Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• decomposition of one of the precursors. In this case, the process is within the regime of chemical vapour deposition (CVD), resulting in a continuous film growth. It is therefore essential to carry out the ALD process in a way that the first precursor only reacts with the second precursor during the second half

• under inert gas atmosphere. The bubbler was heated to 30 °C, which will result in a vapour pressure of 15.7 mbar according to the published Antoine parameters of Georgi and co-workers [23]. Pure argon (6N) was used as carrier gas for bubbling. The depositions in CVD mode were done with a continuous

• CVD to ALD: determining the upper temperature limit The metallic cobalt deposition process is based on the precursor dicobalt hexacarbonyl-1-heptyne [Co2(CO)6HC≡CC5H11]. The synthesis and basic characteristics of which have been described by Georgi and co-workers [23]. A schematic sketch of the

Control of morphology and crystallinity of CNTs in flame synthesis with one-dimensional reaction zone

• Muhammad Hilmi Ibrahim,
• Norikhwan Hamzah,
• Mohd Zamri Mohd Yusop,
• Ni Luh Wulan Septiani and
• Mohd Fairus Mohd Yasin

Beilstein J. Nanotechnol. 2023, 14, 741–750, doi:10.3762/bjnano.14.61

• . To date, many researchers have shown promising results on the synthesis control of CNTs to produce tailored CNT morphologies and properties through conventional furnace-based methods. Progress in CNT synthesis processes has been achieved mostly using chemical vapor deposition (CVD). Various studies

• on the growth control in CVD conclude that independent parameters, such as fuel selection, synthesis temperature, vapor pressure, and catalyst, govern CNT growth [6]; all can be manipulated for synthesis control. CVD is preferred because of the high degree of control and the possibility to synthesize

• at relatively low temperatures. However, CVD consumes a lot of energy for CNT growth, leading to increased production cost and, thus, making high-quality CNTs too expensive for practical applications. Alternatively, similar growth mechanisms of CNTs using the less common flame synthesis method are

On the use of Raman spectroscopy to characterize mass-produced graphene nanoplatelets

• Keith R. Paton,
• Konstantinos Despotelis,
• Naresh Kumar,
• Piers Turner and
• Andrew J. Pollard

Beilstein J. Nanotechnol. 2023, 14, 509–521, doi:10.3762/bjnano.14.42

• materials, either from large mechanically exfoliated flakes or CVD-grown materials. When measuring the Raman spectrum from aggregated few-layer graphene (FLG) powder, where many particles are probed in a single measurement, the Raman 2D peak still typically appears as a symmetric shape, although with lower

Studies of probe tip materials by atomic force microscopy: a review

• Ke Xu and
• Yuzhe Liu

Beilstein J. Nanotechnol. 2022, 13, 1256–1267, doi:10.3762/bjnano.13.104

• assembly methods, direct growth of carbon nanotubes by chemical vapor deposition (CVD) allows for increased bond strength between CNT tips and AFM probes. A pore growth method was used by Hafner et al. [42]. The method uses AFM imaging in contact mode to flatten the silicon tip, followed by hydrogen

• fluoride oxidation at the anode to form nanopores of 50–100 nm in diameter. After electrodeposition, the carbon nanotubes are grown by CVD at 750 °C. If the carbon nanotubes do not grow in a suitable trend, they are removed by oxidation. The CNT tips are then grown again by CVD. The CVD nanotube tips can

• optimal location on a flat tip. Due to the considerable length, a subsequent cutting process is required. Since the perpendicularity of the carbon nanotube probe is difficult to achieve in the above mentioned pore growth method, Edgeworth et al. [43] demonstrated a catalytic CVD (cCVD) growth method that

DNA aptamer selection and construction of an aptasensor based on graphene FETs for Zika virus NS1 protein detection

• Nathalie B. F. Almeida,
• Thiago A. S. L. Sousa,
• Viviane C. F. Santos,
• Camila M. S. Lacerda,
• Thais G. Silva,
• Rafaella F. Q. Grenfell,
• Flavio Plentz and
• Antero S. R. Andrade

Beilstein J. Nanotechnol. 2022, 13, 873–881, doi:10.3762/bjnano.13.78

• characterization utilizing field-effect transistors fabricated using single-layer graphene grown by chemical vapor deposition (CVD) and transferred to Si/SiO2 substrates. The wafers were purchased from Graphene Platform and we produced graphene transistors by conventional photolithography, following the procedures

• layer of SU-8. Figure S1a (Supporting Information File 1) shows an optical microscopy image of the typical CVD graphene device used in this work. The functionalization of the graphene devices with ZIKV60 aptamers was realized by overnight incubation in wet atmosphere with a 5 μL drop of 1 μM ZIKV60

• a Hill–Langmuir curve fitted to the experimental data (R2 = 0.9969). ZIKV60 aptamer characteristics. Supporting Information Optical microscopy image of our typical CVD graphene device, schematic illustration of the resulting ZIKV60-functionalized graphene devices and experimental setup used in the

Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production

• Chun-Da Liao,
• Andrea Capasso,
• Tiago Queirós,
• Telma Domingues,
• Fatima Cerqueira,
• Nicoleta Nicoara,
• Jérôme Borme,
• Paulo Freitas and
• Pedro Alpuim

Beilstein J. Nanotechnol. 2022, 13, 796–806, doi:10.3762/bjnano.13.70

• devices and applications [1][2][3]. Among the production methods, chemical vapor deposition (CVD) made substantial progress over the years and now guarantees high-quality standards for the growth of batches of graphene samples over wafer-scale areas [4][5][6]. This progress allowed for the fabrication of

• a wide range of 2D material-based devices and heterostructures, especially in optoelectronics [7][8][9]. At present, one of the remaining challenges in the fabrication of graphene-based devices lies in the reproducibility: More than the CVD itself, the transfer process from the growth substrate (e.g

• be considered: (i) metallic particles from the Cu or Ni etching process and (ii) PMMA residues after the removal and rinsing processes. Both contaminations are leading causes of undesired p-type doping in CVD graphene, accompanied by a deterioration of its electrical properties [19][20][21][22]. The

Tunable high-quality-factor absorption in a graphene monolayer based on quasi-bound states in the continuum

• Jun Wu,
• Yasong Sun,
• Feng Wu,
• Biyuan Wu and
• Xiaohu Wu

Beilstein J. Nanotechnol. 2022, 13, 675–681, doi:10.3762/bjnano.13.59

• traditional lithography, and then employ the conventional wet-base transfer method to transfer a CVD-grown graphene monolayer onto the grating structure. Conclusion In summary, an active graphene absorber, consisting of a graphene monolayer and a substrate spaced by a dielectric grating, is proposed and

Reliable fabrication of transparent conducting films by cascade centrifugation and Langmuir–Blodgett deposition of electrochemically exfoliated graphene

• Teodora Vićentić,
• Stevan Andrić,
• Vladimir Rajić and
• Marko Spasenović

Beilstein J. Nanotechnol. 2022, 13, 666–674, doi:10.3762/bjnano.13.58

• delve into fundamental properties was augmented with an outlook towards potential applications [1]. Over the past decades, a great number of different methods for the synthesis of graphene and other 2D materials has been proposed, including micromechanical cleavage [2], chemical vapor deposition (CVD

Revealing local structural properties of an atomically thin MoSe₂ surface using optical microscopy

• Lin Pan,
• Peng Miao,
• Anke Horneber,
• Alfred J. Meixner,
• Pierre-Michel Adam and
• Dai Zhang

Beilstein J. Nanotechnol. 2022, 13, 572–581, doi:10.3762/bjnano.13.49

• , in the AFM image in Figure 2c, one can clearly see the presence of particle aggregates, which were reported to be oxidation products (MoOxSey or MoO3) either through the CVD growth process or through aging in air. Sahoo et al. have reported that the aging of WSe2 flakes by exposure to air produces

Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• contact electrodes [25][26], or intermediate layer [27], and can greatly improve the life cycles of switches. However, CNTs prepared by CVD are randomly oriented, and positioning CNTs at the desired location is a challenge that hinders scalable manufacturing. Ward et al. [28] and Cha et al. [21] used spin

• quickly realize positioning and alignment of CNTs in 10–60 s. GR-NEM switches Based on the large-scale fabrication of graphene (GR) using CVD and oxygen plasma etching, GR-NEM switches have attracted the attention of researchers. Table 2 summarizes GR-NEM switch structures described in the literature. Two

• CVD for analog and digital bandwidth phase shifters. The phase shift was 355°/dB in the analog design at 2.4 GHz and 138°/dB in the digital design. Anjum et al. [60] used GR/MoS2 composite materials as beam to decrease the pull-in voltage below 1 V, which can be used in RF applications requiring low

Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

• . These chemical methods can be divided into two major techniques, namely chemical vapor deposition (CVD) with liquid-phase synthesis and colloidal synthesis. In general, the colloidal synthesis of NPs is highly acclaimed due to its versatility [16]. So-called bio-assisted methods, biosynthesis, or green

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• effort to prepare a Cr/Ge deposit in a nanostructured form. Using chemical vapor deposition (CVD), we succeeded to synthesize deposits containing CrGex NWs. Their structure was elucidated and measurements of individual NWs were carried out to determine their electrical resistivity. Results and Discussion

• resistivity component in the nanowire–deposit system. Conclusion Using CVD, we synthetized deposits containing CrGex NWs. The complex elemental composition was determined, the structure was elucidated, and resistivity measurements of individual NWs were performed and discussed. These measurements revealed the

• /filled nanoscale cables suitable for medicinal magnetic transport. Experimental CrGex deposits were synthetized using CVD. In a custom-made twin furnace (Supporting Information File 1, Figure S12), chromium(III) acetylacetonate powder (Sigma-Aldrich, 99.99%) was heated to 110 °C and evaporated in the

Irradiation-driven molecular dynamics simulation of the FEBID process for Pt(PF₃)₄

• Alexey Prosvetov,
• Alexey V. Verkhovtsev,
• Gennady Sushko and
• Andrey V. Solov’yov

Beilstein J. Nanotechnol. 2021, 12, 1151–1172, doi:10.3762/bjnano.12.86

• working chamber. Nowadays, FEBID permits the fabrication of nanostructures with sizes down to a few nanometers, which is similar to the size of the incident electron beam [7]. To date, FEBID mainly relies on precursor molecules developed for chemical vapor deposition (CVD), a process mainly governed by

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• a separate analysis of graphene strain, carrier concentration, and defects. The presented analysis is also important in the tracing of the interdependencies of the parameters which characterize graphene properties. Experimental Monolayer graphene was grown by chemical vapour deposition (CVD) on a

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• obtained via chemical methods [28][29] or via vapor–solid–liquid (VLS) and, less frequently, vapor–solid–solid (VSS) mechanisms. A metallic droplet (liquid or solid) acts as a catalyst, in chemical vapor deposition (CVD), or as a seed, in molecular beam epitaxy (MBE), for the NW growth [7][30][31]. By

Gold(I) N-heterocyclic carbene precursors for focused electron beam-induced deposition

• Cristiano Glessi,
• Aya Mahgoub,
• Cornelis W. Hagen and
• Mats Tilset

Beilstein J. Nanotechnol. 2021, 12, 257–269, doi:10.3762/bjnano.12.21

• applications from plasmonics [10] to optoelectronics [13]. Gold FEBID precursors (Figure 1) have had a similar history as other metal precursors, as the first tested compounds were taken from the existing library of gold precursors for chemical vapour deposition (CVD). The first compounds tested were gold

A review on the green and sustainable synthesis of silver nanoparticles and one-dimensional silver nanostructures

• Sina Kaabipour and
• Shohreh Hemmati

Beilstein J. Nanotechnol. 2021, 12, 102–136, doi:10.3762/bjnano.12.9

• deposition process. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) are among other chemical methods for nanoparticle synthesis. CVD is a method that allows production of nanoparticles on a substrate [241]. The process consists of three steps. First, the addition of a volatile precursor in

• precursor for this purpose [241]. An important advantage of this technique is the establishment of a silver-metal-oxide (e.g. SiO2 or TiO2) nanocomposite coating using only one deposition step [241]. The CVD method also provides many opportunities for the synthesis of silver-coated materials with varying

Towards 3D self-assembled rolled multiwall carbon nanotube structures by spontaneous peel off

• Jonathan Quinson

Beilstein J. Nanotechnol. 2020, 11, 1865–1872, doi:10.3762/bjnano.11.168

• change within CNTs and to optimize the formation of complex CNT structures, the possibility to couple aerosol-assisted chemical vapor deposition (AACVD) [20] and chemical vapor deposition (CVD) was explored [16]. For detailed synthesis and characterization protocols, including control experiments, please

• by the index with an ascending numerical order. Therefore, the two synthesis sequences described here lead to C1/N2/C3 and C1/N2/C3/N4 structures. The coupling of AACVD and CVD leads to MWCNTs with a compositional change [16]. In addition to obtaining the expected vertically aligned MWCNT forests or

• prepared by following a general approach detailed recently [16]. MWCNTs were synthesized at 800 °C with argon (Ar, 99.999%, BOC) as the carrier flow using an AACVD setup [12][23]. Briefly, MWCNTs were grown on silicon wafer substrates (10 × 20 mm2, Sibert, UK) by using an aerosol CVD setup consisting of a

One-step synthesis of carbon-supported electrocatalysts

• Sebastian Tigges,
• Nicolas Wöhrl,
• Ivan Radev,
• Ulrich Hagemann,
• Markus Heidelmann,
• Thai Binh Nguyen,
• Stanislav Gorelkov,
• Stephan Schulz and
• Axel Lorke

Beilstein J. Nanotechnol. 2020, 11, 1419–1431, doi:10.3762/bjnano.11.126

• Abstract Cost-efficiency, durability, and reliability of catalysts, as well as their operational lifetime, are the main challenges in chemical energy conversion. Here, we present a novel, one-step approach for the synthesis of Pt/C hybrid material by plasma-enhanced chemical vapor deposition (PE-CVD). The

• applications as they show significantly improved electrochemical long-term stability compared to the industrial standard HiSPEC 4000. The PE-CVD process is furthermore expected to be extendable to the general deposition of metal-containing carbon materials from other commercially available metal

• acetylacetonate precursors. Keywords: electrocatalyst; fuel cells; hybrid nanomaterial; long-term stability; nanoparticle embedding; one-step synthesis; plasma-enhanced chemical vapor deposition (PE-CVD); Introduction The global fuel cell market reached a value of $4.5 billion USD in 2018 and is projected to

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• demonstrated impressive on/off ratios (approx. 107) in field-effect transistors (FETs), while maintaining carrier mobilities that may be adequate for commercial applications [1][2]. At the same time, advances in chemical vapor deposition (CVD) techniques have allowed for the reliable millimeter-scale synthesis

• synthesized using a CVD microreactor method, described in detail in [33], directly on 285 nm SiO2/Si substrates, which also served as the back-gate in the FET configuration. MoS2 flakes were contacted with electrodes using standard electron beam lithography on polymethyl methacrylate (PMMA) resist, followed

• applications. Experimental design and basic electrical characteristics. (a) Sketch demonstrating the irradiation strategy on contacted CVD-grown monolayer MoS2 devices. The green area marks the designed irradiation area. (b) SEM image of an irradiated device. W marks the width of the exposed region, while L is

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• to chemical vapor deposition (CVD), and enables direct nanowire growth in a bottom-up manner. The nanowire composition, in particular the doping concentration, can be controlled by an adequate adjustment of the synthesis gas mixture, e.g., by setting the SiH4/B2H6 ratio during the synthesis of boron

• -doped silicon nanowires (SiNWs). A rational strategy to obtain radial homo- and heterojunctions is to overcoat the as-grown nanowires within the same reaction chamber by implementing a conventional CVD process (e.g., thermal SiH4-CVD) yielding core–shell nanowires [14]. Although ideal epitaxial growth

• grains with different orientation. Furthermore, catalyst migration along the SiNW backbone was observed in some cases (Figure 1c). Although the SiNWs grown by the VLS mechanism possess are crystalline, the silicon shells deposited onto the nanowires by thermal CVD (here using a temperature of 520 °C) can

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films

• Vadim Morari,
• Aida Pantazi,
• Nicolai Curmei,
• Vitalie Postolache,
• Emil V. Rusu,
• Marius Enachescu,
• Ion M. Tiginyanu and
• Veaceslav V. Ursaki

Beilstein J. Nanotechnol. 2020, 11, 899–910, doi:10.3762/bjnano.11.75

• radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) [2][7][10][11], DC [12][13] and RF [1][3][6] magnetron sputtering, pulsed laser deposition (PLD) [14][15], plasma-enhanced atomic layer deposition (PE-ALD) [16], chemical vapor deposition (CVD) [17], metal–organic chemical vapor deposition

• -ZnMgO films produced by CVD in the composition range x = 0.61–0.81 [17], where a relatively large Stokes-like shift of 0.7–0.8 eV was observed. The understanding of the influence of compositional fluctuations in sol–gel spin-coated ZnMgO thin films on their properties is of particular importance

Templating effect of single-layer graphene supported by an insulating substrate on the molecular orientation of lead phthalocyanine

• K. Priya Madhuri,
• Abhay A. Sagade,
• Pralay K. Santra and
• Neena S. John

Beilstein J. Nanotechnol. 2020, 11, 814–820, doi:10.3762/bjnano.11.66

• ) substrate [24]. It will be interesting to explore the molecular orientation of nonplanar PbPc on single-layer graphene supported on a substrate. In this study, we have investigated the molecular orientation of a PbPc film deposited on chemical vapor deposition (CVD)-grown graphene transferred onto a SiO2/Si

• of PbPc on graphene revealing interconnected highly conducting domains. Results and Discussion The Raman spectrum of CVD-grown single-layer graphene transferred onto a SiO2/Si substrate (referred to as SLG/SiO2/Si hereafter) is presented in Figure 2. A sharp and strong peak at 2680 cm−1 corresponds

• -on configuration are still observed. In the case of CVD graphene transferred on to substrates by the polymer method, it has been reported that the presence of polymer residues can cause edge-on orientation for pentacene on graphene [11]. However, in this work, effort has been taken to remove any

Light–matter interactions in two-dimensional layered WSe₂ for gauging evolution of phonon dynamics

• Avra S. Bandyopadhyay,
• Chandan Biswas and
• Anupama B. Kaul

Beilstein J. Nanotechnol. 2020, 11, 782–797, doi:10.3762/bjnano.11.63

• work reported τ over a range T = 4.4–300 K in naturally abundant and isotopically pure WSe2 grown by the chemical vapor deposition (CVD) method [29]. In one of our recent works, exciton dynamics and phonon lifetimes in CVD-grown and mechanically exfoliated 1L WSe2 nanosheets were analyzed and τ

• increase significantly. In one of our prior reports [30], similar trends were observed in the intensities of and A1g mode in CVD-grown 1L WSe2. However, the ΔωT in and A1g modes were found to be less (ΔωT ≈ 5.10 cm−1, ΔωT(A1g) ≈ 3.54 cm−1) in the case of CVD grown 1L WSe2 [30], which could be attributed

• decreased interfacial defect density and built-in strain on sapphire that reduces the electron–phonon interaction in the material [30]. The value of τ obtained in our study is also comparable to what has been reported for τ in 1L CVD grown WSe2 (≈0.76 ps) [30], bilayer CVD grown WSe2 (≈2.4 ps) [29], MoS2

Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

• complexes, it is shown they are low-energy formation defects in h-BN. This suggests that the assignment is presently controversial also considering the successive verification of SPEs as discussed in the following. In [45] h-BN exfoliated flakes, monolayer chemical vapor deposition (CVD) and in-house h-BN

• between different SPEs. A large variety of SPEs was observed. It was observed that thinner and edgier flakes had higher SPE density, and in the CVD material, SPEs had more brightness compared to flakes. The SPEs could be modeled by 2-level and 3-level systems with a variety of decay rates: for a two-level

• , with widespread ZPLs from UV to NIR, which limits the potential development of h-BN-based devices and applications and their controllable formation. In [109], it is shown that in CVD large-area, few-layer h-BN films, more than 85% of the emitters have a ZPL at (580 ± 10) nm, while maintaining a high