Time-resolved probing of laser-induced nanostructuring processes in liquids

• Maximilian Spellauge,
• David Redka,
• Mianzhen Mo,
• Changyong Song,
• Heinz Paul Huber and
• Anton Plech

Beilstein J. Nanotechnol. 2025, 16, 968–1002, doi:10.3762/bjnano.16.74

Tendency in tip polarity changes in non-contact atomic force microscopy imaging on a fluorite surface

• Bob Kyeyune,
• Philipp Rahe and
• Michael Reichling

Beilstein J. Nanotechnol. 2025, 16, 944–950, doi:10.3762/bjnano.16.72

• a change of the tip-terminating cluster (i.e., a tip change) and a distance-dependent contrast evolution for a stable tip. Tip changes are inevitable in NC-AFM experiments with non-functionalized tips, especially as commonly used silicon tips are very reactive and readily pick up various entities

• -ordered CaF2(111) [24][25], see [26] for further preparation details. RT experiments were performed with a UHV 750 AFM system (RHK, Troy, MI USA) operated at a base pressure of 7.0 × 10−11 mbar. An Ar+ ion-sputtered silicon cantilever with an eigenfrequency of around 300 kHz and a quality factor of 22000

• grows in type-B epitaxy [24][25][32]. This implies that the direction of the silicon crystal surface points in opposite direction of the direction of the CaF2 thin film. The direction of the pristine Si(111) (7 × 7) surface was determined by identifying the faulted and unfaulted halves of the (7 × 7

Focused ion beam-induced platinum deposition with a low-temperature cesium ion source

• Thomas Henning Loeber,
• Bert Laegel,
• Meltem Sezen,
• Feray Bakan Misirlioglu,
• Edgar J. D. Vredenbregt and
• Yang Li

Beilstein J. Nanotechnol. 2025, 16, 910–920, doi:10.3762/bjnano.16.69

• avoid, for example, any inhomogeneous ripple structures. The dwell time was always 200 ns. For growth rate characterization, Pt layers with a length of 20 μm and a width of 1 μm were deposited on silicon (Si). The ion beam currents were changed, while the pattern size was kept constant. With the Cs+ FIB

Characterization of ion track-etched conical nanopores in thermal and PECVD SiO₂ using small angle X-ray scattering

• Shankar Dutt,
• Rudradeep Chakraborty,
• Christian Notthoff,
• Pablo Mota-Santiago,
• Christina Trautmann and
• Patrick Kluth

Beilstein J. Nanotechnol. 2025, 16, 899–909, doi:10.3762/bjnano.16.68

• , and the type and energy of the ions used [13][29][40]. Track-etch technology has been used for the commercial fabrication of cylindrical nanopores in polymers for filtration applications [41][42][43][44][45][46]. Only recently we have adapted this technology to generate conical nanopores in silicon

• dioxide [29][40][30]. Amorphous silicon dioxide (SiO2) has excellent chemical stability, well-understood surface chemistry, and compatibility with semiconductor processing, opening up new applications for track-etched nanopores in this material [30]. In this study, we report the characterization of track

• -etched nanopores in two types of silicon dioxide, namely, one produced by wet thermal oxidation of Si (thermal SiO2) and another deposited by plasma-enhanced chemical vapor deposition (PECVD). Thermally grown SiO2 is of high quality and stoichiometric, however, requires high temperatures for growth, and

Heat-induced transformation of nickel-coated polycrystalline diamond film studied in situ by XPS and NEXAFS

• Olga V. Sedelnikova,
• Yuliya V. Fedoseeva,
• Dmitriy V. Gorodetskiy,
• Yuri N. Palyanov,
• Elena V. Shlyakhova,
• Eugene A. Maksimovskiy,
• Anna A. Makarova,
• Lyubov G. Bulusheva and
• Aleksandr V. Okotrub

Beilstein J. Nanotechnol. 2025, 16, 887–898, doi:10.3762/bjnano.16.67

• 68.1 eV corresponds to the oxidized states of nickel (Ni–O). The appearance of these states may be due to the interaction of nickel with residual water in the vacuum chamber or with oxygen desorbed from the silicon substrate during annealing [47]. The low-energy doublet with the Ni 3p3/2 component at

• surface. Our results can be useful for controlling the growth of graphitic coatings on dielectric diamond surfaces with a polycrystalline structure and grains of different sizes and crystallographic orientations. Experimental The growth of PCD films on silicon substrates was performed using PE CVD with a

Synchrotron X-ray photoelectron spectroscopy study of sodium adsorption on vertically arranged MoS₂ layers coated with pyrolytic carbon

• Alexander V. Okotrub,
• Anastasiya D. Fedorenko,
• Anna A. Makarova,
• Veronica S. Sulyaeva,
• Yuliya V. Fedoseeva and
• Lyubov G. Bulusheva

Beilstein J. Nanotechnol. 2025, 16, 847–859, doi:10.3762/bjnano.16.64

• before the three-step experiment and after each modification. Survey XPS spectra of the samples revealed the presence of molybdenum, sulfur, carbon, sodium, and oxygen (Supporting Information File 1, Figure S2). The intense lines of silicon and oxygen detected in the spectrum of the PyC film are

• consisting of MoS2 and graphite thin layers in SIBs. The presence of PyC protects the surface of MoS2 from excess sodium concentration and, consequently, from the destruction of the original MoS2 structure. Experimental The substrates cut from a single-crystal silicon wafer were annealed in air at 1323 K for

Supramolecular hydration structure of graphene-based hydrogels: density functional theory, green chemistry and interface application

• Hon Nhien Le,
• Duy Khanh Nguyen,
• Minh Triet Dang,
• Huyen Trinh Nguyen,
• Thi Bang Tam Dao,
• Trung Do Nguyen,
• Chi Nhan Ha Thuc and
• Van Hieu Le

Beilstein J. Nanotechnol. 2025, 16, 806–822, doi:10.3762/bjnano.16.61

• proportions of carbon, oxygen, silicon, and zinc elements in both nanocomposites are relatively similar. Theoretical contents of SiO2 and Zn(OH)2 in the GO-SG-ZH nanocomposite powder are estimated to be 37.92% and 33.12%, respectively, so the remaining content of GO nanosheets is about 28.96%. Similarly, SiO2

• , Zn(OH)2, and GO contents derived from the GO-SG-ZH hydrogel are calculated to be 34.89%, 38.43%, and 26.68%, respectively. In Figure 4, the elemental mapping of the three-dimensional structure of the GO-SG-ZH hydrogel showed the presence and distribution of carbon, oxygen, silicon, and zinc atoms on

• appeared in Figure 8e, and nanoparticles of SG and ZH were shown in Figure 8f. Integrated EDS analysis presented the elemental composition on the surface of the GO-SG-ZH/PLA film (Table 3). With the atomic contents of 8.13% of silicon and 6.36% of zinc, the atomic proportions of SiO2 and Zn(OH)2 in the

Morphology and properties of pyrite nanoparticles obtained by pulsed laser ablation in liquid and thin films for photodetection

• Akshana Parameswaran Sreekala,
• Bindu Krishnan,
• Rene Fabian Cienfuegos Pelaes,
• David Avellaneda Avellaneda,
• Josué Amílcar Aguilar-Martínez and
• Sadasivan Shaji

Beilstein J. Nanotechnol. 2025, 16, 785–805, doi:10.3762/bjnano.16.60

• such properties [31]. For instance, it has been demonstrated that the wavelength-shifting characteristics of Si nanoparticles were caused by the effects of quantum-size confinement. The bandgap of silicon increased from its typical 1.1 eV in elemental form to nearly 3 eV in nanoparticle form, enhancing

• [35], the p-type nature of FeS2 was identified. Based on this, an n-type Si (n-Si) substrate was chosen to achieve the photodiode structure. Well cleaned n-type silicon substrates were used as the anode and the cathode in the EPD setup. With a 4.5 mm gap between them, the electrodes were positioned

• SEM analysis of pyrite thin films was performed using a Hitachi Model SU 8020. The NPs were deposited on carbon-coated copper grids for TEM analysis and on silicon substrates for SEM analysis. Using monochromatic Al Kα radiation with an energy of 1486.68 eV, X-ray photoelectron spectroscopy (XPS

Changes of structural, magnetic and spectroscopic properties of microencapsulated iron sucrose nanoparticles in saline

• Sabina Lewińska,
• Pavlo Aleshkevych,
• Roman Minikayev,
• Anna Bajorek,
• Mateusz Dulski,
• Krystian Prusik,
• Tomasz Wojciechowski and
• Anna Ślawska-Waniewska

Beilstein J. Nanotechnol. 2025, 16, 762–784, doi:10.3762/bjnano.16.59

• leaflet of the investigated material, silicon dioxide plays the role of an anti-caking agent. Thus, any interaction with other components should be excluded, and only a trace of it was expected in the investigated samples. However, as the Si 2p XSP spectra show, this is not the case, so assuming that the

• valency of the Si ions is four, some parts of the silicon atoms have an environment other than just oxygen. It appears impossible to determine what other atoms besides oxygen may be bonded to the Si atom to meet the bonding requirements, and only some suggestions may be made. Based on [99], it could be

• any combination of C and H atoms, whose quantity in the investigated samples is high due to the presence of sucrose and calcium alginate. It should also be added that Si 2p lines are observed for both samples, which is no surprise as silicon dioxide is insoluble in water. Figure 12c presents the XPS

Thickness dependent oxidation in CrCl₃: a scanning X-ray photoemission and Kelvin probe microscopies study

• Shafaq Kazim,
• Rahul Parmar,
• Maryam Azizinia,
• Matteo Amati,
• Muhammad Rauf,
• Andrea Di Cicco,
• Seyed Javid Rezvani,
• Dario Mastrippolito,
• Luca Ottaviano,
• Tomasz Klimczuk,
• Luca Gregoratti and
• Roberto Gunnella

Beilstein J. Nanotechnol. 2025, 16, 749–761, doi:10.3762/bjnano.16.58

• , Faculty of Applied Physics and Mathematics, 80-233 Gdansk, Poland 10.3762/bjnano.16.58 Abstract The modifications in the electronic properties induced by the thickness and size of an individual flake of transition-metal halides on different substrates (silicon oxide or In-doped tin oxide) are of

• silicon oxide substrate would help the determination of flakes thickness, we used also a more conductive substrate to measure photoemission under X-ray irradiation, that is, 1 nm thick native oxide Si substrates. Another convenient substrate for SPEM was 190 nm thick indium-doped tin oxide on glass

Synthesis of a multicomponent cellulose-based adsorbent for tetracycline removal from aquaculture water

• Uyen Bao Tran,
• Ngoc Thanh Vo-Tran,
• Khai The Truong,
• Dat Anh Nguyen,
• Quang Nhat Tran,
• Huu-Quang Nguyen,
• Jaebeom Lee and
• Hai Son Truong-Lam

Beilstein J. Nanotechnol. 2025, 16, 728–739, doi:10.3762/bjnano.16.56

• Field-emission SEM analysis was performed using a Merlin Compact instrument (Carl Zeiss, Jena, Germany) with an SE2 detector. The sample was mounted on a clean silicon wafer and coated with a nanoscale platinum layer using an ion sputter coater (Q150T Plus, Quorum Technologies, UK). EDX analysis was

Colloidal few layered graphene–tannic acid preserves the biocompatibility of periodontal ligament cells

• Teissir Ben Ammar,
• Naji Kharouf,
• Dominique Vautier,
• Housseinou Ba,
• Nivedita Sudheer,
• Philippe Lavalle and
• Vincent Ball

Beilstein J. Nanotechnol. 2025, 16, 664–677, doi:10.3762/bjnano.16.51

• pipetted onto clean silicon wafer substrates. The substrates were then air-dried and mounted on aluminum pins using double-sided carbon tape. Corresponding SEM images were subsequently captured. The S/TEM characterization was performed using a JEOL2100F microscope outfitted with a probe corrector for

Nanoscale capacitance spectroscopy based on multifrequency electrostatic force microscopy

• Pascal N. Rohrbeck,
• Lukas D. Cavar,
• Franjo Weber,
• Peter G. Reichel,
• Mara Niebling and
• Stefan A. L. Weber

Beilstein J. Nanotechnol. 2025, 16, 637–651, doi:10.3762/bjnano.16.49

• variable-frequency detection of C′, we apply two AC voltages of the same magnitude (VAC,1 = VAC,2) at frequencies n and (n + 1) times the second resonance frequency ωm,2. According to Equation 10, this will excite an oscillation at ωm,2 with an amplitude proportional to C′. Silicon microcapacitors To

• nanospectroscopy experiments. The microcapacitors were produced by focused ion beam (FIB) milling on a silicon wafer with a 300 nm layer of SiO2 and a 14 nm sputtered layer of Pt on it (Figure 2). Results and Discussion To investigate whether the C″-sensitive detection leads to an improved spatial resolution of

• locations on the microcapacitor sample. The first spectrum was recorded on one of the microcapacitors (C3, see Figure 2). Then, we measured in one of the FIB-etched trenches around the capacitors. Here, we assume that the bare silicon surface is covered by a thin native oxide layer (Si). Last, we measured

Polyurethane/silk fibroin-based electrospun membranes for wound healing and skin substitute applications

• Iqra Zainab,
• Zohra Naseem,
• Syeda Rubab Batool,
• Muhammad Waqas,
• Ahsan Nazir and
• Muhammad Anwaar Nazeer

Beilstein J. Nanotechnol. 2025, 16, 591–612, doi:10.3762/bjnano.16.46

• to create and analyze SF films with various nanostructures that exhibit tunable optical properties depending on the structure. When combined with silicon photodiodes, the power conversion efficiency increased by 6.96% with flat SF films and 14.9% with nanopatterned SF films. This demonstrates the

• design offers a large surface area. They are biocompatible, lowering the possibility of negative immune responses, and are adaptable to the use as films, gels, or scaffolds for different kinds of wounds [169]. Materials such as gold nanoparticles, graphene oxide, and silicon nanostructures are frequently

Retrieval of B1 phase from high-pressure B2 phase for CdO nanoparticles by electronic excitations in Cd_xZn_1−xO composite thin films

• Arkaprava Das,
• Marcin Zając and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2025, 16, 551–560, doi:10.3762/bjnano.16.43

• are predominantly attributed to the silicon substrate, with notable peaks at 303, 520, 620, and 671 cm−1. The peak at 435.9 cm−1 corresponds to the E2(H) mode characteristic of the wurtzite ZnO phase [17]. The persistence of the E2(high) mode across all O and Ag ion irradiated thin films, indicates

• temperature of 900 °C, Si diffusion intensifies, resulting in an increased thickness of the amorphous silicon oxide layer at the film–substrate interface [24]. The interdiffusion of Si, O, Cd, and Zn atoms near the SiOx layer (i.e., at the substrate–film interface) facilitates the formation of willemite

Functionalized gold nanoflowers on carbon screen-printed electrodes: an electrochemical platform for biosensing hemagglutinin protein of influenza A H1N1 virus

• Carlos Enrique Torres-Méndez,
• Sharmilee Nandi,
• Klara Martinovic,
• Patrizia Kühne,
• Yifan Liu,
• Sam Taylor,
• Maria Lysandrou,
• Maria Ines Berrojo Romeyro Mascarenhas,
• Viktoria Langwallner,
• Javier Enrique Sebastián Alonso,
• Ivana Jovanovic,
• Maike Lüftner,
• Georgia-Vasiliki Gkountana,
• David Bern,
• Abdul-Raouf Atif,
• Ehsan Manouchehri Doulabi,
• Gemma Mestres and
• Masood Kamali-Moghaddam

Beilstein J. Nanotechnol. 2025, 16, 540–550, doi:10.3762/bjnano.16.42

• sealed in place using silicon glue (Elastosil A07, Wacker). The device also consisted of two inlets and one outlet through which reagents can be made to pass through the device. The inlets and outlets were connected to reagent sources using silicon tubing (inner diameter = 1 mm, VWR). Preparation of the

Electron beam-based direct writing of nanostructures using a palladium β-ketoesterate complex

• Chinmai Sai Jureddy,
• Krzysztof Maćkosz,
• Aleksandra Butrymowicz-Kubiak,
• Iwona B. Szymańska,
• Patrik Hoffmann and
• Ivo Utke

Beilstein J. Nanotechnol. 2025, 16, 530–539, doi:10.3762/bjnano.16.41

• effective dwell time with a 600 nm FWHM of the electron beam), and 2000 cycles. For deposit morphology observation, a high-resolution Hitachi S4800 FESEM was used. The chemical composition of the deposits was confirmed through energy-dispersive X-ray spectroscopy (EDX) using a silicon drift detector from

• of the thin focused electron beam (FEB) deposit containing Pd, C, and O without substrate interference (native silicon oxide and silicon), the SAMx Stratagem thin film correction software, based on the work by Pouchou and Pichoir [43] was employed. Stratagem needs k-ratios (i.e., the ratio of X-ray

• SEM microscope with the same temperatures and GIS positions as those employed for FEB depositions on native-oxide silicon substrates. A square area of 0.97 × 0.97 µm2 was deposited at 20 keV electron energy, with a dwell time of 500 ns and a point-to-pitch of 9.5 nm. The stage current was measured to

N₂⁺-implantation-induced tailoring of structural, morphological, optical, and electrical characteristics of sputtered molybdenum thin films

• Usha Rani,
• Kafi Devi,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 495–509, doi:10.3762/bjnano.16.38

• minimizing the reflected power. Before deposition, the target surface was pre-sputtered for 15 min to remove any surface contamination. The silicon substrates were meticulously cleaned by washing them with distilled water and isopropyl alcohol and rinsing them with acetone. The vacuum chamber was evacuated

Performance optimization of a microwave-coupled plasma-based ultralow-energy ECR ion source for silicon nanostructuring

• Joy Mukherjee,
• Safiul Alam Mollick,
• Tanmoy Basu and
• Tapobrata Som

Beilstein J. Nanotechnol. 2025, 16, 484–494, doi:10.3762/bjnano.16.37

• extraction-based ion sources. Plasma physics principles are employed to interpret the observed variations in the beam current with various parameters. The optimized beam current is used to investigate the inert ion-induced nanopatterning of silicon surfaces, at various ion fluences and incidence angles. The

• beam current varies with different ion energies [29][30]. This article focuses on optimizing the beam current generated by a cost-effective microwave-based ECR ion source and the subsequent development of nanoscale patterns on the surface of silicon. The relationship between the beam current and

• various parameters is extensively examined and elucidated. Experimental parameters, spanning from plasma generation to ion beam extraction, are systematically optimized for the study of low-energy Ar-ion-induced nanostructures on silicon. The dependence of the extracted ion beam on gas pressure, magnetron

Synthetic-polymer-assisted antisense oligonucleotide delivery: targeted approaches for precision disease treatment

• Ana Cubillo Alvarez,
• Dylan Maguire and
• Ruairí P. Brannigan

Beilstein J. Nanotechnol. 2025, 16, 435–463, doi:10.3762/bjnano.16.34

Size control of nanoparticles synthesized by pulsed laser ablation in liquids using donut-shaped beams

• Abdel Rahman Altakroury,
• Oleksandr Gatsa,
• Farbod Riahi,
• Zongwen Fu,
• Miroslava Flimelová,
• Andrei Samokhvalov,
• Stephan Barcikowski,
• Carlos Doñate-Buendía,
• Alexander V. Bulgakov and
• Bilal Gökce

Beilstein J. Nanotechnol. 2025, 16, 407–417, doi:10.3762/bjnano.16.31

• and Figure 1c, respectively). To monitor the polarization of the donut-shaped beam, an additional Glan–Taylor polarizer was placed in front of the profiler. The spot diameters, 2wo, of the Gaussian beams (where wo is the beam waist) at the sample surface were measured with a silicon target using the

• D2 technique [51], obtaining similar spot sizes of 65 µm for the PHAROS laser and 72 µm for the NXT laser (1/e2 criterion). To evaluate the effective spot for the donut-shaped beam, we measured the pulse energy required to induce silicon damage and found that it is ca. 2.7 times higher than that for

• the morphology and size of the NPs synthesized by PLAL, the colloidal samples were drop-cast on a silicon wafer and dried for microscopic analysis. All NPs were characterized using scanning electron microscopy (SEM, Quanta 400 FEG, FEI Company, USA and TESCAN MIRA3 LMH, Brno, Czech Republic). The

Engineered PEG–PCL nanoparticles enable sensitive and selective detection of sodium dodecyl sulfate: a qualitative and quantitative analysis

• Soni Prajapati and
• Ranjana Singh

Beilstein J. Nanotechnol. 2025, 16, 385–396, doi:10.3762/bjnano.16.29

• as silicon oil (Cat. No. 015067), were obtained from CDH Fine Chemicals (India). All chemicals were used as received without further purification. Prior to experimentation, all glassware was cleaned with aqua regia (HCl:HNO3, 3:1 v/v) and thoroughly rinsed with double-distilled water. Methodology

• vigorously stirred in a silicon oil bath at 130 °C. Subsequently, a syringe introduced 2 mL of ε-caprolactone and 1 mL of stannous octoate (as a reaction catalyst) into the molten mPEG. The polymerization reaction was conducted under vacuum with continuous stirring at 130 °C for 24 h. After the

Pulsed laser in liquid grafting of gold nanoparticle–carbon support composites

• Madeleine K. Wilsey,
• Teona Taseska,
• Qishen Lyu,
• Connor P. Cox and
• Astrid M. Müller

Beilstein J. Nanotechnol. 2025, 16, 349–361, doi:10.3762/bjnano.16.26

• scanning electron microscope with a Schottky field-emission emitter was operated at 20.00 kV with a working distance of 4.9 mm. Energy-dispersive X-ray (EDX) spectroscopy data were collected using an SEM-integrated EDAX Octane elect plus spectrometer with a with silicon drift detector. Double sided carbon

Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• fossil fuels to fulfil the growing demands of energy results in environmental pollution. Environmentally friendly resources such as solar and wind energy can act as a substitute for these non-renewable energy resources because of their sustainability and abundance. Commonly, silicon-based solar cells are

• substrate are two important parameters for substrate selection. To the best of our knowledge, studies related to the impact of the substrate (silicon and quartz) and film deposition temperature up to 600 °C on the structural, morphological, optical, and electrical behaviour of RF-sputtered ZnTe films are

• ZnTe films on silicon substrates [24]. It was observed that 400 °C is the optimum temperature for the growth of ZnTe films. In this study, our we focus on optimizing the deposition parameters for ZnTe films on quartz substrates and study the impact of substrate temperature (300–600 °C) on various

Correction: AFM-IR investigation of thin PECVD SiO_x films on a polypropylene substrate in the surface-sensitive mode

• Hendrik Müller,
• Hartmut Stadler,
• Teresa de los Arcos,
• Adrian Keller and
• Guido Grundmeier

Beilstein J. Nanotechnol. 2025, 16, 252–253, doi:10.3762/bjnano.16.19

• /bjnano.16.19 Keywords: AFM-IR; polypropylene; surface-sensitive mode; silicon oxide; thin films; XPS; The authors regret that the acknowledgement in the publication is unfortunately not complete. The following sentence in the Funding section is missing: This work was supported by the German Research