An implementation of spin–orbit coupling for band structure calculations with Gaussian basis sets: Two-dimensional topological crystals of Sb and Bi

• Sahar Pakdel,
• Mahdi Pourfath and
• J. J. Palacios

Beilstein J. Nanotechnol. 2018, 9, 1015–1023, doi:10.3762/bjnano.9.94

• those expectations closer to reality [33]. It was demonstrated that it is possible to isolate few or even single stable layers of antimonene, in ambient conditions. Moreover, new procedures such as liquid exfoliation and epitaxial growth methods were reported. Theoretical works on antimonene can be

Kinetics of solvent supported tubule formation of Lotus (Nelumbo nucifera) wax on highly oriented pyrolytic graphite (HOPG) investigated by atomic force microscopy

• Sujit Kumar Dora,
• Kerstin Koch,
• Wilhelm Barthlott and
• Klaus Wandelt

Beilstein J. Nanotechnol. 2018, 9, 468–481, doi:10.3762/bjnano.9.45

• studying the epitaxial growth of organic molecules with aliphatic chains on HOPG which occurs due to the perfectly-matched interatomic distances in the molecules and the HOPG substrate. Watel and coworkers have demonstrated for long chain alkanes a parallel orientation of the carbon skeleton with respect

• to HOPG surface [29]. Further, epitaxial growth of paraffin waxes on organic crystals also resulted in a parallel orientation of these waxes on organic crystals [30][31]. Additionally, the presence of free standing dangling bonds at the step edges of an HOPG substrate surface [32][33] could also

• influence the tubule orientation. The term epitaxial growth is however restricted to first few grown layers of crystal on the substrates. On the other hand, the tubules observed in our experiments were formed on an instantaneously solidified thin wax film (containing both tubule and non-tubule forming waxes

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• properties of intermediate-to-high Mg doping levels are scarce in the literature, with more relevance placed on the optical properties. The envisaged applications of GaAs nanowires depend on the use of substrates with different compositions and orientations. The epitaxial growth of GaAs on Si substrates is

Synthesis and functionalization of NaGdF₄:Yb,Er@NaGdF₄ core–shell nanoparticles for possible application as multimodal contrast agents

• Dovile Baziulyte-Paulaviciene,
• Vitalijus Karabanovas,
• Marius Stasys,
• Greta Jarockyte,
• Vilius Poderys,
• Simas Sakirzanovas and
• Ricardas Rotomskis

Beilstein J. Nanotechnol. 2017, 8, 1815–1824, doi:10.3762/bjnano.8.183

• ultrasmall core and core–shell UCNPs were synthesized via a thermal decomposition method. Furthermore, it was shown that the epitaxial growth of a NaGdF4 optical inert layer covering the NaGdF4:Yb,Er core effectively minimizes surface quenching due to the spatial isolation of the core from the surroundings

Adsorption and diffusion characteristics of lithium on hydrogenated α- and β-silicene

• Fadil Iyikanat,
• Ali Kandemir,
• Cihan Bacaksiz and
• Hasan Sahin

Beilstein J. Nanotechnol. 2017, 8, 1742–1748, doi:10.3762/bjnano.8.175

• , silicene exhibits a low-buckled structure. Although bulk silicon does not have a layered structure, syntheses of a 2D form of silicon via epitaxial growth on several metal substrates such as Ag(111) [5][20], Ir(111) [21], and ZrB2(0001) [22] were achieved. By performing ab initio calculations, Liu et al

• . predicted that the electronic properties of silicene highly depend on the substrate [23]. Johnson et al. showed that the Ag(111) surface leads to metalization of a few distinct forms of silicene [24]. Among the variety of substrates, Ag(111) surface comes to prominence for epitaxial growth of single-layer

Triptycene-terminated thiolate and selenolate monolayers on Au(111)

• Jinxuan Liu,
• Martin Kind,
• Björn Schüpbach,
• Daniel Käfer,
• Stefanie Winkler,
• Wenhua Zhang,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2017, 8, 892–905, doi:10.3762/bjnano.8.91

• identified to be an important parameter in SURMOF liquid epitaxial growth [3][21]. The higher thermal stability of the selenium anchor group compared to the one of the sulfur anchor group enables triptycene-selenolate SAMs to push the upper temperature limit available for SURMOF growth. We believe that these

Synthesis of graphene–transition metal oxide hybrid nanoparticles and their application in various fields

• Arpita Jana,
• Elke Scheer and
• Sebastian Polarz

Beilstein J. Nanotechnol. 2017, 8, 688–714, doi:10.3762/bjnano.8.74

• graphene from graphite by micromechanical cleavage [1]. Later, graphene was prepared in bulk from graphite utilising various approaches, including micromechanical exfoliation of pyrolytic graphite [31][32][33] (the scotch tape method), epitaxial growth [34], chemical vapour deposition (CVD) [35][36], and

• (Figure 1). Bottom-up growth of graphene includes micromechanical exfoliation of bulk graphite. The processes included in the bottom-up synthesis of graphene are CVD [39][40], arc discharge [41], and epitaxial growth [42]. Using CVD, graphene and few-layer graphene have been grown on catalytic metal

In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS₂ in O₂-controlled atmosphere

• Aurora Piazza,
• Filippo Giannazzo,
• Gianpiero Buscarino,
• Gabriele Fisichella,
• Antonino La Magna,
• Fabrizio Roccaforte,
• Marco Cannas,
• Franco Mario Gelardi and
• Simonpietro Agnello

Beilstein J. Nanotechnol. 2017, 8, 418–424, doi:10.3762/bjnano.8.44

• availability of Gr paved the way for studies and applications in many fields of materials science and technology including optics, electronics, and photovoltaics [5][6]. In these contexts, different growth processes optimized to obtain large area-samples, comprising epitaxial growth on silicon carbide [7][8

Zigzag phosphorene nanoribbons: one-dimensional resonant channels in two-dimensional atomic crystals

• Carlos. J. Páez,
• Dario. A. Bahamon,
• Ana L. C. Pereira and
• Peter. A. Schulz

Beilstein J. Nanotechnol. 2016, 7, 1983–1990, doi:10.3762/bjnano.7.189

• materials; constrictions; edge states; phosphorene nanoribbons; quantum dots; Introduction Low-dimensional systems have attracted attention over the past fifty years since the development of semiconductor epitaxial growth and deposition of metallic thin films [1]. The early scenario, back in the 1960s, as

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

• Ann-Kathrin Kleinschmidt,
• Lars Barzen,
• Johannes Strassner,
• Christoph Doering,
• Henning Fouckhardt,
• Wolfgang Bock,
• Michael Wahl and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2016, 7, 1783–1793, doi:10.3762/bjnano.7.171

• an established powerful method to monitor the epitaxial growth of monocrystalline semiconductor layers in situ [6][7] – for instance for molecular beam epitaxy (MBE). The RAS technique employs reflectometric as well as interferometric information, based on the difference in optical surface

• ], known from various studies on epitaxial growth, or on surface roughness due to ion bombardment [9][39][40][41]. Also, information on the composition of compound semiconductors [1] as well as the doping of the etched layers (related to the offset/mean value of the Fabry–Perot oscillations) are included

• spectra will not be clearly characteristic of the etch front. Details on the determination of the optimum gas parameters, especially for etching GaAs and Al0.5Ga0.5As, and on the influence of the plasma gas composition on RAS can be found in [9]. To monitor the same samples both during their epitaxial

Orientation of FePt nanoparticles on top of a-SiO₂/Si(001), MgO(001) and sapphire(0001): effect of thermal treatments and influence of substrate and particle size

• Martin Schilling,
• Paul Ziemann,
• Zaoli Zhang,
• Johannes Biskupek,
• Ute Kaiser and
• Ulf Wiedwald

Beilstein J. Nanotechnol. 2016, 7, 591–604, doi:10.3762/bjnano.7.52

• particles on MgO(001), the observed cube-on-cube growth mode appears plausible due to the 9% lattice mismatch between the two systems leading to pseudo-epitaxial growth with 11 FePt lattice parameters fitting well onto 10 lattice units of a MgO(001) substrate [20]. RHEED measurements are first performed on

Synthesis and applications of carbon nanomaterials for energy generation and storage

• Marco Notarianni,
• Jinzhang Liu,
• Kristy Vernon and
• Nunzio Motta

Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17

• applications. However, the breakthrough that would make this technology viable for large scale production would be to develop a low temperature CVD process (e.g., plasma-enhanced CVD) that could produce large area, high quality graphene on any type of substrate. Epitaxial growth on SiC. Graphene growth on

Inorganic Janus particles for biomedical applications

• Isabel Schick,
• Steffen Lorenz,
• Dominik Gehrig,
• Stefan Tenzer,
• Wiebke Storck,
• Karl Fischer,
• Dennis Strand,
• Frédéric Laquai and
• Wolfgang Tremel

Beilstein J. Nanotechnol. 2014, 5, 2346–2362, doi:10.3762/bjnano.5.244

• material combinations where epitaxial growth is possible [7][60]. In order to create hetero-nanoparticles, it is crucial to suppress homogeneous nucleation of the second (or third) component as competitive reaction to heterogeneous nucleation on the preformed or in situ formed seeds. Following classical

• and the overgrown particles has to be negative, as given for epitaxial growth [56][60]. Lattice mismatch is not only responsible for the preference of a hetero-nanostructure, it also controls the product morphology through the extent of lattice mismatch. Nucleation and epitaxial growth is non

Hybrid spin-crossover nanostructures

• Carlos M. Quintero,
• Gautier Félix,
• Iurii Suleimanov,
• José Sánchez Costa,
• Gábor Molnár,
• Lionel Salmon,
• William Nicolazzi and
• Azzedine Bousseksou

Beilstein J. Nanotechnol. 2014, 5, 2230–2239, doi:10.3762/bjnano.5.232

• core–multishell NPs contains two active magnetic species. Catala and Mallah reported that it is possible to carry out epitaxial growth of a 3D PBA different from that used for the core in the case of 10 nm Cs[NiIICrIII(CN)6]@Cs[CoIICrIII(CN)6] heterostructures [19] or 50 nm CsI[CoIICrIII(CN)6]@CsI

Controlling the dispersion of supported polyoxometalate heterogeneous catalysts: impact of hybridization and the role of hydrophilicity–hydrophobicity balance and supramolecularity

• Gijo Raj,
• Colas Swalus,
• Eglantine Arendt,
• Pierre Eloy,
• Michel Devillers and
• Eric M. Gaigneaux

Beilstein J. Nanotechnol. 2014, 5, 1749–1759, doi:10.3762/bjnano.5.185

• the C–C bond length (0.251 nm), and the crystallographic <1120> HOPG spacing (0.246 nm) favours an epitaxial growth of alkyl chains on HOPG, oriented along the <1120> lattice direction [29]. In contrast, DODA form small island structures of 1.5 nm height on mica (Figure 3b). On the hydrophilic mica

• , e.g. through hydrophobic or hydrophilic interactions or through epitaxial growth. Supramolecular organization of DODA–POM hybrids In the following section, we discuss the supramolecular organization of DODA–POM hybrids deposited on different surfaces. Hybridization of POM and DODA is expected to be

Direct nanoscale observations of the coupled dissolution of calcite and dolomite and the precipitation of gypsum

• Francesco G. Offeddu,
• Jordi Cama,
• Josep M. Soler and
• Christine V. Putnis

Beilstein J. Nanotechnol. 2014, 5, 1245–1253, doi:10.3762/bjnano.5.138

• gypsum at the dolomite cleavage surfaces. Gypsum precipitation occurred on the previously etch pitted dolomite surface after about 6 h, and again it was difficult to establish an induction time. Epitaxial growth was observed to be non-uniform over the surface (Figure 8), taking place on preferential

• , as in acidic pH conditions calcite dissolution rates were faster than those of dolomite, gypsum precipitation was correspondingly faster in the calcite dissolution experiments. Epitaxial growth was the growth mechanism as observed by Booth et al. [18], and gypsum nucleation induction times were

Highly NO₂ sensitive caesium doped graphene oxide conductometric sensors

• Carlo Piloto,
• Marco Notarianni,
• Mahnaz Shafiei,
• Elena Taran,
• Dilini Galpaya,
• Cheng Yan and
• Nunzio Motta

Beilstein J. Nanotechnol. 2014, 5, 1073–1081, doi:10.3762/bjnano.5.120

• processes to make pristine graphene sheets, like chemical vapour deposition, epitaxial growth or mechanical exfoliation [30][31][32][33]. By dispersion and sonication of graphite oxide in aqueous solution or organic solvent, a colloidal suspension of GO sheets is produced. The density of oxygen functional

Encapsulation of nanoparticles into single-crystal ZnO nanorods and microrods

• Jinzhang Liu,
• Marco Notarianni,
• Llew Rintoul and
• Nunzio Motta

Beilstein J. Nanotechnol. 2014, 5, 485–493, doi:10.3762/bjnano.5.56

• . The fractured nanorod in Figure 4d reveals a nanobead entirely encapsulated into the nanorod. Growth mechanism The growth of ZnO in aqueous solution can be described as an epitaxial growth process. The precursors Zn(NO3)2 and HMTA in water lead to chemical reactions are as follows [20]: Hence, Zn2

• . The epitaxial growth continues and the hole gradually shrinks and finally closes, sealing the nanoparticle in crystal. Figure 5b is a 3D view of the encapsulation process. The top (0001) facet of ZnO nanorod is known to have the fastest growth rate, hence nanoparticles at the top face can be quickly

• are used as examples to study this process for nanoparticles with different sizes and shapes into ZnO nanorods grown in aqueous solution at low temperature. Our two-step aqueous epitaxial growth process results in the full encapsulation of 10 nm and 40 nm nanodiamonds. The same two-step process

Routes to rupture and folding of graphene on rough 6H-SiC(0001) and their identification

• M. Temmen,
• O. Ochedowski,
• B. Kleine Bussmann,
• M. Schleberger,
• M. Reichling and
• T. R. J. Bollmann

Beilstein J. Nanotechnol. 2013, 4, 625–631, doi:10.3762/bjnano.4.69

• various ways. The growth of graphene on metals followed by transfer to another substrate as well as epitaxial growth on SiC, both have a potential for mass production if technological shortcomings can be overcome. However, exfoliation from graphite still results in graphene flakes of highest quality [1][2

• ], which then can be modified in situ to create (twisted) FLG. In comparison to the well known epitaxial growth of graphene on SiC [12][13][14], here we study mechanically exfoliated graphene on 6H-SiC(0001) to produce large sheets of high quality. Defects are first created by swift heavy ions (SHI). The

Molecular-resolution imaging of pentacene on KCl(001)

• Julia L. Neff,
• Jan Götzen,
• Enhui Li,
• Michael Marz and
• Regina Hoffmann-Vogel

Beilstein J. Nanotechnol. 2012, 3, 186–191, doi:10.3762/bjnano.3.20

• ). At least for pattern I an alignment along the substrate directions is observed, hinting at epitaxial growth. This is in agreement with the point-on-line epitaxy suggested for thicker pentacene films in the thin-film and bulk phases [32][33]. Additionally, two kinds of defects were observed. For

Nanoscaled alloy formation from self-assembled elemental Co nanoparticles on top of Pt films

• Luyang Han,
• Ulf Wiedwald,
• Johannes Biskupek,
• Kai Fauth,
• Ute Kaiser and
• Paul Ziemann

Beilstein J. Nanotechnol. 2011, 2, 473–485, doi:10.3762/bjnano.2.51

• obtained with elevated substrate temperature TS during deposition. At TS = 600 °C epitaxial growth was obtained on MgO(100) or STO(100) substrates [18][19][20], whereas deposition at ambient temperature led to textured growth of Pt films. Pulsed laser deposition (PLD) produced a similar result for the Pt

• ) and (111) orientations were prepared on MgO(100) and STO(100) substrates by pulsed laser deposition. When deposited at elevated temperature (600 °C and above) epitaxial growth was achieved on STO(100) and MgO(100) with micron-sized atomically flat islands. When the deposition temperature was held at

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

• Thomas H. Loeber,
• Dirk Hoffmann and
• Henning Fouckhardt

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

• × 1010 cm−2 was achieved in the SK epitaxial growth mode, with a V/III flux ratio of 1/1 at a growth temperature of T = 527 °C and nominal coverage of 3 ML. With increasing V/III ratio the dot size also increased. Only one PL peak was detected, attributable to the quantum dot nature; no further peak

Recrystallization of tubules from natural lotus (Nelumbo nucifera) wax on a Au(111) surface

• Sujit Kumar Dora and
• Klaus Wandelt

Beilstein J. Nanotechnol. 2011, 2, 261–267, doi:10.3762/bjnano.2.30

• aliphatic chains results in epitaxial growth on HOPG due to their well matched atomic distances. For example, Watel et al. [24] have shown for long chain alkanes that the carbon skeleton lies parallel to the HOPG surface. On the other hand, epitaxial growth of long chain alkanes on Au(111) resulted in a

• vertical arrangement of the carbon skeleton [12] on the substrate. Similarly, Dorset et al. [25][26] have also demonstrated the unusual orientation of paraffin waxes by studying their epitaxial growth on organic crystals. It is important to note that epitaxial growth is limited to the first few layers