Photocatalytic methane oxidation over a TiO₂/SiNWs p–n junction catalyst at room temperature

• Qui Thanh Hoai Ta,
• Luan Minh Nguyen,
• Ngoc Hoi Nguyen,
• Phan Khanh Thinh Nguyen and
• Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

• recombination of charge carriers in semiconductors is a main drawback for photocatalytic oxidative coupling of methane (OCM) reactions. Herein, we propose a novel catalyst by developing a p–n junction titania–silicon nanowires (TiO2/SiNWs) heterostructure. The structure is fabricated by atomic layer deposition

Silver-based SERS substrates fabricated using a 3D printed microfluidic device

• Phommachith Sonexai,
• Minh Van Nguyen,
• Bui The Huy and
• Yong-Ill Lee

Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65

• ], porous aluminum oxide [38], and semiconductors [39] have been reported. Dielectric and semiconductor substrates, such as ZnO nanowires, silicon nanowires, and porous silicon (PS), are particularly popular because of their larger contribution to the amplification of the Raman signal and longer shelf life

Rapid and sensitive detection of box turtles using an electrochemical DNA biosensor based on a gold/graphene nanocomposite

• Abu Hashem,
• M. A. Motalib Hossain,
• Ab Rahman Marlinda,
• Mohammad Al Mamun,
• Khanom Simarani and
• Mohd Rafie Johan

Beilstein J. Nanotechnol. 2022, 13, 1458–1472, doi:10.3762/bjnano.13.120

• ssDNA recognition elements [31]. As per our observation, this is the first application of an electrochemical DNA biosensor for BT detection. Kusnin et al. [57] employed silicon nanowires/platinum nanoparticles (SiNWs/PtNPs) on a SPCE for the detection of porcine DNA. The few studies conducted earlier

Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• with a switching ratio of about 103. Qian et al. [37] produced a U-shaped NEM switch with two Si nanowires, which support a square capacitive plate to form a U-shaped removable electrode, as shown in Figure 5b. The length of the silicon nanowires is 5 µm, the cross section is 90 × 90 nm square, the

Morphology-driven gas sensing by fabricated fractals: A review

• Vishal Kamathe and
• Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• sections of free-standing crystalline silicon nanowires of 160 nm diameter to a series of target doses. It was found that a dramatic decrease in thermal conductivity occurred already at relatively low doses, corresponding to point defect concentrations of only a few percent. This result indicated a strong

Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

• Shaimaa Elyamny,
• Elisabetta Dimaggio and
• Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

• doping parameters. These results are in good agreement with numerical simulations of the doping process applied to silicon nanowires. These devices, based on doped nanowire forests, offer a possible route for the exploitation of the high power factor of silicon, which, combined with the very low thermal

• , energy storage (supercapacitors), and, in particular, thermoelectric applications [15][16][17]. There are two main requirements to the fabrication of a leg for a thermoelectric generator that is based on a large number of silicon nanowires perpendicular to a substrate: 1) Electrical contacts need to

• not possible to fabricate an optimized generator module based on two legs with opposite heavy doping. A possible solution is to dope the silicon nanowires by thermal diffusion [21], after their fabrication by MACE. In this work, we present the measurement of the Seebeck coefficient of SiNWs doped

Optically and electrically driven nanoantennas

• Monika Fleischer,
• Dai Zhang and
• Alfred J. Meixner

Beilstein J. Nanotechnol. 2020, 11, 1542–1545, doi:10.3762/bjnano.11.136

• revealing local structural properties is illustrated in [49], where crystalline and amorphous regions within core–shell silicon nanowires are discerned with an optical resolution of a few nanometers. This study further demonstrates that it is possible to combine polarization angle-resolved experiments with

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• Abstract The wafer-level integration of high aspect ratio silicon nanostructures is an essential part of the fabrication of nanodevices. Metal-assisted chemical etching (MACE) is a promising low-cost and high-volume technique for the generation of vertically aligned silicon nanowires. Noble metal

• platform and can be adapted to detect biomolecules [9]. Silicon nanowires are used as template for cancer sensors. The nanowires are implemented as gate in integrated sensing FETs [10][11]. A wide range of chemical sensors and biosensors benefit from porous silicon structures [12]. All these presented

• analysed by Fazio et al. [1]. It is mainly based on multiple light scattering at the silicon nanowires. Figure 4 shows SEM images of an etched wafer using Au nanoparticles as etching catalyst. This wafer has been etched with 50 mmol/L H2O2 for 10 min. The SEM images show cross sections of the wafer centre

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• , Germany 10.3762/bjnano.11.99 Abstract Tip-enhanced Raman spectroscopy is combined with polarization angle-resolved spectroscopy to investigate the nanometer-scale structural properties of core–shell silicon nanowires (crystalline Si core and amorphous Si shell), which were synthesized by platinum

• -catalyzed vapor–liquid–solid growth and silicon overcoating by thermal chemical vapor deposition. Local changes in the fraction of crystallinity in these silicon nanowires are characterized at an optical resolution of about 300 nm. Furthermore, we are able to resolve the variations in the intensity ratios

• -doped silicon nanowires (SiNWs). A rational strategy to obtain radial homo- and heterojunctions is to overcoat the as-grown nanowires within the same reaction chamber by implementing a conventional CVD process (e.g., thermal SiH4-CVD) yielding core–shell nanowires [14]. Although ideal epitaxial growth

Nanoarchitectonics: bottom-up creation of functional materials and systems

• Katsuhiko Ariga

Beilstein J. Nanotechnol. 2020, 11, 450–452, doi:10.3762/bjnano.11.36

• , the chiral structure was found to control the self-assembly of nitrocinnamic amide amphiphiles [25]. Works related to the formation of higher-dimensional materials included, for example, the self-assembly of crystalline cellulose oligomers that resulted in nanoribbon networks [26], silicon nanowires

The importance of design in nanoarchitectonics: multifractality in MACE silicon nanowires

• Stefania Carapezzi and
• Anna Cavallini

Beilstein J. Nanotechnol. 2019, 10, 2094–2102, doi:10.3762/bjnano.10.204

Novel reversibly switchable wettability of superhydrophobic–superhydrophilic surfaces induced by charge injection and heating

• Xiangdong Ye,
• Junwen Hou and
• Dongbao Cai

Beilstein J. Nanotechnol. 2019, 10, 840–847, doi:10.3762/bjnano.10.84

• termed electrowetting [19]. The equilibrium morphology under electrical wetting conditions is determined by the equilibrium of Maxwell stress and Laplace pressure [20][21]. Verplanck et al. [22] reported the reversible electrical wetting of droplets on superhydrophobic silicon nanowires in air and oil

Features and advantages of flexible silicon nanowires for SERS applications

• Hrvoje Gebavi,
• Vlatko Gašparić,
• Dubravko Risović,
• Nikola Baran,
• Paweł Henryk Albrycht and
• Mile Ivanda

Beilstein J. Nanotechnol. 2019, 10, 725–734, doi:10.3762/bjnano.10.72

• flexible silicon nanowires (SiNWs) substrates for surface-enhanced Raman spectroscopy (SERS) applications. The novel SERS substrates are described in detail considering three main aspects. First, the key synthesis parameters for the flexible nanostructure SERS substrates were optimized. It is shown that

• allowed hot spots occurrence. Finally, the test with 4-mercaptophenylboronic acid showed excellent SERS performance of the flexible, horizontally oriented SiNWs in comparison with several other commercially available substrates. Keywords: flexible hot spots; horizontal silicon nanowires; 4

• the targeted molecule. The Raman signal of these commercially available substrates exceeds that of competitors [19]. Therefore, these substrates can be considered as one of the top SERS substrates on the market. We have synthesized similar flexible, but horizontally oriented silicon nanowires (SiNWs

A carrier velocity model for electrical detection of gas molecules

• Ali Hosseingholi Pourasl,
• Sharifah Hafizah Syed Ariffin,
• Mohammad Taghi Ahmadi,
• Razali Ismail and
• Niayesh Gharaei

Beilstein J. Nanotechnol. 2019, 10, 644–653, doi:10.3762/bjnano.10.64

• electrical, physical, and chemical properties of graphene nanoribbons (GNRs) make them very interesting for use in the future generation of the electronic devices, such as field effect transistors (FETs), diodes, capacitors, memories, and sensors [1][2]. Compared to its counterparts, such as silicon

• nanowires and carbon nanotubes, GNRs possess high sensitivity, high electron and hole mobility, chemical stability, low noise, and a large surface-to-volume ratio, properties which are highly desired for gas sensor applications. Electrically, GNRs have shown high sensitivity to their surroundings and

Localized photodeposition of catalysts using nanophotonic resonances in silicon photocathodes

• Evgenia Kontoleta,
• Sven H. C. Askes,
• Lai-Hung Lai and
• Erik C. Garnett

Beilstein J. Nanotechnol. 2018, 9, 2097–2105, doi:10.3762/bjnano.9.198

• spots”. These areas can be used for localized extraction of the photogenerated charges, which in turn could drive chemical reactions for synthesis of catalytic materials. In this work, we use these nanophotonic hot spots in vertical silicon nanowires to locally deposit platinum nanoparticles in a photo

• -electrochemical system. The tapering angle of the silicon nanowires as well as the excitation wavelength are used to control the location of the hot spots together with the deposition sites of the platinum catalyst. A combination of finite difference time domain (FDTD) simulations with scanning electron

• structure. Here we present a different approach in which localized nanophotonic resonances in semiconductors are used to place catalyst particles exactly where they are needed. We show that the location of catalyst deposition on vertical silicon nanowires can be tuned by adjusting their shape (tapering

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• this work will have a minimum thickness of about 6 nm, so that the quantum-confinement effect can be neglected. An additional low-dimension effect is the dielectric confinement, which has been investigated in silicon nanowires surrounded by a dielectric material (such as its native oxide) [37][38]. For

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

• Tino Wagner,
• Fabian Menges,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2018, 9, 129–136, doi:10.3762/bjnano.9.15

• and thermal properties of individual junctions. Combined experiments on silicon nanowires have been attempted before, but the results and analysis remained qualitative [30]. Here, we have shown that experimental KFM and SThM methods in fact can be used to obtain quantitative models, if parasitic

Self-assembly of silicon nanowires studied by advanced transmission electron microscopy

• Marta Agati,
• Guillaume Amiard,
• Vincent Le Borgne,
• Paola Castrucci,
• Richard Dolbec,
• Maurizio De Crescenzi,
• My Alì El Khakani and
• Simona Boninelli

Beilstein J. Nanotechnol. 2017, 8, 440–445, doi:10.3762/bjnano.8.47

• of silicon nanowires (SiNWs) that were self-assembled during an inductively coupled plasma (ICP) process. The ICP-synthesized SiNWs were found to present a Si–SiO2 core–shell structure and length varying from ≈100 nm to 2–3 μm. The shorter SiNWs (maximum length ≈300 nm) were generally found to

• approaches used for the production of thin SiNWs. Keywords: silicon nanowires; transmission electron microscopy; vapor–liquid–solid growth; Introduction As the scaling down of the feature size of devices proceeds [1], new synthesis routes are being explored to produce materials with ultra-low

Diffusion of dilute gas in arrays of randomly distributed, vertically aligned, high-aspect-ratio cylinders

• Wojciech Szmyt,
• Carlos Guerra and
• Ivo Utke

Beilstein J. Nanotechnol. 2017, 8, 64–73, doi:10.3762/bjnano.8.7

• : dilute gas; gas transport; molecular diffusion; nanocylinders; random walk; Introduction Arrays of vertically aligned nanowires and nanotubes with high-aspect ratio composed of various materials have been widely used in science and industry. Arrays of silicon nanowires [1][2] and carbon nanotubes [3

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

• Siti Noorhaniah Yusoh and
• Khatijah Aisha Yaacob

Beilstein J. Nanotechnol. 2016, 7, 1461–1470, doi:10.3762/bjnano.7.138

• important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations

• (30, 40, and 50 s) were investigated. The relationships between etching depth and width, and etching rate and surface roughness of silicon nanowires were characterized in detail using atomic force microscopy (AFM). The obtained results indicate that increased IPA concentration in TMAH produced greater

• width of the silicon nanowires with a smooth surface. It was also observed that the use of a longer etching time causes more unmasked silicon layers to be removed. Importantly, throughout this study, wet etching with optimized parameters can be applied in the design of the devices with excellent

Simple approach for the fabrication of PEDOT-coated Si nanowires

• Mingxuan Zhu,
• Marielle Eyraud,
• Judikael Le Rouzo,
• Nadia Ait Ahmed,
• Florence Boulc’h,
• Claude Alfonso,
• Philippe Knauth and
• François Flory

Beilstein J. Nanotechnol. 2015, 6, 640–650, doi:10.3762/bjnano.6.65

• . An extremely large shunt resistance was exhibited and determined to be related to the diffusion conditions occurring during polymerization. Keywords: conductive polymer; core–shell structure; electrodeposition; hybrid material; SiNW; Introduction Silicon nanowires (SiNWs) are a current, active

• the present study, the preparation of a hybrid SiNW/PEDOT material using both chemical and electrochemical methods has been studied. The resulting structures based on silicon nanowires show interesting antireflective properties, with a reflection as low as 2% in the visible spectral range of 400–800

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• . Keywords: nanofabrication; nanostructures; silicon nanowires; thermoelectricity; Introduction The thermoelectric (TE) effect, known since the 19th century, offers an interesting perspective for the direct conversion of heat in electrical power, and vice versa. Given a thermal gradient, a thermoelectric

• reduction of thermal conductivity in rough silicon nanowires [8][9][10]. For this reason, section IV is dedicated to the review of the main techniques currently investigated for the fabrication of silicon nanostructures that can be integrated in devices for thermoelectric generation. Review Principles of

• . Moreover, the electrical conductivity of very small nanostructures is strongly reduced by the surface scattering of charge carriers. As an example, Figure 5 shows the Seebeck coefficient evaluated for silicon nanowires with triangular cross section [18], as a function of the nanowire width (triangular base

Methods for rapid frequency-domain characterization of leakage currents in silicon nanowire-based field-effect transistors

• Tomi Roinila,
• Xiao Yu,
• Jarmo Verho,
• Tie Li,
• Pasi Kallio,
• Matti Vilkko,
• Anran Gao and
• Yuelin Wang

Beilstein J. Nanotechnol. 2014, 5, 964–972, doi:10.3762/bjnano.5.110

• of the authors. The number of studies considering frequency-domain measurements of SiNW FETs is very low. The authors in [9] applied low-frequency noise spectroscopy (LFNS), and characterized generation–recombination centers in silicon nanowires grown by using chemical vapor deposition. Their aim was

Many-body effects in semiconducting single-wall silicon nanotubes

• Wei Wei and
• Timo Jacob

Beilstein J. Nanotechnol. 2014, 5, 19–25, doi:10.3762/bjnano.5.2

• results shed some light on understanding the physical properties of SiNTs and potential applications in silicon-based nanoscale device components. It should be pointed out that many-body effects have also been highlighted in silicon nanowires [24][42] and carbon nanotubes due to the reduced dimensionality