Graphene oxide–chloroquine conjugate induces DNA damage in A549 lung cancer cells through autophagy modulation

• Braham Dutt Arya,
• Sandeep Mittal,
• Prachi Joshi,
• Alok Kumar Pandey,
• Jaime E. Ramirez-Vick,
• Govind Gupta and
• Surinder P. Singh

Beilstein J. Nanotechnol. 2025, 16, 316–332, doi:10.3762/bjnano.16.24

• defect band (D band) in the Raman spectra (recorded at an excitation wavelength of 514 nm) of the compounds. Supporting Information File 1, Figure S1c reveals the appearance of the G band (1581 cm−1) and D band (1352 cm−1) for graphite, corresponding to the E2g symmetric vibrations associated with the

Preferential enrichment and extraction of laser-synthesized nanoparticles in organic phases

• Theo Fromme,
• Maximilian L. Spiekermann,
• Florian Lehmann,
• Stephan Barcikowski,
• Thomas Seidensticker and
• Sven Reichenberger

Beilstein J. Nanotechnol. 2025, 16, 254–263, doi:10.3762/bjnano.16.20

• depends on where in the plume they stem from, and there is a distribution of cooling rates ranging at least over three orders of magnitude, from less than 1011 to 1013 K·s−1, evidencing undercooling effects and defect-rich nanoparticle crystallization [59]. One may hypothesize that the different cooling

A review of metal-organic frameworks and polymers in mixed matrix membranes for CO₂ capture

• Charlotte Skjold Qvist Christensen,
• Nicholas Hansen,
• Mahboubeh Motadayen,
• Nina Lock,
• Martin Lahn Henriksen and
• Jonathan Quinson

Beilstein J. Nanotechnol. 2025, 16, 155–186, doi:10.3762/bjnano.16.14

• Figure 6a, is crucial for the gas separation performance of MOF-based MMMs, as it helps overcome defect formation and control interface morphology. There are five types of common defects for MOF-based MMMs, namely (1) voids around the MOF, Figure 6b, (2) rigidified polymer around the MOF, Figure 6c, (3

• rigidification effects and partial pore blockage. This rigidified polymer may also alter the effective MOF apertures, affecting MMM selectivity unpredictably [78][87][115][119]. The rigidified polymer defect typically forms during the solvent removal step, see Figure 4, where rapid solvent removal quenches the

• –polymer matrix interface compatibility are crucial for reducing plasticization. 3.5.6 Reducing defect propensity. Besides the techniques already discussed, the formation of defects in MOF-based MMMs can be significantly reduced by optimizing the MOF–polymer interface through MOF or polymer

Comparison of organic and inorganic hole transport layers in double perovskite material-based solar cell

• Deepika K and
• Arjun Singh

Beilstein J. Nanotechnol. 2025, 16, 119–127, doi:10.3762/bjnano.16.11

• 25.44% with VOC = 1.1027 V, JSC = 27.89 mA/cm2, and FF = 82.69%, suggesting the suitability of La2NiMnO6. In 2024, Singh et al. proposed a planar DPSC with La2NiMnO6 as absorber layer, Cu2O as HTL, and WS2 as ETL, and several parameters of the absorber layer including thickness, defect density, series

• and shunt resistance, interfacial defect density, and various metal electrodes were studied. An efficiency of 18.89% with VOC = 0.7919 V, JSC = 27.89 mA/cm2, and FF = 85.52% was reported for the device structure FTO/WS2/La2NiMnO6/Cu2O/Au [15][16]. In 2023, the highest optimized efficiency of 24.08

• possible that misalignment of energy levels due to thermal effects can hinder efficient hole extraction, further increasing recombination losses. Effect of absorber layer defect density Defects in the absorber layer hinder carrier transportation between the absorber layer and the CTLs, leading to a drop in

Advanced atomic force microscopy techniques V

• Philipp Rahe,
• Ilko Bald,
• Nadine Hauptmann,
• Regina Hoffmann-Vogel,
• Harry Mönig and
• Michael Reichling

Beilstein J. Nanotechnol. 2025, 16, 54–56, doi:10.3762/bjnano.16.6

• different origins. The authors assign one type of defects to a possible defect in the Ir surface. The other type is identified as four missing carbon atoms corroborated by a higher reactivity with the tip. We thank all authors who contributed to this thematic issue and we are grateful to all reviewers for

Effect of radiation-induced vacancy saturation on the first-order phase transformation in nanoparticles: insights from a model

• Aram Shirinyan and
• Yuriy Bilogorodskyy

Beilstein J. Nanotechnol. 2024, 15, 1453–1472, doi:10.3762/bjnano.15.117

• , and other emerging nanotechnologies. When HDCMs are exposed to radiation, such as ion bombardment or exposure to high-energy radiation sources, defects (vacancies, interstitials, point defect clusters, voids, and interstitial loops) are created in the crystal lattice because of the displacement of

• , and cavities [1][2]. Experimental studies on Pd have shown that the defect density generally increases with grain size; in grains smaller than 30 nm, no defects were observed [3], suggesting that large defects (clusters and dislocations) do not exist in small nanoparticles. One possible explanation is

• based on the fact that the movement of dislocations is impeded by particle surfaces (grain boundaries) quite rapidly. For example, a transmission electron microscopy study (irradiation with Kr ions at 1 MeV at room temperature and an average defect generation rate of about 2 × 10−3 dpa·s−1) showed that

Strain-induced bandgap engineering in 2D ψ-graphene materials: a first-principles study

• Kamal Kumar,
• Nora H. de Leeuw,
• Jost Adam and
• Abhishek Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 1440–1452, doi:10.3762/bjnano.15.116

• engineering can be achieved through different techniques like (i) doping, where the introduction of dopants or impurities modifies the EBS [21], (ii) strain engineering by inserting mechanical strain to alter the electronic properties [22][23], and (iii) defect engineering [24]. Among these techniques, strain

Lithium niobate on insulator: an emerging nanophotonic crystal for optimized light control

• Midhun Murali,
• Amit Banerjee and
• Tanmoy Basu

Beilstein J. Nanotechnol. 2024, 15, 1415–1426, doi:10.3762/bjnano.15.114

• . Jamshidi-Ghaleh et al. investigated the behavior of the LN defect layer in MgF2/Ag/TiO2-based one-dimensional ternary photonic crystal (1DTPC). A voltage-dependent defect mode, arising from the electro-optic characteristics of LN, emerges inside the bandgap of the ternary photonic crystal. The localized

• parametric down-conversion and four-wave mixing. Recent research explores LiNbO3 as a defect layer in 1D PhC for manipulating quantum light in integrated photonic circuits [32], opening up potential applications in quantum computing, quantum photonics, and quantum communication [64][65][66][67][68]. In

Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

• The-Long Phan,
• Le Viet Cuong,
• Vu Dinh Lam and
• Ngoc Toan Dang

Beilstein J. Nanotechnol. 2024, 15, 1390–1399, doi:10.3762/bjnano.15.112

• . Depending on the morphology and crystal quality, their photoluminescence spectra have only a strong UV emission associated with the exciton radiative recombination, or both UV and defect-related visible emissions with their relative intensity ratio varying with the excitation power density. The obtained

• quality [65]. By changing the excitation density, the intensity ratio of these two emissions could also be changed, as illustrated in Figure 9b and its inset for the case of nanorods R2. In these samples, after laser excitation, the exciton-related UV emission is partially absorbed by defect centres

• occupying lower energy levels in the forbidden region. Different from the samples belonging to the first group, defects are insignificant due to their good crystal quality. Their exciton-related UV emission is not massively absorbed by defect centres playing a role as carrier traps, and always give a strong

Quantum-to-classical modeling of monolayer Ge₂Se₂ and its application in photovoltaic devices

• Anup Shrivastava,
• Shivani Saini,
• Dolly Kumari,
• Sanjai Singh and
• Jost Adam

Beilstein J. Nanotechnol. 2024, 15, 1153–1169, doi:10.3762/bjnano.15.94

• resistance and higher losses [59]. We set the optimal absorber thickness at 2 µm, above which the parameter variation was only very little. Effect of defects in the absorber layer Halide pervoskites are generally considered as defect-resilient; yet, deep level defects shows significant impact on the device

• performance [60][61]. Therefore, it is important to analyze their impact on the cell performance for better device design. Figure 7d shows the variation of the cell parameters at varying absorber defect densities from 1014 cm−3 to 1018 cm−3. Figure 7d shows that higher defect densities lead to worse device

• performance. This is due to the decrement in the lifetime of the charge carriers because of the shorter diffusion length, which results from the higher defect densities [62]. We can observed that the performance parameters decrease significantly above defect densities of 1015 cm−3. Effect of interface defects

Effect of wavelength and liquid on formation of Ag, Au, Ag/Au nanoparticles via picosecond laser ablation and SERS-based detection of DMMP

• Sree Satya Bharati Moram,
• Chandu Byram and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1054–1069, doi:10.3762/bjnano.15.86

• ) laser melting in liquid (LML), and (iii) laser defect engineering in liquid (LDL) [16]. In our previous work, we fabricated Ag–Cu alloy NPs using the femtosecond (fs) laser irradiation approach [17]. Similarly, Ag/Au alloy NPs were fabricated by laser ablation of single metal targets in water followed

Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

• Yasameen Al-Mafrachi,
• Sandeep Yadav,
• Sascha Preu,
• Jörg J. Schneider and
• Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

• the carbon nanotubes, while the D- and 2D-band peaks are the defect band peak and its first overtone, respectively. At lower wavenumbers, RBM peaks are seen. Their appearance symbolizes the presence of few-layer CNTs (single or double layer). Compared to SWCNTs [8], for which the characteristic

Beyond biomimicry – next generation applications of bioinspired adhesives from microfluidics to composites

• Dan Sameoto

Beilstein J. Nanotechnol. 2024, 15, 965–976, doi:10.3762/bjnano.15.79

• single sheet. A deliberate defect to yield anisotropic adhesion was described in 2013 by my student Walid bin Khaled [25]. It has been thoroughly characterized in various papers, including his work and that of visiting student Yue Wang, who collaborated with me between 2015 and 2016 [27]. Yue Wang also

• developed the adhesion circle test system, which has been instrumental in characterizing how these fibers with the deliberate defect function, demonstrating that the same geometry with different structural materials can exhibit vastly different adhesion properties [28]. Generally, structural materials for

Electrospun nanofibers: building blocks for the repair of bone tissue

• Tuğrul Mert Serim,
• Gülin Amasya,
• Tuğba Eren-Böncü,
• Ceyda Tuba Şengel-Türk and
• Ayşe Nurten Özdemir

Beilstein J. Nanotechnol. 2024, 15, 941–953, doi:10.3762/bjnano.15.77

• solution from the needle tip to be higher than the rate required for Taylor cone formation [49][50]. Thus, it may cause multiple jets or destabilization of the Taylor cone, resulting in an increase in bead defect density [49][51][52]. The fiber diameter decreases with increasing voltage [53]. The bead

• defect density increases above a critical voltage [49]. The aspect ratio of the obtained beads increases up to a certain voltage value and then decreases [50][54]. Flow rate Insufficient flow rate does not allow for jet formation. In contrast, excessive flow rates will cause an increase in the polymer

Effects of cutting tool geometry on material removal of a gradient nanograined CoCrNi medium entropy alloy

• Yu-Sheng Lu,
• Yu-Xuan Hung,
• Thi-Xuyen Bui and
• Te-Hua Fang

Beilstein J. Nanotechnol. 2024, 15, 925–940, doi:10.3762/bjnano.15.76

• mechanism of the material is very sensitive to the presence of defects [23]. For specimens in the range of 0.1–100 µm, the formation of voids at grain boundaries is the dominant defect and significantly affects the deformation behavior of the material. In contrast, voids seem negligible when the scale is

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• properties of these layers and to attain the desired parameters in the final product. Controlled thermal treatment serves various purposes, such as enabling crystal structure relaxation, defect reduction, and enhancement of the films’ crystalline arrangement. Furthermore, it can lead to improved electrical

Laser synthesis of nanoparticles in organic solvents – products, reactions, and perspectives

• Theo Fromme,
• Sven Reichenberger,
• Katharine M. Tibbetts and
• Stephan Barcikowski

Beilstein J. Nanotechnol. 2024, 15, 638–663, doi:10.3762/bjnano.15.54

Aero-ZnS prepared by physical vapor transport on three-dimensional networks of sacrificial ZnO microtetrapods

• Veaceslav Ursaki,
• Tudor Braniste,
• Victor Zalamai,
• Emil Rusu,
• Vladimir Ciobanu,
• Vadim Morari,
• Daniel Podgornii,
• Pier Carlo Ricci,
• Rainer Adelung and
• Ion Tiginyanu

Beilstein J. Nanotechnol. 2024, 15, 490–499, doi:10.3762/bjnano.15.44

• region at 3.62 eV is related to a free-to-bound electron transition from a shallow donor to the valence band of ZnS [35]. The other two bands around 2.4 and 2.9–3.0 eV in the deep level defect region are the most common PL bands observed in various ZnS samples and have been associated with DA pair

• indicated by the XRD analysis discussed above. A possible scheme of deep energy levels and electronic transitions accounting for the observed PL band in the deep level defect region for the ZnS component of the prepared aeromaterial is proposed in Figure 8. It includes a donor impurity band situated around

• (c, d) are with logarithmic axes. Results of the WPPF weight fraction analysis performed for the sample produced in the 8 h technological procedure. PL spectra of samples prepared in (a) the 4 h procedure and (b) the 8 h procedure measured in the deep level defect region at different temperatures

Unveiling the nature of atomic defects in graphene on a metal surface

• Karl Rothe,
• Nicolas Néel and
• Jörg Kröger

Beilstein J. Nanotechnol. 2024, 15, 416–425, doi:10.3762/bjnano.15.37

• smallest defects appear as a depression without discernible interior structure suggesting the presence of vacancy sites in the graphene lattice. With an atomic force microscope, however, only one kind can be identified as a vacancy defect with four missing carbon atoms, while the other kind reveals an

• intact graphene sheet. Spatially resolved spectroscopy of the differential conductance and the measurement of total-force variations as a function of the lateral and vertical probe–defect distance corroborate the different character of the defects. The tendency of the vacancy defect to form a chemical

• by noble-gas ion irradiation [6][13][14][17][19][21][24], represents an opportunity for systematic defect studies. The work presented here was stimulated by the lack of experimental data on the actual geometry of atomic-scale defects in graphene. So far, scanning tunneling microscope (STM

Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• photoluminescence spectroscopy. Stupp et al. [14] have explored possible applications of self-assembly of biomolecules with controlled stereochemistry in materials technology. However, the fundamental reasoning behind how this self-organization process evolves in terms of defect creation or damage still needs to be

• to analyse the crystal structure and to locate interstitial atoms within the array of target atoms. The relation between yield and defect concentration was derived by Bøgh [33]. It provides information about the depth distribution of defects in the first few microns beneath the crystalline surface

• observed for Si. This further confirms that the near surface region of Si, amorphized to form better ripple patterns in Si as compared to Ge, may be due to the overlap of the collision cascade which led to more defect formation [41]. Rutherford backscattering results The RBS technique was used to determine

Controllable physicochemical properties of WO_x thin films grown under glancing angle

• Rupam Mandal,
• Aparajita Mandal,
• Alapan Dutta,
• Rengasamy Sivakumar,
• Sanjeev Kumar Srivastava and
• Tapobrata Som

Beilstein J. Nanotechnol. 2024, 15, 350–359, doi:10.3762/bjnano.15.31

• optical bandgap and work function is thoroughly investigated by employing various spectroscopic and microscopic techniques. The systematic investigation of the work function of the films reveals a distinct trend with thickness, originating from the thickness-dependent defect concentration within the films

• . It is observed that the as-deposited NS-WOx/p-Si heterostructures are quasi-ohmic in nature. The annealed counterparts exhibit a relatively higher rectification, which points towards a possible defect-dependent Fermi level pinning at the hetero-interface. Overall, our systematic experimental

• variability in bandgap energies, we recall that the optical bandgap of this class of materials is a function of defect density and stoichiometric composition, which is mainly governed by the OV concentration within the films [39][40]. To probe any possible variation in OV concentration and stoichiometry

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• symmetry for a monolayer (A1g for bulk). These modes are located around 385 and 405 cm−1, respectively, in neutral and defect-free MoS2 monolayers [33][34]. More precisely, in MoS2 multilayers, the symmetries of these phonon modes are E′ and A′1 for an odd number of layers, and Eg and A1g for an even

• lateral size of typically 50 nm, i.e., well below the laser spot size) with possibly a distribution of thicknesses and twist angles between adjacent layers of multilayer domains and a higher number of defects (the average inter-defect distance ranges from 3 to 6 nm as estimated from the LA and A1g

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• interfaces. While we demonstrate here that the trimming of individual DNA nanostructures within the lattice is possible, the collective response of the lattice and defect formation as a response to ion impact represents an interesting direction for future studies. The processes leading to height modification

unDrift: A versatile software for fast offline SPM image drift correction

• Tobias Dickbreder,
• Franziska Sabath,
• Lukas Höltkemeier,
• Ralf Bechstein and
• Angelika Kühnle

Beilstein J. Nanotechnol. 2023, 14, 1225–1237, doi:10.3762/bjnano.14.101

• images. It is apparent that the defect positions are shifted in the second image compared to the first one. (c) Image of the cross-correlation function RXY between the images shown in (a) and (b). The center of the image and the position of the maximum are marked with red dots and connected with a red

Density functional theory study of Au-fcc/Ge and Au-hcp/Ge interfaces

• Olga Sikora,
• Małgorzata Sternik,
• Benedykt R. Jany,
• Franciszek Krok,
• Przemysław Piekarz and
• Andrzej M. Oleś

Beilstein J. Nanotechnol. 2023, 14, 1093–1105, doi:10.3762/bjnano.14.90

• variant by introducing defects into the interface layer. We investigated three supercells of variant D, in which some pairs of Au atoms in the interface layer were replaced by Ge atoms. Their optimized atomic arrangements are presented in Figure 7b–d. We can observe that while one such defect, shown in

• optimized supercell shown in Figure 9d, the interface energy is slightly higher (0.395 J/m2) than that of the defect-free junction. We also tested another type of defects (Au vacancies). To construct the supercell, we first found the position of slabs with the smallest possible Au–Ge distances (two such

• pairs per interface can be found) and removed the Au atoms from these bonds. The optimized lattice preserves the hexagonal arrangement; however, the interface energy is significantly higher than in the other considered hcp variants (0.514 J/m2). Figure 9e shows the experimental picture and the defect