Nanotribology

• Enrico Gnecco,
• Susan Perkin,
• Andrea Vanossi and
• Ernst Meyer

Beilstein J. Nanotechnol. 2018, 9, 2330–2331, doi:10.3762/bjnano.9.217

• ., silicon oxide, are recognized. The quality of the surface condition is addressed experimentally by the example of cryogenically treated martensitic stainless steel [4] and theoretically by an analysis of the influence of micro-dimple textures on hydrodynamic lubrication [5]. On a more fundamental level

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• the substrate and to electrically activate these dopant atoms. Although this process sounds trivial, there are numerous issues that can arise and prevent the movement of the dopant into the target area. In the case of silicon doping the most prominent issue is the silicon oxide formation at the

• surface. Phosphorus diffuses through silicon oxide significantly slower than through silicon [16][17]. Although it has been shown that hydrogen-terminated silicon re-oxidizes relatively slowly when stored at room temperature in air [3], the elevated temperatures required for MLD processing carried out in

Friction force microscopy of tribochemistry and interfacial ageing for the SiO_x/Si/Au system

• Christiane Petzold,
• Marcus Koch and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2018, 9, 1647–1658, doi:10.3762/bjnano.9.157

• Si tip apex after sliding contact with silicon oxide in air and vacuum has been reported before [29][30][31] and was confirmed here for sliding contacts in UHV by TEM analysis of the tip. The thickness of the amorphous layer on our tip was in the same range as described for scratching experiments on

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH4 and O2 can be used

• , which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current

• recombination of excitons and ranges from 5 to 8 ps without differences between doped or undoped samples. We conclude that no measurable initial carrier densities exist at room temperatures in P- or B-doped Si NCs in silicon oxide matrix. The TT-results are presented for both H2-passivated and unpassivated

Nanoporous silicon nitride-based membranes of controlled pore size, shape and areal density: Fabrication as well as electrophoretic and molecular filtering characterization

• Axel Seidenstücker,
• Stefan Beirle,
• Fabian Enderle,
• Paul Ziemann,
• Othmar Marti and
• Alfred Plettl

Beilstein J. Nanotechnol. 2018, 9, 1390–1398, doi:10.3762/bjnano.9.131

• -defined Au nanoparticles (NPs) exhibiting a high degree of hexagonal order as obtained in a first step by a proven micellar approach. These NP arrays serve as masks in a second reactive ion etching (RIE) step optimized for etching Si and some important Si compounds (silicon oxide, silicon nitride) on the

• membrane. Experimental details are summarized in Table S1 in Supporting Information File 1. First, in Figure 1a an approximately 55 nm thick sacrificial layer of silicon oxide is deposited on top of the SiN membrane by electron beam physical vapor deposition (EBPVD). After that, Au NPs (typical diameter ca

• . 12 nm) are deposited on the silicon oxide layer with a quasi-hexagonal order by self-organization. This is realized by dip-coating from a solution of Au salt-loaded PS–P2VP diblock copolymer micelles directly on the upper membrane face (coating is done without preceding deposition of appropriate

Electro-optical interfacial effects on a graphene/π-conjugated organic semiconductor hybrid system

• Karolline A. S. Araujo,
• Luiz A. Cury,
• Matheus J. S. Matos,
• Thales F. D. Fernandes,
• Luiz G. Cançado and
• Bernardo R. A. Neves

Beilstein J. Nanotechnol. 2018, 9, 963–974, doi:10.3762/bjnano.9.90

• applications. Results and Discussion The first goal of this work was to investigate whether interfacial interactions could lead to the formation of an organized RA 2D monolayer-type film on a supporting substrate. Standard smooth substrates like mica, silicon oxide (SiOx) on Si, graphene and graphite

BN/Ag hybrid nanomaterials with petal-like surfaces as catalysts and antibacterial agents

• Konstantin L. Firestein,
• Denis V. Leybo,
• Alexander E. Steinman,
• Andrey M. Kovalskii,
• Andrei T. Matveev,
• Anton M. Manakhov,
• Irina V. Sukhorukova,
• Pavel V. Slukin,
• Nadezda K. Fursova,
• Sergey G. Ignatov,
• Dmitri V. Golberg and
• Dmitry V. Shtansky

Beilstein J. Nanotechnol. 2018, 9, 250–261, doi:10.3762/bjnano.9.27

• groups [24]. The formation of silicon oxide can be explained by a chemical reaction between the molten B2O3 phase in the BN/Ag HNMs and the quartz pellets. In addition, the UV BN/Ag sample revealed absorption bands within the 500–700 cm−1 range (Figure 6, spectrum 4), which can be ascribed to the

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• ) formation of a GaN shell over the NW template (e.g., ZnO) followed by the template NW removal [14]; 3) selective area molecular beam epitaxy (MBE) growth of GaN on sapphire (111) substrates over titanium mask [15]; and 4) MBE deposition of GaN on Si(111) substrates covered by a silicon oxide layer in the

• dedicated to the study of Si-doped GaN NWs and NT-like structure synthesis on Si(111) substrates by means of plasma-assisted molecular beam epitaxy in N-rich conditions. We investigated the impact of the silicon oxide layer, substrate temperature and gallium flux on the NW formation. To the best of our

• /h on a substrate that underwent low-temperature (850 °C) annealing. It should be mentioned that in this case a silicon oxide layer covering the substrate was removed only partially or was not removed at all. This conclusion is based on the analysis of in situ reflection high-energy electron

A robust AFM-based method for locally measuring the elasticity of samples

• Alexandre Bubendorf,
• Stefan Walheim,
• Thomas Schimmel and
• Ernst Meyer

Beilstein J. Nanotechnol. 2018, 9, 1–10, doi:10.3762/bjnano.9.1

• -density polyethylene) and a self-assembled monolayer of 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS) on a silicon oxide substrate perforated with circular holes prepared by polymer blend lithography. For all samples the relation was evidenced by recording Δf1, Δf2 and FN as a function of the Z

• ) of 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS) on a silicon oxide (SiOx) substrate were investigated. The SAM was prepared with circular holes obtained by polymer blend lithography (PBL) [24]. A reference sample consisting of polytetrafluoroethylene (PTFE), commonly called Teflon, with a nominal

Strategy to discover full-length amyloid-beta peptide ligands using high-efficiency microarray technology

• Clelia Galati,
• Natalia Spinella,
• Lucio Renna,
• Danilo Milardi,
• Francesco Attanasio,
• Michele Francesco Maria Sciacca and
• Corrado Bongiorno

Beilstein J. Nanotechnol. 2017, 8, 2446–2453, doi:10.3762/bjnano.8.243

• sensitivity; peptide; silicon oxide; TEM; Introduction According to the World Health Organization (WHO), the number of people living with Alzheimer’s disease (AD) worldwide is now greater than 47 million, and this number is expected to grow to 75 million by 2030. Alzheimer’s disease leads to nerve-cell death

• neurodegenerative disorders can be evaluated. Prior to assay development, Aβ40 aggregation was evaluated by transmission electron microscopy (TEM) and binding conditions of the peptides under investigation were optimized on the coated silicon oxide surface. Finally, incubation tests between oligopeptides and

• controlled rate in order to reproducibly grow layers of silicon oxide of a defined thickness. Thermal growth allows high-quality SiO2 films to be obtained with very low auto-fluorescence and very low contamination. The wafers were then cut in pieces to the exact dimensions of conventional microscope slides

Electron beam induced deposition of silacyclohexane and dichlorosilacyclohexane: the role of dissociative ionization and dissociative electron attachment in the deposition process

• Ragesh Kumar T P,
• Sangeetha Hari,
• Krishna K Damodaran,
• Oddur Ingólfsson and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2017, 8, 2376–2388, doi:10.3762/bjnano.8.237

• Si/O ratio from DCSCH is 1/2.4 indicating a complete oxidation to SiO2. For SCH this ratio is only 1/1.2 indicating a much more incomplete oxidation. Silicon chlorides are generally very sensitive towards hydrolysis leading to the formation of silicon oxide and hydrochloric acid. We thus anticipate

Advances and challenges in the field of plasma polymer nanoparticles

• Andrei Choukourov,
• Pavel Pleskunov,
• Daniil Nikitin,
• Valerii Titov,
• Artem Shelemin,
• Mykhailo Vaidulych,
• Anna Kuzminova,
• Pavel Solař,
• Jan Hanuš,
• Jaroslav Kousal,
• Ondřej Kylián,
• Danka Slavínská and
• Hynek Biederman

Beilstein J. Nanotechnol. 2017, 8, 2002–2014, doi:10.3762/bjnano.8.200

• oxides whereas siloxane moieties tend to adsorb on surfaces and form silicon oxide coatings. The amount of added oxygen determines the chemical composition of the coatings. The same paradigm can be adapted for the synthesis of NPs in the configuration of GAS [53]. Plasma polymerization can be performed

Identifying the nature of surface chemical modification for directed self-assembly of block copolymers

• Laura Evangelio,
• Federico Gramazio,
• Matteo Lorenzoni,
• Michaela Gorgoi,
• Francisco Miguel Espinosa,
• Ricardo García,
• Francesc Pérez-Murano and
• Jordi Fraxedas

Beilstein J. Nanotechnol. 2017, 8, 1972–1981, doi:10.3762/bjnano.8.198

• oxide between the brush layer and the SiO2/Si substrate. Experimental Preparation and chemical modification of brush layers The starting substrates were <100> silicon wafers (p-type silicon of 4–40 Ω·cm resistivity) with a native silicon oxide layer on top. A thin film of hydroxyl-terminated polystyrene

Intercalation of Si between MoS₂ layers

• Rik van Bremen,
• Qirong Yao,
• Soumya Banerjee,
• Deniz Cakir,
• Nuri Oncel and
• Harold J. W. Zandvliet

Beilstein J. Nanotechnol. 2017, 8, 1952–1960, doi:10.3762/bjnano.8.196

• of the involved elements, i.e., Mo/S/Si and O [64]. In addition, after the deposition of Si no significant changes in the FWHM of the peaks of Mo (0.97 before, 1.13 after) as well as of S (1.09 before, 1.21 after) were observed, indicating that no chemical reaction between MoS2 and silicon oxide has

α-Silicene as oxidation-resistant ultra-thin coating material

• Ali Kandemir,
• Fadil Iyikanat,
• Cihan Bacaksiz and
• Hasan Sahin

Beilstein J. Nanotechnol. 2017, 8, 1808–1814, doi:10.3762/bjnano.8.182

• observed. The difference of those two minimum-energy states is similar (Table 1). In addition, oxidized silicene does not allow for a further indentation of a single oxygen atom. The locally forming silicon oxide structure attracts oxygen atoms more strongly. A local-minimum state as in FigureFigure 5 is

• silicene on metal substrates. One may claim that silicene retains its extreme reactivity to oxygen atoms even after forming localized silicon-oxide structures. As a result, silicene has great potential to capture unwanted atoms and to protect the metal surface. Conclusions In this study, we performed first

Nanoantenna-assisted plasmonic enhancement of IR absorption of vibrational modes of organic molecules

• Alexander G. Milekhin,
• Olga Cherkasova,
• Sergei A. Kuznetsov,
• Ilya A. Milekhin,
• Ekatherina E. Rodyakina,
• Alexander V. Latyshev,
• Sreetama Banerjee,
• Georgeta Salvan and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2017, 8, 975–981, doi:10.3762/bjnano.8.99

• from natural silicon oxide covering the Si substrate [33]. The deposition of thin CoPc films on the nanoantenna arrays leads to intensity enhancement for the vibrational modes at 724 and 755 cm−1, which are inherent to CoPc in the spectral range of the LSPR band. Note that for the 3 nm thick CoPc film

Anodization-based process for the fabrication of all niobium nitride Josephson junction structures

• Massimiliano Lucci,
• Ivano Ottaviani,
• Matteo Cirillo,
• Fabio De Matteis,
• Roberto Francini,
• Vittorio Merlo and
• Ivan Davoli

Beilstein J. Nanotechnol. 2017, 8, 539–546, doi:10.3762/bjnano.8.58

• the superconductive films grown over “cold” amorphous silicon oxide. Improvements of this recipe could substantially enhance the ease of fabrication and lead to noticeable progress in the scientific and technical usefulness of all-NbN tunneling devices. Conclusion A viable method to optically monitor

Methods for preparing polymer-decorated single exchange-biased magnetic nanoparticles for application in flexible polymer-based films

• Laurence Ourry,
• Delphine Toulemon,
• Souad Ammar and
• Fayna Mammeri

Beilstein J. Nanotechnol. 2017, 8, 408–417, doi:10.3762/bjnano.8.43

• applications. Phosphates and phosphonates are suitable for functionalizing iron and silicon oxide surfaces [29][30] through covalent bonds, in mono-, bi- or tridentate modes; but to date, they have not been used for cobalt oxide and ferrite surfaces. In the case of PMMA, we followed two routes: the first one

Colorimetric gas detection by the varying thickness of a thin film of ultrasmall PTSA-coated TiO₂ nanoparticles on a Si substrate

• Urmas Joost,
• Andris Šutka,
• Meeri Visnapuu,
• Aile Tamm,
• Meeri Lembinen,
• Mikk Antsov,
• Kathriin Utt,
• Krisjanis Smits,
• Ergo Nõmmiste and
• Vambola Kisand

Beilstein J. Nanotechnol. 2017, 8, 229–236, doi:10.3762/bjnano.8.25

• films were examined in air under ambient conditions. The optical constants given here are those measured at 633 nm wavelength. Using ellipsometry, the refractive index of the film was modelled between 1.2–4.5 eV at a wavelength of 633 nm. The three-layer stack (silicon substrate/silicon oxide/TiO2 film

Influence of hydrofluoric acid treatment on electroless deposition of Au clusters

• Rachela G. Milazzo,
• Antonio M. Mio,
• Giuseppe D’Arrigo,
• Emanuele Smecca,
• Alessandra Alberti,
• Gabriele Fisichella,
• Filippo Giannazzo,
• Corrado Spinella and
• Emanuele Rimini

Beilstein J. Nanotechnol. 2017, 8, 183–189, doi:10.3762/bjnano.8.19

• that the HF dissolves the silicon oxide layer formed on top of the thin flat clusters and promotes the partial atomic rearrangement of the layered gold atoms, driven by a reduction of the surface energy. The X-ray diffraction investigation indicated changes in the crystalline orientation of the flat

Localized surface plasmons in structures with linear Au nanoantennas on a SiO₂/Si surface

• Ilya A. Milekhin,
• Sergei A. Kuznetsov,
• Ekaterina E. Rodyakina,
• Alexander G. Milekhin,
• Alexander V. Latyshev and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2016, 7, 1519–1526, doi:10.3762/bjnano.7.145

• fabricated on a 3 nm thick natural silicon oxide layer. This phenomenon is interpreted in terms of the coupling between the antenna's, plasmon resonance and surface phonon–polariton excitations [26]. Similar results were obtained for a thermal SiO2 layer having the thickness of 106 nm, for which the SO

• are presented in Figure 6. As one can see from the figure, the IR spectrum of the structure with the thickness of a natural silicon oxide layer of 0.8 nm reveals a pronounced minimum at 700 cm−1 corresponding to the LSPR mode. A weaker feature located between the TO (1075 cm−1) and LO (1250 cm−1

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

• Siti Noorhaniah Yusoh and
• Khatijah Aisha Yaacob

Beilstein J. Nanotechnol. 2016, 7, 1461–1470, doi:10.3762/bjnano.7.138

• out using FESEM and EDX. Pattern of silicon oxide nanowire with left and right square pads prior to etching. AFM images of silicon nanowire after wet etching using (a) 25 wt % TMAH (b) 25 wt % TMAH with 10 vol % IPA (c) 25 wt % TMAH with 20 vol % IPA (d) 25 wt% TMAH with 30 vol % IPA at 65 °C for 30 s

Polystyrene-block-poly(ethylene oxide) copolymers as templates for stacked, spherical large-mesopore silica coatings: dependence of silica pore size on the PS/PEO ratio

• Roberto Nisticò,
• Giuliana Magnacca,
• Sushilkumar A. Jadhav and
• Dominique Scalarone

Beilstein J. Nanotechnol. 2016, 7, 1454–1460, doi:10.3762/bjnano.7.137

• narrow pore size distribution and high porosity have been obtained by a sol–gel reaction of a silicon oxide precursor (TEOS) and using polystyrene-block-poly(ethylene oxide) (PS-b-PEO) copolymers as templates in an acidic environment. PS-b-PEO copolymers with different molecular weight and composition

Manufacturing and investigation of physical properties of polyacrylonitrile nanofibre composites with SiO₂, TiO₂ and Bi₂O₃ nanoparticles

• Tomasz Tański,
• Wiktor Matysiak and
• Barbara Hajduk

Beilstein J. Nanotechnol. 2016, 7, 1141–1155, doi:10.3762/bjnano.7.106

• diameters in the range from 80 to 200 nm belonged to the bismuth oxide powder (Figure 3). For titanium oxide the obtained particle diameters ranged from 18 to 50 nm. The lowest measured diameter values were registered for silicon oxide nanoparticles, the particle sizes of which were in the range from 8 to

• obtained composite mats, reinforced with silicon oxide, are a promising starting material that can be used to produce carbon anodes, which are used in lithium-ion batteries, after their subsequent treatment by carbonisation and chemical removal of the reinforcing phases in order to increase the porosity of

Fabrication and properties of luminescence polymer composites with erbium/ytterbium oxides and gold nanoparticles

• Julia A. Burunkova,
• Ihor Yu. Denisiuk,
• Dmitri I. Zhuk,
• Lajos Daroczi,
• Attila Csik,
• István Csarnovics and
• Sándor Kokenyesi

Beilstein J. Nanotechnol. 2016, 7, 630–636, doi:10.3762/bjnano.7.55

• mass ratio of 1:2, embedded in silicon oxide powder, the mass of which is twice as high as that of the REO. This corresponds well to the desired composition. No crystalline phases were detected in this powder (see Figure 3), however, it is possible that the sample contains crystals with sizes of 3–4 nm

• nanoparticles should be located around the silicon oxide nanoparticles, which prevents their agglomeration up to 0.15 wt % of content and the plasmon resonance absorbance spectra are observable in the polymer nanocomposite. The measurement with a laser scanning microscope (pump wavelength of 488 nm) has shown

• further developed two routes [9] for the preparation of rare earth oxides (Er and Yb) (REO), using silicon oxide nanoparticles (SiO2 NPs) during the synthesis or not. The process was the following: The mixture of erbium and ytterbium chlorides in proportion 1:2 was dissolved at 100 °C in glycerin (RE