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Search for "thin films" in Full Text gives 448 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Supramolecular hydration structure of graphene-based hydrogels: density functional theory, green chemistry and interface application

  • Hon Nhien Le,
  • Duy Khanh Nguyen,
  • Minh Triet Dang,
  • Huyen Trinh Nguyen,
  • Thi Bang Tam Dao,
  • Trung Do Nguyen,
  • Chi Nhan Ha Thuc and
  • Van Hieu Le

Beilstein J. Nanotechnol. 2025, 16, 806–822, doi:10.3762/bjnano.16.61

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  • compression at 190 °C. As a result, thin and transparent PLA films were made with the average thickness of 0.2 mm. In the next stage, the GO-SG-ZH nanocomposite in hydrogel form (≈95% water) was used as an aqueous paint for brush coating on PLA thin films. After brush coating, the coated films were left to
  • air dry for 3 h and were mildly dried using a hair dryer. The obtained coated films were denoted as GO-SG-ZH/PLA. Besides, the as-synthesized SG hydrogel (≈95% water) was also suitable for direct brush coating on PLA films. A similar procedure of brush coating was applied to produce PLA thin films
  • of GO-SG-ZH hydrogel. (a) A blank polylactide film (PLA). (b) A polylactide film coated with nanosilica (SG/PLA). (c) A polylactide film coated with graphene oxide–nanosilica–zinc hydroxide (GO-SG-ZH/PLA). (d) Light transmittance spectroscopy of thin films of PLA, SG/PLA, and GO-SG-ZH/PLA. (a, b, c
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Published 04 Jun 2025

Morphology and properties of pyrite nanoparticles obtained by pulsed laser ablation in liquid and thin films for photodetection

  • Akshana Parameswaran Sreekala,
  • Bindu Krishnan,
  • Rene Fabian Cienfuegos Pelaes,
  • David Avellaneda Avellaneda,
  • Josué Amílcar Aguilar-Martínez and
  • Sadasivan Shaji

Beilstein J. Nanotechnol. 2025, 16, 785–805, doi:10.3762/bjnano.16.60

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  • nanocolloids. The structural, morphological and electrical characterizations of the films are also presented. By sulfurization of the films, phase-pure pyrite thin films are obtained. The photodetection range was up to 785 nm photocurrent in the order of 10−6 to 10−4 A for different annealing conditions and a
  • . reported the synthesis of single-phase FeS2 thin films using a combination of electrochemical and hydrothermal techniques. The electrodeposition was performed in a nonaqueous electrolytic bath consisting of diethylene glycol [24]. Among the deposition techniques, electrophoretic deposition (EPD) is a cost
  • ][27][28]. In previous reports on pyrite thin films produced by EPD, Duan et al. deposited pyrite powder created using the sol–gel hydrothermal technique onto ITO substrates [29]. There are no other reports on the deposition of pyrite films using electrophoretic deposition. Spin coating is another thin
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Published 03 Jun 2025

High-temperature epitaxial growth of tantalum nitride thin films on MgO: structural evolution and potential for SQUID applications

  • Michelle Cedillo Rosillo,
  • Oscar Contreras López,
  • Jesús Antonio Díaz,
  • Agustín Conde Gallardo and
  • Harvi A. Castillo Cuero

Beilstein J. Nanotechnol. 2025, 16, 690–699, doi:10.3762/bjnano.16.53

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  • Física, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (CINVESTAV-IPN), Apdo. Postal 14-740, México D.F. 07360, México 10.3762/bjnano.16.53 Abstract The growth of superconducting tantalum nitride (TaN) thin films on magnesium oxide (MgO) substrates has been studied
  • superconducting films. Keywords: epitaxial growth; SQUID; structural evolution; superconductivity; TaN thin films; Introduction Superconductivity is a quantum mechanical phenomenon characterized by the complete absence of electrical resistance in certain materials when cooled below a critical superconducting
  • nitride system TaNx can be an insulator, semiconductor, or superconductor and also can exhibit a variety of crystallographic phases [8][9]. For example, Nie and collaborators mentioned that Ta2N thin films presented a high-temperature coefficient of resistance, and resistors using this material as a
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Published 22 May 2025

Retrieval of B1 phase from high-pressure B2 phase for CdO nanoparticles by electronic excitations in CdxZn1−xO composite thin films

  • Arkaprava Das,
  • Marcin Zając and
  • Carla Bittencourt

Beilstein J. Nanotechnol. 2025, 16, 551–560, doi:10.3762/bjnano.16.43

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  • Abstract This study investigates the recovery of the B1 phase from the high-pressure B2 phase, at atmospheric pressure, in cadmium oxide (CdO) nanoparticles incorporated within sol–gel synthesized CdxZn1−xO (x = 0.40) composite thin films. The recovery process is investigated using electronic excitations
  • ; Introduction Zinc oxide (ZnO)-based thin films are of significant interest due to their wide bandgap value (3.37 eV at room temperature), transparent electrical conduction, and large excitonic binding energy (60 meV) [1]. In contrast, cadmium oxide (CdO) exhibits a lower bandgap of 2.2 eV, along with high
  • electron mobility (>100 cm2/V/s) and high electrical conductivity (>1014 S/cm), demonstrating its potential for optoelectronic applications [2][3][4]. The incorporation of cadmium into ZnO effectively reduces the bandgap, rendering the thin films suitable for applications in the visible region of the
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Published 17 Apr 2025

N2+-implantation-induced tailoring of structural, morphological, optical, and electrical characteristics of sputtered molybdenum thin films

  • Usha Rani,
  • Kafi Devi,
  • Divya Gupta and
  • Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 495–509, doi:10.3762/bjnano.16.38

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  • Usha Rani Kafi Devi Divya Gupta Sanjeev Aggarwal Ion Beam Centre, Department of Physics, Kurukshetra University, Kurukshetra-136119, India 10.3762/bjnano.16.38 Abstract Molybdenum (Mo) thin films have extensive applications in energy storage devices and photovoltaic solar cells because of their
  • remarkable thermal stability, high melting point, and chemical inertness. In the present study, Mo thin films of different thicknesses (150, 200, 250, and 300 nm) have been deposited on Si(100) substrates via radio frequency sputtering in an argon atmosphere at room temperature. Some of these films have been
  • implanted with 1 × 1017 N2+·cm−2 at 30 keV using a current density of 4 µA·cm−2. Surface morphology and structural, optical, and electrical properties of the as-deposited and implanted Mo thin films have been systematically investigated. The crystallinity of Mo thin films is enhanced with increasing
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Published 01 Apr 2025

Impact of adsorbate–substrate interaction on nanostructured thin films growth during low-pressure condensation

  • Alina V. Dvornichenko,
  • Vasyl O. Kharchenko and
  • Dmitrii O. Kharchenko

Beilstein J. Nanotechnol. 2025, 16, 473–483, doi:10.3762/bjnano.16.36

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  • elastic adsorbate–substrate interactions in processes of nanostructuring of thin films during low-pressure condensation in the framework of theoretical approaches and numerical simulations. It will be shown that an increase in the elastic interaction strength induces first-order transitions and pattern
  • multicomponent substrates leads to the formation of a stationary surface morphology with an elevated number of adsorbate islands of smaller size, compared to one-component substrates. This study provides a deep insight into the peculiarities of nanostructured thin films’ growth in low-pressure systems with
  • different adsorbate–substrate bonding. Keywords: adsorbate–substrate interaction; adsorptive systems; numerical simulations; pattern formation; Introduction Innovative nanostructured thin films are widely exploited in ground-breaking developments regarding transistors [1][2], energy harvesting [3][4
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Published 28 Mar 2025

Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

  • Kafi Devi,
  • Usha Rani,
  • Arun Kumar,
  • Divya Gupta and
  • Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

Graphical Abstract
  • out using EDS, and the obtained spectra are shown in Figure 4a1–e1. The existence of zinc and tellurium peaks indicates the formation of ZnTe thin films. The silicon and oxygen peaks are from the quartz substrate. The atomic percentages of Zn and Te are listed in Table 4. The film deposited at room
  • thin films with varying thickness [35]. However, the changes we observed for direct bandgaps (1.47–3.11 eV) and indirect bandgaps (0.98–2.63 eV) are more significant. The existence of both direct and indirect bandgaps in a material has implications regarding the efficiency of solar cells. The
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Published 05 Mar 2025

Correction: AFM-IR investigation of thin PECVD SiOx films on a polypropylene substrate in the surface-sensitive mode

  • Hendrik Müller,
  • Hartmut Stadler,
  • Teresa de los Arcos,
  • Adrian Keller and
  • Guido Grundmeier

Beilstein J. Nanotechnol. 2025, 16, 252–253, doi:10.3762/bjnano.16.19

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  • /bjnano.16.19 Keywords: AFM-IR; polypropylene; surface-sensitive mode; silicon oxide; thin films; XPS; The authors regret that the acknowledgement in the publication is unfortunately not complete. The following sentence in the Funding section is missing: This work was supported by the German Research
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Published 20 Feb 2025

Recent advances in photothermal nanomaterials for ophthalmic applications

  • Jiayuan Zhuang,
  • Linhui Jia,
  • Chenghao Li,
  • Rui Yang,
  • Jiapeng Wang,
  • Wen-an Wang,
  • Heng Zhou and
  • Xiangxia Luo

Beilstein J. Nanotechnol. 2025, 16, 195–215, doi:10.3762/bjnano.16.16

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  • damage to surrounding tissues due to inadequate control over the heat distribution [100][101][102][103][104][105]. Innovations in this field have led to the development of transparent polylactic acid (PLA) thin films with embedded iron oxide nanoclusters prepared via spin coating [51]. The efficient
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Published 17 Feb 2025

Advanced atomic force microscopy techniques V

  • Philipp Rahe,
  • Ilko Bald,
  • Nadine Hauptmann,
  • Regina Hoffmann-Vogel,
  • Harry Mönig and
  • Michael Reichling

Beilstein J. Nanotechnol. 2025, 16, 54–56, doi:10.3762/bjnano.16.6

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  • al. present the application of AFM-based infrared nanospectroscopy to coated polymer surfaces [11]. The authors prepare thin films of SiOx on polypropylene surfaces by plasma-enhanced chemical vapor deposition (PE-CVD), which is commonly done to improve gas barrier properties of polypropylene. They
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Published 21 Jan 2025

Orientation-dependent photonic bandgaps in gold-dust weevil scales and their titania bioreplicates

  • Norma Salvadores Farran,
  • Limin Wang,
  • Primoz Pirih and
  • Bodo D. Wilts

Beilstein J. Nanotechnol. 2025, 16, 1–10, doi:10.3762/bjnano.16.1

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  • templating process employed here, the 3D geometry did not significantly increase the porosity of titania. Our estimate for the effective refractive index of titania in the 3D lattice is in the range reported for pure titania thin films (1.95–2.55 [38], 1.72–2.03 [39]), hybrid silica/titania thin films (1.95
  • the effective refractive index of titania thin films produced by sol–gel synthesis varies because of porosity, depending on the specific process, chemicals, and reaction conditions [41]. A higher annealing temperature seems to have a large influence on reducing the porosity of thin films, while
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Published 02 Jan 2025

Heterogeneous reactions in a HFCVD reactor: simulation using a 2D model

  • Xochitl Aleyda Morán Martínez,
  • José Alberto Luna López,
  • Zaira Jocelyn Hernández Simón,
  • Gabriel Omar Mendoza Conde,
  • José Álvaro David Hernández de Luz and
  • Godofredo García Salgado

Beilstein J. Nanotechnol. 2024, 15, 1627–1638, doi:10.3762/bjnano.15.128

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  • form atomic hydrogen, which reacts with the eleven solid quartz sources. A cloud or plasma is formed and finally reaches the substrate for the formation of the thin films. Finally, zone three is the exit of the gases that were not deposited in the film. The entire process is carried out under
  • condition. The simulations give us a broad overview on the probable reaction mechanisms during the deposition of thin films in the HFCVD reactor. This allows us to get an estimate of the types of species that will be deposited for the growth of thin films, which depend strongly on the parameters and
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Published 17 Dec 2024

Ion-induced surface reactions and deposition from Pt(CO)2Cl2 and Pt(CO)2Br2

  • Mohammed K. Abdel-Rahman,
  • Patrick M. Eckhert,
  • Atul Chaudhary,
  • Johnathon M. Johnson,
  • Jo-Chi Yu,
  • Lisa McElwee-White and
  • D. Howard Fairbrother

Beilstein J. Nanotechnol. 2024, 15, 1427–1439, doi:10.3762/bjnano.15.115

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  • transformations of precursor thin films. In this approach, the precursor is adsorbed onto a cooled substrate to form 1–2 nm thin films. The effects of ion beam exposure on the thin films are characterized by X-ray photoelectron spectroscopy to identify changes in the films’ composition and chemical environment
  • , and mass spectrometry to identify the volatile species produced by ion beam irradiation. Insights from these studies have been used to rationalize the composition of thin films formed by ion-induced deposition of Pt(CO)2Cl2 in the presence of Ar+ irradiation under steady-state deposition conditions
  • in the inset. The photoelectron spectra in Figure 2 display the C 1s, Cl 2p, and Pt 4f transitions of ≈2 nm thin films of Pt(CO)2Cl2 adsorbed at 230 K as a function of increasing ion dose (bottom to top). On the left-hand side the effect of Ar+ irradiation is shown, while on the right-hand side the
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Published 19 Nov 2024

Investigation of Hf/Ti bilayers for the development of transition-edge sensor microcalorimeters

  • Victoria Y. Safonova,
  • Anna V. Gordeeva,
  • Anton V. Blagodatkin,
  • Dmitry A. Pimanov,
  • Anton A. Yablokov and
  • Andrey L. Pankratov

Beilstein J. Nanotechnol. 2024, 15, 1353–1361, doi:10.3762/bjnano.15.108

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  • Academy of Sciences, Akademicheskaya Street, 7, Nizhny Novgorod, Russia, 603950, Russia 10.3762/bjnano.15.108 Abstract The superconducting properties of 85 nm thick hafnium thin films with a 5 nm thick titanium layer on top have been investigated for three different geometries, that is, a film covering
  • different geometries were investigated in a continuation of [10], in which thin films of both pure hafnium and hafnium in combination with normal metals were considered. It is expected that an additional processing operation (lithography and lift-off process) to form the bridges may degrade their properties
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Published 06 Nov 2024

New design of operational MEMS bridges for measurements of properties of FEBID-based nanostructures

  • Bartosz Pruchnik,
  • Krzysztof Kwoka,
  • Ewelina Gacka,
  • Dominik Badura,
  • Piotr Kunicki,
  • Andrzej Sierakowski,
  • Paweł Janus,
  • Tomasz Piasecki and
  • Teodor Gotszalk

Beilstein J. Nanotechnol. 2024, 15, 1273–1282, doi:10.3762/bjnano.15.103

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  • stresses in thin films by deflecting a cantilever of defined size from a uniform membrane. We see a need for such experiments for future improvement of our proposed RoI spacing tuning method. The proposed approach allowed us to evaluate the leakage currents separately from the nanodevice properties. It was
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Published 23 Oct 2024

The role of a tantalum interlayer in enhancing the properties of Fe3O4 thin films

  • Hai Dang Ngo,
  • Vo Doan Thanh Truong,
  • Van Qui Le,
  • Hoai Phuong Pham and
  • Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

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  • promising applications. High-quality Fe3O4 thin films are a must to achieve the goals. In this report, Fe3O4 films on different substrates (SiO2/Si(100), MgO(100), and MgO/Ta/SiO2/Si(100)) were fabricated at room temperature with radio-frequency (RF) sputtering and annealed at 450 °C for 2 h. The
  • . More importantly, changes in grain size and structure due to the effect of the MgO/Ta buffering layers have a strong impact on saturation magnetization and coercivity of Fe3O4 thin films compared to cases of no or just a single buffering layer. Keywords: buffer layer; Fe3O4; magnetite; RF magnetron
  • K [1], as well as its high spin polarization with only one spin at the Fermi level, even at room temperature [2][3][4][5][6]. Fe3O4 thin films are an issue of interest and have extensive applications in Li-ion batteries, spin Seebeck devices, supercapacitors, spin Hall magnetoresistance, and the
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Published 14 Oct 2024

A low-kiloelectronvolt focused ion beam strategy for processing low-thermal-conductance materials with nanoampere currents

  • Annalena Wolff,
  • Nico Klingner,
  • William Thompson,
  • Yinghong Zhou,
  • Jinying Lin and
  • Yin Xiao

Beilstein J. Nanotechnol. 2024, 15, 1197–1207, doi:10.3762/bjnano.15.97

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  • different ion species, which are becoming more popular now, especially the lighter ion species where the assumption of a flat disc may not hold. Allen et al. showed that He ions can be beneficial when working with thin films [28] as they mostly transmit through the sample. The ion beam-induced heat for
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Published 27 Sep 2024

Photocatalytic methane oxidation over a TiO2/SiNWs p–n junction catalyst at room temperature

  • Qui Thanh Hoai Ta,
  • Luan Minh Nguyen,
  • Ngoc Hoi Nguyen,
  • Phan Khanh Thinh Nguyen and
  • Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

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  • tools is extremely essential and important [37][38][39]. Herein, we constructed a robust p–n junction catalyst by atomic layer deposition (ALD) of TiO2 thin films on a p-type SiNW substrate for enhancing the photocatalytic efficiency in CH4 oxidation. Pristine p-Si wafers have limited surface area and
  • properties of as-synthesized samples were analyzed using an X-ray diffraction system (XRD, Rigaku, SmartLab) with a 2θ range of 20–80° and a field-emission scanning electron microscope (FE-SEM, Hitachi, S-4700). The absorption properties of the thin films were analyzed using a diffuse reflectance UV–vis
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Published 02 Sep 2024

Beyond biomimicry – next generation applications of bioinspired adhesives from microfluidics to composites

  • Dan Sameoto

Beilstein J. Nanotechnol. 2024, 15, 965–976, doi:10.3762/bjnano.15.79

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  • independent fibers, it can have an effective Ec that is close to zero when in the unadhered state and will, therefore, minimally affect bending stiffness in comparison to two independent thin films of Ef. For the simplified model shown in Figure 8, if Ec ≪ Ef and t ≪ d, then the overall bending stiffness
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Published 05 Aug 2024

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

  • Monika Ozga,
  • Eunika Zielony,
  • Aleksandra Wierzbicka,
  • Anna Wolska,
  • Marcin Klepka,
  • Marek Godlewski,
  • Bogdan J. Kowalski and
  • Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

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  • and Technology, Wybrzeze Wyspiańskiego 27, 50–370 Wroclaw, Poland 10.3762/bjnano.15.62 Abstract This paper presents an investigation into the influence of repeating cycles of hydrothermal growth processes and rapid thermal annealing (HT+RTA) on the properties of CuO thin films. An innovative
  • , scanning capacitance microscopy measurements provided information on the changes in the local carrier concentration with each repetition. These studies indicate the increased usefulness of CuO thin films obtained from the HT+RTA procedure, which expands the possibilities of their applications in electronic
  • devices. Keywords: CuO; hydrothermal method; rapid thermal annealing; thin films; Introduction Copper(II) oxide is a p-type semiconductor possessing a narrow bandgap, along with many beneficial electrical, optical, and magnetic properties. Particularly at the nanoscale, these properties set themselves
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Published 24 Jun 2024

Elastic modulus of β-Ga2O3 nanowires measured by resonance and three-point bending techniques

  • Annamarija Trausa,
  • Sven Oras,
  • Sergei Vlassov,
  • Mikk Antsov,
  • Tauno Tiirats,
  • Andreas Kyritsakis,
  • Boris Polyakov and
  • Edgars Butanovs

Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58

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  • , University of Tartu, Nooruse 1, 50411 Tartu, Estonia Estonian Military Academy, Riia 12, 51010 Tartu, Estonia 10.3762/bjnano.15.58 Abstract Due to the recent interest in ultrawide bandgap β-Ga2O3 thin films and nanostructures for various electronics and UV device applications, it is important to understand
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Published 18 Jun 2024

AFM-IR investigation of thin PECVD SiOx films on a polypropylene substrate in the surface-sensitive mode

  • Hendrik Müller,
  • Hartmut Stadler,
  • Teresa de los Arcos,
  • Adrian Keller and
  • Guido Grundmeier

Beilstein J. Nanotechnol. 2024, 15, 603–611, doi:10.3762/bjnano.15.51

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  • the different measurement methods (i.e., contact mode and surface-sensitive mode) with respect to the chemical surface sensitivity. The use of the surface-sensitive mode in AFM-IR shows an enormous improvement for the analysis of thin films on the IR-active substrate. As a result, in this mode, the
  • signal of the substrate material could be significantly reduced. Even layers that are so thin that they could hardly be measured in the contact mode can be analyzed with the surface-sensitive mode. Keywords: AFM-IR; polypropylene; surface-sensitive mode; silicon oxide; thin films; XPS; Introduction
  • –sample force generated by the thermal expansion of the total excited volume is detected. This makes it very challenging to characterize thin films with a small thermal expansion coefficient (e.g., inorganic oxides) deposited on bulk materials with a large thermal expansion coefficient (e.g., polymers
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Published 24 May 2024

On the mechanism of piezoresistance in nanocrystalline graphite

  • Sandeep Kumar,
  • Simone Dehm and
  • Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

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  • density of defects in the form of grain boundaries. It holds an advantage over graphene in easily achieving wafer-scale growth with controlled thickness. In this study, we explore the piezoresistivity in thin films of nanocrystalline graphite. Simultaneous measurements of sheet resistance and externally
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Published 08 Apr 2024

Controllable physicochemical properties of WOx thin films grown under glancing angle

  • Rupam Mandal,
  • Aparajita Mandal,
  • Alapan Dutta,
  • Rengasamy Sivakumar,
  • Sanjeev Kumar Srivastava and
  • Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

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  • , Alagappa University, Karaikudi 630 003, India Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721 302, India 10.3762/bjnano.15.31 Abstract In this work, various physicochemical properties are investigated in nanostructured WOx thin films prepared by radio-frequency magnetron
  • identified to regulate the rectification ratio values at the WOx/p-Si heterostructures and increase in series resistance within the bulk of the films. The present study provides valuable insights to correlate optical, electrical, and structural properties of WOx thin films, which will be beneficial for
  • . In this regard, radio frequency (rf) sputter deposition is one of the preferred choices as an industry-compatible method to grow WOx thin films [2][19][20][21]. Apart from thin films, nanostructured metal oxides generally possess superior electrochemical properties compared to their bulk counterparts
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Published 02 Apr 2024

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS2 thin films with domains much smaller than the laser spot size

  • Felipe Wasem Klein,
  • Jean-Roch Huntzinger,
  • Vincent Astié,
  • Damien Voiry,
  • Romain Parret,
  • Houssine Makhlouf,
  • Sandrine Juillaguet,
  • Jean-Manuel Decams,
  • Sylvie Contreras,
  • Périne Landois,
  • Ahmed-Azmi Zahab,
  • Jean-Louis Sauvajol and
  • Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

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  • Raman spectroscopy is a widely used technique to characterize nanomaterials because of its convenience, non-destructiveness, and sensitivity to materials change. The primary purpose of this work is to determine via Raman spectroscopy the average thickness of MoS2 thin films synthesized by direct liquid
  • growth of wafer-scale MoS2 thin films on SiO2/Si substrates by direct liquid injection pulsed-pressure chemical vapor deposition (DLI-PP-CVD) using low-toxicity precursors [27]. Such MoS2 thin films showed good stoichiometry (Mo/S = 1.94–1.95) and the potential for high photoluminescence quantum yield
  • develop and validate an approach for determining the average thickness of such sub-laser spot size inhomogeneous MoS2 thin films using Raman spectroscopy. First, we reassess here as a ground work the information that can be derived from the Raman spectra of MoS2 flakes for the evaluation of their
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Published 07 Mar 2024
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