiotics are chemical substances used to treat bacterial infections in humans, animals, aquaculture
PDF
Album
Review
Published 25 Feb 2025

Recent advances in photothermal nanomaterials for ophthalmic applications

  • Jiayuan Zhuang,
  • Linhui Jia,
  • Chenghao Li,
  • Rui Yang,
  • Jiapeng Wang,
  • Wen-an Wang,
  • Heng Zhou and
  • Xiangxia Luo

Beilstein J. Nanotechnol. 2025, 16, 195–215, doi:10.3762/bjnano.16.16

Graphical Abstract
  • , and inorganic semiconductor materials that absorb light through bandgap transitions [25]. The specific photothermal properties of these materials, encompassing aspects such as range and rate of light absorption, photothermal conversion efficiency, heat transfer capability, and photothermal stability
  • , including exceptional biocompatibility, biodegradability, wide availability, low cost, and a highly tunable structure, making them well-suited for such uses [67][68][69][70][71]. 2.3 Inorganic semiconductor materials Inorganic semiconductor materials, such as TiO2, SiO2, and Fe2O3, possess conductivity
  • photothermal conversion capabilities. For instance, titanium dioxide (TiO2) with a bandgap of 3.3 eV, which is transparent to visible light, primarily absorbs ultraviolet light, and common semiconductor materials are only weakly absorbent in the NIR range (Figure 2h) [78]. In comparison to LSPR metals and
PDF
Album
Review
Published 17 Feb 2025

Clays enhanced with niobium: potential in wastewater treatment and reuse as pigment with antibacterial activity

  • Silvia Jaerger,
  • Patricia Appelt,
  • Mario Antônio Alves da Cunha,
  • Fabián Ccahuana Ayma,
  • Ricardo Schneider,
  • Carla Bittencourt and
  • Fauze Jacó Anaissi

Beilstein J. Nanotechnol. 2025, 16, 141–154, doi:10.3762/bjnano.16.13

Graphical Abstract
  • residues from the original organic matter, thus avoiding the disposal of sludge [8]. This approach allows the removal of various organic pollutants, including textile dyes, using solid semiconductors (e.g., NbOPO4 and Nb2O5) and photons (with energy greater than the bandgap energy of the semiconductor) to
  • photocatalyst to treat MB dye solutions and reuse this material as a hybrid pigment. Considering the semiconductor properties of niobium and the high capacity of the clay to remove pollutants from wastewater, we proposed in this research to use the niobium-modified clay as an adsorbent and photocatalyst to
  • comparison obtained regarding the percentage of removal from adsorption and heterogeneous photocatalysis tests. The photocatalysis mechanism can be explained as follows: a semiconductor such as the BEPh and BEOx samples absorbs a photon, promoting an electron from the valence band (VB) to the conduction band
PDF
Album
Supp Info
Full Research Paper
Published 10 Feb 2025

TiO2 immobilized on 2D mordenite: effect of hydrolysis conditions on structural, textural, and optical characteristics of the nanocomposites

  • Marina G. Shelyapina,
  • Rosario Isidro Yocupicio-Gaxiola,
  • Gleb A. Valkovsky and
  • Vitalii Petranovskii

Beilstein J. Nanotechnol. 2025, 16, 128–140, doi:10.3762/bjnano.16.12

Graphical Abstract
  • studied nanocomposites transformed using Equation 6 with n = 2 (since TiO2 is an indirect bandgap semiconductor). Semiconductor materials are characterized by a steep linear increase in light absorption with increasing energy. The bandgap energy can be estimated from the point of intersection of the x
PDF
Album
Full Research Paper
Published 10 Feb 2025

Characterization of ZnO nanoparticles synthesized using probiotic Lactiplantibacillus plantarum GP258

  • Prashantkumar Siddappa Chakra,
  • Aishwarya Banakar,
  • Shriram Narayan Puranik,
  • Vishwas Kaveeshwar,
  • C. R. Ravikumar and
  • Devaraja Gayathri

Beilstein J. Nanotechnol. 2025, 16, 78–89, doi:10.3762/bjnano.16.8

Graphical Abstract
  • [16]. This peak, observed in the blue line of the spectrum, confirms the formation of ZnO NPs with semiconductor properties and highlights their high purity, which is proven by the lack of peaks that would indicate impurities. This data validates the successful synthesis of ZnO NPs with a clear
  • MB dye progressed with time and yielded 95% degradation under 120 min. The process involved in dye degradation is exciting electrons and generating holes in the semiconductor. The produced electrons form superoxide radicals (•O2−) by reacting with O2, while holes react with water (H2O) molecules to
PDF
Album
Full Research Paper
Published 30 Jan 2025

Theoretical study of the electronic and optical properties of a composite formed by the zeolite NaA and a magnetite cluster

  • Joel Antúnez-García,
  • Roberto Núñez-González,
  • Vitalii Petranovskii,
  • H’Linh Hmok,
  • Armando Reyes-Serrato,
  • Fabian N. Murrieta-Rico,
  • Mufei Xiao and
  • Jonathan Zamora

Beilstein J. Nanotechnol. 2025, 16, 44–53, doi:10.3762/bjnano.16.5

Graphical Abstract
  • that the composite exhibits magnetic properties of a half-semiconductor and a strong optical response within the visible and ultraviolet regions of the spectrum. Keywords: magnetic cluster; NaA zeolite; optical properties; Introduction Zeolites are crystalline materials made up of aluminosilicates
  • bandgap of 6.5 eV, along with additional bandgaps originating from states associated with the bands at 4.5 and 5.2 eV. In Figure 4b, the TDOS for the NaA-M composite is presented, clearly revealing the decoupling of the spin-up and spin-down states, resulting in a “half-semiconductor”-type magnetic
  • within the zeolite exhibits characteristics of a half-semiconductor in contrast to the free cluster in the vacuum, which presents ferromagnetic behavior. Moreover, the results suggest that introducing the cluster into zeolite enhances the control over the transition between spin polarizations, making it
PDF
Album
Full Research Paper
Published 17 Jan 2025

Heterogeneous reactions in a HFCVD reactor: simulation using a 2D model

  • Xochitl Aleyda Morán Martínez,
  • José Alberto Luna López,
  • Zaira Jocelyn Hernández Simón,
  • Gabriel Omar Mendoza Conde,
  • José Álvaro David Hernández de Luz and
  • Godofredo García Salgado

Beilstein J. Nanotechnol. 2024, 15, 1627–1638, doi:10.3762/bjnano.15.128

Graphical Abstract
  • ; chemical reactions; flow dynamics; HFCVD; hot filament chemical vapor deposition; SiOx films; Introduction The growth of materials such as non-stoichiometric silicon oxide (SiOx) is an important step in semiconductor devices development. Control of deposition parameters determines the success of the
  • because the input gases and materials are accessible; also, it is scalable to larger areas [6]. The SiOx films obtained by HFCVD possess excellent optical and electrical properties, which makes such films suitable for applications in the manufacture of metal–insulator–semiconductor and metal–insulator
PDF
Album
Full Research Paper
Published 17 Dec 2024

Strain-induced bandgap engineering in 2D ψ-graphene materials: a first-principles study

  • Kamal Kumar,
  • Nora H. de Leeuw,
  • Jost Adam and
  • Abhishek Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 1440–1452, doi:10.3762/bjnano.15.116

Graphical Abstract
  • atoms arranged in 5,6,7-membered rings. The half and fully hydrogenated (hydrogen-functionalized) forms of ψ-graphene are called ψ-graphone and ψ-graphane. Like ψ-graphene, ψ-graphone has a zero bandgap, but ψ-graphane is a wide-bandgap semiconductor. In this study, we have applied in-plane and out-of
  • are zero-bandgap, like goldene [15] and ψ-graphene [16]. The absence of bandgaps in 2D materials makes them unsuitable for conventional semiconductor applications and limits their use in photonics and optical devices [17]. Therefore, bandgap engineering (manipulation of electronic band structures
  • compatibility with established technologies (the semiconductor industry can adopt it to enhance the performance of devices) [28]. Strain can be introduced in graphene using different methods, namely, by exploiting a mismatch in thermal expansion between graphene and the underlying substrate, by transferring
PDF
Album
Supp Info
Full Research Paper
Published 20 Nov 2024

Ion-induced surface reactions and deposition from Pt(CO)2Cl2 and Pt(CO)2Br2

  • Mohammed K. Abdel-Rahman,
  • Patrick M. Eckhert,
  • Atul Chaudhary,
  • Johnathon M. Johnson,
  • Jo-Chi Yu,
  • Lisa McElwee-White and
  • D. Howard Fairbrother

Beilstein J. Nanotechnol. 2024, 15, 1427–1439, doi:10.3762/bjnano.15.115

Graphical Abstract
  • , deposition strategies in various applications, such as circuit editing and lithographic mask repair in the semiconductor industry [7][8][9][10][11][12] as well as the growth of functional materials for magnetism [13][14][15][16], superconductivity [17], and sensing [18][19]. Compared to FEBID, FIBID operates
PDF
Album
Supp Info
Full Research Paper
Published 19 Nov 2024

Lithium niobate on insulator: an emerging nanophotonic crystal for optimized light control

  • Midhun Murali,
  • Amit Banerjee and
  • Tanmoy Basu

Beilstein J. Nanotechnol. 2024, 15, 1415–1426, doi:10.3762/bjnano.15.114

Graphical Abstract
  • challenging due to its ultrafast nature. In 2022, Quach et al. presented an innovative model of a quantum battery [37]. This device comprises a DBR structure-based microcavity that encloses an organic semiconductor molecular dye, named Lumogen-Forange (LFO). The DBRs comprised 10 bilayers of SiO2/Nb2O5 in the
  • and driving coherent interactions with the organic semiconductor molecules. Secondly, enabling the measurement of the evolution of stored energy and the differential reflectivity induced by the pump pulse, which is essential for monitoring the charging dynamics at a femtosecond resolution. The
PDF
Album
Supp Info
Full Research Paper
Published 14 Nov 2024

Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

  • The-Long Phan,
  • Le Viet Cuong,
  • Vu Dinh Lam and
  • Ngoc Toan Dang

Beilstein J. Nanotechnol. 2024, 15, 1390–1399, doi:10.3762/bjnano.15.112

Graphical Abstract
  • electronic/optoelectronic devices, energy storage/generation systems, and renewable energy conversion devices with high performance and low-power consumption [1][2][3]. In comparison to semiconductors, ZnO has attracted much more attention. This is due to ZnO having outstanding semiconductor behaviours in
  • microcavities [9]. Additionally, it is a transparent semiconductor with significant piezoelectricity [10]. These noble characteristics suggest ZnO to be a potential material in the fabrication of UV/blue/green LEDs, solid-state random lasers, UV-absorption devices, and nanogenerators [9][11][12][13]. Magnetic
PDF
Album
Full Research Paper
Published 11 Nov 2024

Green synthesis of carbon dot structures from Rheum Ribes and Schottky diode fabrication

  • Muhammed Taha Durmus and
  • Ebru Bozkurt

Beilstein J. Nanotechnol. 2024, 15, 1369–1375, doi:10.3762/bjnano.15.110

Graphical Abstract
  • were calculated as 566 nm and 5.25 eV, respectively. The ideality factor and the measured barrier height (Φb) of the CDs-based Schottky diode were calculated as 9.1 and 0.364 eV, respectively. The CDs were used as semiconductor material in a Schottky diode, and the diode exhibited rectification
  • electrical current. There are many types of diodes, such as Zener diodes, crystal diodes, and Schottky diodes, and each type has different features and is used for different purposes. Schottky diodes contain a metal–semiconductor junction. This structure differs from other diodes because of its high
  • of demonstrating the applicability of CDs in the field of electronics, apart from sensor studies, which are common application areas, and in terms of introducing new semiconductor materials to the field of electronics. Experimental Materials Rheum ribes was purchased from the market, washed, and
PDF
Album
Full Research Paper
Published 07 Nov 2024

Out-of-plane polarization induces a picosecond photoresponse in rhombohedral stacked bilayer WSe2

  • Guixian Liu,
  • Yufan Wang,
  • Zhoujuan Xu,
  • Zhouxiaosong Zeng,
  • Lanyu Huang,
  • Cuihuan Ge and
  • Xiao Wang

Beilstein J. Nanotechnol. 2024, 15, 1362–1368, doi:10.3762/bjnano.15.109

Graphical Abstract
  • (TMDs) through twist misalignment [18][19], which brings about fascinating physical phenomena [25][26][27][28][29]. Stacking semiconductor vdW materials with suitable bandgaps at specific angles not only breaks OOP symmetry, but also combines excellent semiconductor properties with spontaneous
  • polarization, offering promising advances in optoelectronics [23][30]. One of the key optoelectronic phenomena in 2D semiconductor materials is the photocurrent response. The polarization, which results in spontaneous photocurrent under zero bias, gives rise to the bulk photovoltaic effect (BPVE), which can
  • ) at room temperature. The electrical properties of the devices were characterized using an Agilent B1500 semiconductor analyzer in a Lake Shore vacuum chamber (10−4 Pa). SPCM and TRPC measurement The photocurrent maps were all obtained under zero bias using a custom-built scanning photocurrent
PDF
Album
Supp Info
Full Research Paper
Published 06 Nov 2024

Mn-doped ZnO nanopowders prepared by sol–gel and microwave-assisted sol–gel methods and their photocatalytic properties

  • Cristina Maria Vlăduț,
  • Crina Anastasescu,
  • Silviu Preda,
  • Oana Catalina Mocioiu,
  • Simona Petrescu,
  • Jeanina Pandele-Cusu,
  • Dana Culita,
  • Veronica Bratan,
  • Ioan Balint and
  • Maria Zaharescu

Beilstein J. Nanotechnol. 2024, 15, 1283–1296, doi:10.3762/bjnano.15.104

Graphical Abstract
  • generated CO2 were measured for both catalysts. These inexpensive semiconductor materials, which proved to be light-responsive, can be further used for developing water depollution technologies based on solar light energy. Keywords: microwave-assisted synthesis; oxalic acid mineralization; semiconductor
  • semiconductor with many versatile and attractive applications in optical, optoelectronic, and photocatalytic fields [35][36][37]. The doping of ZnO with Mn can lead to the development of multifunctional nanostructures, such as room-temperature ferromagnetic materials with potential applications in spintronics
  • catalyst is generally associated with low photocatalytic activity. Accordingly, various modifiers of semiconductor nanomaterials are used to enhance separation of the photogenerated charges, causing a corresponding decrease of PL emission. The correlation between photoluminescence and photocatalytic
PDF
Album
Supp Info
Full Research Paper
Published 28 Oct 2024

Quantum-to-classical modeling of monolayer Ge2Se2 and its application in photovoltaic devices

  • Anup Shrivastava,
  • Shivani Saini,
  • Dolly Kumari,
  • Sanjai Singh and
  • Jost Adam

Beilstein J. Nanotechnol. 2024, 15, 1153–1169, doi:10.3762/bjnano.15.94

Graphical Abstract
  • . Figure 3 depicts that the monolayer Ge2Se2 is a direct-bandgap semiconductor with a bandgap of the order of 1.12 eV. Valence band maximum (VBM) and conduction band minimum (CBM) are located along the Γ-X path. The computed bandgap value and its dispersion nature are consistent with earlier reported works
  • , ELUMO is the LUMO energy level. The ionization potential is calculated as IP = EVac − EHOMO, where IP, EVac, and EHOMO are ionization potential, vacuum energy level, and HOMO energy level, respectively. The electron affinity at a semiconductor surface is defined as the energy needed to carry an electron
  • the proposed solar cell, we performed a numerical simulation using SCAPS-1D, which solves the fundamental semiconductor equations such as drift–diffusion, Poisson’s equation, and continuity equations as: and where and are the electron and hole current densities at the Fermi levels EFn and EFp
PDF
Album
Full Research Paper
Published 11 Sep 2024

Photocatalytic methane oxidation over a TiO2/SiNWs p–n junction catalyst at room temperature

  • Qui Thanh Hoai Ta,
  • Luan Minh Nguyen,
  • Ngoc Hoi Nguyen,
  • Phan Khanh Thinh Nguyen and
  • Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

Graphical Abstract
  • deposition on catalyst surfaces [4][5][6][7]. Therefore, sustainable strategies for both green conversion and atmospheric removal of CH4 are urgently necessary [8][9][10][11]. Semiconductor-based photocatalysis has been attracting scientists’ attention because of its environmental friendliness and easy
  • handling [12][13][14]. Photocatalytic metal oxide semiconductor materials have been utilized for converting solar energy into valuable chemical energy in the field of CH4 conversion [15][16][17]. Methane oxidation presents a particularly promising strategy. The primary objective is to convert methane into
  • valuable products such as formaldehyde (HCHO), methanol (CH3OH), and other value-added oxygenates, which serve as essential precursors in various manufacturing and production processes [18][19]. The n-type semiconductor titanium dioxide (TiO2) has been discovered as a potential photocatalyst material
PDF
Album
Supp Info
Full Research Paper
Published 02 Sep 2024

Unveiling the potential of alginate-based nanomaterials in sensing technology and smart delivery applications

  • Shakhzodjon Uzokboev,
  • Khojimukhammad Akhmadbekov,
  • Ra’no Nuritdinova,
  • Salah M. Tawfik and
  • Yong-Ill Lee

Beilstein J. Nanotechnol. 2024, 15, 1077–1104, doi:10.3762/bjnano.15.88

Graphical Abstract
PDF
Album
Review
Published 22 Aug 2024
Other Beilstein-Institut Open Science Activities